SPICE suite results
Generated by python3 -m pytest hardware/sim. Do not edit.
| Test | Check | Value | Limits | Source | |
|---|---|---|---|---|---|
test_models_match_datasheets | model VGS(th) @250 µA, strong corner | 500 mV | 495 mV … 505 mV | BSS138DW DS DS30203 Rev.16-2 EC table VGS(th) 0.5/0.5/0.5 V | ✅ |
test_models_match_datasheets | model VGS(th) @250 µA, typ corner | 1.2 V | 1.19 V … 1.21 V | BSS138DW DS DS30203 Rev.16-2 EC table VGS(th) 1.2/1.2/1.2 V | ✅ |
test_models_match_datasheets | model VGS(th) @250 µA, weak corner | 1.5 V | 1.48 V … 1.52 V | BSS138DW DS DS30203 Rev.16-2 EC table VGS(th) 1.5/1.5/1.5 V | ✅ |
test_models_match_datasheets | model RDS(ON) @VGS 10 V, 0.22 A, typ | 1.38 Ω | 1.26 Ω … 1.54 Ω | BSS138DW DS DS30203 Rev.16-2 EC table RDS(ON) typ 1.4 Ω | ✅ |
test_models_match_datasheets | model RDS(ON) @VGS 10 V, 0.22 A, weak corner | 3.54 Ω | 3.4 Ω … 3.6 Ω | BSS138DW DS DS30203 Rev.16-2 EC table RDS(ON) max 3.5 Ω | ✅ |
test_models_match_datasheets | model NTC B25/50 | 3.38 kK | 3.36 kK … 3.4 kK | Murata NCP15XH103F03RC DS (08/2021) B25/50 3380 K | ✅ |
test_models_match_datasheets | model NTC R25 | 10 kΩ | 9.99 kΩ … 10 kΩ | Murata NCP15XH103F03RC DS (08/2021) R25 10 kΩ | ✅ |
test_models_match_datasheets | model crss_fig100 | 22 pF | 20.1 pF … 24.5 pF | BSS138DW DS DS30203 Rev.16-2 Fig. 10 Crss at VDS = 0 (digitised 22.3 pF) | ✅ |
test_models_match_datasheets | model crss_fig1010 | 3.55 pF | 2.8 pF … 3.79 pF | BSS138DW DS DS30203 Rev.16-2 Fig. 10 Crss at VDS = 10 V (digitised 3.3 pF) | ✅ |
test_models_match_datasheets | model ciss_fig1010 | 28.5 pF | 28.1 pF … 38 pF | BSS138DW DS DS30203 Rev.16-2 Fig. 10 Ciss at VDS = 10 V (digitised 33 pF) | ✅ |
test_models_match_datasheets | model crss_ecmax10 | 8 pF | 7.6 pF … 8.4 pF | BSS138DW DS DS30203 Rev.16-2 EC table Crss max 8 pF at VDS = 10 V | ✅ |
test_models_match_datasheets | model ciss_ecmax10 | 50 pF | 47.5 pF … 52.5 pF | BSS138DW DS DS30203 Rev.16-2 EC table Ciss max 50 pF at VDS = 10 V | ✅ |
test_link_carries_btn_n_on_the_same_pin | BTN_N: Q1B drain -> base J3.12 -> main J1.12 -> nRF P1.10 (1 = connected) | 1 | 1 … 1 | SPEC §2 link pinout (pin 12 BTN_N, both boards), SPEC §4 pin map (P1.10 BTN_N), SPEC §3 Q2 -> BTN_N | ✅ |
test_jeita_nominal_mapping[COLD00] | COLD00 trip, typ IC + nominal RT1 | 620 m°C | -1.2 °C … 1.2 °C | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT1_Entry 'Approx. 0 °C'; band = ±1.20 °C from VT1_Entry min/max at 38 µA | ✅ |
test_jeita_nominal_mapping[COOL] | COOL trip, typ IC + nominal RT1 | 10.4 °C | 8.66 °C … 11.3 °C | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT5_Entry 'Approx. 10 °C'; band = ±1.34 °C from VT5_Entry min/max at 38 µA | ✅ |
test_jeita_nominal_mapping[WARM] | WARM trip, typ IC + nominal RT1 | 45.3 °C | 43 °C … 47 °C | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT6_Entry 'Approx. 45 °C'; band = ±2.01 °C from VT6_Entry min/max at 38 µA | ✅ |
test_jeita_nominal_mapping[HOT00] | HOT00 trip, typ IC + nominal RT1 | 59.9 °C | 57 °C … 63 °C | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT7_Entry 'Approx. 60 °C'; band = ±2.96 °C from VT7_Entry min/max at 38 µA | ✅ |
test_jeita_charge_prohibit_worst_case[0x00] | TS_CONTROL 0x00: coldest COLD trip (VT1_Entry max; ITS min, R25 -1%, B -1%, IDSS 0.5 µA) | -2.22 °C | 0.0°C … – | JEITA charge-prohibit limits 0 °C / 60 °C as adopted in docs/architecture.md §8.5 and firmware.md §13.1; BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 thresholds + ITS_BIAS; Murata NCP15XH103F03RC DS (08/2021) R25/B ±1 %; BSS138DW DS DS30203 Rev.16-2 IDSS; TS_CONTROL POR default 0x00 (OLD firmware: no write) | ❌ |
test_jeita_charge_prohibit_worst_case[0x00] | TS_CONTROL 0x00: hottest HOT trip (VT7_Entry min; ITS max, R25 +1%, B -1%, IDSS 0.0 µA) | 64.9 °C | – … 60 °C | JEITA charge-prohibit limits 0 °C / 60 °C as adopted in docs/architecture.md §8.5 and firmware.md §13.1; BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 thresholds + ITS_BIAS; Murata NCP15XH103F03RC DS (08/2021) R25/B ±1 %; BSS138DW DS DS30203 Rev.16-2 IDSS; TS_CONTROL POR default 0x00 (OLD firmware: no write) | ❌ |
test_jeita_charge_prohibit_worst_case[0x90] | TS_CONTROL 0x90: coldest COLD trip (VT2_Entry max; ITS min, R25 -1%, B -1%, IDSS 0.5 µA) | 703 m°C | 0.0°C … – | JEITA charge-prohibit limits 0 °C / 60 °C as adopted in docs/architecture.md §8.5 and firmware.md §13.1; BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 thresholds + ITS_BIAS; Murata NCP15XH103F03RC DS (08/2021) R25/B ±1 %; BSS138DW DS DS30203 Rev.16-2 IDSS; firmware rule (hardware/sim, charger_ts-1): firmware.md §13.1 row 9 / SPEC §3 TS_CONTROL (0x0B) = 0x90 at init | ✅ |
test_jeita_charge_prohibit_worst_case[0x90] | TS_CONTROL 0x90: hottest HOT trip (VT9_Entry min; ITS max, R25 +1%, B -1%, IDSS 0.0 µA) | 53.9 °C | – … 60 °C | JEITA charge-prohibit limits 0 °C / 60 °C as adopted in docs/architecture.md §8.5 and firmware.md §13.1; BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 thresholds + ITS_BIAS; Murata NCP15XH103F03RC DS (08/2021) R25/B ±1 %; BSS138DW DS DS30203 Rev.16-2 IDSS; firmware rule (hardware/sim, charger_ts-1): firmware.md §13.1 row 9 / SPEC §3 TS_CONTROL (0x0B) = 0x90 at init | ✅ |
test_jeita_zone_order_all_corners[0x00] | TS_CONTROL 0x00: COOL trip minus COLD trip, worst corner | 7.32 °C | 0.0°C … – | BQ25180 DS SLUSE99C (rev. Jan 2023) §8.3.13.1 JEITA zones (VCOLD > VCOOL), Table 7.5 | ✅ |
test_jeita_zone_order_all_corners[0x00] | TS_CONTROL 0x00: HOT trip minus WARM trip, worst corner | 9.77 °C | 0.0°C … – | BQ25180 DS SLUSE99C (rev. Jan 2023) §8.3.13.1 JEITA zones (VWARM > VHOT), Table 7.5 | ✅ |
test_jeita_zone_order_all_corners[0x90] | TS_CONTROL 0x90: COOL trip minus COLD trip, worst corner | 4.4 °C | 0.0°C … – | BQ25180 DS SLUSE99C (rev. Jan 2023) §8.3.13.1 JEITA zones (VCOLD > VCOOL), Table 7.5 | ✅ |
test_jeita_zone_order_all_corners[0x90] | TS_CONTROL 0x90: HOT trip minus WARM trip, worst corner | 958 m°C | 0.0°C … – | BQ25180 DS SLUSE99C (rev. Jan 2023) §8.3.13.1 JEITA zones (VWARM > VHOT), Table 7.5 | ✅ |
test_ts_stays_below_enz_at_minus_10c | V(TS/MR) at -10 °C, worst corner (ITS max, R25 +1%, B +1%, IDSS 0.0 µA) | 1.72 V | – … 1.8 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTS_ENZ min 1.8 V | ✅ |
test_ts_stays_below_enz_at_minus_10c | warmest temperature at which any corner reaches VTS_ENZ min (informational) | -11 °C | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTS_ENZ; behaviour above it is not specified | ✅ |
test_board_ntc_alone_gives_normal_zone_at_25c | V(TS/MR) at 25 °C, lowest corner | 356 mV | 235 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT6_Exit max 0.235 V (warm exit) | ✅ |
test_board_ntc_alone_gives_normal_zone_at_25c | V(TS/MR) at 25 °C, highest corner | 399 mV | – … 635 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT5_Entry min 0.635 V (cool entry) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb4.5] | V(TS/MR) pressed, usb4.5, worst of 36x3 (mode=usb4.5, vbat=3, fet=weak, its=max, R3x1.010 R4x0.990, T=60 °C) | 356 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (button press detect) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb4.5] | V(TS/MR) pressed, usb4.5: a press also sits below VT7_Entry min 0.105 V, i.e. the TS comparators read HOT for the whole press (informational; firmware must ignore TS status while BTN_N is low) | 356 µV | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT7_Entry; §8.3.13.1 (charging suspended while the button is pressed) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb4.5] | Q1 VGS pressed, usb4.5, max | 4.16 V | – … 20 V | BSS138DW DS DS30203 Rev.16-2 max ratings VGSS ±20 V | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb4.5] | SW1 current pressed, usb4.5, max | 42 µA | – … 50 mA | XKB TS-1187A-X-X-X drawing rev A0 contact rating 50 mA | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb4.5] | VBAT drain while held, usb4.5, max (informational) | 42 µA | – … – | sheets/base.py note (~42 uA while held, R4 100 kOhm) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.0] | V(TS/MR) pressed, usb5.0, worst of 36x3 (mode=usb5.0, vbat=3, fet=weak, its=max, R3x1.010 R4x0.990, T=60 °C) | 356 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (button press detect) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.0] | V(TS/MR) pressed, usb5.0: a press also sits below VT7_Entry min 0.105 V, i.e. the TS comparators read HOT for the whole press (informational; firmware must ignore TS status while BTN_N is low) | 356 µV | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT7_Entry; §8.3.13.1 (charging suspended while the button is pressed) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.0] | Q1 VGS pressed, usb5.0, max | 4.16 V | – … 20 V | BSS138DW DS DS30203 Rev.16-2 max ratings VGSS ±20 V | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.0] | SW1 current pressed, usb5.0, max | 42 µA | – … 50 mA | XKB TS-1187A-X-X-X drawing rev A0 contact rating 50 mA | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.0] | VBAT drain while held, usb5.0, max (informational) | 42 µA | – … – | sheets/base.py note (~42 uA while held, R4 100 kOhm) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.5] | V(TS/MR) pressed, usb5.5, worst of 36x3 (mode=usb5.5, vbat=3, fet=weak, its=max, R3x1.010 R4x0.990, T=60 °C) | 356 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (button press detect) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.5] | V(TS/MR) pressed, usb5.5: a press also sits below VT7_Entry min 0.105 V, i.e. the TS comparators read HOT for the whole press (informational; firmware must ignore TS status while BTN_N is low) | 356 µV | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT7_Entry; §8.3.13.1 (charging suspended while the button is pressed) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.5] | Q1 VGS pressed, usb5.5, max | 4.16 V | – … 20 V | BSS138DW DS DS30203 Rev.16-2 max ratings VGSS ±20 V | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.5] | SW1 current pressed, usb5.5, max | 42 µA | – … 50 mA | XKB TS-1187A-X-X-X drawing rev A0 contact rating 50 mA | ✅ |
test_press_pulls_tsmr_below_mr_threshold[usb5.5] | VBAT drain while held, usb5.5, max (informational) | 42 µA | – … – | sheets/base.py note (~42 uA while held, R4 100 kOhm) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[bat] | V(TS/MR) pressed, bat, worst of 36x3 (mode=bat, vbat=3, fet=weak, its=max, R3x1.010 R4x0.990, T=60 °C) | 563 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (button press detect) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[bat] | V(TS/MR) pressed, bat: a press also sits below VT7_Entry min 0.105 V, i.e. the TS comparators read HOT for the whole press (informational; firmware must ignore TS status while BTN_N is low) | 563 µV | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT7_Entry; §8.3.13.1 (charging suspended while the button is pressed) | ✅ |
test_press_pulls_tsmr_below_mr_threshold[bat] | Q1 VGS pressed, bat, max | 4.16 V | – … 20 V | BSS138DW DS DS30203 Rev.16-2 max ratings VGSS ±20 V | ✅ |
test_press_pulls_tsmr_below_mr_threshold[bat] | SW1 current pressed, bat, max | 42 µA | – … 50 mA | XKB TS-1187A-X-X-X drawing rev A0 contact rating 50 mA | ✅ |
test_press_pulls_tsmr_below_mr_threshold[bat] | VBAT drain while held, bat, max (informational) | 42 µA | – … – | sheets/base.py note (~42 uA while held, R4 100 kOhm) | ✅ |
test_press_minimum_vbat_for_detection | lowest VBAT with TS/MR < 90 mV pressed (weak FET, -10 °C) | 1.56 V | – … 3 V | firmware.md §13.1 CHARGECTRL1 BUVLO 3.0 V (lowest VBAT the system runs at); BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_released_tsmr_never_reads_as_press[usb4.5] | V(TS/MR) released, usb4.5, worst of 48x3 (mode=usb4.5, vbat=4.2, fet=strong, its=min, dr=-0.01, db=+0.01, R3x0.990 R4x1.010, T=60 °C) | 105 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (must not detect a press) | ✅ |
test_released_tsmr_never_reads_as_press[usb4.5] | Q1 gate released (SW1 at 100 MΩ insulation), usb4.5, worst vs VGS(th) min at T (mode=usb4.5, vbat=4.2, fet=strong, its=min, dr=-0.01, db=-0.01, R3x0.990 R4x1.010, T=60 °C) | 4.23 mV | – … 378 mV | BSS138DW DS DS30203 Rev.16-2 VGS(th) min 0.5 V at 25 °C, Fig. 4 tempco -3.5 mV/°C; XKB TS-1187A-X-X-X drawing rev A0 insulation 100 MΩ min | ✅ |
test_released_tsmr_never_reads_as_press[usb5.0] | V(TS/MR) released, usb5.0, worst of 48x3 (mode=usb5.0, vbat=4.2, fet=strong, its=min, dr=-0.01, db=+0.01, R3x0.990 R4x1.010, T=60 °C) | 105 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (must not detect a press) | ✅ |
test_released_tsmr_never_reads_as_press[usb5.0] | Q1 gate released (SW1 at 100 MΩ insulation), usb5.0, worst vs VGS(th) min at T (mode=usb5.0, vbat=4.2, fet=strong, its=min, dr=-0.01, db=-0.01, R3x0.990 R4x1.010, T=60 °C) | 4.23 mV | – … 378 mV | BSS138DW DS DS30203 Rev.16-2 VGS(th) min 0.5 V at 25 °C, Fig. 4 tempco -3.5 mV/°C; XKB TS-1187A-X-X-X drawing rev A0 insulation 100 MΩ min | ✅ |
test_released_tsmr_never_reads_as_press[usb5.5] | V(TS/MR) released, usb5.5, worst of 48x3 (mode=usb5.5, vbat=4.2, fet=strong, its=min, dr=-0.01, db=+0.01, R3x0.990 R4x1.010, T=60 °C) | 105 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (must not detect a press) | ✅ |
test_released_tsmr_never_reads_as_press[usb5.5] | Q1 gate released (SW1 at 100 MΩ insulation), usb5.5, worst vs VGS(th) min at T (mode=usb5.5, vbat=4.2, fet=strong, its=min, dr=-0.01, db=-0.01, R3x0.990 R4x1.010, T=60 °C) | 4.23 mV | – … 378 mV | BSS138DW DS DS30203 Rev.16-2 VGS(th) min 0.5 V at 25 °C, Fig. 4 tempco -3.5 mV/°C; XKB TS-1187A-X-X-X drawing rev A0 insulation 100 MΩ min | ✅ |
test_released_tsmr_never_reads_as_press[bat] | V(TS/MR) released, bat, worst of 48x3 (mode=bat, vbat=4.2, fet=strong, its=min, dr=-0.01, db=+0.01, R3x0.990 R4x1.010, T=60 °C) | 167 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR 90 mV (must not detect a press) | ✅ |
test_released_tsmr_never_reads_as_press[bat] | Q1 gate released (SW1 at 100 MΩ insulation), bat, worst vs VGS(th) min at T (mode=bat, vbat=4.2, fet=strong, its=min, dr=-0.01, db=-0.01, R3x0.990 R4x1.010, T=60 °C) | 4.23 mV | – … 378 mV | BSS138DW DS DS30203 Rev.16-2 VGS(th) min 0.5 V at 25 °C, Fig. 4 tempco -3.5 mV/°C; XKB TS-1187A-X-X-X drawing rev A0 insulation 100 MΩ min | ✅ |
test_ntc_and_pin_stress | RT1 current, max (mode=bat, vbat=4.2, its=max, dr=-0.01, db=-0.01, T=-10 °C) | 62.4 µA | – … 100 µA | Murata NCP15XH103F03RC DS (08/2021) max operating current 0.1 mA | ✅ |
test_ntc_and_pin_stress | V(TS/MR) = V(RT1), max (mode=bat, vbat=4.2, its=max, dr=+0.01, db=+0.01, T=-10 °C) | 2.72 V | – … 5 V | Murata NCP15XH103F03RC DS (08/2021) max voltage 5 V; BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_btn_n_logic_level_at_nrf[pressed] | BTN_N / VDD pressed, worst (mode=bat, vbat=3, fet=weak, its=max, R56x0.990, T=60 °C) | 91.9 µ×VDD | – … 300 m×VDD | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL max 0.3 VDD | ✅ |
test_btn_n_logic_level_at_nrf[released] | BTN_N / VDD released, worst (mode=bat, vbat=3, fet=strong, its=max, R56x1.010, T=60 °C) | 971 m×VDD | 700 m×VDD … – | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH min 0.7 VDD; BSS138DW DS DS30203 Rev.16-2 IDSS 0.5 µA | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | V(TS/MR) min over press+release (-10 °C, weak FET, VBAT 3.0, C Fig. 10) | 201 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | V(TS/MR) max over press+release (-10 °C, weak FET, VBAT 3.0, C Fig. 10) | 2.25 V | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | BTN_N below VIL after press (-10 °C, weak FET, VBAT 3.0, C Fig. 10) | 138 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | BTN_N above VIH after release (-10 °C, weak FET, VBAT 3.0, C Fig. 10) | 14.9 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | TS/MR back above VTSMR after release (-10 °C, weak FET, VBAT 3.0, C Fig. 10, informational) | 6.78 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | V(TS/MR) min over press+release (-10 °C, strong FET, VBAT 4.2, C EC max) | 29 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | V(TS/MR) max over press+release (-10 °C, strong FET, VBAT 4.2, C EC max) | 1.81 V | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | BTN_N below VIL after press (-10 °C, strong FET, VBAT 4.2, C EC max) | 68.6 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | BTN_N above VIH after release (-10 °C, strong FET, VBAT 4.2, C EC max) | 68.5 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | TS/MR back above VTSMR after release (-10 °C, strong FET, VBAT 4.2, C EC max, informational) | 39.9 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | V(TS/MR) min over press+release (-10 °C, typ FET, VBAT 3.7, C Fig. 10) | 46.5 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | V(TS/MR) max over press+release (-10 °C, typ FET, VBAT 3.7, C Fig. 10) | 2.08 V | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | BTN_N below VIL after press (-10 °C, typ FET, VBAT 3.7, C Fig. 10) | 73.1 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | BTN_N above VIH after release (-10 °C, typ FET, VBAT 3.7, C Fig. 10) | 19.5 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[-10.0] | TS/MR back above VTSMR after release (-10 °C, typ FET, VBAT 3.7, C Fig. 10, informational) | 10.9 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | V(TS/MR) min over press+release (25 °C, weak FET, VBAT 3.0, C Fig. 10) | 235 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | V(TS/MR) max over press+release (25 °C, weak FET, VBAT 3.0, C Fig. 10) | 1.13 V | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | BTN_N below VIL after press (25 °C, weak FET, VBAT 3.0, C Fig. 10) | 114 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | BTN_N above VIH after release (25 °C, weak FET, VBAT 3.0, C Fig. 10) | 14.9 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | TS/MR back above VTSMR after release (25 °C, weak FET, VBAT 3.0, C Fig. 10, informational) | 7.74 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | V(TS/MR) min over press+release (25 °C, strong FET, VBAT 4.2, C EC max) | -1.02 mV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | V(TS/MR) max over press+release (25 °C, strong FET, VBAT 4.2, C EC max) | 677 mV | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | BTN_N below VIL after press (25 °C, strong FET, VBAT 4.2, C EC max) | 55.2 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | BTN_N above VIH after release (25 °C, strong FET, VBAT 4.2, C EC max) | 74.7 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | TS/MR back above VTSMR after release (25 °C, strong FET, VBAT 4.2, C EC max, informational) | 47.3 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | V(TS/MR) min over press+release (25 °C, typ FET, VBAT 3.7, C Fig. 10) | 56.9 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | V(TS/MR) max over press+release (25 °C, typ FET, VBAT 3.7, C Fig. 10) | 990 mV | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | BTN_N below VIL after press (25 °C, typ FET, VBAT 3.7, C Fig. 10) | 62 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | BTN_N above VIH after release (25 °C, typ FET, VBAT 3.7, C Fig. 10) | 19.5 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[25.0] | TS/MR back above VTSMR after release (25 °C, typ FET, VBAT 3.7, C Fig. 10, informational) | 12.1 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | V(TS/MR) min over press+release (60 °C, weak FET, VBAT 3.0, C Fig. 10) | 269 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | V(TS/MR) max over press+release (60 °C, weak FET, VBAT 3.0, C Fig. 10) | 731 mV | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | BTN_N below VIL after press (60 °C, weak FET, VBAT 3.0, C Fig. 10) | 102 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | BTN_N above VIH after release (60 °C, weak FET, VBAT 3.0, C Fig. 10) | 15.9 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | TS/MR back above VTSMR after release (60 °C, weak FET, VBAT 3.0, C Fig. 10, informational) | 9.94 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | V(TS/MR) min over press+release (60 °C, strong FET, VBAT 4.2, C EC max) | -1.61 mV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | V(TS/MR) max over press+release (60 °C, strong FET, VBAT 4.2, C EC max) | 369 mV | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | BTN_N below VIL after press (60 °C, strong FET, VBAT 4.2, C EC max) | 47.5 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | BTN_N above VIH after release (60 °C, strong FET, VBAT 4.2, C EC max) | 95.7 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | TS/MR back above VTSMR after release (60 °C, strong FET, VBAT 4.2, C EC max, informational) | 95.9 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | V(TS/MR) min over press+release (60 °C, typ FET, VBAT 3.7, C Fig. 10) | -295 µV | -300 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 -0.3 V | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | V(TS/MR) max over press+release (60 °C, typ FET, VBAT 3.7, C Fig. 10) | 648 mV | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | BTN_N below VIL after press (60 °C, typ FET, VBAT 3.7, C Fig. 10) | 54.7 ns | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIL 0.3 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | BTN_N above VIH after release (60 °C, typ FET, VBAT 3.7, C Fig. 10) | 20.9 µs | – … 5 ms | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH 0.7 VDD; firmware.md gpio-keys debounce-interval-ms 5 | ✅ |
test_press_release_edges_pin_and_btn_n[60.0] | TS/MR back above VTSMR after release (60 °C, typ FET, VBAT 3.7, C Fig. 10, informational) | 16.1 µs | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR | ✅ |
test_press_release_false_temperature_tail[-10.0] | press edge: time TS/MR reads a false temperature (-10 °C, weak FET, VBAT 3.0, C Fig. 10) | 104 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[-10.0] | release edge: time TS/MR reads a false temperature (-10 °C, weak FET, VBAT 3.0, C Fig. 10) | 9.3 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[-10.0] | press edge: time TS/MR reads a false temperature (-10 °C, strong FET, VBAT 4.2, C EC max) | 52 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[-10.0] | release edge: time TS/MR reads a false temperature (-10 °C, strong FET, VBAT 4.2, C EC max) | 34.8 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[-10.0] | press edge: time TS/MR reads a false temperature (-10 °C, typ FET, VBAT 3.7, C Fig. 10) | 55.9 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[-10.0] | release edge: time TS/MR reads a false temperature (-10 °C, typ FET, VBAT 3.7, C Fig. 10) | 9.2 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[25.0] | press edge: time TS/MR reads a false temperature (25 °C, weak FET, VBAT 3.0, C Fig. 10) | 80.7 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[25.0] | release edge: time TS/MR reads a false temperature (25 °C, weak FET, VBAT 3.0, C Fig. 10) | 5.6 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[25.0] | press edge: time TS/MR reads a false temperature (25 °C, strong FET, VBAT 4.2, C EC max) | 34.8 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[25.0] | release edge: time TS/MR reads a false temperature (25 °C, strong FET, VBAT 4.2, C EC max) | 35.4 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[25.0] | press edge: time TS/MR reads a false temperature (25 °C, typ FET, VBAT 3.7, C Fig. 10) | 44.6 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[25.0] | release edge: time TS/MR reads a false temperature (25 °C, typ FET, VBAT 3.7, C Fig. 10) | 6 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[60.0] | press edge: time TS/MR reads a false temperature (60 °C, weak FET, VBAT 3.0, C Fig. 10) | 66.8 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[60.0] | release edge: time TS/MR reads a false temperature (60 °C, weak FET, VBAT 3.0, C Fig. 10) | 3.6 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[60.0] | press edge: time TS/MR reads a false temperature (60 °C, strong FET, VBAT 4.2, C EC max) | 26.6 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[60.0] | release edge: time TS/MR reads a false temperature (60 °C, strong FET, VBAT 4.2, C EC max) | 17 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[60.0] | press edge: time TS/MR reads a false temperature (60 °C, typ FET, VBAT 3.7, C Fig. 10) | 37.5 ns | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_press_release_false_temperature_tail[60.0] | release edge: time TS/MR reads a false temperature (60 °C, typ FET, VBAT 3.7, C Fig. 10) | 3.4 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023): no TS deglitch specified. Limit = Table 7.6 tTS_DUTY_ON 4 ms (TS/MR evaluation window) and firmware.md gpio-keys debounce 5 ms (TS status blanking after release). For information, Table 7.6 tSLEEP_DGL (a VIN deglitch, not a TS one) is 64 µs | ✅ |
test_battery_only_pulsed_bias[-10.0] | ON windows during the press: max V(TS/MR) (-10 °C, weak FET, VBAT 3.0) | 417 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only), Table 7.6 tTS_DUTY_ON/OFF | ✅ |
test_battery_only_pulsed_bias[-10.0] | ON windows outside the press: min V(TS/MR) (-10 °C, weak FET, VBAT 3.0) | 2.63 V | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only) | ✅ |
test_battery_only_pulsed_bias[-10.0] | TS/MR settling inside an ON window (-10 °C, weak FET, VBAT 3.0) | 6.56 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.6 tTS_DUTY_ON 4 ms | ✅ |
test_battery_only_pulsed_bias[-10.0] | ON windows during the press: max V(TS/MR) (-10 °C, strong FET, VBAT 4.2) | 88.9 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only), Table 7.6 tTS_DUTY_ON/OFF | ✅ |
test_battery_only_pulsed_bias[-10.0] | ON windows outside the press: min V(TS/MR) (-10 °C, strong FET, VBAT 4.2) | 2.37 V | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only) | ✅ |
test_battery_only_pulsed_bias[-10.0] | TS/MR settling inside an ON window (-10 °C, strong FET, VBAT 4.2) | 14.9 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.6 tTS_DUTY_ON 4 ms | ✅ |
test_battery_only_pulsed_bias[60.0] | ON windows during the press: max V(TS/MR) (60 °C, weak FET, VBAT 3.0) | 562 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only), Table 7.6 tTS_DUTY_ON/OFF | ✅ |
test_battery_only_pulsed_bias[60.0] | ON windows outside the press: min V(TS/MR) (60 °C, weak FET, VBAT 3.0) | 187 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only) | ✅ |
test_battery_only_pulsed_bias[60.0] | TS/MR settling inside an ON window (60 °C, weak FET, VBAT 3.0) | 1.3 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.6 tTS_DUTY_ON 4 ms | ✅ |
test_battery_only_pulsed_bias[60.0] | ON windows during the press: max V(TS/MR) (60 °C, strong FET, VBAT 4.2) | 130 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only), Table 7.6 tTS_DUTY_ON/OFF | ✅ |
test_battery_only_pulsed_bias[60.0] | ON windows outside the press: min V(TS/MR) (60 °C, strong FET, VBAT 4.2) | 167 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (battery only) | ✅ |
test_battery_only_pulsed_bias[60.0] | TS/MR settling inside an ON window (60 °C, strong FET, VBAT 4.2) | 5.98 µs | – … 4 ms | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.6 tTS_DUTY_ON 4 ms | ✅ |
test_fault_rt1_not_fitted_is_detected | faulted (RT1 off): V(TS/MR) at 25 °C leaves the normal zone | 2.79 V | 635 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT5_Entry min (the window check must fail) | ✅ |
test_fault_rt1_not_fitted_is_detected | faulted (RT1 off): V(TS/MR) inside the pin rating | 2.79 V | – … 5.5 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.1 5.5 V | ✅ |
test_open_ntc_keeps_ts_monitoring_enabled | RT1 open: V(TS/MR) with VTS_CLAMP at its min vs VTS_ENZ min | 2.19 V | – … 1.8 V | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTS_ENZ min 1.8 V ('VTSMR < VTS_ENZ for TS function to be enabled'), VTS_CLAMP 2.2 V min | ❌ |
test_open_ntc_keeps_ts_monitoring_enabled_with_fw_rule | RT1 open: current the CHG_TSMR net sinks from the TS bias, max (mode=usb4.5, vbat=4.2, fet=strong, its=min, T=60 °C, VTS_CLAMP max) vs ITS min: below it the pin rides on the clamp, so TS_OPEN_STAT = 1 (fw rule charger_ts-v1) | 855 nA | – … 36.5 µA | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 ITS_BIAS min 36.5 µA; BSS138DW DS DS30203 Rev.16-2 IDSS 0.5 µA max; BQ25180 DS SLUSE99C (rev. Jan 2023) §8.3.13.1: 'The bit TS_OPEN_STAT is set when this clamp is active' (regardless of TS_EN); firmware rule (hardware/sim, charger_ts-v1): firmware.md §13.1 'TS open' / §13.2, SPEC §3: TS_OPEN_STAT = 1 -> ICHG_CTRL.CHG_DIS = 1 and 'temperature sensor fault' | ✅ |
test_open_ntc_keeps_ts_monitoring_enabled_with_fw_rule | RT1 open: lowest V(TS/MR) (mode=usb4.5, vbat=4.2, fet=strong, its=min, T=60 °C, VTS_CLAMP min = 2.2 V; informational: the pin sits on the clamp) | 2.19 V | – … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTS_CLAMP 2.2-3.3 V | ✅ |
test_fault_rt1_shorted_is_detected | faulted (RT1 shorted): V(TS/MR) released at 25 °C | 0.0V | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (the released check must fail) | ✅ |
test_fault_r3_r4_values_swapped_is_detected | faulted (R3/R4 swapped): V(TS/MR) pressed at 25 °C | 375 mV | 90 mV … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (the press check must fail) | ✅ |
test_fault_r4_not_fitted_is_detected | faulted (R4 off): V(TS/MR) released at 25 °C | 224 µV | – … 90 mV | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VTSMR (the released check must fail) | ✅ |
test_fault_r4_not_fitted_is_detected | faulted (R4 off): BTN_N / VDD released at 25 °C | 62 µ×VDD | – … 700 m×VDD | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH (the released check must fail) | ✅ |
test_fault_r56_not_fitted_is_detected | faulted (R56 off): BTN_N / VDD released at 25 °C | 5.59 p×VDD | – … 700 m×VDD | nRF52840 PS v1.6 §6.9.3.1 GPIO VIH min 0.7 VDD (the released check must fail) | ✅ |
test_fault_rt1_wrong_beta_is_detected | faulted (RT1 B3950): COLD trip offset from 'Approx. 0 °C' beyond the IC spread | 2.57 °C | 0.0°C … – | BQ25180 DS SLUSE99C (rev. Jan 2023) Table 7.5 VT1_Entry (mapping check must fail) | ✅ |
test_rc_step_matches_closed_form | v(out) at t = RC | 632 mV | 630 mV … 634 mV | closed form | ✅ |
test_netlist_topology | VSYS max (SYS_OVP rising, SYS_REG +2 %) vs U1 VIN range | 4.82 V | – … 5.5 V | RT9080 DS9080-09 section 12 VIN 1.2-5.5 V; BQ25180 SLUSE99C 8.3.6 SYS_OVP ~105 % of target, 7.5 VSYS_REG +/-2 % | ✅ |
test_model_matches_datasheet_figures | DS load step 1 mA->600 mA undershoot (model >= DS Fig.) | 66.4 mV | 27 mV … 81 mV | RT9080 DS9080-09 Fig. Load Transient ~27 mV (fit: model may be up to 3x pessimistic) | ✅ |
test_model_matches_datasheet_figures | DS load step 600 mA->1 mA overshoot (model >= DS Fig.) | 23.6 mV | 20.7 mV … 69 mV | RT9080 DS9080-09 Fig. Load Transient ~23 mV | ✅ |
test_model_matches_datasheet_figures | DS load regulation 1->600 mA, % of VOUT | 470 m% | 0% … 1 % | RT9080 DS9080-09 Table 14 load regulation 0.5 typ / 1 % max | ✅ |
test_model_matches_datasheet_figures | DS bench settles (no sustained ringing) | 0.0V | 0V … 1 mV | RT9080 DS9080-09 section 17.1: stable with >=1 uF | ✅ |
test_model_matches_datasheet_figures | DS PSRR @ 1 kHz | 74.3 dB | 72 dB … 78 dB | RT9080 DS9080-09 Table 14 PSRR 75 dB typ (fit +/-3 dB) | ✅ |
test_model_matches_datasheet_figures | DS dropout @600 mA, 25 C (typ) | 316 mV | 280 mV … 340 mV | RT9080 DS9080-09 Table 14 VDROP 0.31 typ / 0.53 V max (3 V <= VOUT) | ✅ |
test_model_matches_datasheet_figures | DS dropout @600 mA, 25 C (max corner) | 504 mV | 450 mV … 530 mV | RT9080 DS9080-09 Table 14 VDROP 0.31 typ / 0.53 V max (3 V <= VOUT) | ✅ |
test_model_matches_datasheet_figures | DS soft start, EN -> 92 % VOUT | 180 µs | 97.5 µs … 390 µs | RT9080 DS9080-09 Fig. Power On from EN (~195 us to 92 %, read from the plot) | ✅ |
test_spec_section3_ldo_requirements | dropout @200 mA, DS max part, 60 C | 206 mV | – … 300 mV | SPEC.md 3: dropout <= 300 mV at 200 mA | ✅ |
test_spec_section3_ldo_requirements | current limit, DS min | 610 mA | 200 mA … – | SPEC.md 3: >= 200 mA (RT9080 DS9080-09 Table 14 ILIM >= 610 mA) | ✅ |
test_spec_section3_ldo_requirements | output capacitance at U1, nominal (C3+C4) | 10.1 µF | 10.1 µF … – | SPEC.md 3: output 10 uF + 100 nF | ✅ |
test_spec_section3_ldo_requirements | VSYS capacitance on U1's sheet (C1+C2+C6), effective at 4.59 V, -tol | 16.7 µF | 1 µF … – | RT9080 DS9080-09 section 18: input capacitor >= 1 uF close to VIN (SPEC 3: 10 uF) | ✅ |
test_nominal_regulation | +3V3 at VBAT 3.7 V, 25 C, TX load | 3.3 V | 3.23 V … 3.37 V | RT9080 DS9080-09 Table 14 accuracy +/-2 % | ✅ |
test_nominal_regulation | LDO input current = load + GND current | 18.2 mA | 18.1 mA … 18.5 mA | RT9080 DS9080-09 Fig. Ground Current vs Load Current (~150 uA at 18 mA) | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.0 V, -10 C, peak load 55.8 mA | 2.94 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.0 V, -10 C, sleep load | 3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.1 V, -10 C, peak load 55.8 mA | 3.05 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.1 V, -10 C, sleep load | 3.1 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.2 V, -10 C, peak load 55.8 mA | 3.15 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.2 V, -10 C, sleep load | 3.2 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.3 V, -10 C, peak load 55.8 mA | 3.2 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.3 V, -10 C, sleep load | 3.3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.4 V, -10 C, peak load 55.8 mA | 3.2 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.4 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.5 V, -10 C, peak load 55.8 mA | 3.2 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.5 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 3.7 V, -10 C, peak load 55.8 mA | 3.21 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 3.7 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.2 V, -10 C, peak load 55.8 mA | 3.21 V | 2.92 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.2 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.312 V, -10 C, peak load 55.8 mA | 3.21 V | 2.99 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.312 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.4 V, -10 C, peak load 55.8 mA | 3.21 V | 3.04 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.4 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.488 V, -10 C, peak load 55.8 mA | 3.21 V | 3.09 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.488 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.41 V, -10 C, peak load 55.8 mA | 3.21 V | 3.05 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.41 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.5 V, -10 C, peak load 55.8 mA | 3.21 V | 3.1 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.5 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 min @ VSYS 4.59 V, -10 C, peak load 55.8 mA | 3.21 V | 3.15 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[-10] | +3V3 max @ VSYS 4.59 V, -10 C, sleep load | 3.35 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.0 V, 25 C, peak load 55.8 mA | 2.94 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.0 V, 25 C, sleep load | 3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.1 V, 25 C, peak load 55.8 mA | 3.04 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.1 V, 25 C, sleep load | 3.1 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.2 V, 25 C, peak load 55.8 mA | 3.14 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.2 V, 25 C, sleep load | 3.2 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.3 V, 25 C, peak load 55.8 mA | 3.22 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.3 V, 25 C, sleep load | 3.3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.4 V, 25 C, peak load 55.8 mA | 3.22 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.4 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.5 V, 25 C, peak load 55.8 mA | 3.22 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.5 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 3.7 V, 25 C, peak load 55.8 mA | 3.23 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 3.7 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.2 V, 25 C, peak load 55.8 mA | 3.23 V | 2.92 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.2 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.312 V, 25 C, peak load 55.8 mA | 3.23 V | 2.99 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.312 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.4 V, 25 C, peak load 55.8 mA | 3.23 V | 3.04 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.4 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.488 V, 25 C, peak load 55.8 mA | 3.23 V | 3.09 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.488 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.41 V, 25 C, peak load 55.8 mA | 3.23 V | 3.05 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.41 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.5 V, 25 C, peak load 55.8 mA | 3.23 V | 3.1 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.5 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 min @ VSYS 4.59 V, 25 C, peak load 55.8 mA | 3.23 V | 3.15 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[25] | +3V3 max @ VSYS 4.59 V, 25 C, sleep load | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.0 V, 60 C, peak load 55.8 mA | 2.93 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.0 V, 60 C, sleep load | 3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.1 V, 60 C, peak load 55.8 mA | 3.03 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.1 V, 60 C, sleep load | 3.1 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.2 V, 60 C, peak load 55.8 mA | 3.14 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.2 V, 60 C, sleep load | 3.2 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.3 V, 60 C, peak load 55.8 mA | 3.23 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.3 V, 60 C, sleep load | 3.3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.4 V, 60 C, peak load 55.8 mA | 3.23 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.4 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.5 V, 60 C, peak load 55.8 mA | 3.23 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.5 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 3.7 V, 60 C, peak load 55.8 mA | 3.23 V | 2.7 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 3.7 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.2 V, 60 C, peak load 55.8 mA | 3.24 V | 2.92 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.2 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.312 V, 60 C, peak load 55.8 mA | 3.24 V | 2.99 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.312 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.4 V, 60 C, peak load 55.8 mA | 3.24 V | 3.04 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.4 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.488 V, 60 C, peak load 55.8 mA | 3.24 V | 3.09 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.488 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.41 V, 60 C, peak load 55.8 mA | 3.24 V | 3.05 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.41 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.5 V, 60 C, peak load 55.8 mA | 3.24 V | 3.1 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.5 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 min @ VSYS 4.59 V, 60 C, peak load 55.8 mA | 3.24 V | 3.15 V … – | W25Q128JV Rev F 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD (PCN) + nRF52840 PS VOH = VDD-0.4 V | ✅ |
test_dc_supply_and_temperature_corners[60] | +3V3 max @ VSYS 4.59 V, 60 C, sleep load | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec); nRF/W25Q/TMAG/LIS2DW12 <= 3.6 V | ✅ |
test_startup_vsys_ramp[1e-05-4.2-battery hot-plug] | [battery hot-plug] tR_VDD (0 -> 1.7 V), DS min ILIM, max C | 141 µs | 0s … 60 ms | nRF52840 PS recommended operating conditions tR_VDD <= 60 ms | ✅ |
test_startup_vsys_ramp[1e-05-4.2-battery hot-plug] | [battery hot-plug] +3V3 peak during start-up | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[1e-05-4.2-battery hot-plug] | [battery hot-plug] +3V3 after start-up | 3.2 V | 2.7 V … – | W25Q128JV 9.2 >= 2.7 V | ✅ |
test_startup_vsys_ramp[1e-05-4.2-battery hot-plug] | [battery hot-plug] +3V3 after start-up (max) | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[1e-05-4.2-battery hot-plug] | [battery hot-plug] LDO input current peak (current-limit controlled, typ ILIM, C(V) at +tol) | 947 mA | – … 1 A | BQ25180 SLUSE99C IBAT_OCP 1 A (POR value, before firmware sets 1.5 A); RT9080 DS9080-09 Table 14 gives ILIM >= 0.61 A and no max | ✅ |
test_startup_vsys_ramp[1e-05-4.2-battery hot-plug] | [battery hot-plug] +3V3 ramp rate 10-90 %, DS min ILIM, max C | 15.4 kV/s | 3 kV/s … – | TMAG5273 SLYS045C VCC ramp >= 3 V/ms | ✅ |
test_startup_vsys_ramp[1e-05-4.59-USB, fast SYS] | [USB, fast SYS] tR_VDD (0 -> 1.7 V), DS min ILIM, max C | 141 µs | 0s … 60 ms | nRF52840 PS recommended operating conditions tR_VDD <= 60 ms | ✅ |
test_startup_vsys_ramp[1e-05-4.59-USB, fast SYS] | [USB, fast SYS] +3V3 peak during start-up | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[1e-05-4.59-USB, fast SYS] | [USB, fast SYS] +3V3 after start-up | 3.2 V | 2.7 V … – | W25Q128JV 9.2 >= 2.7 V | ✅ |
test_startup_vsys_ramp[1e-05-4.59-USB, fast SYS] | [USB, fast SYS] +3V3 after start-up (max) | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[1e-05-4.59-USB, fast SYS] | [USB, fast SYS] LDO input current peak (current-limit controlled, typ ILIM, C(V) at +tol) | 948 mA | – … 1 A | BQ25180 SLUSE99C IBAT_OCP 1 A (POR value, before firmware sets 1.5 A); RT9080 DS9080-09 Table 14 gives ILIM >= 0.61 A and no max | ✅ |
test_startup_vsys_ramp[1e-05-4.59-USB, fast SYS] | [USB, fast SYS] +3V3 ramp rate 10-90 %, DS min ILIM, max C | 15.4 kV/s | 3 kV/s … – | TMAG5273 SLYS045C VCC ramp >= 3 V/ms | ✅ |
test_startup_vsys_ramp[0.001-4.59-USB, 1 ms SYS ramp] | [USB, 1 ms SYS ramp] tR_VDD (0 -> 1.7 V), DS min ILIM, max C | 478 µs | 0s … 60 ms | nRF52840 PS recommended operating conditions tR_VDD <= 60 ms | ✅ |
test_startup_vsys_ramp[0.001-4.59-USB, 1 ms SYS ramp] | [USB, 1 ms SYS ramp] +3V3 peak during start-up | 3.41 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[0.001-4.59-USB, 1 ms SYS ramp] | [USB, 1 ms SYS ramp] +3V3 after start-up | 3.2 V | 2.7 V … – | W25Q128JV 9.2 >= 2.7 V | ✅ |
test_startup_vsys_ramp[0.001-4.59-USB, 1 ms SYS ramp] | [USB, 1 ms SYS ramp] +3V3 after start-up (max) | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[0.001-4.59-USB, 1 ms SYS ramp] | [USB, 1 ms SYS ramp] LDO input current peak (current-limit controlled, typ ILIM, C(V) at +tol) | 436 mA | – … 1 A | BQ25180 SLUSE99C IBAT_OCP 1 A (POR value, before firmware sets 1.5 A); RT9080 DS9080-09 Table 14 gives ILIM >= 0.61 A and no max | ✅ |
test_startup_vsys_ramp[0.001-4.59-USB, 1 ms SYS ramp] | [USB, 1 ms SYS ramp] +3V3 ramp rate 10-90 %, DS min ILIM, max C | 7.28 kV/s | 3 kV/s … – | TMAG5273 SLYS045C VCC ramp >= 3 V/ms | ✅ |
test_startup_vsys_ramp[0.02-3.0-slow ramp to BUVLO] | [slow ramp to BUVLO] tR_VDD (0 -> 1.7 V), DS min ILIM, max C | 11.9 ms | 0s … 60 ms | nRF52840 PS recommended operating conditions tR_VDD <= 60 ms | ✅ |
test_startup_vsys_ramp[0.02-3.0-slow ramp to BUVLO] | [slow ramp to BUVLO] +3V3 peak during start-up | 2.96 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[0.02-3.0-slow ramp to BUVLO] | [slow ramp to BUVLO] +3V3 after start-up | 2.95 V | 2.7 V … – | W25Q128JV 9.2 >= 2.7 V | ✅ |
test_startup_vsys_ramp[0.02-3.0-slow ramp to BUVLO] | [slow ramp to BUVLO] +3V3 after start-up (max) | 2.97 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_startup_vsys_ramp[0.02-3.0-slow ramp to BUVLO] | [slow ramp to BUVLO] LDO input current peak (current-limit controlled, typ ILIM, C(V) at +tol) | 136 mA | – … 1 A | BQ25180 SLUSE99C IBAT_OCP 1 A (POR value, before firmware sets 1.5 A); RT9080 DS9080-09 Table 14 gives ILIM >= 0.61 A and no max | ✅ |
test_load_steps[-10-3.0] | +3V3 min during TX / flash steps, VSYS 3.0 V, -10 C | 2.94 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps[-10-3.0] | +3V3 max after peak -> sleep release, VSYS 3.0 V, -10 C | 3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps[-10-3.7] | +3V3 min during TX / flash steps, VSYS 3.7 V, -10 C | 3.2 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps[-10-3.7] | +3V3 max after peak -> sleep release, VSYS 3.7 V, -10 C | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps[-10-4.59] | +3V3 min during TX / flash steps, VSYS 4.59 V, -10 C | 3.2 V | 3.15 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps[-10-4.59] | +3V3 max after peak -> sleep release, VSYS 4.59 V, -10 C | 3.36 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps[60-3.0] | +3V3 min during TX / flash steps, VSYS 3.0 V, 60 C | 2.93 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps[60-3.0] | +3V3 max after peak -> sleep release, VSYS 3.0 V, 60 C | 3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps[60-3.7] | +3V3 min during TX / flash steps, VSYS 3.7 V, 60 C | 3.22 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps[60-3.7] | +3V3 max after peak -> sleep release, VSYS 3.7 V, 60 C | 3.4 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps[60-4.59] | +3V3 min during TX / flash steps, VSYS 4.59 V, 60 C | 3.23 V | 3.15 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps[60-4.59] | +3V3 max after peak -> sleep release, VSYS 4.59 V, 60 C | 3.39 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps_slow_loop_sensitivity | +3V3 min, loop 3x slower, BUVLO, 60 C | 2.93 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps_slow_loop_sensitivity | +3V3 max, loop 3x slower, BUVLO, 60 C | 3 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_load_steps_slow_loop_sensitivity | +3V3 min, loop 3x slower, USB max, -10 C | 3.19 V | 3.15 V … – | W25Q128JV 9.2 VCC >= 2.7 V; WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ✅ |
test_load_steps_slow_loop_sensitivity | +3V3 max, loop 3x slower, USB max, -10 C | 3.37 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_line_transients[led sag 3.7] | [led sag 3.7] +3V3 min | 3.2 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ✅ |
test_line_transients[led sag 3.7] | [led sag 3.7] +3V3 max | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_line_transients[led sag 3.4] | [led sag 3.4] +3V3 min | 3.03 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ✅ |
test_line_transients[led sag 3.4] | [led sag 3.4] +3V3 max | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_line_transients[usb plug fast] | [usb plug fast] +3V3 min | 2.93 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ✅ |
test_line_transients[usb plug fast] | [usb plug fast] +3V3 max | 3.45 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_line_transients[usb plug ilim] | [usb plug ilim] +3V3 min (ILIM-limited 14.9 V/ms into 33.4 uF) | 2.93 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ✅ |
test_line_transients[usb plug ilim] | [usb plug ilim] +3V3 max (ILIM-limited 14.9 V/ms into 33.4 uF) | 3.42 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_line_transients[usb unplug] | [usb unplug] +3V3 min | 2.93 V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ✅ |
test_line_transients[usb unplug] | [usb unplug] +3V3 max | 3.38 V | – … 3.5 V | SSD1351 VCI <= 3.5 V (NHD spec) | ✅ |
test_output_capacitor_stability | COUT effective at U1 (C3+C4), worst corner | 3.69 µF | 1 µF … – | RT9080 DS9080-09 17.1 / Fig. 1: >= 1 uF effective incl. voltage and temperature coefficient (section 8: 0.7 uF) | ✅ |
test_output_capacitor_stability | COUT effective on +3V3 (16 caps), MC min | 16.6 µF | 1 µF … – | RT9080 DS9080-09 Fig. 1 typical application: COUT effective capacitance >= 1 uF | ✅ |
test_output_capacitor_stability | C3 (CL10A106KP8NNNC) ESR min over 10 kHz-1 MHz | 3.17 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C4 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C10 (CL10A106KP8NNNC) ESR min over 10 kHz-1 MHz | 3.17 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C11 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C15 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C33 (CL05A105KA5NQNC) ESR min over 10 kHz-1 MHz | 10.6 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C35 (CL21A475KAQNNNE) ESR min over 10 kHz-1 MHz | 4.81 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C36 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C50 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C51 (CL05A105KA5NQNC) ESR min over 10 kHz-1 MHz | 10.6 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C52 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C53 (CL10A106KP8NNNC) ESR min over 10 kHz-1 MHz | 3.17 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C54 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C71 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C73 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_output_capacitor_stability | C75 (CL05B104KO5NNNC) ESR min over 10 kHz-1 MHz | 51.5 mohm | 1 mohm … – | RT9080 DS9080-09 section 18: output capacitor ESR >= 1 mohm | ✅ |
test_quiescent_current_typical | +3V3 in regulation during the Iq measurement | 3.3 V | 3.23 V … 3.37 V | RT9080 DS9080-09 Table 14 accuracy +/-2 % | ✅ |
test_quiescent_current_typical | LDO quiescent current, typ part, no load | 2 µA | 0A … 2 µA | SPEC.md 3 LDO Iq ≤ 2 µA typ / 4 µA max (typ) (RT9080 DS9080-09 Table 14 IQ 2 uA typ) | ✅ |
test_quiescent_current_max_vs_spec | LDO quiescent current, DS max part, no load, max of 18 corners (at -2 % part, 60 C, VSYS 4.59 V; all 4.0000-4.0000 uA) | 4 µA | 0A … 4 µA | SPEC.md 3 LDO Iq ≤ 2 µA typ / 4 µA max (max; LDO-1) vs RT9080 DS9080-09 Table 14 IQ 4 uA max | ✅ |
test_thermal | RT9080 TJ at 72 mW, TA 60 C | 73.7 C | – … 125 C | RT9080 DS9080-09 section 12 TJ <= 125 C, theta-JA (JEDEC) 189.4 C/W (section 13) | ✅ |
test_reverse_bias_usb_unplug_at_buvlo | [USB unplug, VBAT = BUVLO, dim awake] U1 VOUT - VIN max (reverse I 0.0 mA) | 186 mV | – … 300 mV | RT9080 DS9080-09 section 10 abs max VOUT - VIN <= 0.3 V | ✅ |
test_reverse_bias_on_vsys_collapse[batocp trip] | [batocp trip] U1 VOUT - VIN max (reverse I 0.32 A) | 885 mV | – … 300 mV | RT9080 DS9080-09 section 10 abs max VOUT - VIN <= 0.3 V | ❌ |
test_reverse_bias_on_vsys_collapse[led short] | [led short] U1 VOUT - VIN max (reverse I 4.11 A) | 1.72 V | – … 300 mV | RT9080 DS9080-09 section 10 abs max VOUT - VIN <= 0.3 V | ❌ |
test_fault_output_cap_left_off | FAULT C3 left off: COUT effective at U1 (must fail) | 84 nF | 1 µF … – | RT9080 DS9080-09 17.1 / Fig. 1: >= 1 uF effective | ❌ |
test_fault_output_cap_wrong_value | FAULT C3 = 1u: COUT effective at U1 (must fail) | 445 nF | 1 µF … – | RT9080 DS9080-09 17.1 / Fig. 1: >= 1 uF effective | ❌ |
test_fault_wrong_ldo_variant | FAULT RT9080-28: +3V3 min @ VSYS 4.59 V (must fail) | 2.74 V | 3.15 V … – | WS2812C-V6 VIH 0.6*VDD + nRF VOH = VDD-0.4 V | ❌ |
test_fault_en_strapped_to_gnd | FAULT EN on GND: +3V3 at VBAT 3.7 V (must fail) | 261 pV | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ❌ |
test_fault_output_short | FAULT +3V3 shorted: TJ (must fail) | 652 C | – … 125 C | RT9080 DS9080-09 section 12 TJ <= 125 C | ❌ |
test_fault_output_short | FAULT +3V3 shorted: +3V3 (must fail) | 0.0V | 2.7 V … – | W25Q128JV 9.2 VCC >= 2.7 V | ❌ |
test_gpio_model_reproduces_ps_tables[SD] | SD model 10-90 % edge into 15 pF vs PS 9 ns (typ) | 8.87 ns | 7.2 ns … 10.8 ns | nRF52840 PS 4413_417 v1.1 6.9.3.1 tRF/tHRF (fit +/-20 %) | ✅ |
test_gpio_model_reproduces_ps_tables[SD] | SD model 10-90 % edge into 25 pF vs PS 13 ns (typ) | 13.3 ns | 10.4 ns … 15.6 ns | nRF52840 PS 4413_417 v1.1 6.9.3.1 tRF/tHRF (fit +/-20 %) | ✅ |
test_gpio_model_reproduces_ps_tables[SD] | SD model 10-90 % edge into 50 pF vs PS 25 ns (typ) | 24.7 ns | 20 ns … 30 ns | nRF52840 PS 4413_417 v1.1 6.9.3.1 tRF/tHRF (fit +/-20 %) | ✅ |
test_gpio_model_reproduces_ps_tables[SD] | SD model IOH at VDD-0.4 V (min corner) | 1 mA | 990 µA … 1.01 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOH min | ✅ |
test_gpio_model_reproduces_ps_tables[SD] | SD model IOL at VSS+0.4 V (min corner) | 1 mA | 990 µA … 1.01 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOL min | ✅ |
test_gpio_model_reproduces_ps_tables[SD] | SD model IOH at VDD-0.4 V (max corner) | 4 mA | 3.96 mA … 4.04 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOH max | ✅ |
test_gpio_model_reproduces_ps_tables[SD] | SD model IOL at VSS+0.4 V (max corner) | 4 mA | 3.96 mA … 4.04 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOL max | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model 10-90 % edge into 15 pF vs PS 4 ns (typ) | 3.89 ns | 3.2 ns … 4.8 ns | nRF52840 PS 4413_417 v1.1 6.9.3.1 tRF/tHRF (fit +/-20 %) | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model 10-90 % edge into 25 pF vs PS 5 ns (typ) | 5 ns | 4 ns … 6 ns | nRF52840 PS 4413_417 v1.1 6.9.3.1 tRF/tHRF (fit +/-20 %) | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model 10-90 % edge into 50 pF vs PS 8 ns (typ) | 7.83 ns | 6.4 ns … 9.6 ns | nRF52840 PS 4413_417 v1.1 6.9.3.1 tRF/tHRF (fit +/-20 %) | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model IOH at VDD-0.4 V (min corner) | 6 mA | 5.94 mA … 6.06 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOH min | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model IOL at VSS+0.4 V (min corner) | 6 mA | 5.94 mA … 6.06 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOL min | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model IOH at VDD-0.4 V (max corner) | 14 mA | 13.9 mA … 14.1 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOH max | ✅ |
test_gpio_model_reproduces_ps_tables[HD] | HD model IOL at VSS+0.4 V (max corner) | 15 mA | 14.8 mA … 15.2 mA | nRF52840 PS 4413_417 v1.1 6.9.3.1 IOL max | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.6 VDD, VBAT 3.0 V (VSYS 3.00 V, VDD 2.956 V, SD/slow_rise) | 1.14 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.55 VDD, VBAT 3.0 V | 1.29 V | 0.0V … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIH | ✅ |
test_r27_high_level_margin_per_supply | peak during 312 ns T0H - 0.6 VDD, VBAT 3.0 V (VSYS 3.00 V, VDD 2.956 V, SD/slow_rise) | 1.14 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | P0.06 DC load when high <= 0.5 mA (VOH,SD test condition), VBAT 3.0 V | 26.6 µA | – … 500 µA | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD | ✅ |
test_r27_high_level_margin_per_supply | PS-table bound (VOH = VDD-0.4 V, minus R40/R43 drop) - 0.6 VDD, VBAT 3.0 V | 750 mV | 0.0V … – | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD + Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | (info) DC high - 0.7 VDD legacy pre-V6 threshold, VBAT 3.0 V | 837 mV | – … – | legacy WS2812B VIH 0.7 VDD - not the fitted V6 part's limit | ✅ |
test_r27_high_level_margin_per_supply | (info) VLED - LED rated VDD min, VBAT 3.0 V | -300 mV | – … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 VDD +3.3 ... +5.3 V (LED supply, not the data line) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.6 VDD, VBAT 3.7 V (VSYS 3.70 V, VDD 3.201 V, SD/slow_rise) | 961 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.55 VDD, VBAT 3.7 V | 1.15 V | 0.0V … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIH | ✅ |
test_r27_high_level_margin_per_supply | peak during 312 ns T0H - 0.6 VDD, VBAT 3.7 V (VSYS 3.70 V, VDD 3.201 V, SD/slow_rise) | 961 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | P0.06 DC load when high <= 0.5 mA (VOH,SD test condition), VBAT 3.7 V | 29 µA | – … 500 µA | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD | ✅ |
test_r27_high_level_margin_per_supply | PS-table bound (VOH = VDD-0.4 V, minus R40/R43 drop) - 0.6 VDD, VBAT 3.7 V | 575 mV | 0.0V … – | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD + Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | (info) DC high - 0.7 VDD legacy pre-V6 threshold, VBAT 3.7 V | 591 mV | – … – | legacy WS2812B VIH 0.7 VDD - not the fitted V6 part's limit | ✅ |
test_r27_high_level_margin_per_supply | (info) VLED - LED rated VDD min, VBAT 3.7 V | 400 mV | – … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 VDD +3.3 ... +5.3 V (LED supply, not the data line) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.6 VDD, VBAT 4.2 V (VSYS 4.20 V, VDD 3.201 V, SD/slow_rise) | 661 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.55 VDD, VBAT 4.2 V | 871 mV | 0.0V … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIH | ✅ |
test_r27_high_level_margin_per_supply | peak during 312 ns T0H - 0.6 VDD, VBAT 4.2 V (VSYS 4.20 V, VDD 3.201 V, SD/slow_rise) | 661 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | P0.06 DC load when high <= 0.5 mA (VOH,SD test condition), VBAT 4.2 V | 29 µA | – … 500 µA | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD | ✅ |
test_r27_high_level_margin_per_supply | PS-table bound (VOH = VDD-0.4 V, minus R40/R43 drop) - 0.6 VDD, VBAT 4.2 V | 275 mV | 0.0V … – | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD + Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | (info) DC high - 0.7 VDD legacy pre-V6 threshold, VBAT 4.2 V | 241 mV | – … – | legacy WS2812B VIH 0.7 VDD - not the fitted V6 part's limit | ✅ |
test_r27_high_level_margin_per_supply | (info) VLED - LED rated VDD min, VBAT 4.2 V | 900 mV | – … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 VDD +3.3 ... +5.3 V (LED supply, not the data line) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.6 VDD, USB VSYS_REG -2 % (VSYS 4.41 V, VDD 3.201 V, SD/slow_rise) | 535 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.55 VDD, USB VSYS_REG -2 % | 755 mV | 0.0V … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIH | ✅ |
test_r27_high_level_margin_per_supply | peak during 312 ns T0H - 0.6 VDD, USB VSYS_REG -2 % (VSYS 4.41 V, VDD 3.201 V, SD/slow_rise) | 535 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | P0.06 DC load when high <= 0.5 mA (VOH,SD test condition), USB VSYS_REG -2 % | 29 µA | – … 500 µA | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD | ✅ |
test_r27_high_level_margin_per_supply | PS-table bound (VOH = VDD-0.4 V, minus R40/R43 drop) - 0.6 VDD, USB VSYS_REG -2 % | 149 mV | 0.0V … – | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD + Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | (info) DC high - 0.7 VDD legacy pre-V6 threshold, USB VSYS_REG -2 % | 93.7 mV | – … – | legacy WS2812B VIH 0.7 VDD - not the fitted V6 part's limit | ✅ |
test_r27_high_level_margin_per_supply | (info) VLED - LED rated VDD min, USB VSYS_REG -2 % | 1.11 V | – … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 VDD +3.3 ... +5.3 V (LED supply, not the data line) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.6 VDD, USB VBUS 4.5 V / VSYS_REG nom (VSYS 4.50 V, VDD 3.201 V, SD/slow_rise) | 481 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.55 VDD, USB VBUS 4.5 V / VSYS_REG nom | 706 mV | 0.0V … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIH | ✅ |
test_r27_high_level_margin_per_supply | peak during 312 ns T0H - 0.6 VDD, USB VBUS 4.5 V / VSYS_REG nom (VSYS 4.50 V, VDD 3.201 V, SD/slow_rise) | 481 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | P0.06 DC load when high <= 0.5 mA (VOH,SD test condition), USB VBUS 4.5 V / VSYS_REG nom | 29 µA | – … 500 µA | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD | ✅ |
test_r27_high_level_margin_per_supply | PS-table bound (VOH = VDD-0.4 V, minus R40/R43 drop) - 0.6 VDD, USB VBUS 4.5 V / VSYS_REG nom | 94.6 mV | 0.0V … – | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD + Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | (info) DC high - 0.7 VDD legacy pre-V6 threshold, USB VBUS 4.5 V / VSYS_REG nom | 30.7 mV | – … – | legacy WS2812B VIH 0.7 VDD - not the fitted V6 part's limit | ✅ |
test_r27_high_level_margin_per_supply | (info) VLED - LED rated VDD min, USB VBUS 4.5 V / VSYS_REG nom | 1.2 V | – … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 VDD +3.3 ... +5.3 V (LED supply, not the data line) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.6 VDD, USB VBUS 5.0-5.5 V, VSYS_REG +2 % (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 427 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | DC high at D101.DI - 0.55 VDD, USB VBUS 5.0-5.5 V, VSYS_REG +2 % | 656 mV | 0.0V … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIH | ✅ |
test_r27_high_level_margin_per_supply | peak during 312 ns T0H - 0.6 VDD, USB VBUS 5.0-5.5 V, VSYS_REG +2 % (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 427 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | P0.06 DC load when high <= 0.5 mA (VOH,SD test condition), USB VBUS 5.0-5.5 V, VSYS_REG +2 % | 29 µA | – … 500 µA | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD | ✅ |
test_r27_high_level_margin_per_supply | PS-table bound (VOH = VDD-0.4 V, minus R40/R43 drop) - 0.6 VDD, USB VBUS 5.0-5.5 V, VSYS_REG +2 % | 40.6 mV | 0.0V … – | nRF52840 PS 4413_417 v1.1 6.9.3.1 VOH,SD + Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_r27_high_level_margin_per_supply | (info) DC high - 0.7 VDD legacy pre-V6 threshold, USB VBUS 5.0-5.5 V, VSYS_REG +2 % | -32.3 mV | – … – | legacy WS2812B VIH 0.7 VDD - not the fitted V6 part's limit | ✅ |
test_r27_high_level_margin_per_supply | (info) VLED - LED rated VDD min, USB VBUS 5.0-5.5 V, VSYS_REG +2 % | 1.29 V | – … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 VDD +3.3 ... +5.3 V (LED supply, not the data line) | ✅ |
test_low_level_and_abs_max | DC low at D101.DI (VSYS 4.59 V, VDD 3.366 V, HD/slow_rise) | -245 µV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL | ✅ |
test_low_level_and_abs_max | D101.DI max - VDD (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall) | -51.7 mV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_low_level_and_abs_max | D101.DI min (VSYS 3.00 V, VDD 2.956 V, SD/slow_fall) | -614 µV | -300 mV … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_low_level_and_abs_max | P0.06 pad max - VDD (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall) | -831 µV | – … 300 mV | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_low_level_and_abs_max | P0.06 pad min (VSYS 3.00 V, VDD 2.956 V, SD/slow_fall) | -395 µV | -300 mV … – | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 287 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T0H seen by D101, longest (VSYS 3.70 V, VDD 3.366 V, SD/slow_fall) | 332 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 599 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, SD/slow_fall) | 645 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T0L seen by D101, shortest (VSYS 4.41 V, VDD 3.366 V, SD/slow_fall) | 918 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 963 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T1L seen by D101, shortest (VSYS 3.70 V, VDD 3.366 V, SD/slow_fall) | 605 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | SD drive: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 651 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[SD] | (info) SD 10-90 % rise at D101.DI, slowest (VSYS 4.59 V, VDD 3.366 V, SD/slow_rise) | 27.8 ns | – … – | simulation | ✅ |
test_pulse_widths_at_led[SD] | (info) SD 10-90 % fall at D101.DI, slowest (VSYS 4.59 V, VDD 3.366 V, SD/slow_fall) | 27.8 ns | – … – | simulation | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise) | 300 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T0H seen by D101, longest (VSYS 3.70 V, VDD 3.366 V, HD/slow_fall) | 322 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise) | 613 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T1H seen by D101, longest (VSYS 3.70 V, VDD 3.366 V, HD/slow_fall) | 635 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/slow_fall) | 928 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise) | 950 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T1L seen by D101, shortest (VSYS 3.70 V, VDD 3.366 V, HD/slow_fall) | 615 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | HD drive: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise) | 637 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_at_led[HD] | (info) HD 10-90 % rise at D101.DI, slowest (VSYS 3.00 V, VDD 2.956 V, HD/slow_rise) | 12.6 ns | – … – | simulation | ✅ |
test_pulse_widths_at_led[HD] | (info) HD 10-90 % fall at D101.DI, slowest (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall) | 12.7 ns | – … – | simulation | ✅ |
test_tolerance_extremes | tol. extremes: DC high - 0.6 VDD at VSYS 4.59 V | 426 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_tolerance_extremes | tol. extremes: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 287 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 332 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 599 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 644 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 918 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 963 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 606 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_tolerance_extremes | tol. extremes: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 651 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: DC high - 0.6 VDD at VSYS 4.59 V | 434 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_temperature[-10] | -10 C: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 299 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 322 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 611 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 634 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 928 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 951 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 616 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[-10] | -10 C: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 639 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: DC high - 0.6 VDD at VSYS 4.59 V | 433 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_temperature[25] | 25 C: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 297 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 323 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 610 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 635 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 927 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 953 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 615 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[25] | 25 C: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 640 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: DC high - 0.6 VDD at VSYS 4.59 V | 432 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_temperature[60] | 60 C: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 296 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 324 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 608 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 636 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 926 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 954 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 614 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_temperature[60] | 60 C: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/typ) | 642 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: DC high - 0.6 VDD at VSYS 4.59 V | 427 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_load_extremes | load extremes: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 283 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 335 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 595 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 647 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 915 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 967 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall) | 603 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 655 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_load_extremes | load extremes: P0.06 pad max - VDD | -3.07 mV | – … 300 mV | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | (info) LED_DIN_MCU length (routed), Z0 91 ohm | 842 µm | – … – | kicad_pcb | ✅ |
test_trace_and_r40_placement | (info) LED_DIN_R length (routed), Z0 91 ohm | 43.2 mm | – … – | kicad_pcb | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: P0.06 pad max - VDD | -776 µV | – … 300 mV | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: P0.06 pad min | 25.3 µV | -300 mV … – | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: D101.DI max - VDD | -51.2 mV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 310 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 314 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 623 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 627 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 936 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 940 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 623 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 627 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: P0.06 pad max - VDD | -776 µV | – … 300 mV | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: P0.06 pad min | 25.3 µV | -300 mV … – | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: D101.DI max - VDD | -51.2 mV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 310 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 314 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 623 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 627 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 936 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 940 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 623 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 627 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): P0.06 pad max - VDD | -775 µV | – … 300 mV | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): P0.06 pad min | 19.5 µV | -300 mV … – | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): D101.DI max - VDD | -51 mV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 309 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T0H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 315 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 622 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T1H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 628 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 935 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T0L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 941 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 622 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R lumped, TEDGE/2 + traces x2 (sensitivity): T1L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 628 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): P0.06 pad max - VDD | -776 µV | – … 300 mV | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): P0.06 pad min | 25.3 µV | -300 mV … – | nRF52840 PS 4413_417 v1.1 Table 173 VI/O -0.3 ... VDD+0.3 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): D101.DI max - VDD | -51.2 mV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 310 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T0H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 315 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 622 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T1H seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 627 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 935 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T0L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 940 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 623 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_trace_and_r40_placement | R40 as placed, LED_DIN_R as an LC line, TEDGE/2 + traces x2 (sensitivity): T1L seen by D101, longest (VSYS 4.59 V, VDD 3.366 V, HD/strong) | 628 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_lv1t34_model_tpd_matches_ds | LV1T34 model tplh at VCC 3.3 V, 15 pF (calibrated to tpd max, +/-1 % numerics) | 8 ns | 7.6 ns … 8.08 ns | SN74LV1T34 DS SCLS743E 6.6 tpd max | ✅ |
test_lv1t34_model_tpd_matches_ds | LV1T34 model tphl at VCC 3.3 V, 15 pF (calibrated to tpd max, +/-1 % numerics) | 8 ns | 7.6 ns … 8.08 ns | SN74LV1T34 DS SCLS743E 6.6 tpd max | ✅ |
test_lv1t34_model_tpd_matches_ds | LV1T34 model tplh at VCC 5.0 V, 15 pF (calibrated to tpd max, +/-1 % numerics) | 6.5 ns | 6.17 ns … 6.57 ns | SN74LV1T34 DS SCLS743E 6.6 tpd max | ✅ |
test_lv1t34_model_tpd_matches_ds | LV1T34 model tphl at VCC 5.0 V, 15 pF (calibrated to tpd max, +/-1 % numerics) | 6.5 ns | 6.17 ns … 6.57 ns | SN74LV1T34 DS SCLS743E 6.6 tpd max | ✅ |
test_u43_option_levels | U43: DC high at D101.DI - 0.6 VDD, VBAT 3.0 V | 1.2 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_u43_option_levels | (info) U43: DC high - 0.7 VDD legacy threshold, VBAT 3.0 V | 900 mV | – … – | legacy WS2812B VIH 0.7 VDD | ✅ |
test_u43_option_levels | U43: DC high at D101.DI - 0.6 VDD, VBAT 3.7 V | 1.48 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_u43_option_levels | (info) U43: DC high - 0.7 VDD legacy threshold, VBAT 3.7 V | 1.11 V | – … – | legacy WS2812B VIH 0.7 VDD | ✅ |
test_u43_option_levels | U43: DC high at D101.DI - 0.6 VDD, VBAT 4.2 V | 1.68 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_u43_option_levels | (info) U43: DC high - 0.7 VDD legacy threshold, VBAT 4.2 V | 1.26 V | – … – | legacy WS2812B VIH 0.7 VDD | ✅ |
test_u43_option_levels | U43: DC high at D101.DI - 0.6 VDD, USB VSYS_REG -2 % | 1.76 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_u43_option_levels | (info) U43: DC high - 0.7 VDD legacy threshold, USB VSYS_REG -2 % | 1.32 V | – … – | legacy WS2812B VIH 0.7 VDD | ✅ |
test_u43_option_levels | U43: DC high at D101.DI - 0.6 VDD, USB VBUS 4.5 V / VSYS_REG nom | 1.8 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_u43_option_levels | (info) U43: DC high - 0.7 VDD legacy threshold, USB VBUS 4.5 V / VSYS_REG nom | 1.35 V | – … – | legacy WS2812B VIH 0.7 VDD | ✅ |
test_u43_option_levels | U43: DC high at D101.DI - 0.6 VDD, USB VBUS 5.0-5.5 V, VSYS_REG +2 % | 1.84 V | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_u43_option_levels | (info) U43: DC high - 0.7 VDD legacy threshold, USB VBUS 5.0-5.5 V, VSYS_REG +2 % | 1.38 V | – … – | legacy WS2812B VIH 0.7 VDD | ✅ |
test_u43_option_levels | U43: DC low at D101.DI | -50 µV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL | ✅ |
test_u43_option_levels | U43: D101.DI max - VDD | -100 µV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_u43_option_levels | U43: D101.DI min | -50.1 µV | -300 mV … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_u43_input_conditions | U43 A high - VIH(VCC=3.00 V) | 1.55 V | 0.0V … – | SN74LV1T34 DS SCLS743E 6.5 VIH | ✅ |
test_u43_input_conditions | U43 A high <= VI max (VCC=3.00 V) | 2.94 V | – … 5.5 V | SN74LV1T34 DS SCLS743E 6.3 VI | ✅ |
test_u43_input_conditions | U43 A high - VIH(VCC=3.70 V) | 1.15 V | 0.0V … – | SN74LV1T34 DS SCLS743E 6.5 VIH | ✅ |
test_u43_input_conditions | U43 A high <= VI max (VCC=3.70 V) | 3.18 V | – … 5.5 V | SN74LV1T34 DS SCLS743E 6.3 VI | ✅ |
test_u43_input_conditions | U43 A high - VIH(VCC=4.20 V) | 1.15 V | 0.0V … – | SN74LV1T34 DS SCLS743E 6.5 VIH | ✅ |
test_u43_input_conditions | U43 A high <= VI max (VCC=4.20 V) | 3.18 V | – … 5.5 V | SN74LV1T34 DS SCLS743E 6.3 VI | ✅ |
test_u43_input_conditions | U43 A high - VIH(VCC=4.41 V) | 1.15 V | 0.0V … – | SN74LV1T34 DS SCLS743E 6.5 VIH | ✅ |
test_u43_input_conditions | U43 A high <= VI max (VCC=4.41 V) | 3.18 V | – … 5.5 V | SN74LV1T34 DS SCLS743E 6.3 VI | ✅ |
test_u43_input_conditions | U43 A high - VIH(VCC=4.50 V) | 1.15 V | 0.0V … – | SN74LV1T34 DS SCLS743E 6.5 VIH | ✅ |
test_u43_input_conditions | U43 A high <= VI max (VCC=4.50 V) | 3.18 V | – … 5.5 V | SN74LV1T34 DS SCLS743E 6.3 VI | ✅ |
test_u43_input_conditions | U43 A high - VIH(VCC=4.59 V) | 1.15 V | 0.0V … – | SN74LV1T34 DS SCLS743E 6.5 VIH | ✅ |
test_u43_input_conditions | U43 A high <= VI max (VCC=4.59 V) | 3.18 V | – … 5.5 V | SN74LV1T34 DS SCLS743E 6.3 VI | ✅ |
test_u43_input_conditions | U43 A rise rate (VSYS 3.00 V, VDD 2.956 V, SD/weak) | 8.71 ns/V | – … 20 ns/V | SN74LV1T34 DS SCLS743E 6.3 dt/dv | ✅ |
test_u43_input_conditions | U43 A fall rate (VSYS 3.00 V, VDD 2.956 V, SD/weak) | 8.71 ns/V | – … 20 ns/V | SN74LV1T34 DS SCLS743E 6.3 dt/dv | ✅ |
test_u43_input_conditions | U43 Y low at D101.DI | -50 µV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL | ✅ |
test_u43_option_pulse_widths | U43 fitted: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 297 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T0H seen by D101, longest (VSYS 3.00 V, VDD 2.956 V, HD/strong) | 325 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 610 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T1H seen by D101, longest (VSYS 3.00 V, VDD 2.956 V, HD/strong) | 637 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T0L seen by D101, shortest (VSYS 3.00 V, VDD 2.956 V, HD/strong) | 925 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 953 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T1L seen by D101, shortest (VSYS 3.00 V, VDD 2.956 V, HD/strong) | 613 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_u43_option_pulse_widths | U43 fitted: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise) | 640 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1): DC high at D101.DI - 0.6 VDD (VSYS 4.59 V, VDD 3.201 V, HD/weak, PS bound) | 438 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD); firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 294 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_fall, PS bound) | 327 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 607 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_fall, PS bound) | 640 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_fall, PS bound) | 923 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 956 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_fall, PS bound) | 610 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), default path: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 643 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 297 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T0H seen by D101, longest (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall, PS bound) | 332 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 610 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T1H seen by D101, longest (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall, PS bound) | 645 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T0L seen by D101, shortest (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall, PS bound) | 918 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 953 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T1L seen by D101, shortest (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall, PS bound) | 605 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, HD/slow_rise, PS bound) | 640 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: A rise rate (VSYS 3.00 V, VDD 2.956 V, HD/slow_rise, PS bound) | 5.19 ns/V | – … 20 ns/V | SN74LV1T34 DS SCLS743E 6.3 dt/dv; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[HD] | PS-guaranteed HD (fw rule LED-DATA-V1: H0H1), U43 fitted: A fall rate (VSYS 3.00 V, VDD 2.956 V, HD/slow_fall, PS bound) | 5.24 ns/V | – … 20 ns/V | SN74LV1T34 DS SCLS743E 6.3 dt/dv; firmware rule LED-DATA-V1 (docs/firmware.md 3.1 / 6.1, SPEC 5.4): P0.06 nordic,drive-mode = NRF_DRIVE_H0H1 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default): DC high at D101.DI - 0.6 VDD (VSYS 4.59 V, VDD 3.201 V, SD/weak, PS bound) | 427 mV | 0.0V … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 241 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 374 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 554 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ❌ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 686 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 876 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 1.01 µs | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ❌ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 564 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ❌ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), default path: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 696 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T0H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 268 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T0H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 364 ns | 220 ns … 380 ns | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T1H seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 580 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T1H seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 677 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T0L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 886 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T0L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 982 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T1L seen by D101, shortest (VSYS 4.59 V, VDD 3.201 V, SD/slow_fall, PS bound) | 573 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ❌ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: T1L seen by D101, longest (VSYS 4.59 V, VDD 3.201 V, SD/slow_rise, PS bound) | 670 ns | 580 ns … 1 µs | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: A rise rate (VSYS 3.00 V, VDD 2.956 V, SD/weak, PS bound) | 19.7 ns/V | – … 20 ns/V | SN74LV1T34 DS SCLS743E 6.3 dt/dv | ✅ |
test_pulse_widths_ps_guaranteed_drive[SD] | PS-guaranteed SD (old pinctrl default), U43 fitted: A fall rate (VSYS 3.00 V, VDD 2.956 V, SD/weak, PS bound) | 19.2 ns/V | – … 20 ns/V | SN74LV1T34 DS SCLS743E 6.3 dt/dv | ✅ |
test_p006_hiz_din_held_low | P0.06 high-Z: D101.DI max (R41 vs II +/-1 uA) | 100 mV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL, II; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_p006_hiz_din_held_low | P0.06 high-Z: D101.DI min | -100 mV | -300 mV … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.2 最大额定值 VI -0.3 ... VDD+0.7 V | ✅ |
test_p006_hiz_din_held_low | U43 fitted, P0.06 high-Z: U43.A - VIL(VCC=3.00 V), II +1 uA | -750 mV | – … 0.0V | SN74LV1T34 DS SCLS743E 6.5 VIL, II; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_p006_hiz_din_held_low | U43 fitted, P0.06 high-Z: U43.A - VIL(VCC=3.00 V), II -1 uA | -550 mV | – … 0.0V | SN74LV1T34 DS SCLS743E 6.5 VIL, II; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_p006_hiz_din_held_low | U43 fitted, P0.06 high-Z: U43.A - VIL(VCC=4.59 V), II +1 uA | -900 mV | – … 0.0V | SN74LV1T34 DS SCLS743E 6.5 VIL, II; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_p006_hiz_din_held_low | U43 fitted, P0.06 high-Z: U43.A - VIL(VCC=4.59 V), II -1 uA | -700 mV | – … 0.0V | SN74LV1T34 DS SCLS743E 6.5 VIL, II; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_p006_hiz_din_held_low | U43 fitted, P0.06 high-Z: D101.DI (Y) max | 50 µV | – … 700 mV | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL | ✅ |
test_fault_r41_wrong_value | FAULT DETECTED: R41 = 100 R: DC high at D101.DI - 0.6 VDD >= 0 (faulted value -2.34 V, limit 0.0V ... -) | 1 | 1 … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_fault_u43_fitted_r43_left_on | FAULT DETECTED: U43 + R43 both fitted: bit pattern reproduced at D101.DI (faulted value not reproduced, limit 1 ... -) | 1 | 1 … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_fault_r43_removed_u43_not_fitted | FAULT DETECTED: R43 removed, no U43: DC high at D101.DI - 0.6 VDD >= 0 (faulted value -3.06 V, limit 0.0V ... -) | 1 | 1 … – | Worldsemi WS2812B-series V6 PCN 2025-09-30 item 6 (0.6 VDD) | ✅ |
test_fault_r40_wrong_value | FAULT DETECTED: R40 = 220 k: T0H shortest within window (faulted value not reproduced, limit 220 ns ... 380 ns) | 1 | 1 … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_fault_r41_left_off | FAULT DETECTED: R41 left off: P0.06 high-Z, D101.DI <= VIL (faulted value 3.74 V, limit - ... 700 mV) | 1 | 1 … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_fault_r41_to_vled | FAULT DETECTED: R41 to VLED: P0.06 high-Z, D101.DI <= VIL (faulted value 3.8 V, limit - ... 700 mV) | 1 | 1 … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3 电气参数 (TA 25 C, VDD 5 V) VIL; sheets/leds.py 'LED data input': 100k pull-down holds DIN low while P0.06 is high-Z (reset/DFU) | ✅ |
test_fault_r40_ten_times | FAULT DETECTED: R40 = 2.2 k: T1H shortest within window (faulted value 541 ns, limit 580 ns ... 1 µs) | 1 | 1 … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_fault_c43_on_led_din | FAULT DETECTED: C43 on LED_DIN: bit pattern reproduced at D101.DI (faulted value not reproduced, limit 1 ... -) | 1 | 1 … – | WS2812C-2020-V6 DS V1.0 (2026-05-21) p.3-4 数据传输时间 | ✅ |
test_model_turn_on_matches_table_7_6[3.6] | tR model @3.6 V | 1.58 ms | 1.36 ms … 1.84 ms | TPS22917 DS SLVSDW8B Table 7.6 @3.6 V, CT 1000 pF (typ, +-15 % model correlation) | ✅ |
test_model_turn_on_matches_table_7_6[3.6] | tON model @3.6 V | 3.94 ms | 3.23 ms … 4.37 ms | TPS22917 DS SLVSDW8B Table 7.6 @3.6 V, CT 1000 pF (typ, +-15 % model correlation) | ✅ |
test_model_turn_on_matches_table_7_6[3.6] | SRON model @3.6 V | 1.83 mV/us | 1.61 mV/us … 2.19 mV/us | TPS22917 DS SLVSDW8B Table 7.6 @3.6 V, CT 1000 pF (typ, +-15 % model correlation) | ✅ |
test_model_turn_on_matches_table_7_6[5.0] | tR model @5.0 V | 1.81 ms | 1.53 ms … 2.07 ms | TPS22917 DS SLVSDW8B Table 7.6 @5.0 V, CT 1000 pF (typ, +-15 % model correlation) | ✅ |
test_model_turn_on_matches_table_7_6[5.0] | tON model @5.0 V | 4.15 ms | 3.4 ms … 4.6 ms | TPS22917 DS SLVSDW8B Table 7.6 @5.0 V, CT 1000 pF (typ, +-15 % model correlation) | ✅ |
test_model_turn_on_matches_table_7_6[5.0] | SRON model @5.0 V | 2.21 mV/us | 1.96 mV/us … 2.65 mV/us | TPS22917 DS SLVSDW8B Table 7.6 @5.0 V, CT 1000 pF (typ, +-15 % model correlation) | ✅ |
test_model_ron_qod_and_on_threshold[3.6] | RON model @3.6 V 200 mA | 76.6 mOhm | – … 110 mOhm | TPS22917 DS SLVSDW8B Table 7.5 RON max 25 C | ✅ |
test_model_ron_qod_and_on_threshold[3.6] | QOD model @3.6 V | 145 Ohm | 120 Ohm … 180 Ohm | TPS22917 DS SLVSDW8B Table 7.5 QOD 150 Ohm typ (+-20 % correlation) | ✅ |
test_model_ron_qod_and_on_threshold[3.6] | ON rising trip model @3.6 V | 672 mV | 350 mV … 1 V | TPS22917 DS SLVSDW8B Table 7.3 VIL max / VIH min | ✅ |
test_model_ron_qod_and_on_threshold[3.6] | ON falling trip model @3.6 V | 613 mV | 350 mV … 1 V | TPS22917 DS SLVSDW8B Table 7.3 VIL max / VIH min | ✅ |
test_model_ron_qod_and_on_threshold[5.0] | RON model @5.0 V 200 mA | 75.7 mOhm | – … 100 mOhm | TPS22917 DS SLVSDW8B Table 7.5 RON max 25 C | ✅ |
test_model_ron_qod_and_on_threshold[5.0] | QOD model @5.0 V | 145 Ohm | 120 Ohm … 180 Ohm | TPS22917 DS SLVSDW8B Table 7.5 QOD 150 Ohm typ (+-20 % correlation) | ✅ |
test_model_ron_qod_and_on_threshold[5.0] | ON rising trip model @5.0 V | 706 mV | 350 mV … 1 V | TPS22917 DS SLVSDW8B Table 7.3 VIL max / VIH min | ✅ |
test_model_ron_qod_and_on_threshold[5.0] | ON falling trip model @5.0 V | 662 mV | 350 mV … 1 V | TPS22917 DS SLVSDW8B Table 7.3 VIL max / VIH min | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0-25] | U2 tON (ON -> VLED 90 %) bat3.0 25C | 3.86 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0-25] | U2 tR vs Table 7.6 x C7 bat3.0 25C | 1.52 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C7 (+-20 %, VIN 3.6 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0-25] | U2 inrush peak bat3.0 25C | 77.6 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0-25] | battery current peak bat3.0 25C | 128 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0-25] | +3V3 min during U2 turn-on bat3.0 25C | 2.92 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0-25] | VLED settles to VSYS bat3.0 25C | 2.98 V | 2.92 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | U2 tON (ON -> VLED 90 %) bat3.7 25C | 3.94 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | U2 tR vs Table 7.6 x C7 bat3.7 25C | 1.58 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C7 (+-20 %, VIN 3.6 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | U2 inrush peak bat3.7 25C | 91.6 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | battery current peak bat3.7 25C | 142 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | +3V3 min during U2 turn-on bat3.7 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | +3V3 min vs POFWARN bat3.7 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.7-25] | VLED settles to VSYS bat3.7 25C | 3.68 V | 3.61 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | U2 tON (ON -> VLED 90 %) bat4.2 25C | 4.01 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | U2 tR vs Table 7.6 x C7 bat4.2 25C | 1.67 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C7 (+-20 %, VIN 3.6 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | U2 inrush peak bat4.2 25C | 98.4 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | battery current peak bat4.2 25C | 148 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | +3V3 min during U2 turn-on bat4.2 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | +3V3 min vs POFWARN bat4.2 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-25] | VLED settles to VSYS bat4.2 25C | 4.18 V | 4.1 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[usb4.5-25] | U2 tON (ON -> VLED 90 %) usb4.5 25C | 4.06 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[usb4.5-25] | U2 tR vs Table 7.6 x C7 usb4.5 25C | 1.72 ms | 1.44 ms … 2.16 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.8 us/pF x C7 (+-20 %, VIN 5.0 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[usb4.5-25] | U2 inrush peak usb4.5 25C | 102 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[usb4.5-25] | +3V3 min during U2 turn-on usb4.5 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[usb4.5-25] | +3V3 min vs POFWARN usb4.5 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u2_turn_on_supply_and_temperature[usb4.5-25] | VLED settles to VSYS usb4.5 25C | 4.48 V | 4.39 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.0-25] | U2 tON (ON -> VLED 90 %) usb5.0 25C | 4.06 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.0-25] | U2 tR vs Table 7.6 x C7 usb5.0 25C | 1.72 ms | 1.44 ms … 2.16 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.8 us/pF x C7 (+-20 %, VIN 5.0 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.0-25] | U2 inrush peak usb5.0 25C | 102 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.0-25] | +3V3 min during U2 turn-on usb5.0 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.0-25] | +3V3 min vs POFWARN usb5.0 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.0-25] | VLED settles to VSYS usb5.0 25C | 4.49 V | 4.4 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.5-25] | U2 tON (ON -> VLED 90 %) usb5.5 25C | 4.06 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.5-25] | U2 tR vs Table 7.6 x C7 usb5.5 25C | 1.72 ms | 1.44 ms … 2.16 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.8 us/pF x C7 (+-20 %, VIN 5.0 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.5-25] | U2 inrush peak usb5.5 25C | 102 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.5-25] | +3V3 min during U2 turn-on usb5.5 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.5-25] | +3V3 min vs POFWARN usb5.5 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u2_turn_on_supply_and_temperature[usb5.5-25] | VLED settles to VSYS usb5.5 25C | 4.49 V | 4.4 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0--10] | U2 tON (ON -> VLED 90 %) bat3.0 -10C | 3.85 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0--10] | U2 tR vs Table 7.6 x C7 bat3.0 -10C | 1.51 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C7 (+-20 %, VIN 3.6 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0--10] | U2 inrush peak bat3.0 -10C | 78.1 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0--10] | battery current peak bat3.0 -10C | 128 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0--10] | +3V3 min during U2 turn-on bat3.0 -10C | 2.88 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat3.0--10] | VLED settles to VSYS bat3.0 -10C | 2.97 V | 2.91 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | U2 tON (ON -> VLED 90 %) bat4.2 60C | 4.02 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget = the former firmware wait, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | U2 tR vs Table 7.6 x C7 bat4.2 60C | 1.67 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C7 (+-20 %, VIN 3.6 V row) | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | U2 inrush peak bat4.2 60C | 98.2 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | battery current peak bat4.2 60C | 148 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | +3V3 min during U2 turn-on bat4.2 60C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | +3V3 min vs POFWARN bat4.2 60C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u2_turn_on_supply_and_temperature[bat4.2-60] | VLED settles to VSYS bat4.2 60C | 4.19 V | 4.1 V … – | TPS22917 DS SLVSDW8B Table 9-2 ON=H: VOUT = VIN | ✅ |
test_u2_turn_on_tolerance_extremes | U2 tON worst tolerance corner (C7/C8/C9) | 4.4 ms | – … 5 ms | SPEC 5.1 tON ~3.8-4.0 ms; 5 ms budget, half the >= 10 ms wait of docs/firmware.md 6.4 (LED-DATA-V4) | ✅ |
test_u2_turn_on_tolerance_extremes | U2 inrush worst tolerance corner (C7/C8/C9) | 119 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_fault_ct_cap_missing_inrush | FAULT DETECTED: U2 inrush with C7 missing | 3.06 A | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ❌ |
test_fault_ct_cap_missing_inrush | FAULT DETECTED: battery current with C7 missing | 2.62 A | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A | ❌ |
test_fault_ct_bridged_to_vin | FAULT DETECTED: U2 tON with CT bridged to VIN | infs | – … 10 ms | docs/firmware.md 6.4: firmware waits >= 10 ms after LED_PWR_EN (LED-DATA-V4) | ❌ |
test_fault_ct_cap_ten_times_too_big | FAULT DETECTED: U2 tON with C7 = 10n | infs | – … 10 ms | docs/firmware.md 6.4: firmware waits >= 10 ms after LED_PWR_EN (LED-DATA-V4) | ❌ |
test_fault_ct_cap_ten_times_too_small | FAULT DETECTED: +3V3 min during U2 turn-on with C7 = 100p, bat3.0 -10C | 2.59 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ❌ |
test_u2_qod_discharge[bat3.0] | VLED to 10 % after LED_PWR_EN low bat3.0 | 24.1 ms | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge' | ✅ |
test_u2_qod_discharge[bat3.0] | tFALL vs SLVSDW8B Eq. 4 bat3.0 | 23 ms | 19.9 ms … 26.9 ms | TPS22917 DS SLVSDW8B 9.3.3 Eq. 4 tFALL = 2.2 (R4 + QOD 150 Ohm) CL (+-15 % model correlation) | ✅ |
test_u2_qod_discharge[bat4.2] | VLED to 10 % after LED_PWR_EN low bat4.2 | 23.9 ms | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge' | ✅ |
test_u2_qod_discharge[bat4.2] | tFALL vs SLVSDW8B Eq. 4 bat4.2 | 22.8 ms | 19.9 ms … 26.9 ms | TPS22917 DS SLVSDW8B 9.3.3 Eq. 4 tFALL = 2.2 (R4 + QOD 150 Ohm) CL (+-15 % model correlation) | ✅ |
test_u2_qod_discharge[usb5.0] | VLED to 10 % after LED_PWR_EN low usb5.0 | 23.9 ms | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge' | ✅ |
test_u2_qod_discharge[usb5.0] | tFALL vs SLVSDW8B Eq. 4 usb5.0 | 22.8 ms | 19.9 ms … 26.9 ms | TPS22917 DS SLVSDW8B 9.3.3 Eq. 4 tFALL = 2.2 (R4 + QOD 150 Ohm) CL (+-15 % model correlation) | ✅ |
test_u2_qod_discharge_tolerance_extremes | VLED to 10 %, all-plus corner incl. DC bias, from 4.2 V (record) | 25.7 ms | – … – | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge'; C8/C9 CL21A226MAQNNNE +-20 %, C101..C148 CL05B104KO5NNNC +-10 %; Samsung DC-bias/TCC curves | ✅ |
test_u2_qod_discharge_tolerance_extremes | VLED to 10 %, worst corner incl. DC bias, from the 3.465 V firmware floor | 26.6 ms | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge'; C8/C9 CL21A226MAQNNNE +-20 %, C101..C148 CL05B104KO5NNNC +-10 %; Samsung DC-bias/TCC curves | ✅ |
test_fault_qod_resistor_wrong_value | FAULT DETECTED: VLED to 10 % with R4 = 1k | infs | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge' | ❌ |
test_on_pins_vs_gpio_levels[bat3.0] | U2 ON driven high bat3.0 | 2.93 V | 1 V … 5.5 V | TPS22917 DS SLVSDW8B Table 7.3 VIH 1.0..5.5 V; nRF52840 PS v1.1 6.9.3.1 VOH (IOH,SD min) | ✅ |
test_on_pins_vs_gpio_levels[bat3.0] | U2 ON driven low bat3.0 | -3.98 µV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V | ✅ |
test_on_pins_vs_gpio_levels[bat3.0] | U2 ON in MCU reset (+1 uA leak, ASSUMED) bat3.0 | 87.4 mV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V; R3/R25 pull-down; nRF pad leakage not specified -> 1 uA assumed | ✅ |
test_on_pins_vs_gpio_levels[bat3.0] | U21 ON driven high bat3.0 | 2.93 V | 1 V … 5.5 V | TPS22917 DS SLVSDW8B Table 7.3 VIH 1.0..5.5 V; nRF52840 PS v1.1 6.9.3.1 VOH (IOH,SD min) | ✅ |
test_on_pins_vs_gpio_levels[bat3.0] | U21 ON driven low bat3.0 | -3.98 µV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V | ✅ |
test_on_pins_vs_gpio_levels[bat3.0] | U21 ON in MCU reset (+1 uA leak, ASSUMED) bat3.0 | 87.4 mV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V; R3/R25 pull-down; nRF pad leakage not specified -> 1 uA assumed | ✅ |
test_on_pins_vs_gpio_levels[bat4.2] | U2 ON driven high bat4.2 | 3.29 V | 1 V … 5.5 V | TPS22917 DS SLVSDW8B Table 7.3 VIH 1.0..5.5 V; nRF52840 PS v1.1 6.9.3.1 VOH (IOH,SD min) | ✅ |
test_on_pins_vs_gpio_levels[bat4.2] | U2 ON driven low bat4.2 | -3.98 µV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V | ✅ |
test_on_pins_vs_gpio_levels[bat4.2] | U2 ON in MCU reset (+1 uA leak, ASSUMED) bat4.2 | 87.4 mV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V; R3/R25 pull-down; nRF pad leakage not specified -> 1 uA assumed | ✅ |
test_on_pins_vs_gpio_levels[bat4.2] | U21 ON driven high bat4.2 | 3.29 V | 1 V … 5.5 V | TPS22917 DS SLVSDW8B Table 7.3 VIH 1.0..5.5 V; nRF52840 PS v1.1 6.9.3.1 VOH (IOH,SD min) | ✅ |
test_on_pins_vs_gpio_levels[bat4.2] | U21 ON driven low bat4.2 | -3.98 µV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V | ✅ |
test_on_pins_vs_gpio_levels[bat4.2] | U21 ON in MCU reset (+1 uA leak, ASSUMED) bat4.2 | 87.4 mV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max 0.35 V; R3/R25 pull-down; nRF pad leakage not specified -> 1 uA assumed | ✅ |
test_mcu_reset_turns_both_rails_off | U2 ON after MCU reset (100 nA leak, ASSUMED) | 7.94 mV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max | ✅ |
test_mcu_reset_turns_both_rails_off | U21 ON after MCU reset (100 nA leak, ASSUMED) | 7.94 mV | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max | ✅ |
test_mcu_reset_turns_both_rails_off | VLED to 10 % after MCU reset | 23.9 ms | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge' | ✅ |
test_mcu_reset_turns_both_rails_off | OLED_VIN at the end of the window after MCU reset (boost EN = VIN) | 844 µV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V; TPS22917 DS SLVSDW8B Table 9-2 ON=L + QOD: VOUT = GND | ✅ |
test_mcu_reset_turns_both_rails_off | OLED_VIN below EN VIL after MCU reset (record, QOD only, U20 not drawing) | 1.61 ms | – … – | informational: C38 + U21 QOD; OLED_VIN before reset 4.184 V | ✅ |
test_fault_on_pulldown_missing_in_reset | FAULT DETECTED: U2 ON after MCU reset with R3 missing | 3.71 V | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max | ❌ |
test_fault_on_pulldown_missing_in_reset | FAULT DETECTED: VLED to 10 % after reset with R3 missing | infs | – … 30 ms | docs/architecture.md 7: 'allow >= 30 ms for the QOD discharge' | ❌ |
test_fault_oled_on_pulldown_missing_in_reset | FAULT DETECTED: U21 ON after MCU reset with R25 missing | 3.71 V | – … 350 mV | TPS22917 DS SLVSDW8B Table 7.3 VIL max | ❌ |
test_fault_oled_on_pulldown_missing_in_reset | FAULT DETECTED: OLED_VIN after MCU reset with R25 missing (boost EN = VIN) | 4.18 V | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V | ❌ |
test_phantom_vled_and_din_current[bat4.2-25] | phantom VLED (P0.06 high, U2 off) bat4.2 25C | 1.17 V | – … 3.3 V | WS2812C-2020-V6 DS p.2 VDD 3.3 V min (ring must not be phantom-powered into operation) | ✅ |
test_phantom_vled_and_din_current[bat4.2-25] | DIN clamp current (record) bat4.2 25C | 5.51 mA | – … – | informational: (V(P0.06) - V(LED_DIN_R))/R40 - V(LED_DIN_R)/R41 | ✅ |
test_phantom_vled_and_din_current[bat3.0--10] | phantom VLED (P0.06 high, U2 off) bat3.0 -10C | 982 mV | – … 3.3 V | WS2812C-2020-V6 DS p.2 VDD 3.3 V min (ring must not be phantom-powered into operation) | ✅ |
test_phantom_vled_and_din_current[bat3.0--10] | DIN clamp current (record) bat3.0 -10C | 4.59 mA | – … – | informational: (V(P0.06) - V(LED_DIN_R))/R40 - V(LED_DIN_R)/R41 | ✅ |
test_phantom_vled_and_din_current[usb5.0-60] | phantom VLED (P0.06 high, U2 off) usb5.0 60C | 1.19 V | – … 3.3 V | WS2812C-2020-V6 DS p.2 VDD 3.3 V min (ring must not be phantom-powered into operation) | ✅ |
test_phantom_vled_and_din_current[usb5.0-60] | DIN clamp current (record) usb5.0 60C | 5.63 mA | – … – | informational: (V(P0.06) - V(LED_DIN_R))/R40 - V(LED_DIN_R)/R41 | ✅ |
test_phantom_din_abs_max[bat4.2-25] | DIN - VDD with P0.06 high, VLED off bat4.2 25C | 758 mV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14) | ❌ |
test_phantom_din_abs_max[bat3.0--10] | DIN - VDD with P0.06 high, VLED off bat3.0 -10C | 801 mV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14) | ❌ |
test_phantom_din_abs_max_with_fw_rule[bat4.2-25] | DIN - VDD with P0.06 LOW (rule LSW-3), VLED off bat4.2 25C | -794 pV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14); firmware rule LSW-3 (docs/firmware.md 6.4, SPEC 5.4): P0.06 never high while VLED is off | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat4.2-25] | VLED when P0.06 first goes high, 10 ms after LED_PWR_EN bat4.2 25C | 4.18 V | 2.67 V … – | docs/firmware.md 6.4 / SPEC 5.4: VLED >= 2.67 V before the first LED frame (LED-DATA-V4, R9; was 2.5 V) | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat4.2-25] | +3V3 max - VLED at the first LED frame, 10 ms after LED_PWR_EN bat4.2 25C | -818 mV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14); DIN high = +3V3 up to 3.3 V +2 % (RT9080 DS9080-09); LED-DATA-V4 (R9) | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat4.2-25] | VLED 35 ms after LED_PWR_EN low (record) bat4.2 25C | 143 mV | – … – | informational: QOD discharge after the documented off order | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat4.2-25] | max(DIN - VDD) over the documented on/off sequence bat4.2 25C | -794 pV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14); firmware rule LSW-3 (docs/firmware.md 6.4, SPEC 5.4) + LED-DATA-V4: P0.06 low >= 10 ms after LED_PWR_EN high; all-zero frame, P0.06 low, then LED_PWR_EN low | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat3.0--10] | DIN - VDD with P0.06 LOW (rule LSW-3), VLED off bat3.0 -10C | -553 pV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14); firmware rule LSW-3 (docs/firmware.md 6.4, SPEC 5.4): P0.06 never high while VLED is off | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat3.0--10] | VLED when P0.06 first goes high, 10 ms after LED_PWR_EN bat3.0 -10C | 2.97 V | 2.67 V … – | docs/firmware.md 6.4 / SPEC 5.4: VLED >= 2.67 V before the first LED frame (LED-DATA-V4, R9; was 2.5 V) | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat3.0--10] | +3V3 max - VLED at the first LED frame, 10 ms after LED_PWR_EN bat3.0 -10C | 394 mV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14); DIN high = +3V3 up to 3.3 V +2 % (RT9080 DS9080-09); LED-DATA-V4 (R9) | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat3.0--10] | VLED 35 ms after LED_PWR_EN low (record) bat3.0 -10C | 104 mV | – … – | informational: QOD discharge after the documented off order | ✅ |
test_phantom_din_abs_max_with_fw_rule[bat3.0--10] | max(DIN - VDD) over the documented on/off sequence bat3.0 -10C | -553 pV | – … 700 mV | WS2812C-2020-V6 DS p.2 abs max VI <= VDD + 0.7 V (clamp I-V ASSUMED generic Si, IS 1e-14); firmware rule LSW-3 (docs/firmware.md 6.4, SPEC 5.4) + LED-DATA-V4: P0.06 low >= 10 ms after LED_PWR_EN high; all-zero frame, P0.06 low, then LED_PWR_EN low | ✅ |
test_phantom_normal_off_state | VLED off (ISD max leaking into VOUT) | 21.2 µV | – … 420 mV | TPS22917 DS SLVSDW8B Table 9-2 ON=L + QOD: VOUT = GND; Table 7.5 ISD 100 nA max; 10 % = tFALL end point | ✅ |
test_phantom_normal_off_state | LED_DIN with P0.06 low | 147 pV | – … 700 mV | WS2812C-2020-V6 DS p.3 VIL max 0.7 V | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | U21 tON (ON -> OLED_VIN 90 %) bat3.0 25C | 3.84 ms | – … 10 ms | docs/firmware.md 3.1 / 7.2 step 23: VCC-to-AFh wait 200 ms, never below 10 ms; its first 10 ms cover U21's tON and the boost soft start (OLED-V2) | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | U21 tR vs Table 7.6 x C37 bat3.0 25C | 1.5 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C37 (+-20 %, VIN 3.6 V row) | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | U21 inrush peak (boost soft start) bat3.0 25C | 390 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | U21 energy during the ramp (record) bat3.0 25C | 211 µJ | – … – | informational: no SOA / transient thermal data in SLVSDW8B | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | battery current peak, OLED on bat3.0 25C | 428 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | +3V3 min during U21 turn-on bat3.0 25C | 2.82 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u21_turn_on_with_boost_start[bat3.0-25] | OLED_VIN within TPS61040 VIN range after the ramp bat3.0 25C | 2.98 V | 1.8 V … 6 V | TPS61040 DS SLVS413L Table 5.3 VIN 1.8..6 V | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | U21 tON (ON -> OLED_VIN 90 %) bat3.7 25C | 3.92 ms | – … 10 ms | docs/firmware.md 3.1 / 7.2 step 23: VCC-to-AFh wait 200 ms, never below 10 ms; its first 10 ms cover U21's tON and the boost soft start (OLED-V2) | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | U21 tR vs Table 7.6 x C37 bat3.7 25C | 1.56 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C37 (+-20 %, VIN 3.6 V row) | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | U21 inrush peak (boost soft start) bat3.7 25C | 393 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | U21 energy during the ramp (record) bat3.7 25C | 387 µJ | – … – | informational: no SOA / transient thermal data in SLVSDW8B | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | battery current peak, OLED on bat3.7 25C | 431 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | +3V3 min during U21 turn-on bat3.7 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | +3V3 min vs POFWARN, OLED on bat3.7 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u21_turn_on_with_boost_start[bat3.7-25] | OLED_VIN within TPS61040 VIN range after the ramp bat3.7 25C | 3.68 V | 1.8 V … 6 V | TPS61040 DS SLVS413L Table 5.3 VIN 1.8..6 V | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | U21 tON (ON -> OLED_VIN 90 %) bat4.2 25C | 4 ms | – … 10 ms | docs/firmware.md 3.1 / 7.2 step 23: VCC-to-AFh wait 200 ms, never below 10 ms; its first 10 ms cover U21's tON and the boost soft start (OLED-V2) | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | U21 tR vs Table 7.6 x C37 bat4.2 25C | 1.66 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C37 (+-20 %, VIN 3.6 V row) | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | U21 inrush peak (boost soft start) bat4.2 25C | 395 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | U21 energy during the ramp (record) bat4.2 25C | 548 µJ | – … – | informational: no SOA / transient thermal data in SLVSDW8B | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | battery current peak, OLED on bat4.2 25C | 432 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | +3V3 min during U21 turn-on bat4.2 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | +3V3 min vs POFWARN, OLED on bat4.2 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u21_turn_on_with_boost_start[bat4.2-25] | OLED_VIN within TPS61040 VIN range after the ramp bat4.2 25C | 4.18 V | 1.8 V … 6 V | TPS61040 DS SLVS413L Table 5.3 VIN 1.8..6 V | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | U21 tON (ON -> OLED_VIN 90 %) usb4.5 25C | 4.05 ms | – … 10 ms | docs/firmware.md 3.1 / 7.2 step 23: VCC-to-AFh wait 200 ms, never below 10 ms; its first 10 ms cover U21's tON and the boost soft start (OLED-V2) | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | U21 tR vs Table 7.6 x C37 usb4.5 25C | 1.71 ms | 1.44 ms … 2.16 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.8 us/pF x C37 (+-20 %, VIN 5.0 V row) | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | U21 inrush peak (boost soft start) usb4.5 25C | 396 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | U21 energy during the ramp (record) usb4.5 25C | 660 µJ | – … – | informational: no SOA / transient thermal data in SLVSDW8B | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | +3V3 min during U21 turn-on usb4.5 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | +3V3 min vs POFWARN, OLED on usb4.5 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u21_turn_on_with_boost_start[usb4.5-25] | OLED_VIN within TPS61040 VIN range after the ramp usb4.5 25C | 4.48 V | 1.8 V … 6 V | TPS61040 DS SLVS413L Table 5.3 VIN 1.8..6 V | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | U21 tON (ON -> OLED_VIN 90 %) usb5.5 25C | 4.05 ms | – … 10 ms | docs/firmware.md 3.1 / 7.2 step 23: VCC-to-AFh wait 200 ms, never below 10 ms; its first 10 ms cover U21's tON and the boost soft start (OLED-V2) | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | U21 tR vs Table 7.6 x C37 usb5.5 25C | 1.71 ms | 1.44 ms … 2.16 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.8 us/pF x C37 (+-20 %, VIN 5.0 V row) | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | U21 inrush peak (boost soft start) usb5.5 25C | 396 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | U21 energy during the ramp (record) usb5.5 25C | 661 µJ | – … – | informational: no SOA / transient thermal data in SLVSDW8B | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | +3V3 min during U21 turn-on usb5.5 25C | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | +3V3 min vs POFWARN, OLED on usb5.5 25C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 % (firmware envelope VBAT >= 3.465 V) | ✅ |
test_u21_turn_on_with_boost_start[usb5.5-25] | OLED_VIN within TPS61040 VIN range after the ramp usb5.5 25C | 4.49 V | 1.8 V … 6 V | TPS61040 DS SLVS413L Table 5.3 VIN 1.8..6 V | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | U21 tON (ON -> OLED_VIN 90 %) bat3.0 -10C | 3.82 ms | – … 10 ms | docs/firmware.md 3.1 / 7.2 step 23: VCC-to-AFh wait 200 ms, never below 10 ms; its first 10 ms cover U21's tON and the boost soft start (OLED-V2) | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | U21 tR vs Table 7.6 x C37 bat3.0 -10C | 1.48 ms | 1.28 ms … 1.92 ms | TPS22917 DS SLVSDW8B Table 7.6 tR 1.6 us/pF x C37 (+-20 %, VIN 3.6 V row) | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | U21 inrush peak (boost soft start) bat3.0 -10C | 391 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | U21 energy during the ramp (record) bat3.0 -10C | 187 µJ | – … – | informational: no SOA / transient thermal data in SLVSDW8B | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | battery current peak, OLED on bat3.0 -10C | 420 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A setting | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | +3V3 min during U21 turn-on bat3.0 -10C | 2.72 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout 0.53 V @ 0.6 A | ✅ |
test_u21_turn_on_with_boost_start[bat3.0--10] | OLED_VIN within TPS61040 VIN range after the ramp bat3.0 -10C | 2.97 V | 1.8 V … 6 V | TPS61040 DS SLVS413L Table 5.3 VIN 1.8..6 V | ✅ |
test_u21_turn_on_dead_battery_usb_100ma | VSYS min, OLED on, dead battery, USB ILIM 100 mA (record) | 1.46 V | – … – | BQ25180 DS SLUSE99C Table 8-17 ILIM 100 mA (max.), 8.3.3 no supplement below VBUVLO | ✅ |
test_u21_turn_on_dead_battery_usb_100ma | +3V3 min, OLED on, dead battery, USB ILIM 100 mA | 1.42 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; OLD rule: docs/firmware.md 13.3 allowed the OLED on at C7 <= 04h at ILIM 100 mA (superseded by NEW-1 / OLED-V1) | ❌ |
test_u21_turn_on_dead_battery_usb_500ma | +3V3 min, OLED on, dead battery, USB ILIM 500 mA code (450 mA min) | 3.3 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; BQ25180 ILIM 450 mA min; RT9080 DS9080-09 dropout | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | OLED_VIN max, U21 held off (boost EN = VIN), OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V | 650 pV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | VSYS min, OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V (record) | 3.27 V | – … – | BQ25180 DS SLUSE99C ILIM 100 mA code, 8.3.3 no supplement below VBUVLO; U2 inrush peak 150 mA | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | +3V3 min - POFWARN limit, OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V (record) | 177 mV | – … – | informational: below 0 only inside the POF blanking after LED_PWR_EN (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | +3V3 min, OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V | 3.22 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | +3V3 min vs flash VCC min, OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V | 3.22 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | time +3V3 is last below the POF limit after LED_PWR_EN rises, OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V (record) | 0.0s | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM100-SYSREG4.5] | +3V3 min after the 10 ms POF blanking (LED_PWR_EN), OLED off + LED cue, dead battery, USB ILIM 100 mA, SYS_REG 4.500 V | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | OLED_VIN max, U21 held off (boost EN = VIN), OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V | 623 pV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | VSYS min, OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V (record) | 2.91 V | – … – | BQ25180 DS SLUSE99C ILIM 100 mA code, 8.3.3 no supplement below VBUVLO; U2 inrush peak 153 mA | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | +3V3 min - POFWARN limit, OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V (record) | -178 mV | – … – | informational: below 0 only inside the POF blanking after LED_PWR_EN (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | +3V3 min, OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V | 2.87 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | +3V3 min vs flash VCC min, OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V | 2.87 V | 2.7 V … – | W25Q128JV VCC min 2.7 V; RT9080 DS9080-09 dropout; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | time +3V3 is last below the POF limit after LED_PWR_EN rises, OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V (record) | 5.82 ms | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_u21_turn_on_dead_battery_usb_100ma_with_fw_rule[ILIM80min-SYSREG4.4-2pct] | +3V3 min after the 10 ms POF blanking (LED_PWR_EN), OLED off + LED cue, dead battery, USB ILIM 80 mA, SYS_REG 4.312 V | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | VSYS min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C (record) | 3.06 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VBSUP1 supplement | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | time BAT pin < BUVLO, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C (record) | 0s | – … – | informational: BQ25180 DS SLUSE99C 7.6 tBUVLO 60 us deglitch | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | +3V3 min - POFWARN limit, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C (record) | -28 mV | – … – | informational: below 0 only inside the POF blanking after OLED_VCC_EN (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | +3V3 min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C | 3.02 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | BQ25180 BAT pin min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C | 3.13 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us, 8.3.3 no supplement below VBUVLO; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C (record) | 4.2 ms | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM100] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, 25 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | VSYS min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C (record) | 3.05 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VBSUP1 supplement | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | time BAT pin < BUVLO, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C (record) | 0s | – … – | informational: BQ25180 DS SLUSE99C 7.6 tBUVLO 60 us deglitch | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | +3V3 min - POFWARN limit, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C (record) | -36.6 mV | – … – | informational: below 0 only inside the POF blanking after OLED_VCC_EN (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | +3V3 min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C | 3.01 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | BQ25180 BAT pin min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C | 3.12 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us, 8.3.3 no supplement below VBUVLO; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C (record) | 4.43 ms | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[25C-ILIM80min] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, 25 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | VSYS min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C (record) | 2.99 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VBSUP1 supplement | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | time BAT pin < BUVLO, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C (record) | 0s | – … – | informational: BQ25180 DS SLUSE99C 7.6 tBUVLO 60 us deglitch | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | +3V3 min - POFWARN limit, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C (record) | -98.6 mV | – … – | informational: below 0 only inside the POF blanking after OLED_VCC_EN (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | +3V3 min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C | 2.95 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | BQ25180 BAT pin min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C | 3.05 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us, 8.3.3 no supplement below VBUVLO; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C (record) | 4.67 ms | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM100] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 100 mA, -10 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | VSYS min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C (record) | 2.98 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VBSUP1 supplement | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | time BAT pin < BUVLO, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C (record) | 0s | – … – | informational: BQ25180 DS SLUSE99C 7.6 tBUVLO 60 us deglitch | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | +3V3 min - POFWARN limit, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C (record) | -113 mV | – … – | informational: below 0 only inside the POF blanking after OLED_VCC_EN (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | +3V3 min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C | 2.93 V | 1.57 V … – | nRF52840 PS v1.1 5.3 VBOR,ON min 1.57 V; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | BQ25180 BAT pin min, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C | 3.04 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us, 8.3.3 no supplement below VBUVLO; firmware rule NEW-1 / OLED-V1 (docs/firmware.md 7.2 / 13.3, SPEC 5.3): OLED_VCC_EN never at TMR_ILIM 0xC9 unless the battery can supplement (no BUVLO_STAT, VBAT_est >= 3.21 V true cell, VBAT_est = 0.979 x reading); until ILIM is 500 mA the LEDs show the <= 20 mA charging cue | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C (record) | 4.68 ms | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_u21_turn_on_usb_100ma_supplement_with_fw_rule[-10C-ILIM80min] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), OLED on, VBAT_est 3.21 V (reading 3.2789 V, cell 3.210 V) supplementing, USB ILIM 80 mA, -10 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21--10] | BQ25180 BAT pin min, U21 turn-on at VBAT 3.465 V rested, -10 C | 3.25 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us; docs/firmware.md 12.4 SHIP at VBAT_est < 3.465 V (reading < 3.5393 V, VBAT_est = 0.979 x reading, VSENSE-1/4/5, R1') | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21--10] | +3V3 min - POFWARN limit, U21 turn-on at VBAT 3.465 V rested, -10 C (record) | 135 mV | – … – | informational: below 0 only inside the POF blanking (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21--10] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, U21 turn-on at VBAT 3.465 V rested, -10 C (record) | 0.0s | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21--10] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), U21 turn-on at VBAT 3.465 V rested, -10 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21-25] | BQ25180 BAT pin min, U21 turn-on at VBAT 3.465 V rested, 25 C | 3.36 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us; docs/firmware.md 12.4 SHIP at VBAT_est < 3.465 V (reading < 3.5393 V, VBAT_est = 0.979 x reading, VSENSE-1/4/5, R1') | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21-25] | +3V3 min - POFWARN limit, U21 turn-on at VBAT 3.465 V rested, 25 C (record) | 239 mV | – … – | informational: below 0 only inside the POF blanking (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21-25] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, U21 turn-on at VBAT 3.465 V rested, 25 C (record) | 0.0s | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21-25] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), U21 turn-on at VBAT 3.465 V rested, 25 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U2--10] | BQ25180 BAT pin min, U2 turn-on at VBAT 3.465 V rested, -10 C | 3.4 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us; docs/firmware.md 12.4 SHIP at VBAT_est < 3.465 V (reading < 3.5393 V, VBAT_est = 0.979 x reading, VSENSE-1/4/5, R1') | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U2--10] | +3V3 min - POFWARN limit, U2 turn-on at VBAT 3.465 V rested, -10 C (record) | 255 mV | – … – | informational: below 0 only inside the POF blanking (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U2--10] | time +3V3 is last below the POF limit after LED_PWR_EN rises, U2 turn-on at VBAT 3.465 V rested, -10 C (record) | 0.0s | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U2--10] | +3V3 min after the 10 ms POF blanking (LED_PWR_EN), U2 turn-on at VBAT 3.465 V rested, -10 C | 3.3 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21+motor--10] | BQ25180 BAT pin min, U21+motor turn-on at VBAT 3.465 V rested, -10 C | 3.04 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (CHARGECTRL1 0x92), 7.6 tBUVLO 60 us; docs/firmware.md 12.4 SHIP at VBAT_est < 3.465 V (reading < 3.5393 V, VBAT_est = 0.979 x reading, VSENSE-1/4/5, R1'); docs/architecture.md 7 VM 0.42 A | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21+motor--10] | +3V3 min - POFWARN limit, U21+motor turn-on at VBAT 3.465 V rested, -10 C (record) | -103 mV | – … – | informational: below 0 only inside the POF blanking (firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises), checked below | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21+motor--10] | time +3V3 is last below the POF limit after OLED_VCC_EN rises, U21+motor turn-on at VBAT 3.465 V rested, -10 C (record) | 4.91 ms | – … – | informational: POF limit 3.045 V; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises (first proposed as 5 ms; the worst guard case, the ILIM 80 mA min dead-battery cue, needs 5.82 ms) | ✅ |
test_bat_pin_vs_buvlo_at_firmware_floor[U21+motor--10] | +3V3 min after the 10 ms POF blanking (OLED_VCC_EN), U21+motor turn-on at VBAT 3.465 V rested, -10 C | 3.15 V | 3.04 V … – | docs/firmware.md POFWARN 2.9 V + nRF52840 PS VPOFTOL 5 %; firmware POF blanking (docs/firmware.md 12.4, R8): POFWARN ignored for 10 ms after OLED_VCC_EN or LED_PWR_EN rises | ✅ |
test_u21_off_leakage_alone_keeps_boost_off | OLED_VIN, U21 off, ISD max, no panel path, 60 C | 14.5 µV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN) / TPS22917 DS SLVSDW8B Table 7.5 ISD 100 nA max | ✅ |
test_u21_off_backpower_via_panel_and_d21[-10-generic ESD] | +13V_OLED held by the panel ESD path (record) -10C generic ESD | 2.71 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[-10-generic ESD] | FB - OLED_VIN with OLED off -10C generic ESD | 257 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[-10-generic ESD] | OLED_VIN with OLED off (boost EN = VIN) -10C generic ESD | 51.9 µV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-generic ESD] | +13V_OLED held by the panel ESD path (record) 25C generic ESD | 2.78 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-generic ESD] | FB - OLED_VIN with OLED off 25C generic ESD | 263 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-generic ESD] | OLED_VIN with OLED off (boost EN = VIN) 25C generic ESD | 670 µV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-generic ESD] | +13V_OLED held by the panel ESD path (record) 60C generic ESD | 2.81 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-generic ESD] | FB - OLED_VIN with OLED off 60C generic ESD | 262 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-generic ESD] | OLED_VIN with OLED off (boost EN = VIN) 60C generic ESD | 5.28 mV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-strong ESD IS 1e-11] | +13V_OLED held by the panel ESD path (record) 25C strong ESD IS 1e-11 | 2.95 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-strong ESD IS 1e-11] | FB - OLED_VIN with OLED off 25C strong ESD IS 1e-11 | 280 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-strong ESD IS 1e-11] | OLED_VIN with OLED off (boost EN = VIN) 25C strong ESD IS 1e-11 | 680 µV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-strong ESD IS 1e-11] | +13V_OLED held by the panel ESD path (record) 60C strong ESD IS 1e-11 | 3.01 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-strong ESD IS 1e-11] | FB - OLED_VIN with OLED off 60C strong ESD IS 1e-11 | 280 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-strong ESD IS 1e-11] | OLED_VIN with OLED off (boost EN = VIN) 60C strong ESD IS 1e-11 | 5.37 mV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-very strong ESD IS 1e-9] | +13V_OLED held by the panel ESD path (record) 25C very strong ESD IS 1e-9 | 3.07 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-very strong ESD IS 1e-9] | FB - OLED_VIN with OLED off 25C very strong ESD IS 1e-9 | 291 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[25-very strong ESD IS 1e-9] | OLED_VIN with OLED off (boost EN = VIN) 25C very strong ESD IS 1e-9 | 687 µV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-very strong ESD IS 1e-9] | +13V_OLED held by the panel ESD path (record) 60C very strong ESD IS 1e-9 | 3.14 V | – … – | SSD1351 Rev 1.3 8.9 Note (1) | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-very strong ESD IS 1e-9] | FB - OLED_VIN with OLED off 60C very strong ESD IS 1e-9 | 293 mV | – … 300 mV | TPS61040 DS SLVS413L Table 5.1 abs max FB <= VIN + 0.3 V | ✅ |
test_u21_off_backpower_via_panel_and_d21[60-very strong ESD IS 1e-9] | OLED_VIN with OLED off (boost EN = VIN) 60C very strong ESD IS 1e-9 | 5.43 mV | – … 400 mV | TPS61040 DS SLVS413L Table 5.5 EN VIL max 0.4 V (EN tied to VIN): boost guaranteed off | ✅ |
test_u2_full_white_thermal[usb5.0-4.59] | U2 current, full white usb5.0 | 720 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_full_white_thermal[usb5.0-4.59] | U2 TJ at 60 C ambient, full white usb5.0 | 73.3 C | – … 125 C | TPS22917 DS SLVSDW8B Table 7.1 TJ max 125 C; Table 7.4 theta-JA 183 C/W; Table 7.5 RON max 85 C row | ✅ |
test_u2_full_white_thermal[usb5.0-4.59] | VLED max, no load (VSYS_REG +2 %) usb5.0 | 4.58 V | – … 5.3 V | WS2812C-2020-V6 DS p.2 VDD 5.3 V max; BQ25180 DS SLUSE99C VSYS_REG accuracy +2 % | ✅ |
test_u2_full_white_thermal[bat4.2-4.5] | U2 current, full white bat4.2 | 720 mA | – … 2 A | TPS22917 DS SLVSDW8B Table 7.1 IMAX 2 A | ✅ |
test_u2_full_white_thermal[bat4.2-4.5] | U2 TJ at 60 C ambient, full white bat4.2 | 72.8 C | – … 125 C | TPS22917 DS SLVSDW8B Table 7.1 TJ max 125 C; Table 7.4 theta-JA 183 C/W; Table 7.5 RON max 85 C row | ✅ |
test_u2_full_white_thermal[bat4.2-4.5] | VLED max, no load (VSYS_REG +2 %) bat4.2 | 4.19 V | – … 5.3 V | WS2812C-2020-V6 DS p.2 VDD 5.3 V max; BQ25180 DS SLUSE99C VSYS_REG accuracy +2 % | ✅ |
test_u2_full_white_thermal[bat4.2-4.5] | battery current, full white bat4.2 | 770 mA | – … 1.5 A | BQ25180 DS SLUSE99C IBAT_OCP 1.5 A | ✅ |
test_vled_at_firmware_led_floor[3.53-0.1-25] | VLED at VBAT_est 3.53 V (reading 3.6057 V, cell 3.530 V rested), 100 mA, 25 C | 3.47 V | 3.3 V … – | WS2812C-2020-V6 DS p.2 VDD 3.3 V min; docs/firmware.md 6.3 LED derating table on VBAT_est = 0.979 x reading, 12.4 (VSENSE-1/4/5, R1'); TPS22917 DS SLVSDW8B Table 7.5 RON max | ✅ |
test_vled_at_firmware_led_floor[3.53-0.1--10] | VLED at VBAT_est 3.53 V (reading 3.6057 V, cell 3.530 V rested), 100 mA, -10 C | 3.43 V | 3.3 V … – | WS2812C-2020-V6 DS p.2 VDD 3.3 V min; docs/firmware.md 6.3 LED derating table on VBAT_est = 0.979 x reading, 12.4 (VSENSE-1/4/5, R1'); TPS22917 DS SLVSDW8B Table 7.5 RON max | ✅ |
test_vled_at_firmware_led_floor[3.65-0.3--10] | VLED at VBAT_est 3.65 V (reading 3.7283 V, cell 3.650 V rested), 300 mA, -10 C | 3.42 V | 3.3 V … – | WS2812C-2020-V6 DS p.2 VDD 3.3 V min; docs/firmware.md 6.3 LED derating table on VBAT_est = 0.979 x reading, 12.4 (VSENSE-1/4/5, R1'); TPS22917 DS SLVSDW8B Table 7.5 RON max | ✅ |
test_vled_at_firmware_led_floor[3.6-0.3--10] | VLED at VBAT_est 3.6 V (reading 3.6772 V, cell 3.600 V rested), 300 mA, -10 C | 3.37 V | 3.3 V … – | WS2812C-2020-V6 DS p.2 VDD 3.3 V min; docs/firmware.md 6.3 LED derating table on VBAT_est = 0.979 x reading, 12.4 (VSENSE-1/4/5, R1'); TPS22917 DS SLVSDW8B Table 7.5 RON max | ✅ |
test_phantom_clamp_sensitivity | DIN - VDD, P0.06 high, VLED off, strong clamp IS 1e-13 RS 0 (record) | 644 mV | – … – | informational bracket for the xfail above; WS2812C-2020-V6 DS gives no clamp I-V | ✅ |
test_phantom_clamp_sensitivity | DIN - VDD, P0.06 high, VLED off, nominal IS 1e-14 RS 10 (record) | 758 mV | – … – | informational bracket for the xfail above; WS2812C-2020-V6 DS gives no clamp I-V | ✅ |
test_phantom_clamp_sensitivity | DIN - VDD, P0.06 high, VLED off, weak clamp IS 1e-15 RS 20 (record) | 866 mV | – … – | informational bracket for the xfail above; WS2812C-2020-V6 DS gives no clamp I-V | ✅ |
test_drv8837_model_matches_datasheet | rDS(on) HS+LS at 0.8 A, 25 C | 282 mOhm | 272 mOhm … 288 mOhm | DRV8837 DS SLVSBA4F Table 6.5 rDS(on) | ✅ |
test_drv8837_model_matches_datasheet | fwd: OUT1 = H | 5 V | 4.9 V … 5.01 V | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | fwd: OUT2 = L | 350 µV | -10 mV … 100 mV | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | rev: OUT1 = L | 350 µV | -10 mV … 100 mV | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | rev: OUT2 = H | 5 V | 4.9 V … 5.01 V | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | coast: OUT1 = Z | 2.5 V | 2.4 V … 2.6 V | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | coast: OUT2 = Z | 2.5 V | 2.4 V … 2.6 V | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | brake: OUT1 = L | 350 µV | -10 mV … 100 mV | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | brake: OUT2 = L | 350 µV | -10 mV … 100 mV | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | sleep: OUT1 = Z | 2.5 V | 2.4 V … 2.6 V | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_drv8837_model_matches_datasheet | sleep: OUT2 = Z | 2.5 V | 2.4 V … 2.6 V | DRV8837 DS SLVSBA4F Table 7-1 | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | coil terminal voltage (hold) | 3.86 V | – … 5 V | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): rated 3.3-5 V | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | DRV8837 OUT current (hold) | 248 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | DRV8837 OUT current vs OCP trip | 248 mA | – … 1.9 A | DRV8837 DS SLVSBA4F Table 6.5 IOCP min | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | DRV8837 TJ at 60 C ambient (hold) | 61.5 °C | – … 150 °C | DRV8837 DS SLVSBA4F Table 6.4 RθJA, 6.5 TTSD | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | link current per VSYS contact | 346 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | BQ25180 SYS current | 548 mA | – … 1.5 A | BQ25180 DS SLUSE99C Table 7.1 SYS DC | ✅ |
test_hold_current_vs_ratings[VBAT4.2] | battery discharge current (= SYS current on battery) | 548 mA | – … 1.5 A | BQ25180 DS SLUSE99C Table 7.5 IBAT_OCP 1.5 A setting | ✅ |
test_hold_current_vs_ratings[VBUS5.5] | coil terminal voltage (hold) | 4.47 V | – … 5 V | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): rated 3.3-5 V | ✅ |
test_hold_current_vs_ratings[VBUS5.5] | DRV8837 OUT current (hold) | 288 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_hold_current_vs_ratings[VBUS5.5] | DRV8837 OUT current vs OCP trip | 288 mA | – … 1.9 A | DRV8837 DS SLVSBA4F Table 6.5 IOCP min | ✅ |
test_hold_current_vs_ratings[VBUS5.5] | DRV8837 TJ at 60 C ambient (hold) | 62 °C | – … 150 °C | DRV8837 DS SLVSBA4F Table 6.4 RθJA, 6.5 TTSD | ✅ |
test_hold_current_vs_ratings[VBUS5.5] | link current per VSYS contact | 395 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_hold_current_vs_ratings[VBUS5.5] | BQ25180 SYS current | 627 mA | – … 1.5 A | BQ25180 DS SLUSE99C Table 7.1 SYS DC | ✅ |
test_hold_force_and_brownout[VBAT3.3--10] | I_coil / I_rated (VBAT3.3, -10 C) | 1.04 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.3--10] | thrust estimate (VBAT3.3, -10 C) | 812 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.3--10] | VSYS at the DRV under stroke load (VBAT3.3, -10 C) | 3.02 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.3--10] | BAT pin under stroke load (VBAT3.3, -10 C) | 3.09 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.3-25] | I_coil / I_rated (VBAT3.3, 25 C) | 933 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.3-25] | thrust estimate (VBAT3.3, 25 C) | 728 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.3-25] | VSYS at the DRV under stroke load (VBAT3.3, 25 C) | 3.13 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.3-25] | BAT pin under stroke load (VBAT3.3, 25 C) | 3.19 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.3-60] | I_coil / I_rated (VBAT3.3, 60 C) | 829 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.3-60] | thrust estimate (VBAT3.3, 60 C) | 647 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.3-60] | VSYS at the DRV under stroke load (VBAT3.3, 60 C) | 3.16 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.3-60] | BAT pin under stroke load (VBAT3.3, 60 C) | 3.22 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.4--10] | I_coil / I_rated (VBAT3.4, -10 C) | 1.07 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.4--10] | thrust estimate (VBAT3.4, -10 C) | 837 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.4--10] | VSYS at the DRV under stroke load (VBAT3.4, -10 C) | 3.11 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.4--10] | BAT pin under stroke load (VBAT3.4, -10 C) | 3.18 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.4-25] | I_coil / I_rated (VBAT3.4, 25 C) | 962 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.4-25] | thrust estimate (VBAT3.4, 25 C) | 750 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.4-25] | VSYS at the DRV under stroke load (VBAT3.4, 25 C) | 3.23 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.4-25] | BAT pin under stroke load (VBAT3.4, 25 C) | 3.29 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.4-60] | I_coil / I_rated (VBAT3.4, 60 C) | 855 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.4-60] | thrust estimate (VBAT3.4, 60 C) | 667 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.4-60] | VSYS at the DRV under stroke load (VBAT3.4, 60 C) | 3.26 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.4-60] | BAT pin under stroke load (VBAT3.4, 60 C) | 3.32 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.7--10] | I_coil / I_rated (VBAT3.7, -10 C) | 1.17 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.7--10] | thrust estimate (VBAT3.7, -10 C) | 913 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.7--10] | VSYS at the DRV under stroke load (VBAT3.7, -10 C) | 3.39 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.7--10] | BAT pin under stroke load (VBAT3.7, -10 C) | 3.47 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.7-25] | I_coil / I_rated (VBAT3.7, 25 C) | 1.05 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.7-25] | thrust estimate (VBAT3.7, 25 C) | 817 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.7-25] | VSYS at the DRV under stroke load (VBAT3.7, 25 C) | 3.52 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.7-25] | BAT pin under stroke load (VBAT3.7, 25 C) | 3.58 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT3.7-60] | I_coil / I_rated (VBAT3.7, 60 C) | 931 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT3.7-60] | thrust estimate (VBAT3.7, 60 C) | 726 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT3.7-60] | VSYS at the DRV under stroke load (VBAT3.7, 60 C) | 3.55 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT3.7-60] | BAT pin under stroke load (VBAT3.7, 60 C) | 3.62 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT4.2--10] | I_coil / I_rated (VBAT4.2, -10 C) | 1.33 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT4.2--10] | thrust estimate (VBAT4.2, -10 C) | 1.04 N | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT4.2--10] | VSYS at the DRV under stroke load (VBAT4.2, -10 C) | 3.86 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT4.2--10] | BAT pin under stroke load (VBAT4.2, -10 C) | 3.94 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT4.2-25] | I_coil / I_rated (VBAT4.2, 25 C) | 1.19 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT4.2-25] | thrust estimate (VBAT4.2, 25 C) | 930 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT4.2-25] | VSYS at the DRV under stroke load (VBAT4.2, 25 C) | 4 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT4.2-25] | BAT pin under stroke load (VBAT4.2, 25 C) | 4.07 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBAT4.2-60] | I_coil / I_rated (VBAT4.2, 60 C) | 1.06 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBAT4.2-60] | thrust estimate (VBAT4.2, 60 C) | 826 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBAT4.2-60] | VSYS at the DRV under stroke load (VBAT4.2, 60 C) | 4.04 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBAT4.2-60] | BAT pin under stroke load (VBAT4.2, 60 C) | 4.11 V | 3 V … – | BQ25180 DS SLUSE99C Table 7.5 VBUVLO (b000) - no brown-out | ✅ |
test_hold_force_and_brownout[VBUS4.5--10] | I_coil / I_rated (VBUS4.5, -10 C) | 1.23 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS4.5--10] | thrust estimate (VBUS4.5, -10 C) | 956 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS4.5--10] | VSYS at the DRV under stroke load (VBUS4.5, -10 C) | 3.55 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS4.5-25] | I_coil / I_rated (VBUS4.5, 25 C) | 1.07 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS4.5-25] | thrust estimate (VBUS4.5, 25 C) | 837 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS4.5-25] | VSYS at the DRV under stroke load (VBUS4.5, 25 C) | 3.6 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS4.5-60] | I_coil / I_rated (VBUS4.5, 60 C) | 949 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS4.5-60] | thrust estimate (VBUS4.5, 60 C) | 741 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS4.5-60] | VSYS at the DRV under stroke load (VBUS4.5, 60 C) | 3.62 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS5.0--10] | I_coil / I_rated (VBUS5.0, -10 C) | 1.23 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS5.0--10] | thrust estimate (VBUS5.0, -10 C) | 956 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS5.0--10] | VSYS at the DRV under stroke load (VBUS5.0, -10 C) | 3.55 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS5.0-25] | I_coil / I_rated (VBUS5.0, 25 C) | 1.07 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS5.0-25] | thrust estimate (VBUS5.0, 25 C) | 837 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS5.0-25] | VSYS at the DRV under stroke load (VBUS5.0, 25 C) | 3.6 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS5.0-60] | I_coil / I_rated (VBUS5.0, 60 C) | 949 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS5.0-60] | thrust estimate (VBUS5.0, 60 C) | 741 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS5.0-60] | VSYS at the DRV under stroke load (VBUS5.0, 60 C) | 3.62 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS5.5--10] | I_coil / I_rated (VBUS5.5, -10 C) | 1.23 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS5.5--10] | thrust estimate (VBUS5.5, -10 C) | 956 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS5.5--10] | VSYS at the DRV under stroke load (VBUS5.5, -10 C) | 3.55 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS5.5-25] | I_coil / I_rated (VBUS5.5, 25 C) | 1.07 | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS5.5-25] | thrust estimate (VBUS5.5, 25 C) | 837 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS5.5-25] | VSYS at the DRV under stroke load (VBUS5.5, 25 C) | 3.6 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_hold_force_and_brownout[VBUS5.5-60] | I_coil / I_rated (VBUS5.5, 60 C) | 949 m | – … – | info: I_rated = 3.3 V / 20 Ohm = 165 mA (detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS)) | ✅ |
test_hold_force_and_brownout[VBUS5.5-60] | thrust estimate (VBUS5.5, 60 C) | 741 mN | 500 mN … – | detent research: load <= 0.5 N for the 8 mm motor; F = 0.78 N x I/I_rated | ✅ |
test_hold_force_and_brownout[VBUS5.5-60] | VSYS at the DRV under stroke load (VBUS5.5, 60 C) | 3.62 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_required_current_at_firmware_move_threshold | idle VSYS needed for I_rated under stroke load, 25 C | 3.53 V | – … – | info: interpolated from the simulated 3.4 / 3.7 V operating points | ✅ |
test_required_current_at_firmware_move_threshold | BAT pin under stroke load at VSYS idle 3.40 V, 25 C | 3.29 V | – … – | info: detent research 'move only when VBAT >= 3.3 V under load' | ✅ |
test_required_current_at_firmware_move_threshold | BAT pin under stroke load at VSYS idle 3.40 V, -10 C (pack 0.4 Ohm) | 3.18 V | – … – | info: detent research 'move only when VBAT >= 3.3 V under load' (the cold coil still gets > 165 mA) | ✅ |
test_required_current_at_firmware_move_threshold | I_coil at the old firmware non-park threshold (VSYS idle 3.40 V, 25 C) | 159 mA | 165 mA … – | VSM08102 rated phase voltage 3.3-5 V (vendor page via detent research): 3.3 V / 20 Ohm = 165 mA, vs the pre-MD-2 firmware.md §5.8 3.40 V idle | ❌ |
test_required_current_at_firmware_move_threshold_with_fw_rule | BAT pin under stroke load at VSYS idle 3.54 V, 25 C | 3.43 V | – … – | info: detent research 'move only when VBAT >= 3.3 V under load' | ✅ |
test_required_current_at_firmware_move_threshold_with_fw_rule | BAT pin under stroke load at VSYS idle 3.54 V, -10 C (pack 0.4 Ohm) | 3.31 V | – … – | info: detent research 'move only when VBAT >= 3.3 V under load' | ✅ |
test_required_current_at_firmware_move_threshold_with_fw_rule | I_coil at VSYS idle 3.54 V, -10 C | 185 mA | – … – | info: the cold coil (17.2 Ohm) gets more than the 25 C rated current | ✅ |
test_required_current_at_firmware_move_threshold_with_fw_rule | I_coil at the firmware non-park threshold (true VSYS idle = VSYS_est 3.54 V, reading 3.6159 V, 25 C) | 165 mA | 165 mA … – | VSM08102 rated phase voltage 3.3-5 V (vendor page via detent research): 3.3 V / 20 Ohm = 165 mA; firmware rule firmware.md §5.8 non-park moves only with idle VSYS_est = 0.979 x reading >= 3.54 V (MD-2, R1') | ✅ |
test_required_current_at_measured_move_threshold_with_fw_rule[fresh-unit-reads-24mV-high] | true idle VSYS when it reads 3.6159 V (24 mV high) | 3.59 V | – … – | info: firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_required_current_at_measured_move_threshold_with_fw_rule[fresh-unit-reads-24mV-high] | BAT pin under stroke load at true VSYS idle 3.592 V, 25 C | 3.48 V | – … – | info: detent research 'move only when VBAT >= 3.3 V under load' | ✅ |
test_required_current_at_measured_move_threshold_with_fw_rule[fresh-unit-reads-24mV-high] | I_coil at the firmware non-park threshold read 24 mV high (true VSYS idle 3.592 V, 25 C) | 168 mA | 165 mA … – | VSM08102 rated phase voltage 3.3-5 V (vendor page via detent research): 3.3 V / 20 Ohm = 165 mA; firmware rule firmware.md §5.8 non-park moves only with idle VSYS_est = 0.979 x reading >= 3.54 V (MD-2, R1'); firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_required_current_at_measured_move_threshold_with_fw_rule[aged-unit-reads-73mV-high] | true idle VSYS when it reads 3.6159 V (73 mV high) | 3.54 V | – … – | info: firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_required_current_at_measured_move_threshold_with_fw_rule[aged-unit-reads-73mV-high] | BAT pin under stroke load at true VSYS idle 3.543 V, 25 C | 3.43 V | – … – | info: detent research 'move only when VBAT >= 3.3 V under load' | ✅ |
test_required_current_at_measured_move_threshold_with_fw_rule[aged-unit-reads-73mV-high] | I_coil at the firmware non-park threshold read 73 mV high (true VSYS idle 3.543 V, 25 C) | 165 mA | 165 mA … – | VSM08102 rated phase voltage 3.3-5 V (vendor page via detent research): 3.3 V / 20 Ohm = 165 mA; firmware rule firmware.md §5.8 non-park moves only with idle VSYS_est = 0.979 x reading >= 3.54 V (MD-2, R1'); firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | I/I_rated at VBAT 3.0 V, -10 C | 944 m | – … – | info (research: torque about -20 % at 3.0 V) | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | thrust at VBAT 3.0 V, -10 C | 736 mN | 500 mN … – | detent research load budget 0.5 N | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | BAT pin under stroke at VBAT 3.0 V, -10 C | 2.8 V | – … – | info: below 3.0 V BUVLO -> moves must stay locked out (firmware.md §5.8 forbids < 3.30 V) | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | VSYS at the DRV with SYS regulated (ILIM 1050 mA), -10 C | 4.53 V | 4.4 V … – | info/consistency: BQ25180 DS SLUSE99C SYS_REG 4.5 V +-2 % minus link drop | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | I/I_rated at VSYS 4.59 V, -10 C | 1.56 | 1 … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): rated current reached | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | VSYS on USB during a stroke, ILIM 500 mA setting, -10 C | 3.55 V | – … – | info: supplement mode (BQ25180 DS SLUSE99C 8.3.3) when the load exceeds ILIM 450 mA min | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | I/I_rated on USB with ILIM 500 mA (supplement), -10 C | 1.23 | – … – | info | ✅ |
test_ratio_vsys_3v0_vs_4v6[-10] | thrust on USB with ILIM 500 mA (supplement), -10 C | 956 mN | 500 mN … – | detent research load budget 0.5 N | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | I/I_rated at VBAT 3.0 V, 25 C | 847 m | – … – | info (research: torque about -20 % at 3.0 V) | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | thrust at VBAT 3.0 V, 25 C | 660 mN | 500 mN … – | detent research load budget 0.5 N | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | BAT pin under stroke at VBAT 3.0 V, 25 C | 2.9 V | – … – | info: below 3.0 V BUVLO -> moves must stay locked out (firmware.md §5.8 forbids < 3.30 V) | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | VSYS at the DRV with SYS regulated (ILIM 1050 mA), 25 C | 4.54 V | 4.4 V … – | info/consistency: BQ25180 DS SLUSE99C SYS_REG 4.5 V +-2 % minus link drop | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | I/I_rated at VSYS 4.59 V, 25 C | 1.35 | 1 … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): rated current reached | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | VSYS on USB during a stroke, ILIM 500 mA setting, 25 C | 3.6 V | – … – | info: supplement mode (BQ25180 DS SLUSE99C 8.3.3) when the load exceeds ILIM 450 mA min | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | I/I_rated on USB with ILIM 500 mA (supplement), 25 C | 1.07 | – … – | info | ✅ |
test_ratio_vsys_3v0_vs_4v6[25] | thrust on USB with ILIM 500 mA (supplement), 25 C | 837 mN | 500 mN … – | detent research load budget 0.5 N | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | I/I_rated at VBAT 3.0 V, 60 C | 753 m | – … – | info (research: torque about -20 % at 3.0 V) | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | thrust at VBAT 3.0 V, 60 C | 587 mN | 500 mN … – | detent research load budget 0.5 N | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | BAT pin under stroke at VBAT 3.0 V, 60 C | 2.93 V | – … – | info: below 3.0 V BUVLO -> moves must stay locked out (firmware.md §5.8 forbids < 3.30 V) | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | VSYS at the DRV with SYS regulated (ILIM 1050 mA), 60 C | 4.54 V | 4.4 V … – | info/consistency: BQ25180 DS SLUSE99C SYS_REG 4.5 V +-2 % minus link drop | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | I/I_rated at VSYS 4.59 V, 60 C | 1.19 | 1 … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): rated current reached | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | VSYS on USB during a stroke, ILIM 500 mA setting, 60 C | 3.62 V | – … – | info: supplement mode (BQ25180 DS SLUSE99C 8.3.3) when the load exceeds ILIM 450 mA min | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | I/I_rated on USB with ILIM 500 mA (supplement), 60 C | 949 m | – … – | info | ✅ |
test_ratio_vsys_3v0_vs_4v6[60] | thrust on USB with ILIM 500 mA (supplement), 60 C | 741 mN | 500 mN … – | detent research load budget 0.5 N | ✅ |
test_force_vs_verified_worst_load | thrust at VBAT 4.2 V vs verified worst-case load | 930 mN | 1.15 N … – | detent verifier: worst-case load 0.8-1.15 N (architecture.md R4) | ❌ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | avg | I_coil | / rated-drive current at 446 PPS | 1.07 | – … – |
test_fullstep_stepping[446pps-VBAT3.7-25C] | thrust estimate at 446 PPS | 832 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | peak coil / OUT current | 173 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | VM (VSYS) max, whole move | 3.64 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | VM (VSYS) min, whole move | 3.51 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | VM ripple pk-pk while stepping | 120 mV | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | link current per VSYS contact (peak) | 320 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 187 mA | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT3.7-25C] | BAT pin min, whole move | 3.58 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | avg | I_coil | / rated-drive current at 313 PPS | 1.06 | – … – |
test_fullstep_stepping[313pps-VBAT3.7-25C] | thrust estimate at 313 PPS | 827 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | peak coil / OUT current | 173 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | VM (VSYS) max, whole move | 3.64 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | VM (VSYS) min, whole move | 3.51 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | VM ripple pk-pk while stepping | 117 mV | – … – | info | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | link current per VSYS contact (peak) | 320 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 194 mA | – … – | info | ✅ |
test_fullstep_stepping[313pps-VBAT3.7-25C] | BAT pin min, whole move | 3.58 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | avg | I_coil | / rated-drive current at 80 PPS | 1.05 | – … – |
test_fullstep_stepping[80pps-VBAT3.7-25C] | thrust estimate at 80 PPS | 820 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | peak coil / OUT current | 173 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | VM (VSYS) max, whole move | 3.64 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | VM (VSYS) min, whole move | 3.51 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | VM ripple pk-pk while stepping | 112 mV | – … – | info | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | link current per VSYS contact (peak) | 320 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 208 mA | – … – | info | ✅ |
test_fullstep_stepping[80pps-VBAT3.7-25C] | BAT pin min, whole move | 3.58 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | avg | I_coil | / rated-drive current at 80 PPS | 1.05 | – … – |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | thrust estimate at 80 PPS | 818 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | peak coil / OUT current | 175 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | VM (VSYS) max, whole move | 3.64 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | VM (VSYS) min, whole move | 3.51 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | VM ripple pk-pk while stepping | 110 mV | – … – | info | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | link current per VSYS contact (peak) | 320 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 213 mA | – … – | info | ✅ |
test_fullstep_stepping[80pps-stall-VBAT3.7-25C] | BAT pin min, whole move | 3.58 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | avg | I_coil | / rated-drive current at 446 PPS | 868 m | – … – |
test_fullstep_stepping[446pps-VBAT3.4-60C] | thrust estimate at 446 PPS | 677 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | peak coil / OUT current | 141 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | VM (VSYS) max, whole move | 3.35 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | VM (VSYS) min, whole move | 3.26 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | VM ripple pk-pk while stepping | 86.6 mV | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | link current per VSYS contact (peak) | 280 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 179 mA | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT3.4-60C] | BAT pin min, whole move | 3.32 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | avg | I_coil | / rated-drive current at 446 PPS | 1.03 | – … – |
test_fullstep_stepping[446pps-VBAT3.3--10C] | thrust estimate at 446 PPS | 805 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | peak coil / OUT current | 172 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | VM (VSYS) max, whole move | 3.21 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | VM (VSYS) min, whole move | 3.01 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | VM ripple pk-pk while stepping | 171 mV | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | link current per VSYS contact (peak) | 318 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 202 mA | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT3.3--10C] | BAT pin min, whole move | 3.08 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | avg | I_coil | / rated-drive current at 446 PPS | 1.36 | – … – |
test_fullstep_stepping[446pps-VBAT4.2--10C] | thrust estimate at 446 PPS | 1.06 N | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | peak coil / OUT current | 220 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | VM (VSYS) max, whole move | 4.11 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | VM (VSYS) min, whole move | 3.86 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | VM ripple pk-pk while stepping | 219 mV | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | link current per VSYS contact (peak) | 378 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 214 mA | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBAT4.2--10C] | BAT pin min, whole move | 3.94 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | avg | I_coil | / rated-drive current at 446 PPS | 1.17 | – … – |
test_fullstep_stepping[446pps-VBUS5.5-25C] | thrust estimate at 446 PPS | 910 mN | 500 mN … – | detent research: load <= 0.5 N; F = 0.78 N x I/I_rated-drive | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | peak coil / OUT current | 193 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | VM (VSYS) max, whole move | 4.57 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max (lowest abs max on VSYS) | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | VM (VSYS) min, whole move | 3.59 V | 3 V … – | SPEC §3 LDO dropout <= 300 mV + W25Q128 VCC >= 2.7 V (architecture.md §8 rails) | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | VM ripple pk-pk while stepping | 958 mV | – … – | info | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | link current per VSYS contact (peak) | 326 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_fullstep_stepping[446pps-VBUS5.5-25C] | link current min while stepping (dip at each phase reversal; < 0 = regen into base) | 357 mA | – … – | info | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | effective VSYS capacitance at 5 V (both boards) | 32.1 µF | – … – | info: Samsung SEM DC-bias data (25 C) per netlist MPN; tolerance from the MPN code (K 10 %, M 20 %) | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | coil current before turn-off | 249 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | VSYS peak after turn-off | 4.4 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | VM peak after turn-off | 4.4 V | – … 11 V | DRV8837 DS SLVSBA4F Table 6.3 VM max | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | link current after turn-off, most negative (back to base) | -382 mA | – … – | info | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | OUT swing below GND during freewheel | -493 mV | – … – | info (body diode) | ✅ |
test_turnoff_kick[battery-4.2V-cold-coast] | coil current decay to < 1 mA | 325 µs | – … – | info | ✅ |
test_turnoff_kick[usb-charging-coast] | effective VSYS capacitance at 5 V (both boards) | 32.1 µF | – … – | info: Samsung SEM DC-bias data (25 C) per netlist MPN; tolerance from the MPN code (K 10 %, M 20 %) | ✅ |
test_turnoff_kick[usb-charging-coast] | coil current before turn-off | 230 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_turnoff_kick[usb-charging-coast] | VSYS peak after turn-off | 4.61 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V | ✅ |
test_turnoff_kick[usb-charging-coast] | VM peak after turn-off | 4.61 V | – … 11 V | DRV8837 DS SLVSBA4F Table 6.3 VM max | ✅ |
test_turnoff_kick[usb-charging-coast] | link current after turn-off, most negative (back to base) | -375 mA | – … – | info | ✅ |
test_turnoff_kick[usb-charging-coast] | OUT swing below GND during freewheel | -494 mV | – … – | info (body diode) | ✅ |
test_turnoff_kick[usb-charging-coast] | coil current decay to < 1 mA | 296 µs | – … – | info | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | effective VSYS capacitance at 5 V (both boards) | 39.5 µF | – … – | info: Samsung SEM DC-bias data (25 C) per netlist MPN; tolerance from the MPN code (K 10 %, M 20 %) | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | coil current before turn-off | 219 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | VSYS peak after turn-off | 5.08 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | VM peak after turn-off | 5.08 V | – … 11 V | DRV8837 DS SLVSBA4F Table 6.3 VM max | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | link current after turn-off, most negative (back to base) | -176 mA | – … – | info | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | OUT swing below GND during freewheel | -503 mV | – … – | info (body diode) | ✅ |
test_turnoff_kick[usb-chargedone-nominal-coast] | coil current decay to < 1 mA | 111 µs | – … – | info | ✅ |
test_turnoff_kick[usb-chargedone-worst-coast] | effective VSYS capacitance at 5 V (both boards) | 32.1 µF | – … – | info: Samsung SEM DC-bias data (25 C) per netlist MPN; tolerance from the MPN code (K 10 %, M 20 %) | ✅ |
test_turnoff_kick[usb-chargedone-worst-coast] | coil current before turn-off | 259 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_turnoff_kick[usb-chargedone-worst-coast] | VSYS peak after turn-off | 6.48 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V | ❌ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | effective VSYS capacitance at 5 V (both boards) | 32.1 µF | – … – | info: Samsung SEM DC-bias data (25 C) per netlist MPN; tolerance from the MPN code (K 10 %, M 20 %) | ✅ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | coil current before turn-off | 259 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | VSYS peak after turn-off | 4.59 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V; firmware rule firmware.md §5.2 (MD-1): brake IN1 = IN2 = 1 for 3 ms, then IN = 00 and nSLEEP low | ✅ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | VM peak after turn-off | 4.59 V | – … 11 V | DRV8837 DS SLVSBA4F Table 6.3 VM max; firmware rule firmware.md §5.2 (MD-1): brake IN1 = IN2 = 1 for 3 ms, then IN = 00 and nSLEEP low | ✅ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | link current after turn-off, most negative (back to base) | -14.9 mA | – … – | info | ✅ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | OUT swing below GND during freewheel | -494 mV | – … – | info (body diode) | ✅ |
test_turnoff_kick[usb-chargedone-worst-brake-then-sleep] | coil current decay to < 1 mA | 3 ms | – … – | info | ✅ |
test_firmware_drive_coast_kick[full-step-position] | firmware drive: coil current vector before coast | 203 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_firmware_drive_coast_kick[full-step-position] | VSYS peak after coast from the firmware drive (IDLE entry / MCU reset) | 5.31 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V | ✅ |
test_firmware_drive_coast_kick[mid-step-45deg] | firmware drive: coil current vector before coast | 202 mA | – … 1.8 A | DRV8837 DS SLVSBA4F Table 6.3 IOUT | ✅ |
test_firmware_drive_coast_kick[mid-step-45deg] | VSYS peak after coast from the firmware drive (IDLE entry / MCU reset) | 5.36 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max 5.5 V | ✅ |
test_vm_capacitors_per_spec | VM bypass caps (0.1 uF class) on the driver sheet, one per DRV8837 (C70 C72) | 2 | 2 … – | SPEC §5.6 (VM <- VSYS: 0.1 uF each + one 10 uF 0805 shared); DRV8837 DS SLVSBA4F §5 Pin Functions / §9.1 (0.1 uF VM bypass); DRV8837 DS SLVSBA4F §8.1 gives no bulk value (system-level) | ✅ |
test_vm_capacitors_per_spec | shared VM bulk caps (>= 10 uF nominal) on the driver sheet (C74) | 1 | 1 … – | SPEC §5.6 (VM <- VSYS: 0.1 uF each + one 10 uF 0805 shared); DRV8837 DS SLVSBA4F §5 Pin Functions / §9.1 (0.1 uF VM bypass); DRV8837 DS SLVSBA4F §8.1 gives no bulk value (system-level) | ✅ |
test_vm_capacitors_per_spec | C74 case size, body length (SPEC §5.6: 0805 or larger) | 2 mm | 2 mm … – | SPEC §5.6 (one 10 uF 0805 shared) | ✅ |
test_vm_capacitors_per_spec | C74 voltage rating vs the highest VM (VSYS abs max) | 25 V | 5.5 V … – | DRV8837 DS SLVSBA4F §8.1 bulk rating above the operating voltage; BQ25180 DS SLUSE99C Table 7.1 SYS 5.5 V | ✅ |
test_vm_capacitors_per_spec | C70 voltage rating vs the highest VM (VSYS abs max) | 16 V | 5.5 V … – | DRV8837 DS SLVSBA4F §8.1 bulk rating above the operating voltage; BQ25180 DS SLUSE99C Table 7.1 SYS 5.5 V | ✅ |
test_vm_capacitors_per_spec | C72 voltage rating vs the highest VM (VSYS abs max) | 16 V | 5.5 V … – | DRV8837 DS SLVSBA4F §8.1 bulk rating above the operating voltage; BQ25180 DS SLUSE99C Table 7.1 SYS 5.5 V | ✅ |
test_vm_capacitors_per_spec | shared VM bulk, effective at 5 V (vendor DC bias, minus MPN tolerance) | 4.47 µF | – … – | info: Samsung SEM DC-bias data (25 C) per netlist MPN; tolerance from the MPN code (K 10 %, M 20 %) | ✅ |
test_vm_capacitors_per_spec | shared VM bulk share of the effective VSYS capacitance at 5 V | 139 m | – … – | info | ✅ |
test_fault_c74_left_off_is_detected | FAULT C74 left off: shared VM bulk caps (>= 10 uF) on the driver sheet (must be < 1) | 0 | – … 0 | SPEC §5.6 (VM <- VSYS: 0.1 uF each + one 10 uF 0805 shared); DRV8837 DS SLVSBA4F §5 Pin Functions / §9.1 (0.1 uF VM bypass); DRV8837 DS SLVSBA4F §8.1 gives no bulk value (system-level) (fault detected when below 1) | ✅ |
test_fault_c74_left_off_is_detected | FAULT C74 left off: VSYS peak after a mid-step coast (worst corner) | 5.48 V | – … – | info: below the BQ25180 DS SLUSE99C 5.5 V abs max since MD-5 (25 V VSYS caps); 5.36 V with C74 fitted | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | PWM duty amplitude d_peak | 878 m | – … 1 | pre-MD-3 firmware.md §5.3 d = 160 mA x 20.3 Ohm / VSYS | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | µstep current-vector magnitude | 127 mA | – … – | info | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | VM ripple pk-pk, 25 kHz PWM | 43.2 mV | – … – | info | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | VM (VSYS) max, 25 kHz PWM | 3.62 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | link current per VSYS contact, 25 kHz PWM | 209 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | BAT pin min, 25 kHz PWM | 3.63 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_firmware_microstep_pwm[VBAT3.7-25C] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 518 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector) | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | PWM duty amplitude d_peak | 878 m | – … 1 | pre-MD-3 firmware.md §5.3 d = 160 mA x 20.3 Ohm / VSYS | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | µstep current-vector magnitude | 112 mA | – … – | info | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | VM ripple pk-pk, 25 kHz PWM | 38.2 mV | – … – | info | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | VM (VSYS) max, 25 kHz PWM | 3.64 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | link current per VSYS contact, 25 kHz PWM | 201 mA | – … 1 A | JST SH 1 A/contact (SPEC §2) | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | BAT pin min, 25 kHz PWM | 3.64 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V | ✅ |
test_firmware_microstep_pwm[VBAT3.7-60C] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 458 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector) | ❌ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | MD-3 R_eff at 60 C (firmware.md §5.3 formula) | 23.1 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | PWM duty amplitude d_peak | 998 m | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | µstep current-vector magnitude | 130 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | VM ripple pk-pk, 25 kHz PWM | 39.4 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | VM (VSYS) max, 25 kHz PWM | 3.63 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | link current per VSYS contact, 25 kHz PWM | 218 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | BAT pin min, 25 kHz PWM | 3.64 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.7-60C] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 533 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | MD-3 R_eff at 60 C (firmware.md §5.3 formula) | 23.1 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | idle VSYS firmware measures (true idle VSYS is the supply) | 3.62 V | – … – | info: firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | PWM duty amplitude d_peak | 1 | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | µstep current-vector magnitude | 124 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | VM ripple pk-pk, 25 kHz PWM | 36.8 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | VM (VSYS) max, 25 kHz PWM | 3.47 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | link current per VSYS contact, 25 kHz PWM | 212 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | BAT pin min, 25 kHz PWM | 3.48 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-60C-reads-3.616] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 506 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | MD-3 R_eff at 25 C (firmware.md §5.3 formula) | 20.3 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | idle VSYS firmware measures (true idle VSYS is the supply) | 3.62 V | – … – | info: firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | PWM duty amplitude d_peak | 900 m | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | µstep current-vector magnitude | 123 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | VM ripple pk-pk, 25 kHz PWM | 40.7 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | VM (VSYS) max, 25 kHz PWM | 3.46 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | link current per VSYS contact, 25 kHz PWM | 207 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | BAT pin min, 25 kHz PWM | 3.47 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54-25C-reads-3.616] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 505 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | MD-3 R_eff at -10 C (firmware.md §5.3 formula) | 20.3 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | idle VSYS firmware measures (true idle VSYS is the supply) | 3.62 V | – … – | info: firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | PWM duty amplitude d_peak | 900 m | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | µstep current-vector magnitude | 140 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | VM ripple pk-pk, 25 kHz PWM | 46.5 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | VM (VSYS) max, 25 kHz PWM | 3.4 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | link current per VSYS contact, 25 kHz PWM | 213 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | BAT pin min, 25 kHz PWM | 3.4 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.54--10C-reads-3.616] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 572 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.616 V, 76 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | MD-3 R_eff at 60 C (firmware.md §5.3 formula) | 23.1 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | PWM duty amplitude d_peak | 1 | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | µstep current-vector magnitude | 124 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | VM ripple pk-pk, 25 kHz PWM | 36.9 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | VM (VSYS) max, 25 kHz PWM | 3.48 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | link current per VSYS contact, 25 kHz PWM | 212 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | BAT pin min, 25 kHz PWM | 3.49 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-60C] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 508 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | MD-3 R_eff at 25 C (firmware.md §5.3 formula) | 20.3 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | PWM duty amplitude d_peak | 916 m | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | µstep current-vector magnitude | 127 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | VM ripple pk-pk, 25 kHz PWM | 41.2 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | VM (VSYS) max, 25 kHz PWM | 3.47 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | link current per VSYS contact, 25 kHz PWM | 210 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | BAT pin min, 25 kHz PWM | 3.47 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55-25C] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 518 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | MD-3 R_eff at 60 C (firmware.md §5.3 formula) | 23.1 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | idle VSYS firmware measures (true idle VSYS is the supply) | 3.55 V | – … – | info: firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1') | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | PWM duty amplitude d_peak | 1 | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | µstep current-vector magnitude | 122 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | VM ripple pk-pk, 25 kHz PWM | 36.2 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | VM (VSYS) max, 25 kHz PWM | 3.43 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.550 V, 46 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | link current per VSYS contact, 25 kHz PWM | 210 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.550 V, 46 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | BAT pin min, 25 kHz PWM | 3.44 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.550 V, 46 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.504-60C-reads-3.55] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 500 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1; idle VSYS read 3.550 V, 46 mV above the true idle VSYS (MD-2 threshold: a reading >= 3.6159 V; firmware.md §12.4 (VSENSE-1/4) calibrated VSYS reading about ±24 mV at 15-35 °C fresh, up to 73 mV high aged at -10 / 60 °C; VSYS_est = 0.979 x reading (R1')) | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | MD-3 R_eff at -10 C (firmware.md §5.3 formula) | 20.3 Ohm | – … – | info: firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | PWM duty amplitude d_peak | 916 m | – … 1 | firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | µstep current-vector magnitude | 143 mA | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | VM ripple pk-pk, 25 kHz PWM | 47 mV | – … – | info | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | VM (VSYS) max, 25 kHz PWM | 3.41 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.1 SYS abs max; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | link current per VSYS contact, 25 kHz PWM | 216 mA | – … 1 A | JST SH 1 A/contact (SPEC §2); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | BAT pin min, 25 kHz PWM | 3.41 V | 3 V … – | BQ25180 DS SLUSE99C VBUVLO 3.0 V; firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_firmware_microstep_pwm_with_fw_rule[VBAT3.55--10C] | µstep thrust estimate (vs 2-phase-on rating at 446 PPS) | 586 mN | 500 mN … – | detent research load <= 0.5 N; rating assumed 2-2 phase full step at 3.3 V (sqrt2 x I vector); firmware rule firmware.md §5.3 (MD-3) d = I x (20 Ohm x (1 + 0.00393 x (max(T, 25 C) - 25 C)) + 0.33 Ohm) / VSYS, clamp d <= 1 | ✅ |
test_nsleep_wake[2.9] | nSLEEP high level (R70 x0.99, +3V3 2.9 V) | 2.83 V | 1.45 V … – | DRV8837 DS SLVSBA4F Table 6.5 VIH max | ✅ |
test_nsleep_wake[2.9] | bridge active after nSLEEP edge (R70 x0.99, +3V3 2.9 V) | 29.9 µs | – … 1 ms | firmware.md §5.2 1 ms wait (>= DRV8837 DS SLVSBA4F Table 6.6 twake 30 us) | ✅ |
test_nsleep_wake[2.9] | coil current settles (90 %) within the pre-energise (R70 x0.99, +3V3 2.9 V) | 480 µs | – … 10 ms | firmware.md §5.2 energise 10 ms | ✅ |
test_nsleep_wake[2.9] | coil A current reaches the run level (R70 x0.99, +3V3 2.9 V) | 176 mA | 82.5 mA … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): drive must actually energise | ✅ |
test_nsleep_wake[2.9] | nSLEEP high level (R70 x1.01, +3V3 2.9 V) | 2.83 V | 1.45 V … – | DRV8837 DS SLVSBA4F Table 6.5 VIH max | ✅ |
test_nsleep_wake[2.9] | bridge active after nSLEEP edge (R70 x1.01, +3V3 2.9 V) | 30.1 µs | – … 1 ms | firmware.md §5.2 1 ms wait (>= DRV8837 DS SLVSBA4F Table 6.6 twake 30 us) | ✅ |
test_nsleep_wake[2.9] | coil current settles (90 %) within the pre-energise (R70 x1.01, +3V3 2.9 V) | 479 µs | – … 10 ms | firmware.md §5.2 energise 10 ms | ✅ |
test_nsleep_wake[2.9] | coil A current reaches the run level (R70 x1.01, +3V3 2.9 V) | 176 mA | 82.5 mA … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): drive must actually energise | ✅ |
test_nsleep_wake[3.3] | nSLEEP high level (R70 x0.99, +3V3 3.3 V) | 3.22 V | 1.65 V … – | DRV8837 DS SLVSBA4F Table 6.5 VIH max | ✅ |
test_nsleep_wake[3.3] | bridge active after nSLEEP edge (R70 x0.99, +3V3 3.3 V) | 30 µs | – … 1 ms | firmware.md §5.2 1 ms wait (>= DRV8837 DS SLVSBA4F Table 6.6 twake 30 us) | ✅ |
test_nsleep_wake[3.3] | coil current settles (90 %) within the pre-energise (R70 x0.99, +3V3 3.3 V) | 479 µs | – … 10 ms | firmware.md §5.2 energise 10 ms | ✅ |
test_nsleep_wake[3.3] | coil A current reaches the run level (R70 x0.99, +3V3 3.3 V) | 176 mA | 82.5 mA … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): drive must actually energise | ✅ |
test_nsleep_wake[3.3] | nSLEEP high level (R70 x1.01, +3V3 3.3 V) | 3.22 V | 1.65 V … – | DRV8837 DS SLVSBA4F Table 6.5 VIH max | ✅ |
test_nsleep_wake[3.3] | bridge active after nSLEEP edge (R70 x1.01, +3V3 3.3 V) | 30 µs | – … 1 ms | firmware.md §5.2 1 ms wait (>= DRV8837 DS SLVSBA4F Table 6.6 twake 30 us) | ✅ |
test_nsleep_wake[3.3] | coil current settles (90 %) within the pre-energise (R70 x1.01, +3V3 3.3 V) | 479 µs | – … 10 ms | firmware.md §5.2 energise 10 ms | ✅ |
test_nsleep_wake[3.3] | coil A current reaches the run level (R70 x1.01, +3V3 3.3 V) | 176 mA | 82.5 mA … – | detent research (VSM08102 3.3 V / 20 Ohm, >= 80 gf at 500 PPS): drive must actually energise | ✅ |
test_fault_r70_wrong_value_is_detected | FAULT R70=100: nSLEEP high level (must violate VIH) | 366 mV | – … 1.65 V | DRV8837 DS SLVSBA4F Table 6.5 VIH max (fault detected when below) | ✅ |
test_fault_c70_solder_short_is_detected | FAULT C70 short: SYS current (must exceed 1.5 A) | 9.98 A | 1.5 A … – | BQ25180 DS SLUSE99C Table 7.1 SYS DC 1.5 A (fault detected when above) | ✅ |
test_fault_motor_connector_bridge_trips_ocp | FAULT J40 bridge: peak OUT current (must exceed IOUT) | 2.09 A | 1.8 A … – | DRV8837 DS SLVSBA4F Table 6.3 IOUT 1.8 A (fault detected when above) | ✅ |
test_fault_motor_connector_bridge_trips_ocp | OCP retry interval | 999 µs | 800 µs … 1.3 ms | DRV8837 DS SLVSBA4F Table 6.5 tRETRY 1 ms | ✅ |
test_home_n_levels_and_latency[netlist] | HOME_N high (no magnet) | 3.3 V | 2.31 V … – | nRF52840 PS v1.6 §6.9.3.1 VIH 0.7 VDD; DRV5032 DS SLVSDC7H VOH | ✅ |
test_home_n_levels_and_latency[netlist] | HOME_N low (magnet parked) | 990 nV | – … 990 mV | nRF52840 PS v1.6 §6.9.3.1 VIL 0.3 VDD; DRV5032 DS SLVSDC7H VOL | ✅ |
test_home_n_levels_and_latency[netlist] | DRV5032 output current | 450 nA | – … 5 mA | DRV5032 DS SLVSDC7H Table 6.3 IO | ✅ |
test_home_n_levels_and_latency[netlist] | HOME_N assert latency (worst phase, tS max) | 75 ms | – … 97.4 ms | firmware.md §5.4 edge window: lag 0.075 s + m 10 steps at 446 PPS (DRV5032 DS SLVSDC7H tS max 75 ms + tACTIVE 40 us) | ✅ |
test_home_n_levels_and_latency[netlist] | HOME_N release latency (worst phase, tS max) | 75 ms | – … 97.4 ms | firmware.md §5.4 edge window: lag 0.075 s + m 10 steps at 446 PPS (DRV5032 DS SLVSDC7H tS max 75 ms + tACTIVE 40 us) | ✅ |
test_home_n_levels_and_latency[netlist] | DRV5032 worst-case latency vs the bare lag term (tS max + tACTIVE) | 75 ms | – … – | info: exceeds the 0.075 s lag term by tACTIVE; covered by the m >= 10 step margin (firmware.md §5.4) | ✅ |
test_home_n_levels_and_latency[netlist] | DRV5032 VCC min during the 2.7 mA sample pulse | 3.3 V | 1.65 V … – | DRV5032 DS SLVSDC7H Table 6.3 VCC min | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | HOME_N high (no magnet) | 3.3 V | 2.31 V … – | nRF52840 PS v1.6 §6.9.3.1 VIH 0.7 VDD; DRV5032 DS SLVSDC7H VOH | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | HOME_N low (magnet parked) | 74.4 mV | – … 990 mV | nRF52840 PS v1.6 §6.9.3.1 VIL 0.3 VDD; DRV5032 DS SLVSDC7H VOL | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | DRV5032 output current | 248 µA | – … 5 mA | DRV5032 DS SLVSDC7H Table 6.3 IO | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | HOME_N assert latency (worst phase, tS max) | 75 ms | – … 97.4 ms | firmware.md §5.4 edge window: lag 0.075 s + m 10 steps at 446 PPS (DRV5032 DS SLVSDC7H tS max 75 ms + tACTIVE 40 us) | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | HOME_N release latency (worst phase, tS max) | 75 ms | – … 97.4 ms | firmware.md §5.4 edge window: lag 0.075 s + m 10 steps at 446 PPS (DRV5032 DS SLVSDC7H tS max 75 ms + tACTIVE 40 us) | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | DRV5032 worst-case latency vs the bare lag term (tS max + tACTIVE) | 75 ms | – … – | info: exceeds the 0.075 s lag term by tACTIVE; covered by the m >= 10 step margin (firmware.md §5.4) | ✅ |
test_home_n_levels_and_latency[nrf-pullup-13k] | DRV5032 VCC min during the 2.7 mA sample pulse | 3.3 V | 1.65 V … – | DRV5032 DS SLVSDC7H Table 6.3 VCC min | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | HOME_N high (no magnet) | 3.21 V | 2.31 V … – | nRF52840 PS v1.6 §6.9.3.1 VIH 0.7 VDD; DRV5032 DS SLVSDC7H VOH | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | HOME_N low (magnet parked) | 0.0V | – … 990 mV | nRF52840 PS v1.6 §6.9.3.1 VIL 0.3 VDD; DRV5032 DS SLVSDC7H VOL | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | DRV5032 output current | 289 µA | – … 5 mA | DRV5032 DS SLVSDC7H Table 6.3 IO | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | HOME_N assert latency (worst phase, tS max) | 75 ms | – … 97.4 ms | firmware.md §5.4 edge window: lag 0.075 s + m 10 steps at 446 PPS (DRV5032 DS SLVSDC7H tS max 75 ms + tACTIVE 40 us) | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | HOME_N release latency (worst phase, tS max) | 75 ms | – … 97.4 ms | firmware.md §5.4 edge window: lag 0.075 s + m 10 steps at 446 PPS (DRV5032 DS SLVSDC7H tS max 75 ms + tACTIVE 40 us) | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | DRV5032 worst-case latency vs the bare lag term (tS max + tACTIVE) | 75 ms | – … – | info: exceeds the 0.075 s lag term by tACTIVE; covered by the m >= 10 step margin (firmware.md §5.4) | ✅ |
test_home_n_levels_and_latency[nrf-pulldown-13k] | DRV5032 VCC min during the 2.7 mA sample pulse | 3.3 V | 1.65 V … – | DRV5032 DS SLVSDC7H Table 6.3 VCC min | ✅ |
test_fault_wrong_hall_variant_is_detected | FAULT FB variant: HOME_N latency (must exceed the 97 ms window) | 286 ms | 97.4 ms … – | firmware.md §5.4 edge window (fault detected when above) | ✅ |
test_fault_open_drain_hall_variant_is_detected | FAULT FC (open-drain) variant: HOME_N with no magnet (must violate VIH) | 1.65 mV | – … 2.31 V | nRF52840 PS v1.6 §6.9.3.1 VIH 0.7 VDD; DRV5032 DS SLVSDC7H Table 4-1 open-drain, Table 6.5 IOZ (fault detected when below) | ✅ |
test_static_ratings | L20 min (tolerance) | 8 µH | 2.2 µH … – | TPS61040 SLVS413L 5.3 / 7.2.2.1: L 2.2-47 uH | ✅ |
test_static_ratings | L20 max (tolerance) | 12 µH | – … 47 µH | TPS61040 SLVS413L 7.2.2.1: L 2.2-47 uH | ✅ |
test_static_ratings | COUT effective at 13 V (fitted netlist caps, min tol, DC bias) | 3.93 µF | 1 µF … – | TPS61040 SLVS413L 5.3: COUT >= 1 uF (Samsung CL21A106 DC-bias -71 % at 13 V) | ✅ |
test_static_ratings | CIN fitted at U20 (marked, OLED_VIN to GND) | 4.7 µF | 4.7 µF … – | TPS61040 SLVS413L 5.3 CIN 4.7 uF (recommended) / 7.2.2.5 | ✅ |
test_static_ratings | R27 (R2 of the divider) | 52.3 kohm | – … 200 kohm | TPS61040 SLVS413L 7.2.2.2: R2 <= 200 kOhm | ✅ |
test_static_ratings | R26 (R1 of the divider) | 499 kohm | – … 2.2 Mohm | TPS61040 SLVS413L 7.2.2.2: R1 <= 2.2 MOhm | ✅ |
test_static_ratings | VSYS max at U21 VIN | 4.6 V | – … 5.5 V | TPS22917 SLVSDW8B Table 7.3: VIN <= 5.5 V | ✅ |
test_static_ratings | VSYS max at U20 VIN | 4.6 V | – … 6 V | TPS61040 SLVS413L 5.3: VIN <= 6 V | ✅ |
test_static_ratings | D21 reverse voltage (VCC abs max) | 19 V | – … 40 V | CJ B5819W rev D: VRRM 40 V | ✅ |
test_static_ratings | worst-case switch / L20 peak, eq. 1 (ILIM max, VIN 4.6 V, L min) | 508 mA | – … 720 mA | TPS61040 SLVS413L eq. 1 + 7.2.2.1 (use ILIM max); Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_static_ratings | worst-case D21 peak, eq. 1 | 508 mA | – … 1.5 A | TPS61040 SLVS413L 7.2.2.6; CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_nominal_regulation | VCC avg, VBAT 3.7 V, 1.0 mA | 13 V | 12.5 V … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_nominal_regulation | VCC min, VBAT 3.7 V, 1.0 mA | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_nominal_regulation | VCC max, VBAT 3.7 V, 1.0 mA | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_nominal_regulation | VCC avg in the eq. 5 set-point band, 1.0 mA | 13 V | 12.7 V … 13.3 V | TPS61040 SLVS413L 5.5 VFB 1.208-1.258 V with eq. 5 VOUT = VFB (1 + R1/R2) | ✅ |
test_nominal_regulation | VCC avg, VBAT 3.7 V, 23.2 mA | 13 V | 12.5 V … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_nominal_regulation | VCC min, VBAT 3.7 V, 23.2 mA | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_nominal_regulation | VCC max, VBAT 3.7 V, 23.2 mA | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_nominal_regulation | VCC avg in the eq. 5 set-point band, 23.2 mA | 13 V | 12.7 V … 13.3 V | TPS61040 SLVS413L 5.5 VFB 1.208-1.258 V with eq. 5 VOUT = VFB (1 + R1/R2) | ✅ |
test_regulation_over_divider_and_reference_tolerance | VCC max: VFB max, R corners, 1 mA, VSYS 4.6 V | 13.4 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V; TPS61040 SLVS413L 5.5 VFB 1.208-1.258 V with eq. 5 VOUT = VFB (1 + R1/R2) | ✅ |
test_regulation_over_divider_and_reference_tolerance | VCC min: VFB min, R corners, 42 mA, VSYS 3.6 V | 12.6 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V; TPS61040 SLVS413L 5.5 VFB 1.208-1.258 V with eq. 5 VOUT = VFB (1 + R1/R2) | ✅ |
test_regulation_with_fb_bias_current | VCC max with IFB +1 uA: VFB max, R corners, 1 mA | 13.9 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V; TPS61040 SLVS413L 5.5 VFB 1.208-1.258 V with eq. 5 VOUT = VFB (1 + R1/R2); IFB 1 uA max | ❌ |
test_regulation_with_fb_bias_current | VCC min with IFB -1 uA: VFB min, R corners, 42 mA | 12.1 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V; TPS61040 SLVS413L 5.5 VFB 1.208-1.258 V with eq. 5 VOUT = VFB (1 + R1/R2); IFB 1 uA max | ❌ |
test_ripple_light_and_full_load | VCC max, VSYS 3.7 V, 1.0 mA, L20 x1.2 | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC min, VSYS 3.7 V, 1.0 mA, L20 x1.2 | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC ripple p-p, VSYS 3.7 V, 1.0 mA, L20 x1.2 | 31.5 mV | – … 1 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V (ripple must fit the window) | ✅ |
test_ripple_light_and_full_load | VCC max, VSYS 3.7 V, 42.0 mA, L20 x0.8 | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC min, VSYS 3.7 V, 42.0 mA, L20 x0.8 | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC ripple p-p, VSYS 3.7 V, 42.0 mA, L20 x0.8 | 18.5 mV | – … 1 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V (ripple must fit the window) | ✅ |
test_ripple_light_and_full_load | switching frequency, VSYS 3.7 V, 42.0 mA, L20 x0.8 | 450 kHz | – … 1 MHz | TPS61040 SLVS413L 5.3: switching frequency <= 1 MHz | ✅ |
test_ripple_light_and_full_load | VCC max, VSYS 4.6 V, 1.0 mA, L20 x1.2 | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC min, VSYS 4.6 V, 1.0 mA, L20 x1.2 | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC ripple p-p, VSYS 4.6 V, 1.0 mA, L20 x1.2 | 34.4 mV | – … 1 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V (ripple must fit the window) | ✅ |
test_ripple_light_and_full_load | VCC max, VSYS 4.6 V, 42.0 mA, L20 x0.8 | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC min, VSYS 4.6 V, 42.0 mA, L20 x0.8 | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_ripple_light_and_full_load | VCC ripple p-p, VSYS 4.6 V, 42.0 mA, L20 x0.8 | 23.3 mV | – … 1 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V (ripple must fit the window) | ✅ |
test_ripple_light_and_full_load | switching frequency, VSYS 4.6 V, 42.0 mA, L20 x0.8 | 390 kHz | – … 1 MHz | TPS61040 SLVS413L 5.3: switching frequency <= 1 MHz | ✅ |
test_supply_corners_headroom | boost current at VCC 12.5 V, weak parts, VSYS 3.0 V (load 29 mA + divider) | 32.8 mA | 29 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_supply_corners_headroom | boost current at VCC 12.5 V, weak parts, VSYS 3.7 V (load 42 mA + divider) | 43 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_supply_corners_headroom | boost current at VCC 12.5 V, weak parts, VSYS 4.2 V (load 42 mA + divider) | 50.2 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_supply_corners_headroom | boost current at VCC 12.5 V, weak parts, VSYS 4.6 V (load 42 mA + divider) | 56.1 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_headroom_at_firmware_full_white_threshold | boost current at VCC 12.5 V, weak parts, VSYS 3.6 V (load 42 mA + divider) | 40.9 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ❌ |
test_headroom_at_firmware_full_white_threshold_with_fw_rule | boost current at VCC 12.5 V, weak parts, -10 C, VSYS 3.75 V (fw rule OLED-BST-2: full white only from VBAT_est 3.75 V and LEDs <= 150 mA; load 42 mA + divider) | 43.3 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current; firmware rule (hardware/sim, OLED-BST-2): firmware.md 7.4 / 12.4, SPEC 5.3: C7 <= 08h and <= 30 % white below VBAT_est 3.75 V (VBAT_est = 0.979 x reading, a reading of 3.8304 V; R1') and while the LEDs exceed their 150 mA sustained cap | ✅ |
test_headroom_at_firmware_full_white_threshold_with_fw_rule | boost current at VCC 12.5 V, weak parts, -10 C, VSYS 3.75 V + LEDs 150 mA on VSYS (fw rule OLED-BST-2: full white only from VBAT_est 3.75 V and LEDs <= 150 mA; load 42 mA + divider) | 44.2 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current; firmware rule (hardware/sim, OLED-BST-2): firmware.md 7.4 / 12.4, SPEC 5.3: C7 <= 08h and <= 30 % white below VBAT_est 3.75 V (VBAT_est = 0.979 x reading, a reading of 3.8304 V; R1') and while the LEDs exceed their 150 mA sustained cap; firmware.md 6.3 LED sustained cap 150 mA | ✅ |
test_headroom_at_firmware_full_white_threshold_with_fw_rule | boost current at VCC 12.5 V, weak parts, 25 C, VSYS 3.75 V (fw rule OLED-BST-2: full white only from VBAT_est 3.75 V and LEDs <= 150 mA; load 42 mA + divider) | 43.7 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current; firmware rule (hardware/sim, OLED-BST-2): firmware.md 7.4 / 12.4, SPEC 5.3: C7 <= 08h and <= 30 % white below VBAT_est 3.75 V (VBAT_est = 0.979 x reading, a reading of 3.8304 V; R1') and while the LEDs exceed their 150 mA sustained cap | ✅ |
test_headroom_at_firmware_full_white_threshold_with_fw_rule | boost current at VCC 12.5 V, weak parts, 25 C, VSYS 3.75 V + LEDs 150 mA on VSYS (fw rule OLED-BST-2: full white only from VBAT_est 3.75 V and LEDs <= 150 mA; load 42 mA + divider) | 43.7 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current; firmware rule (hardware/sim, OLED-BST-2): firmware.md 7.4 / 12.4, SPEC 5.3: C7 <= 08h and <= 30 % white below VBAT_est 3.75 V (VBAT_est = 0.979 x reading, a reading of 3.8304 V; R1') and while the LEDs exceed their 150 mA sustained cap; firmware.md 6.3 LED sustained cap 150 mA | ✅ |
test_headroom_at_firmware_full_white_threshold_with_fw_rule | boost current at VCC 12.5 V, weak parts, 60 C, VSYS 3.75 V (fw rule OLED-BST-2: full white only from VBAT_est 3.75 V and LEDs <= 150 mA; load 42 mA + divider) | 44.1 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current; firmware rule (hardware/sim, OLED-BST-2): firmware.md 7.4 / 12.4, SPEC 5.3: C7 <= 08h and <= 30 % white below VBAT_est 3.75 V (VBAT_est = 0.979 x reading, a reading of 3.8304 V; R1') and while the LEDs exceed their 150 mA sustained cap | ✅ |
test_headroom_at_firmware_full_white_threshold_with_fw_rule | boost current at VCC 12.5 V, weak parts, 60 C, VSYS 3.75 V + LEDs 150 mA on VSYS (fw rule OLED-BST-2: full white only from VBAT_est 3.75 V and LEDs <= 150 mA; load 42 mA + divider) | 44.1 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current; firmware rule (hardware/sim, OLED-BST-2): firmware.md 7.4 / 12.4, SPEC 5.3: C7 <= 08h and <= 30 % white below VBAT_est 3.75 V (VBAT_est = 0.979 x reading, a reading of 3.8304 V; R1') and while the LEDs exceed their 150 mA sustained cap; firmware.md 6.3 LED sustained cap 150 mA | ✅ |
test_peak_currents_and_stress | L20 peak current, VSYS 3.0 V | 482 mA | – … 720 mA | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_peak_currents_and_stress | L20 peak vs TPS61040 current limit (eq. 1 bound 0.487 A), VSYS 3.0 V | 482 mA | – … 488 mA | TPS61040 SLVS413L 6.3.1 eq. 1, ILIM max 450 mA | ✅ |
test_peak_currents_and_stress | D21 peak current, VSYS 3.0 V | 475 mA | – … 1.5 A | CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_peak_currents_and_stress | SW peak voltage, VSYS 3.0 V | 13.4 V | – … 30 V | TPS61040 SLVS413L 5.1 abs max: SW 30 V | ✅ |
test_peak_currents_and_stress | switching frequency, VSYS 3.0 V, 29.0 mA | 342 kHz | – … 1 MHz | TPS61040 SLVS413L 5.3: switching frequency <= 1 MHz | ✅ |
test_peak_currents_and_stress | U20 VIN max, VSYS 3.0 V | 2.99 V | – … 6 V | TPS61040 SLVS413L 5.3: VIN <= 6 V | ✅ |
test_peak_currents_and_stress | L20 peak current, VSYS 3.7 V | 484 mA | – … 720 mA | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_peak_currents_and_stress | L20 peak vs TPS61040 current limit (eq. 1 bound 0.496 A), VSYS 3.7 V | 484 mA | – … 496 mA | TPS61040 SLVS413L 6.3.1 eq. 1, ILIM max 450 mA | ✅ |
test_peak_currents_and_stress | D21 peak current, VSYS 3.7 V | 478 mA | – … 1.5 A | CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_peak_currents_and_stress | SW peak voltage, VSYS 3.7 V | 13.4 V | – … 30 V | TPS61040 SLVS413L 5.1 abs max: SW 30 V | ✅ |
test_peak_currents_and_stress | switching frequency, VSYS 3.7 V, 42.0 mA | 450 kHz | – … 1 MHz | TPS61040 SLVS413L 5.3: switching frequency <= 1 MHz | ✅ |
test_peak_currents_and_stress | U20 VIN max, VSYS 3.7 V | 3.69 V | – … 6 V | TPS61040 SLVS413L 5.3: VIN <= 6 V | ✅ |
test_peak_currents_and_stress | L20 peak current, VSYS 4.2 V | 495 mA | – … 720 mA | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_peak_currents_and_stress | L20 peak vs TPS61040 current limit (eq. 1 bound 0.503 A), VSYS 4.2 V | 495 mA | – … 503 mA | TPS61040 SLVS413L 6.3.1 eq. 1, ILIM max 450 mA | ✅ |
test_peak_currents_and_stress | D21 peak current, VSYS 4.2 V | 489 mA | – … 1.5 A | CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_peak_currents_and_stress | SW peak voltage, VSYS 4.2 V | 13.4 V | – … 30 V | TPS61040 SLVS413L 5.1 abs max: SW 30 V | ✅ |
test_peak_currents_and_stress | switching frequency, VSYS 4.2 V, 42.0 mA | 414 kHz | – … 1 MHz | TPS61040 SLVS413L 5.3: switching frequency <= 1 MHz | ✅ |
test_peak_currents_and_stress | U20 VIN max, VSYS 4.2 V | 4.19 V | – … 6 V | TPS61040 SLVS413L 5.3: VIN <= 6 V | ✅ |
test_peak_currents_and_stress | L20 peak current, VSYS 4.6 V | 505 mA | – … 720 mA | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_peak_currents_and_stress | L20 peak vs TPS61040 current limit (eq. 1 bound 0.508 A), VSYS 4.6 V | 505 mA | – … 508 mA | TPS61040 SLVS413L 6.3.1 eq. 1, ILIM max 450 mA | ✅ |
test_peak_currents_and_stress | D21 peak current, VSYS 4.6 V | 500 mA | – … 1.5 A | CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_peak_currents_and_stress | SW peak voltage, VSYS 4.6 V | 13.4 V | – … 30 V | TPS61040 SLVS413L 5.1 abs max: SW 30 V | ✅ |
test_peak_currents_and_stress | switching frequency, VSYS 4.6 V, 42.0 mA | 390 kHz | – … 1 MHz | TPS61040 SLVS413L 5.3: switching frequency <= 1 MHz | ✅ |
test_peak_currents_and_stress | U20 VIN max, VSYS 4.6 V | 4.59 V | – … 6 V | TPS61040 SLVS413L 5.3: VIN <= 6 V | ✅ |
test_temperature | boost current at VCC 12.5 V, typ parts -10 C, VSYS 3.0 V (load 29 mA + divider) | 50.8 mA | 29 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_temperature | boost current at VCC 12.5 V, typ parts -10 C, VSYS 3.6 V (load 42 mA + divider) | 65.3 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_temperature | boost current at VCC 12.5 V, typ parts 25 C, VSYS 3.0 V (load 29 mA + divider) | 50.6 mA | 29 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_temperature | boost current at VCC 12.5 V, typ parts 25 C, VSYS 3.6 V (load 42 mA + divider) | 65.3 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_temperature | boost current at VCC 12.5 V, typ parts 60 C, VSYS 3.0 V (load 29 mA + divider) | 50 mA | 29 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_temperature | boost current at VCC 12.5 V, typ parts 60 C, VSYS 3.6 V (load 42 mA + divider) | 67.4 mA | 42 mA … – | NHD rev 3: ICC 100 % ON 42 mA / 50 % ON 29 mA max at VCC 13 V, VCC >= 12.5 V; load cap per firmware.md 7.4; + R26/R27 divider current | ✅ |
test_temperature | VCC min, -10 C, VSYS 4.6 V, 1.0 mA | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_temperature | VCC max, -10 C, VSYS 4.6 V, 1.0 mA | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_temperature | VCC min, 25 C, VSYS 4.6 V, 1.0 mA | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_temperature | VCC max, 25 C, VSYS 4.6 V, 1.0 mA | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_temperature | VCC min, 60 C, VSYS 4.6 V, 1.0 mA | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_temperature | VCC max, 60 C, VSYS 4.6 V, 1.0 mA | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_startup_inrush_and_overshoot | VCC reaches 12.5 V after OLED_VCC_EN, VSYS 3.0 V, caps marked | 4.94 ms | – … 200 ms | firmware.md 7.2 step 23 (vendor sequence): AFh 200 ms after OLED_VCC_EN, VCC must be in range by then | ✅ |
test_startup_inrush_and_overshoot | VCC overshoot peak, VSYS 3.0 V, caps marked | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_startup_inrush_and_overshoot | VCC settled, VSYS 3.0 V, caps marked | 13 V | 12.5 V … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_startup_inrush_and_overshoot | U21 peak current (inrush), VSYS 3.0 V, caps marked | 388 mA | – … 2.5 A | TPS22917 SLVSDW8B Table 7.1: IPLS 2.5 A (< 300 us, 2 % duty), IMAX 2 A | ✅ |
test_startup_inrush_and_overshoot | L20 peak current at start-up, VSYS 3.0 V, caps marked | 427 mA | – … 720 mA | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_startup_inrush_and_overshoot | D21 peak current at start-up, VSYS 3.0 V, caps marked | 505 mA | – … 1.5 A | CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_startup_inrush_and_overshoot | SW peak at start-up, VSYS 3.0 V, caps marked | 13.4 V | – … 30 V | TPS61040 SLVS413L 5.1 abs max: SW 30 V | ✅ |
test_startup_inrush_and_overshoot | VCC reaches 12.5 V after OLED_VCC_EN, VSYS 4.6 V, caps derated | 3.63 ms | – … 200 ms | firmware.md 7.2 step 23 (vendor sequence): AFh 200 ms after OLED_VCC_EN, VCC must be in range by then | ✅ |
test_startup_inrush_and_overshoot | VCC overshoot peak, VSYS 4.6 V, caps derated | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_startup_inrush_and_overshoot | VCC settled, VSYS 4.6 V, caps derated | 13 V | 12.5 V … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_startup_inrush_and_overshoot | U21 peak current (inrush), VSYS 4.6 V, caps derated | 379 mA | – … 2.5 A | TPS22917 SLVSDW8B Table 7.1: IPLS 2.5 A (< 300 us, 2 % duty), IMAX 2 A | ✅ |
test_startup_inrush_and_overshoot | L20 peak current at start-up, VSYS 4.6 V, caps derated | 428 mA | – … 720 mA | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_startup_inrush_and_overshoot | D21 peak current at start-up, VSYS 4.6 V, caps derated | 505 mA | – … 1.5 A | CJ B5819W rev D Maximum Ratings: IFRM 1.5 A | ✅ |
test_startup_inrush_and_overshoot | SW peak at start-up, VSYS 4.6 V, caps derated | 13.4 V | – … 30 V | TPS61040 SLVS413L 5.1 abs max: SW 30 V | ✅ |
test_startup_inrush_and_overshoot | VCC reaches 12.5 V after OLED_VCC_EN, VSYS 3.0 V, slowest parts | 6.34 ms | – … 200 ms | firmware.md 7.2 step 23 (vendor sequence): AFh 200 ms after OLED_VCC_EN, VCC must be in range by then | ✅ |
test_startup_time_vs_firmware_floor | VCC reaches 12.5 V after OLED_VCC_EN, VSYS 3.0 V, slowest parts (vs the OLD 5 ms firmware floor) | 6.34 ms | – … 5 ms | OLD firmware.md 7.2 step 23: the VCC-to-AFh wait may be shortened after measurement, 'never below 5 ms' (superseded by OLED-V2: 10 ms) | ❌ |
test_startup_time_vs_firmware_floor_with_fw_rule | VCC reaches 12.5 V after OLED_VCC_EN, VSYS 3.0 V, slowest parts (vs the 10 ms firmware floor, OLED-V2) | 6.34 ms | – … 10 ms | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V (VCC >= 12.5 V before AFh); firmware rule (hardware/sim, OLED-V2): firmware.md 7.2 step 23 'the wait MUST never be below 10 ms', 3.1 oled_vcc startup-delay-us = <10000>; SPEC 5.3 | ✅ |
test_usb_500ma_oled_enable | VSYS min during OLED start-up, USB ILIM 500 mA code (450 mA min), no battery | 4.38 V | 3 V … – | architecture.md +3V3 row: the rail is designed for VSYS >= BUVLO 3.0 V (+3V3 >= 2.9 V, W25Q128 needs >= 2.7 V); BQ25180 SLUSE99C 7.5 ILIM, 8.3.3 no supplement below BUVLO; firmware.md 13.3 / 6.3 | ✅ |
test_usb_500ma_oled_enable | VCC settled, USB only | 13 V | 12.5 V … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_usb_100ma_dead_battery_oled_enable | VSYS min during OLED start-up, USB ILIM 100 mA code (98 mA max), battery below BUVLO | 2.32 V | 3 V … – | architecture.md +3V3 row: the rail is designed for VSYS >= BUVLO 3.0 V (+3V3 >= 2.9 V, W25Q128 needs >= 2.7 V); BQ25180 SLUSE99C 7.5 ILIM, 8.3.3 no supplement below BUVLO; firmware.md 13.3 / 6.3 | ❌ |
test_usb_100ma_dead_battery_oled_enable_with_fw_rule | VSYS min, USB ILIM 100 mA code (80 mA), battery below BUVLO, fw rule NEW-1: OLED_VCC_EN held low, 20 mA load | 4.4 V | 3 V … – | architecture.md +3V3 row: the rail is designed for VSYS >= BUVLO 3.0 V (+3V3 >= 2.9 V, W25Q128 needs >= 2.7 V); BQ25180 SLUSE99C 7.5 ILIM, 8.3.3 no supplement below BUVLO; firmware.md 13.3 / 6.3; firmware rule (hardware/sim, NEW-1, OLED-V1): firmware.md 6.3 / 7.2 OLED_VCC_EN rules / 13.3, SPEC 5.3: OLED_VCC_EN MUST stay low while TMR_ILIM = 0xC9 (100 mA) unless the battery can supplement SYS; LEDs show the <= 20 mA charging cue until ILIM = 500 mA | ✅ |
test_usb_100ma_dead_battery_oled_enable_with_fw_rule | VSYS min, USB ILIM 100 mA code (80 mA), battery below BUVLO, fw rule NEW-1: OLED_VCC_EN held low, 70 mA load | 4.4 V | 3 V … – | architecture.md +3V3 row: the rail is designed for VSYS >= BUVLO 3.0 V (+3V3 >= 2.9 V, W25Q128 needs >= 2.7 V); BQ25180 SLUSE99C 7.5 ILIM, 8.3.3 no supplement below BUVLO; firmware.md 13.3 / 6.3; firmware rule (hardware/sim, NEW-1, OLED-V1): firmware.md 6.3 / 7.2 OLED_VCC_EN rules / 13.3, SPEC 5.3: OLED_VCC_EN MUST stay low while TMR_ILIM = 0xC9 (100 mA) unless the battery can supplement SYS; LEDs show the <= 20 mA charging cue until ILIM = 500 mA; firmware.md 6.3 no-supplement ILIM-100 total <= 70 mA (PI-4) | ✅ |
test_usb_100ma_dead_battery_oled_enable_with_fw_rule | VSYS min, USB ILIM 100 mA code (98 mA), battery below BUVLO, fw rule NEW-1: OLED_VCC_EN held low, 20 mA load | 4.4 V | 3 V … – | architecture.md +3V3 row: the rail is designed for VSYS >= BUVLO 3.0 V (+3V3 >= 2.9 V, W25Q128 needs >= 2.7 V); BQ25180 SLUSE99C 7.5 ILIM, 8.3.3 no supplement below BUVLO; firmware.md 13.3 / 6.3; firmware rule (hardware/sim, NEW-1, OLED-V1): firmware.md 6.3 / 7.2 OLED_VCC_EN rules / 13.3, SPEC 5.3: OLED_VCC_EN MUST stay low while TMR_ILIM = 0xC9 (100 mA) unless the battery can supplement SYS; LEDs show the <= 20 mA charging cue until ILIM = 500 mA | ✅ |
test_usb_100ma_dead_battery_oled_enable_with_fw_rule | VSYS min, USB ILIM 100 mA code (98 mA), battery below BUVLO, fw rule NEW-1: OLED_VCC_EN held low, 70 mA load | 4.4 V | 3 V … – | architecture.md +3V3 row: the rail is designed for VSYS >= BUVLO 3.0 V (+3V3 >= 2.9 V, W25Q128 needs >= 2.7 V); BQ25180 SLUSE99C 7.5 ILIM, 8.3.3 no supplement below BUVLO; firmware.md 13.3 / 6.3; firmware rule (hardware/sim, NEW-1, OLED-V1): firmware.md 6.3 / 7.2 OLED_VCC_EN rules / 13.3, SPEC 5.3: OLED_VCC_EN MUST stay low while TMR_ILIM = 0xC9 (100 mA) unless the battery can supplement SYS; LEDs show the <= 20 mA charging cue until ILIM = 500 mA; firmware.md 6.3 no-supplement ILIM-100 total <= 70 mA (PI-4) | ✅ |
test_load_steps | VCC min after 1.0->42.0 mA step, VSYS 3.7 V | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC max after 1.0->42.0 mA step, VSYS 3.7 V | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC min after 42.0->1.0 mA step, VSYS 3.7 V | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC max after 42.0->1.0 mA step, VSYS 3.7 V | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC min after 0.0->29.0 mA step, VSYS 3.0 V | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC max after 0.0->29.0 mA step, VSYS 3.0 V | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC min after 42.0->0.0 mA step, VSYS 4.6 V | 13 V | 12.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_load_steps | VCC max after 42.0->0.0 mA step, VSYS 4.6 V | 13.1 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_line_transients | VCC min, VSYS 4.6 <-> 3.7 V (USB unplug/plug), 42.0 mA | 13 V | 12.5 V … – | NHD rev 3 VCC 12.5-13.5 V; line steps: USB unplug / plug-in moves VSYS between SYS_REG 4.6 V and VBAT (BQ25180 SLUSE99C 8.3.3 supplement), battery sag 0.2 V at 0.8 A (architecture.md 8.4) | ✅ |
test_line_transients | VCC max, VSYS 4.6 <-> 3.7 V (USB unplug/plug), 42.0 mA | 13 V | – … 13.5 V | NHD rev 3 VCC 12.5-13.5 V; line steps: USB unplug / plug-in moves VSYS between SYS_REG 4.6 V and VBAT (BQ25180 SLUSE99C 8.3.3 supplement), battery sag 0.2 V at 0.8 A (architecture.md 8.4) | ✅ |
test_line_transients | VCC min, VSYS 4.6 <-> 3.7 V (USB unplug/plug, light), 1.0 mA | 13 V | 12.5 V … – | NHD rev 3 VCC 12.5-13.5 V; line steps: USB unplug / plug-in moves VSYS between SYS_REG 4.6 V and VBAT (BQ25180 SLUSE99C 8.3.3 supplement), battery sag 0.2 V at 0.8 A (architecture.md 8.4) | ✅ |
test_line_transients | VCC max, VSYS 4.6 <-> 3.7 V (USB unplug/plug, light), 1.0 mA | 13 V | – … 13.5 V | NHD rev 3 VCC 12.5-13.5 V; line steps: USB unplug / plug-in moves VSYS between SYS_REG 4.6 V and VBAT (BQ25180 SLUSE99C 8.3.3 supplement), battery sag 0.2 V at 0.8 A (architecture.md 8.4) | ✅ |
test_line_transients | VCC min, VSYS 3.8 <-> 3.6 V (battery sag), 42.0 mA | 13 V | 12.5 V … – | NHD rev 3 VCC 12.5-13.5 V; line steps: USB unplug / plug-in moves VSYS between SYS_REG 4.6 V and VBAT (BQ25180 SLUSE99C 8.3.3 supplement), battery sag 0.2 V at 0.8 A (architecture.md 8.4) | ✅ |
test_line_transients | VCC max, VSYS 3.8 <-> 3.6 V (battery sag), 42.0 mA | 13 V | – … 13.5 V | NHD rev 3 VCC 12.5-13.5 V; line steps: USB unplug / plug-in moves VSYS between SYS_REG 4.6 V and VBAT (BQ25180 SLUSE99C 8.3.3 supplement), battery sag 0.2 V at 0.8 A (architecture.md 8.4) | ✅ |
test_shutdown_vcc_float | VCC max during turn-off, VSYS 4.6 V, 60 C | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_shutdown_vcc_float | VCC 3 ms after turn-off (floats, not pulled toward GND), VSYS 4.6 V, 60 C | 13 V | 3.3 V … – | SSD1351 Rev 1.3 8.9 note (2) VCC floats when off / note (1) held near VCI by ESD path; TPS61040 SLVS413L 6.3.3 (disabled boost passes VIN to VOUT); note (5) never pulled to ground | ✅ |
test_shutdown_vcc_float | VSYS current into U21 while off, VSYS 4.6 V, 60 C | 10 nA | – … 100 nA | TPS22917 SLVSDW8B Table 7.5: ISD,VIN 100 nA max (-40..85 C) | ✅ |
test_shutdown_vcc_float | VCC max during turn-off, VSYS 3.0 V, 25 C | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_shutdown_vcc_float | VCC 3 ms after turn-off (floats, not pulled toward GND), VSYS 3.0 V, 25 C | 13 V | 3.3 V … – | SSD1351 Rev 1.3 8.9 note (2) VCC floats when off / note (1) held near VCI by ESD path; TPS61040 SLVS413L 6.3.3 (disabled boost passes VIN to VOUT); note (5) never pulled to ground | ✅ |
test_shutdown_vcc_float | VSYS current into U21 while off, VSYS 3.0 V, 25 C | 10 nA | – … 100 nA | TPS22917 SLVSDW8B Table 7.5: ISD,VIN 100 nA max (-40..85 C) | ✅ |
test_shutdown_vcc_float | VCC max during turn-off, VSYS 3.0 V, -10 C | 13 V | – … 13.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_shutdown_vcc_float | VCC 3 ms after turn-off (floats, not pulled toward GND), VSYS 3.0 V, -10 C | 13 V | 3.3 V … – | SSD1351 Rev 1.3 8.9 note (2) VCC floats when off / note (1) held near VCI by ESD path; TPS61040 SLVS413L 6.3.3 (disabled boost passes VIN to VOUT); note (5) never pulled to ground | ✅ |
test_shutdown_vcc_float | VSYS current into U21 while off, VSYS 3.0 V, -10 C | 10 nA | – … 100 nA | TPS22917 SLVSDW8B Table 7.5: ISD,VIN 100 nA max (-40..85 C) | ✅ |
test_off_state | VCC with OLED_VCC_EN low, VSYS 4.6 V, 60 C | 2.81 V | – … 3.3 V | SSD1351 Rev 1.3 8.9 note (2) VCC floats when off / note (1) held near VCI by ESD path; TPS61040 SLVS413L 6.3.3 (disabled boost passes VIN to VOUT): must not exceed VCI (+3V3) | ✅ |
test_off_state | FB - OLED_VIN with the boost off, VSYS 4.6 V, 60 C | 261 mV | – … 300 mV | TPS61040 SLVS413L 5.1 abs max: FB <= VIN + 0.3 V (architecture.md risk R31) | ✅ |
test_off_state | VSYS current into U21 with OLED_VCC_EN low, VSYS 4.6 V, 60 C | 10 nA | – … 100 nA | TPS22917 SLVSDW8B Table 7.5: ISD,VIN 100 nA max (-40..85 C) | ✅ |
test_off_state | VCC with OLED_VCC_EN low, VSYS 4.6 V, 25 C | 2.86 V | – … 3.3 V | SSD1351 Rev 1.3 8.9 note (2) VCC floats when off / note (1) held near VCI by ESD path; TPS61040 SLVS413L 6.3.3 (disabled boost passes VIN to VOUT): must not exceed VCI (+3V3) | ✅ |
test_off_state | FB - OLED_VIN with the boost off, VSYS 4.6 V, 25 C | 271 mV | – … 300 mV | TPS61040 SLVS413L 5.1 abs max: FB <= VIN + 0.3 V (architecture.md risk R31) | ✅ |
test_off_state | VSYS current into U21 with OLED_VCC_EN low, VSYS 4.6 V, 25 C | 10 nA | – … 100 nA | TPS22917 SLVSDW8B Table 7.5: ISD,VIN 100 nA max (-40..85 C) | ✅ |
test_off_state | VCC with OLED_VCC_EN low, VSYS 3.0 V, -10 C | 2.88 V | – … 3.3 V | SSD1351 Rev 1.3 8.9 note (2) VCC floats when off / note (1) held near VCI by ESD path; TPS61040 SLVS413L 6.3.3 (disabled boost passes VIN to VOUT): must not exceed VCI (+3V3) | ✅ |
test_off_state | FB - OLED_VIN with the boost off, VSYS 3.0 V, -10 C | 273 mV | – … 300 mV | TPS61040 SLVS413L 5.1 abs max: FB <= VIN + 0.3 V (architecture.md risk R31) | ✅ |
test_off_state | VSYS current into U21 with OLED_VCC_EN low, VSYS 3.0 V, -10 C | 10 nA | – … 100 nA | TPS22917 SLVSDW8B Table 7.5: ISD,VIN 100 nA max (-40..85 C) | ✅ |
test_fault_r27_wrong_value_detected | FAULT R27 = 49.9k: VCC avg must exceed the panel max (detected) | 13.6 V | 13.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_fault_r26_open_detected | FAULT R26 open: VCC peak within 0.5 ms must exceed the panel max (detected) | 18.1 V | 13.5 V … – | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V; SSD1351 Rev 1.3 Table 11-1: VCC abs max 19.0 V | ✅ |
test_fault_l20_wrong_value_detected | FAULT L20 = 1 uH: inductor peak must exceed Isat (detected) | 810 mA | 720 mA … – | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_fault_ct_capacitor_missing_detected | FAULT C37 missing: L20 peak at start-up must exceed Isat (detected) | 1.19 A | 720 mA … – | Sunlord SWPA rev 2019/04/01, SWPA3015S100MT: Isat 0.72 A rated (30 % L drop) | ✅ |
test_fault_output_caps_missing_detected | FAULT C30 + C39 off: effective COUT must fall below 1 uF (detected) | 90 nF | – … 1 µF | TPS61040 SLVS413L 5.3: COUT >= 1 uF | ✅ |
test_fault_cin_missing_detected | FAULT C38 off: CIN at U20 must fall below 4.7 uF (detected) | 0F | – … 4.7 µF | TPS61040 SLVS413L 5.3 CIN 4.7 uF / 7.2.2.5 | ✅ |
test_fault_ct_shorted_detected | FAULT C37 shorted: VCC must not reach 12.5 V within 8 ms (detected) | infs | 8 ms … – | firmware.md 7.2 step 23 (vendor sequence): AFh 200 ms after OLED_VCC_EN, VCC must be in range by then (start-up never completes) | ✅ |
test_fault_r26_bridged_detected | FAULT R26 bridged: VCC after start-up must stay below the panel minimum (detected) | 4.45 V | – … 12.5 V | NHD-1.5-128128G rev 3 Electrical Characteristics: VCC 12.5-13.5 V | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BUZZ_A peak pin current [vbat3.0 HD-max] | 6.17 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BUZZ_B peak pin current [vbat3.0 HD-max] | 6.17 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | sum of BUZZ pin currents [vbat3.0 HD-max] | 12.3 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BZ1 settled swing Vo-p [vbat3.0 HD-max] | 3.06 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BZ1 4 kHz fundamental [vbat3.0 HD-max] | 3.53 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BZ1 peak voltage [vbat3.0 HD-max] | 3.36 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BUZZ pin minimum voltage (piezo ringing) [vbat3.0 HD-max] | -9.2 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-max] | BUZZ pin maximum voltage above VDD [vbat3.0 HD-max] | 9.89 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BUZZ_A peak pin current [vbat3.0 HD-min] | 5.72 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BUZZ_B peak pin current [vbat3.0 HD-min] | 5.72 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | sum of BUZZ pin currents [vbat3.0 HD-min] | 11.4 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BZ1 settled swing Vo-p [vbat3.0 HD-min] | 3.07 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BZ1 4 kHz fundamental [vbat3.0 HD-min] | 3.51 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BZ1 peak voltage [vbat3.0 HD-min] | 3.38 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BUZZ pin minimum voltage (piezo ringing) [vbat3.0 HD-min] | -22.2 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-HD-min] | BUZZ pin maximum voltage above VDD [vbat3.0 HD-min] | 22.2 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BUZZ_A peak pin current [vbat3.0 SD-min] | 3.04 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BUZZ_B peak pin current [vbat3.0 SD-min] | 3.04 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | sum of BUZZ pin currents [vbat3.0 SD-min] | 6.07 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BZ1 settled swing Vo-p [vbat3.0 SD-min] | 3.11 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BZ1 4 kHz fundamental [vbat3.0 SD-min] | 3.27 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BZ1 peak voltage [vbat3.0 SD-min] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BUZZ pin minimum voltage (piezo ringing) [vbat3.0 SD-min] | -93.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[vbat3.0-SD-min] | BUZZ pin maximum voltage above VDD [vbat3.0 SD-min] | 93.8 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BUZZ_A peak pin current [lo HD-max] | 6.67 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BUZZ_B peak pin current [lo HD-max] | 6.67 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | sum of BUZZ pin currents [lo HD-max] | 13.3 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BZ1 settled swing Vo-p [lo HD-max] | 3.31 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BZ1 4 kHz fundamental [lo HD-max] | 3.82 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BZ1 peak voltage [lo HD-max] | 3.64 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BUZZ pin minimum voltage (piezo ringing) [lo HD-max] | -10 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-max] | BUZZ pin maximum voltage above VDD [lo HD-max] | 10.7 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BUZZ_A peak pin current [lo HD-min] | 6.19 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BUZZ_B peak pin current [lo HD-min] | 6.19 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | sum of BUZZ pin currents [lo HD-min] | 12.4 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BZ1 settled swing Vo-p [lo HD-min] | 3.32 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BZ1 4 kHz fundamental [lo HD-min] | 3.79 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BZ1 peak voltage [lo HD-min] | 3.65 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BUZZ pin minimum voltage (piezo ringing) [lo HD-min] | -24.1 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-HD-min] | BUZZ pin maximum voltage above VDD [lo HD-min] | 24.1 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BUZZ_A peak pin current [lo SD-min] | 3.28 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BUZZ_B peak pin current [lo SD-min] | 3.28 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | sum of BUZZ pin currents [lo SD-min] | 6.57 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BZ1 settled swing Vo-p [lo SD-min] | 3.36 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BZ1 4 kHz fundamental [lo SD-min] | 3.54 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BZ1 peak voltage [lo SD-min] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BUZZ pin minimum voltage (piezo ringing) [lo SD-min] | -102 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[lo-SD-min] | BUZZ pin maximum voltage above VDD [lo SD-min] | 102 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BUZZ_A peak pin current [nom HD-max] | 6.81 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BUZZ_B peak pin current [nom HD-max] | 6.81 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | sum of BUZZ pin currents [nom HD-max] | 13.6 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BZ1 settled swing Vo-p [nom HD-max] | 3.38 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BZ1 4 kHz fundamental [nom HD-max] | 3.9 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BZ1 peak voltage [nom HD-max] | 3.71 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BUZZ pin minimum voltage (piezo ringing) [nom HD-max] | -10.3 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-max] | BUZZ pin maximum voltage above VDD [nom HD-max] | 11 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BUZZ_A peak pin current [nom HD-min] | 6.31 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BUZZ_B peak pin current [nom HD-min] | 6.31 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | sum of BUZZ pin currents [nom HD-min] | 12.6 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BZ1 settled swing Vo-p [nom HD-min] | 3.39 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BZ1 4 kHz fundamental [nom HD-min] | 3.87 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BZ1 peak voltage [nom HD-min] | 3.73 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BUZZ pin minimum voltage (piezo ringing) [nom HD-min] | -24.7 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-HD-min] | BUZZ pin maximum voltage above VDD [nom HD-min] | 24.7 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BUZZ_A peak pin current [nom SD-min] | 3.35 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BUZZ_B peak pin current [nom SD-min] | 3.35 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | sum of BUZZ pin currents [nom SD-min] | 6.7 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BZ1 settled swing Vo-p [nom SD-min] | 3.43 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BZ1 4 kHz fundamental [nom SD-min] | 3.61 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BZ1 peak voltage [nom SD-min] | 3.78 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BUZZ pin minimum voltage (piezo ringing) [nom SD-min] | -104 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[nom-SD-min] | BUZZ pin maximum voltage above VDD [nom SD-min] | 104 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BUZZ_A peak pin current [hi HD-max] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BUZZ_B peak pin current [hi HD-max] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | sum of BUZZ pin currents [hi HD-max] | 13.9 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BZ1 settled swing Vo-p [hi HD-max] | 3.45 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BZ1 4 kHz fundamental [hi HD-max] | 3.98 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BZ1 peak voltage [hi HD-max] | 3.79 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BUZZ pin minimum voltage (piezo ringing) [hi HD-max] | -10.5 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-max] | BUZZ pin maximum voltage above VDD [hi HD-max] | 11.2 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BUZZ_A peak pin current [hi HD-min] | 6.44 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BUZZ_B peak pin current [hi HD-min] | 6.44 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | sum of BUZZ pin currents [hi HD-min] | 12.9 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BZ1 settled swing Vo-p [hi HD-min] | 3.45 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BZ1 4 kHz fundamental [hi HD-min] | 3.95 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BZ1 peak voltage [hi HD-min] | 3.8 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BUZZ pin minimum voltage (piezo ringing) [hi HD-min] | -25.2 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-HD-min] | BUZZ pin maximum voltage above VDD [hi HD-min] | 25.2 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BUZZ_A peak pin current [hi SD-min] | 3.42 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BUZZ_B peak pin current [hi SD-min] | 3.42 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | sum of BUZZ pin currents [hi SD-min] | 6.84 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BZ1 settled swing Vo-p [hi SD-min] | 3.5 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BZ1 4 kHz fundamental [hi SD-min] | 3.68 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BZ1 peak voltage [hi SD-min] | 3.85 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BUZZ pin minimum voltage (piezo ringing) [hi SD-min] | -106 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_drive_supply_and_drive_corners[hi-SD-min] | BUZZ pin maximum voltage above VDD [hi SD-min] | 106 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 0 cf×0.7 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 0 cf×0.7 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 0 cf×0.7 strongest] | 13.9 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 0 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 0 cf×0.7 strongest] | -8.41 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 0 cf×0.7 strongest] | 9.01 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 0 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 0 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 0 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 0 cf×0.7 weakest] | -18 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 0 cf×0.7 weakest] | 18 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 0 cf×1.3 strongest] | 7.07 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 0 cf×1.3 strongest] | 7.07 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 0 cf×1.3 strongest] | 14.1 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 0 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 0 cf×1.3 strongest] | -11.9 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 0 cf×1.3 strongest] | 12.7 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 0 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 0 cf×1.3 weakest] | 3.42 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 0 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 0 cf×1.3 weakest] | -24.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 0 cf×1.3 weakest] | 24.8 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 1 cf×0.7 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 1 cf×0.7 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 1 cf×0.7 strongest] | 13.9 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 1 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 1 cf×0.7 strongest] | -8.41 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 1 cf×0.7 strongest] | 9.01 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 1 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 1 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 1 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 1 cf×0.7 weakest] | -18 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 1 cf×0.7 weakest] | 18 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 1 cf×1.3 strongest] | 7.07 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 1 cf×1.3 strongest] | 7.07 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 1 cf×1.3 strongest] | 14.1 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 1 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 1 cf×1.3 strongest] | -11.9 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 1 cf×1.3 strongest] | 12.7 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 1 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 1 cf×1.3 weakest] | 3.42 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 1 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 1 cf×1.3 weakest] | -24.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 1 cf×1.3 weakest] | 24.8 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 2 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 2 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 2 cf×0.7 strongest] | 13.7 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 2 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 2 cf×0.7 strongest] | -8.38 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 2 cf×0.7 strongest] | 8.98 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 2 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 2 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 2 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 2 cf×0.7 weakest] | -18 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 2 cf×0.7 weakest] | 18 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 2 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 2 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 2 cf×1.3 strongest] | 14 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 2 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 2 cf×1.3 strongest] | -11.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 2 cf×1.3 strongest] | 12.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 2 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 2 cf×1.3 weakest] | 3.41 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 2 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 2 cf×1.3 weakest] | -24.6 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 2 cf×1.3 weakest] | 24.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 3 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 3 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 3 cf×0.7 strongest] | 13.7 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 3 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 3 cf×0.7 strongest] | -8.38 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 3 cf×0.7 strongest] | 8.98 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 3 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 3 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 3 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 3 cf×0.7 weakest] | -18 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 3 cf×0.7 weakest] | 18 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 3 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 3 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 3 cf×1.3 strongest] | 14 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 3 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 3 cf×1.3 strongest] | -11.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 3 cf×1.3 strongest] | 12.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 3 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 3 cf×1.3 weakest] | 3.41 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 3 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 3 cf×1.3 weakest] | -24.6 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 3 cf×1.3 weakest] | 24.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 4 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 4 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 4 cf×0.7 strongest] | 13.7 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 4 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 4 cf×0.7 strongest] | -8.38 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 4 cf×0.7 strongest] | 8.98 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 4 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 4 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 4 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 4 cf×0.7 weakest] | -18 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 4 cf×0.7 weakest] | 18 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 4 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 4 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 4 cf×1.3 strongest] | 14 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 4 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 4 cf×1.3 strongest] | -11.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 4 cf×1.3 strongest] | 12.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 4 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 4 cf×1.3 weakest] | 3.41 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 4 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 4 cf×1.3 weakest] | -24.6 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 4 cf×1.3 weakest] | 24.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 5 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 5 cf×0.7 strongest] | 6.87 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 5 cf×0.7 strongest] | 13.7 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 5 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 5 cf×0.7 strongest] | -8.38 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 5 cf×0.7 strongest] | 8.98 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 5 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 5 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 5 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 5 cf×0.7 weakest] | -18 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 5 cf×0.7 weakest] | 18 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 5 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 5 cf×1.3 strongest] | 7.01 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 5 cf×1.3 strongest] | 14 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 5 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 5 cf×1.3 strongest] | -11.8 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 5 cf×1.3 strongest] | 12.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 5 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 5 cf×1.3 weakest] | 3.41 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 5 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 5 cf×1.3 weakest] | -24.6 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 5 cf×1.3 weakest] | 24.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 6 cf×0.7 strongest] | 6.81 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 6 cf×0.7 strongest] | 6.81 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 6 cf×0.7 strongest] | 13.6 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 6 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 6 cf×0.7 strongest] | -8.36 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 6 cf×0.7 strongest] | 8.95 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 6 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 6 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 6 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 6 cf×0.7 weakest] | -17.9 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 6 cf×0.7 weakest] | 17.9 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 6 cf×1.3 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 6 cf×1.3 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 6 cf×1.3 strongest] | 13.9 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 6 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 6 cf×1.3 strongest] | -11.7 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 6 cf×1.3 strongest] | 12.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 6 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 6 cf×1.3 weakest] | 3.41 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 6 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 6 cf×1.3 weakest] | -24.5 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 6 cf×1.3 weakest] | 24.5 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 7 cf×0.7 strongest] | 6.81 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 7 cf×0.7 strongest] | 6.81 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 7 cf×0.7 strongest] | 13.6 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 7 cf×0.7 strongest] | 3.7 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 7 cf×0.7 strongest] | -8.36 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 7 cf×0.7 strongest] | 8.96 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 7 cf×0.7 weakest] | 3.04 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 7 cf×0.7 weakest] | 3.62 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 7 cf×0.7 weakest] | 3.3 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 7 cf×0.7 weakest] | -17.9 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 7 cf×0.7 weakest] | 17.9 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ_A peak pin current [corner 7 cf×1.3 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | BUZZ_B peak pin current [corner 7 cf×1.3 strongest] | 6.94 mA | – … 14 mA | nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_piezo_tolerance_extremes | sum of BUZZ pin currents [corner 7 cf×1.3 strongest] | 13.9 mA | – … 25 mA | nRF52840 PS v1.1 §5.3.8.2 IEXT,HIGH (budget) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 7 cf×1.3 strongest] | 3.84 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 7 cf×1.3 strongest] | -11.7 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 7 cf×1.3 strongest] | 12.6 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_tolerance_extremes | BZ1 settled swing Vo-p [corner 7 cf×1.3 weakest] | 3.1 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BZ1 4 kHz fundamental [corner 7 cf×1.3 weakest] | 3.41 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_tolerance_extremes | BZ1 peak voltage [corner 7 cf×1.3 weakest] | 3.42 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_tolerance_extremes | BUZZ pin minimum voltage (piezo ringing) [corner 7 cf×1.3 weakest] | -24.5 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_tolerance_extremes | BUZZ pin maximum voltage above VDD [corner 7 cf×1.3 weakest] | 24.5 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_motional_sensitivity[4k-strong] | BZ1 settled swing Vo-p [motional ka=0.2 qa=4] | 2.87 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[4k-strong] | BZ1 4 kHz fundamental [motional ka=0.2 qa=4] | 3.14 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_motional_sensitivity[4k-strong] | BZ1 peak voltage [motional ka=0.2 qa=4] | 3.26 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[4k-strong] | BUZZ pin minimum voltage (piezo ringing) [motional ka=0.2 qa=4] | -15.7 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_motional_sensitivity[4k-strong] | BUZZ pin maximum voltage above VDD [motional ka=0.2 qa=4] | 15.7 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_motional_sensitivity[4k-highQ] | BZ1 settled swing Vo-p [motional ka=0.05 qa=15] | 2.99 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[4k-highQ] | BZ1 4 kHz fundamental [motional ka=0.05 qa=15] | 3.37 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_motional_sensitivity[4k-highQ] | BZ1 peak voltage [motional ka=0.05 qa=15] | 3.37 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[4k-highQ] | BUZZ pin minimum voltage (piezo ringing) [motional ka=0.05 qa=15] | -21.7 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_motional_sensitivity[4k-highQ] | BUZZ pin maximum voltage above VDD [motional ka=0.05 qa=15] | 21.8 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_motional_sensitivity[8k-strong] | BZ1 settled swing Vo-p [motional kb=0.6 qb=7] | 3.05 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[8k-strong] | BZ1 4 kHz fundamental [motional kb=0.6 qb=7] | 3.46 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_motional_sensitivity[8k-strong] | BZ1 peak voltage [motional kb=0.6 qb=7] | 3.57 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[8k-strong] | BUZZ pin minimum voltage (piezo ringing) [motional kb=0.6 qb=7] | -33.3 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_motional_sensitivity[8k-strong] | BUZZ pin maximum voltage above VDD [motional kb=0.6 qb=7] | 33.4 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_motional_sensitivity[8k-highQ] | BZ1 settled swing Vo-p [motional kb=0.316 qb=20] | 3.09 V | 1.5 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[8k-highQ] | BZ1 4 kHz fundamental [motional kb=0.316 qb=20] | 3.53 V | 1.91 V … – | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square (fundamental 4/π·1.5 V) | ✅ |
test_piezo_motional_sensitivity[8k-highQ] | BZ1 peak voltage [motional kb=0.316 qb=20] | 3.48 V | – … 12.5 V | Murata PKMCS0909E4000-R1 data sheet (2024-02-26) max input ±12.5 Vo-p | ✅ |
test_piezo_motional_sensitivity[8k-highQ] | BUZZ pin minimum voltage (piezo ringing) [motional kb=0.316 qb=20] | -28.1 mV | -300 mV … – | nRF52840 PS v1.1 Table 173 VI/O min −0.3 V | ✅ |
test_piezo_motional_sensitivity[8k-highQ] | BUZZ pin maximum voltage above VDD [motional kb=0.316 qb=20] | 28.2 mV | – … 300 mV | nRF52840 PS v1.1 Table 173 VI/O max VDD + 0.3 V | ✅ |
test_piezo_bleed_time_constant | BZ1 charge at disconnect | 3.3 V | 3.13 V … – | drive reached +VDD before disconnect | ✅ |
test_piezo_bleed_time_constant | bleed time constant (R59 ∥ BZ1) | 8.99 ms | 8.55 ms … 9.45 ms | closed form R59·C(BZ1) ±5 % (sensors sheet: R59 bleeds BZ1 in sleep) | ✅ |
test_fault_piezo_series_r_100_ohm_per_spec | FAULT R57/R58=100Ω: BUZZ_A peak pin current exceeds limit | 26 mA | 14 mA … – | fault must violate nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_fault_piezo_series_r_100_ohm_per_spec | FAULT R57/R58=100Ω: pin-current sum exceeds budget | 51.9 mA | 25 mA … – | fault must violate PS §5.3.8.2 IEXT,HIGH | ✅ |
test_fault_piezo_series_r_bridged | FAULT R57+R58 bridged: BUZZ_A peak pin current exceeds limit | 37.5 mA | 14 mA … – | fault must violate nRF52840 PS v1.1 §6.9.3.1 IOH,HDH max | ✅ |
test_fault_piezo_bleed_missing | FAULT R59 left off: bleed tau outside closed form | 8.98 s | 9.45 ms … – | fault must violate closed form R59·C(BZ1) | ✅ |
test_fault_piezo_pads_bridged | FAULT BZ_P-BZ_N bridged: BZ1 swing below the rating condition | 0.0V | – … 1.5 V | fault must violate Murata PKMCS0909E4000-R1 data sheet (2024-02-26) SPL condition ±1.5 Vo-p | ✅ |
test_fault_piezo_pads_bridged | FAULT BZ_P-BZ_N bridged: 4 kHz fundamental below the rating condition | 0.0V | – … 1.91 V | fault must violate Murata PKMCS0909E4000-R1 data sheet (2024-02-26) ±1.5 Vo-p square | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % @400k [vbat3.0 nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % @400k [vbat3.0 nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % @400k [vbat3.0 nom R-corner 1] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 1] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % @400k [vbat3.0 nom R-corner 1] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 1] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % @400k [vbat3.0 nom R-corner 2] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 2] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % @400k [vbat3.0 nom R-corner 2] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 2] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % @400k [vbat3.0 nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % @400k [vbat3.0 nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [vbat3.0 nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SCL rise 30-70 % @400k [vbat3.0 worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SDA rise 30-70 % @400k [vbat3.0 worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SCL rise 30-70 % @400k [vbat3.0 worst R-corner 1] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SDA rise 30-70 % @400k [vbat3.0 worst R-corner 1] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SCL rise 30-70 % @400k [vbat3.0 worst R-corner 2] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SDA rise 30-70 % @400k [vbat3.0 worst R-corner 2] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SCL rise 30-70 % @400k [vbat3.0 worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[vbat3.0-worst] | TMAG_SDA rise 30-70 % @400k [vbat3.0 worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % @400k [lo nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [lo nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % @400k [lo nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [lo nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % @400k [lo nom R-corner 1] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [lo nom R-corner 1] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % @400k [lo nom R-corner 1] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [lo nom R-corner 1] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % @400k [lo nom R-corner 2] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [lo nom R-corner 2] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % @400k [lo nom R-corner 2] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [lo nom R-corner 2] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % @400k [lo nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [lo nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % @400k [lo nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [lo nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SCL rise 30-70 % @400k [lo worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SDA rise 30-70 % @400k [lo worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SCL rise 30-70 % @400k [lo worst R-corner 1] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SDA rise 30-70 % @400k [lo worst R-corner 1] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SCL rise 30-70 % @400k [lo worst R-corner 2] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SDA rise 30-70 % @400k [lo worst R-corner 2] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SCL rise 30-70 % @400k [lo worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[lo-worst] | TMAG_SDA rise 30-70 % @400k [lo worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % @400k [nom nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [nom nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % @400k [nom nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [nom nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % @400k [nom nom R-corner 1] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [nom nom R-corner 1] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % @400k [nom nom R-corner 1] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [nom nom R-corner 1] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % @400k [nom nom R-corner 2] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [nom nom R-corner 2] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % @400k [nom nom R-corner 2] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [nom nom R-corner 2] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % @400k [nom nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [nom nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % @400k [nom nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [nom nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SCL rise 30-70 % @400k [nom worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SDA rise 30-70 % @400k [nom worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SCL rise 30-70 % @400k [nom worst R-corner 1] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SDA rise 30-70 % @400k [nom worst R-corner 1] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SCL rise 30-70 % @400k [nom worst R-corner 2] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SDA rise 30-70 % @400k [nom worst R-corner 2] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SCL rise 30-70 % @400k [nom worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[nom-worst] | TMAG_SDA rise 30-70 % @400k [nom worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % @400k [hi nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [hi nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % @400k [hi nom R-corner 0] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [hi nom R-corner 0] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % @400k [hi nom R-corner 1] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [hi nom R-corner 1] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % @400k [hi nom R-corner 1] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [hi nom R-corner 1] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % @400k [hi nom R-corner 2] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [hi nom R-corner 2] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % @400k [hi nom R-corner 2] | 72.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [hi nom R-corner 2] | 72.2 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % @400k [hi nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SCL rise 30-70 % Fm+ headroom [hi nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % @400k [hi nom R-corner 3] | 73.6 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-nom] | TMAG_SDA rise 30-70 % Fm+ headroom [hi nom R-corner 3] | 73.6 ns | – … 120 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm+); TMAG5273 DS SLYS045C ticr_fmp (nRF TWIM itself is limited to 400 kbps) | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SCL rise 30-70 % @400k [hi worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SDA rise 30-70 % @400k [hi worst R-corner 0] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SCL rise 30-70 % @400k [hi worst R-corner 1] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SDA rise 30-70 % @400k [hi worst R-corner 1] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SCL rise 30-70 % @400k [hi worst R-corner 2] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SDA rise 30-70 % @400k [hi worst R-corner 2] | 119 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SCL rise 30-70 % @400k [hi worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_rise_time[hi-worst] | TMAG_SDA rise 30-70 % @400k [hi worst R-corner 3] | 121 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm); TMAG5273 DS SLYS045C Table 5.10 ticr | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG bus VOL, nRF S0D1 SCL [vbat3.0] | 229 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG bus VOL vs VIL, nRF S0D1 SCL [vbat3.0] | 229 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG bus VOL, nRF S0D1 SDA [vbat3.0] | 229 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG bus VOL vs VIL, nRF S0D1 SDA [vbat3.0] | 229 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG bus VOL, TMAG SDA [vbat3.0] | 116 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG bus VOL vs VIL, TMAG SDA [vbat3.0] | 116 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[vbat3.0] | TMAG SDA sink current [vbat3.0] | 618 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT max | ✅ |
test_tmag_bus_vol[lo] | TMAG bus VOL, nRF S0D1 SCL [lo] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[lo] | TMAG bus VOL vs VIL, nRF S0D1 SCL [lo] | 249 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[lo] | TMAG bus VOL, nRF S0D1 SDA [lo] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[lo] | TMAG bus VOL vs VIL, nRF S0D1 SDA [lo] | 249 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[lo] | TMAG bus VOL, TMAG SDA [lo] | 127 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[lo] | TMAG bus VOL vs VIL, TMAG SDA [lo] | 127 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[lo] | TMAG SDA sink current [lo] | 668 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT max | ✅ |
test_tmag_bus_vol[nom] | TMAG bus VOL, nRF S0D1 SCL [nom] | 255 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[nom] | TMAG bus VOL vs VIL, nRF S0D1 SCL [nom] | 255 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[nom] | TMAG bus VOL, nRF S0D1 SDA [nom] | 255 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[nom] | TMAG bus VOL vs VIL, nRF S0D1 SDA [nom] | 255 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[nom] | TMAG bus VOL, TMAG SDA [nom] | 130 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[nom] | TMAG bus VOL vs VIL, TMAG SDA [nom] | 130 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[nom] | TMAG SDA sink current [nom] | 681 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT max | ✅ |
test_tmag_bus_vol[hi] | TMAG bus VOL, nRF S0D1 SCL [hi] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[hi] | TMAG bus VOL vs VIL, nRF S0D1 SCL [hi] | 260 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[hi] | TMAG bus VOL, nRF S0D1 SDA [hi] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[hi] | TMAG bus VOL vs VIL, nRF S0D1 SDA [hi] | 260 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[hi] | TMAG bus VOL, TMAG SDA [hi] | 132 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_tmag_bus_vol[hi] | TMAG bus VOL vs VIL, TMAG SDA [hi] | 132 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD; TMAG5273 DS SLYS045C Table 5.3 VIL 0.3·VCC | ✅ |
test_tmag_bus_vol[hi] | TMAG SDA sink current [hi] | 695 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT max | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG_INT_N low during pulse [vbat3.0 -10°C R52-corner 0] | 11.8 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG_INT_N back above VIH after pulse [vbat3.0 -10°C R52-corner 0] | 1.7 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG INT steady sink current [vbat3.0 -10°C R52-corner 0] | 64 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG INT peak sink current at the edge [vbat3.0 -10°C R52-corner 0] | 4.53 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG_INT_N idle high with leakage [vbat3.0 -10°C R52-corner 0] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG_INT_N low during pulse [vbat3.0 -10°C R52-corner 1] | 11.5 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG_INT_N back above VIH after pulse [vbat3.0 -10°C R52-corner 1] | 1.73 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG INT steady sink current [vbat3.0 -10°C R52-corner 1] | 62.7 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG INT peak sink current at the edge [vbat3.0 -10°C R52-corner 1] | 4.53 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[vbat3.0--10] | TMAG_INT_N idle high with leakage [vbat3.0 -10°C R52-corner 1] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG_INT_N low during pulse [vbat3.0 25°C R52-corner 0] | 11.8 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG_INT_N back above VIH after pulse [vbat3.0 25°C R52-corner 0] | 1.7 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG INT steady sink current [vbat3.0 25°C R52-corner 0] | 64 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG INT peak sink current at the edge [vbat3.0 25°C R52-corner 0] | 4.53 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG_INT_N idle high with leakage [vbat3.0 25°C R52-corner 0] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG_INT_N low during pulse [vbat3.0 25°C R52-corner 1] | 11.5 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG_INT_N back above VIH after pulse [vbat3.0 25°C R52-corner 1] | 1.73 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG INT steady sink current [vbat3.0 25°C R52-corner 1] | 62.7 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG INT peak sink current at the edge [vbat3.0 25°C R52-corner 1] | 4.53 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[vbat3.0-25] | TMAG_INT_N idle high with leakage [vbat3.0 25°C R52-corner 1] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG_INT_N low during pulse [vbat3.0 60°C R52-corner 0] | 11.8 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG_INT_N back above VIH after pulse [vbat3.0 60°C R52-corner 0] | 1.7 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG INT steady sink current [vbat3.0 60°C R52-corner 0] | 64 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG INT peak sink current at the edge [vbat3.0 60°C R52-corner 0] | 4.53 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG_INT_N idle high with leakage [vbat3.0 60°C R52-corner 0] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG_INT_N low during pulse [vbat3.0 60°C R52-corner 1] | 11.5 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG_INT_N back above VIH after pulse [vbat3.0 60°C R52-corner 1] | 1.73 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG INT steady sink current [vbat3.0 60°C R52-corner 1] | 62.7 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG INT peak sink current at the edge [vbat3.0 60°C R52-corner 1] | 4.53 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[vbat3.0-60] | TMAG_INT_N idle high with leakage [vbat3.0 60°C R52-corner 1] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[hi--10] | TMAG_INT_N low during pulse [hi -10°C R52-corner 0] | 13.4 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[hi--10] | TMAG_INT_N back above VIH after pulse [hi -10°C R52-corner 0] | 1.7 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[hi--10] | TMAG INT steady sink current [hi -10°C R52-corner 0] | 72 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[hi--10] | TMAG INT peak sink current at the edge [hi -10°C R52-corner 0] | 5.15 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[hi--10] | TMAG_INT_N idle high with leakage [hi -10°C R52-corner 0] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[hi--10] | TMAG_INT_N low during pulse [hi -10°C R52-corner 1] | 13.2 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[hi--10] | TMAG_INT_N back above VIH after pulse [hi -10°C R52-corner 1] | 1.73 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[hi--10] | TMAG INT steady sink current [hi -10°C R52-corner 1] | 70.6 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[hi--10] | TMAG INT peak sink current at the edge [hi -10°C R52-corner 1] | 5.15 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[hi--10] | TMAG_INT_N idle high with leakage [hi -10°C R52-corner 1] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[hi-25] | TMAG_INT_N low during pulse [hi 25°C R52-corner 0] | 13.4 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[hi-25] | TMAG_INT_N back above VIH after pulse [hi 25°C R52-corner 0] | 1.7 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[hi-25] | TMAG INT steady sink current [hi 25°C R52-corner 0] | 72 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[hi-25] | TMAG INT peak sink current at the edge [hi 25°C R52-corner 0] | 5.15 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[hi-25] | TMAG_INT_N idle high with leakage [hi 25°C R52-corner 0] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[hi-25] | TMAG_INT_N low during pulse [hi 25°C R52-corner 1] | 13.2 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[hi-25] | TMAG_INT_N back above VIH after pulse [hi 25°C R52-corner 1] | 1.73 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[hi-25] | TMAG INT steady sink current [hi 25°C R52-corner 1] | 70.6 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[hi-25] | TMAG INT peak sink current at the edge [hi 25°C R52-corner 1] | 5.15 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[hi-25] | TMAG_INT_N idle high with leakage [hi 25°C R52-corner 1] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[hi-60] | TMAG_INT_N low during pulse [hi 60°C R52-corner 0] | 13.4 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[hi-60] | TMAG_INT_N back above VIH after pulse [hi 60°C R52-corner 0] | 1.7 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[hi-60] | TMAG INT steady sink current [hi 60°C R52-corner 0] | 72 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[hi-60] | TMAG INT peak sink current at the edge [hi 60°C R52-corner 0] | 5.15 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[hi-60] | TMAG_INT_N idle high with leakage [hi 60°C R52-corner 0] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_tmag_int_pulse[hi-60] | TMAG_INT_N low during pulse [hi 60°C R52-corner 1] | 13.1 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_tmag_int_pulse[hi-60] | TMAG_INT_N back above VIH after pulse [hi 60°C R52-corner 1] | 1.73 µs | – … 40 µs | TMAG5273 DS SLYS045C Table 5.11 tmeasure 50 µs typ (shortest INT period) − Table 5.5 tINT 10 µs typ | ✅ |
test_tmag_int_pulse[hi-60] | TMAG INT steady sink current [hi 60°C R52-corner 1] | 70.6 µA | – … 2 mA | TMAG5273 DS SLYS045C Table 5.3 IOUT recommended max | ✅ |
test_tmag_int_pulse[hi-60] | TMAG INT peak sink current at the edge [hi 60°C R52-corner 1] | 5.15 mA | – … 10 mA | TMAG5273 DS SLYS045C Table 5.1 IOUT absolute max | ✅ |
test_tmag_int_pulse[hi-60] | TMAG_INT_N idle high with leakage [hi 60°C R52-corner 1] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (TMAG IOZ 100 nA, TPD ILEAK) | ✅ |
test_fault_tmag_sda_pullup_47k | FAULT R51=47k: TMAG_SDA rise exceeds Fm limit | 731 ns | 300 ns … – | fault must violate NXP UM10204 Rev 7.0 tr | ✅ |
test_fault_tmag_int_pullup_missing | FAULT R52 left off: TMAG_INT_N idle level below VIH | -399 mV | – … 2.31 V | fault must violate nRF52840 PS v1.1 §6.9.3.1 VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 nom R-corner 0] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 nom R-corner 0] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at LIS2DW12 [vbat3.0 nom R-corner 0] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at LIS2DW12 [vbat3.0 nom R-corner 0] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 nom R-corner 0] | 2.82 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at LIS2DW12 [vbat3.0 nom R-corner 0] | 162 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at LIS2DW12 [vbat3.0 nom R-corner 0] | 3.03 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 nom R-corner 0] | 171 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 nom R-corner 0] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at BQ25180 [vbat3.0 nom R-corner 0] | 560 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at BQ25180 [vbat3.0 nom R-corner 0] | 992 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 nom R-corner 0] | 2.87 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at BQ25180 [vbat3.0 nom R-corner 0] | 208 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at BQ25180 [vbat3.0 nom R-corner 0] | 3.08 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 nom R-corner 1] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 nom R-corner 1] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at LIS2DW12 [vbat3.0 nom R-corner 1] | 426 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at LIS2DW12 [vbat3.0 nom R-corner 1] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 nom R-corner 1] | 2.82 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at LIS2DW12 [vbat3.0 nom R-corner 1] | 158 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at LIS2DW12 [vbat3.0 nom R-corner 1] | 3.03 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 nom R-corner 1] | 171 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 nom R-corner 1] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at BQ25180 [vbat3.0 nom R-corner 1] | 555 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at BQ25180 [vbat3.0 nom R-corner 1] | 992 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 nom R-corner 1] | 2.87 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at BQ25180 [vbat3.0 nom R-corner 1] | 203 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at BQ25180 [vbat3.0 nom R-corner 1] | 3.07 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 nom R-corner 2] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 nom R-corner 2] | 22.4 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at LIS2DW12 [vbat3.0 nom R-corner 2] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at LIS2DW12 [vbat3.0 nom R-corner 2] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 nom R-corner 2] | 2.82 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at LIS2DW12 [vbat3.0 nom R-corner 2] | 160 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at LIS2DW12 [vbat3.0 nom R-corner 2] | 3.03 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 nom R-corner 2] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 nom R-corner 2] | 23.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at BQ25180 [vbat3.0 nom R-corner 2] | 562 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at BQ25180 [vbat3.0 nom R-corner 2] | 987 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 nom R-corner 2] | 2.87 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at BQ25180 [vbat3.0 nom R-corner 2] | 205 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at BQ25180 [vbat3.0 nom R-corner 2] | 3.08 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 nom R-corner 3] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 nom R-corner 3] | 22.4 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at LIS2DW12 [vbat3.0 nom R-corner 3] | 427 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at LIS2DW12 [vbat3.0 nom R-corner 3] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 nom R-corner 3] | 2.82 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at LIS2DW12 [vbat3.0 nom R-corner 3] | 158 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at LIS2DW12 [vbat3.0 nom R-corner 3] | 3.03 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 nom R-corner 3] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 nom R-corner 3] | 23.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tSU;DAT at BQ25180 [vbat3.0 nom R-corner 3] | 557 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C tHIGH at BQ25180 [vbat3.0 nom R-corner 3] | 987 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 nom R-corner 3] | 2.87 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C undershoot at BQ25180 [vbat3.0 nom R-corner 3] | 203 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-nom] | I2C overshoot at BQ25180 [vbat3.0 nom R-corner 3] | 3.07 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 worst R-corner 0] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 worst R-corner 0] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at LIS2DW12 [vbat3.0 worst R-corner 0] | 236 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at LIS2DW12 [vbat3.0 worst R-corner 0] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 worst R-corner 0] | 2.81 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at LIS2DW12 [vbat3.0 worst R-corner 0] | 151 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at LIS2DW12 [vbat3.0 worst R-corner 0] | 3 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 worst R-corner 0] | 271 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 worst R-corner 0] | 37.1 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at BQ25180 [vbat3.0 worst R-corner 0] | 441 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at BQ25180 [vbat3.0 worst R-corner 0] | 868 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 worst R-corner 0] | 2.85 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at BQ25180 [vbat3.0 worst R-corner 0] | 195 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at BQ25180 [vbat3.0 worst R-corner 0] | 3.05 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 worst R-corner 1] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 worst R-corner 1] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at LIS2DW12 [vbat3.0 worst R-corner 1] | 224 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at LIS2DW12 [vbat3.0 worst R-corner 1] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 worst R-corner 1] | 2.81 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at LIS2DW12 [vbat3.0 worst R-corner 1] | 146 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at LIS2DW12 [vbat3.0 worst R-corner 1] | 3 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 worst R-corner 1] | 271 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 worst R-corner 1] | 37.1 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at BQ25180 [vbat3.0 worst R-corner 1] | 432 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at BQ25180 [vbat3.0 worst R-corner 1] | 868 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 worst R-corner 1] | 2.85 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at BQ25180 [vbat3.0 worst R-corner 1] | 191 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at BQ25180 [vbat3.0 worst R-corner 1] | 3.04 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 worst R-corner 2] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 worst R-corner 2] | 36.1 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at LIS2DW12 [vbat3.0 worst R-corner 2] | 237 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at LIS2DW12 [vbat3.0 worst R-corner 2] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 worst R-corner 2] | 2.81 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at LIS2DW12 [vbat3.0 worst R-corner 2] | 149 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at LIS2DW12 [vbat3.0 worst R-corner 2] | 3 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 worst R-corner 2] | 277 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 worst R-corner 2] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at BQ25180 [vbat3.0 worst R-corner 2] | 443 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at BQ25180 [vbat3.0 worst R-corner 2] | 860 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 worst R-corner 2] | 2.85 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at BQ25180 [vbat3.0 worst R-corner 2] | 194 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at BQ25180 [vbat3.0 worst R-corner 2] | 3.05 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [vbat3.0 worst R-corner 3] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [vbat3.0 worst R-corner 3] | 36.1 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at LIS2DW12 [vbat3.0 worst R-corner 3] | 225 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at LIS2DW12 [vbat3.0 worst R-corner 3] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [vbat3.0 worst R-corner 3] | 2.81 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at LIS2DW12 [vbat3.0 worst R-corner 3] | 146 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at LIS2DW12 [vbat3.0 worst R-corner 3] | 3 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL rise 30-70 % at BQ25180 [vbat3.0 worst R-corner 3] | 277 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SCL fall 70-30 % at BQ25180 [vbat3.0 worst R-corner 3] | 37 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tSU;DAT at BQ25180 [vbat3.0 worst R-corner 3] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C tHIGH at BQ25180 [vbat3.0 worst R-corner 3] | 860 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [vbat3.0 worst R-corner 3] | 2.85 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C undershoot at BQ25180 [vbat3.0 worst R-corner 3] | 191 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[vbat3.0-worst] | I2C overshoot at BQ25180 [vbat3.0 worst R-corner 3] | 3.04 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [lo nom R-corner 0] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [lo nom R-corner 0] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at LIS2DW12 [lo nom R-corner 0] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at LIS2DW12 [lo nom R-corner 0] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo nom R-corner 0] | 3.06 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at LIS2DW12 [lo nom R-corner 0] | 177 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at LIS2DW12 [lo nom R-corner 0] | 3.28 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at BQ25180 [lo nom R-corner 0] | 172 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at BQ25180 [lo nom R-corner 0] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at BQ25180 [lo nom R-corner 0] | 560 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at BQ25180 [lo nom R-corner 0] | 991 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo nom R-corner 0] | 3.1 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at BQ25180 [lo nom R-corner 0] | 222 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at BQ25180 [lo nom R-corner 0] | 3.32 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [lo nom R-corner 1] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [lo nom R-corner 1] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at LIS2DW12 [lo nom R-corner 1] | 426 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at LIS2DW12 [lo nom R-corner 1] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo nom R-corner 1] | 3.05 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at LIS2DW12 [lo nom R-corner 1] | 172 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at LIS2DW12 [lo nom R-corner 1] | 3.28 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at BQ25180 [lo nom R-corner 1] | 172 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at BQ25180 [lo nom R-corner 1] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at BQ25180 [lo nom R-corner 1] | 555 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at BQ25180 [lo nom R-corner 1] | 991 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo nom R-corner 1] | 3.1 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at BQ25180 [lo nom R-corner 1] | 218 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at BQ25180 [lo nom R-corner 1] | 3.32 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [lo nom R-corner 2] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [lo nom R-corner 2] | 22.4 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at LIS2DW12 [lo nom R-corner 2] | 435 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at LIS2DW12 [lo nom R-corner 2] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo nom R-corner 2] | 3.06 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at LIS2DW12 [lo nom R-corner 2] | 174 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at LIS2DW12 [lo nom R-corner 2] | 3.28 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at BQ25180 [lo nom R-corner 2] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at BQ25180 [lo nom R-corner 2] | 23.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at BQ25180 [lo nom R-corner 2] | 561 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at BQ25180 [lo nom R-corner 2] | 986 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo nom R-corner 2] | 3.1 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at BQ25180 [lo nom R-corner 2] | 219 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at BQ25180 [lo nom R-corner 2] | 3.32 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [lo nom R-corner 3] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [lo nom R-corner 3] | 22.4 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at LIS2DW12 [lo nom R-corner 3] | 427 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at LIS2DW12 [lo nom R-corner 3] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo nom R-corner 3] | 3.05 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at LIS2DW12 [lo nom R-corner 3] | 172 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at LIS2DW12 [lo nom R-corner 3] | 3.28 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL rise 30-70 % at BQ25180 [lo nom R-corner 3] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SCL fall 70-30 % at BQ25180 [lo nom R-corner 3] | 23.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-nom] | I2C tSU;DAT at BQ25180 [lo nom R-corner 3] | 556 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-nom] | I2C tHIGH at BQ25180 [lo nom R-corner 3] | 987 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo nom R-corner 3] | 3.1 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-nom] | I2C undershoot at BQ25180 [lo nom R-corner 3] | 217 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-nom] | I2C overshoot at BQ25180 [lo nom R-corner 3] | 3.32 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [lo worst R-corner 0] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [lo worst R-corner 0] | 36.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at LIS2DW12 [lo worst R-corner 0] | 236 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at LIS2DW12 [lo worst R-corner 0] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo worst R-corner 0] | 3.04 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at LIS2DW12 [lo worst R-corner 0] | 164 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at LIS2DW12 [lo worst R-corner 0] | 3.25 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at BQ25180 [lo worst R-corner 0] | 272 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at BQ25180 [lo worst R-corner 0] | 37.1 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at BQ25180 [lo worst R-corner 0] | 440 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at BQ25180 [lo worst R-corner 0] | 867 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo worst R-corner 0] | 3.08 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at BQ25180 [lo worst R-corner 0] | 209 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at BQ25180 [lo worst R-corner 0] | 3.29 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [lo worst R-corner 1] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [lo worst R-corner 1] | 36.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at LIS2DW12 [lo worst R-corner 1] | 224 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at LIS2DW12 [lo worst R-corner 1] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo worst R-corner 1] | 3.04 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at LIS2DW12 [lo worst R-corner 1] | 159 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at LIS2DW12 [lo worst R-corner 1] | 3.24 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at BQ25180 [lo worst R-corner 1] | 272 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at BQ25180 [lo worst R-corner 1] | 37.1 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at BQ25180 [lo worst R-corner 1] | 432 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at BQ25180 [lo worst R-corner 1] | 867 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo worst R-corner 1] | 3.08 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at BQ25180 [lo worst R-corner 1] | 204 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at BQ25180 [lo worst R-corner 1] | 3.29 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [lo worst R-corner 2] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [lo worst R-corner 2] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at LIS2DW12 [lo worst R-corner 2] | 238 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at LIS2DW12 [lo worst R-corner 2] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo worst R-corner 2] | 3.04 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at LIS2DW12 [lo worst R-corner 2] | 163 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at LIS2DW12 [lo worst R-corner 2] | 3.25 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at BQ25180 [lo worst R-corner 2] | 277 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at BQ25180 [lo worst R-corner 2] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at BQ25180 [lo worst R-corner 2] | 442 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at BQ25180 [lo worst R-corner 2] | 859 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo worst R-corner 2] | 3.08 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at BQ25180 [lo worst R-corner 2] | 207 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at BQ25180 [lo worst R-corner 2] | 3.29 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [lo worst R-corner 3] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [lo worst R-corner 3] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at LIS2DW12 [lo worst R-corner 3] | 226 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at LIS2DW12 [lo worst R-corner 3] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [lo worst R-corner 3] | 3.04 V | 2.59 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at LIS2DW12 [lo worst R-corner 3] | 159 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at LIS2DW12 [lo worst R-corner 3] | 3.24 V | – … 3.53 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL rise 30-70 % at BQ25180 [lo worst R-corner 3] | 277 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SCL fall 70-30 % at BQ25180 [lo worst R-corner 3] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[lo-worst] | I2C tSU;DAT at BQ25180 [lo worst R-corner 3] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[lo-worst] | I2C tHIGH at BQ25180 [lo worst R-corner 3] | 859 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[lo-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [lo worst R-corner 3] | 3.08 V | 2.26 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[lo-worst] | I2C undershoot at BQ25180 [lo worst R-corner 3] | 204 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[lo-worst] | I2C overshoot at BQ25180 [lo worst R-corner 3] | 3.29 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [nom nom R-corner 0] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [nom nom R-corner 0] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at LIS2DW12 [nom nom R-corner 0] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at LIS2DW12 [nom nom R-corner 0] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom nom R-corner 0] | 3.12 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at LIS2DW12 [nom nom R-corner 0] | 181 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at LIS2DW12 [nom nom R-corner 0] | 3.35 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at BQ25180 [nom nom R-corner 0] | 172 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at BQ25180 [nom nom R-corner 0] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at BQ25180 [nom nom R-corner 0] | 560 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at BQ25180 [nom nom R-corner 0] | 991 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom nom R-corner 0] | 3.16 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at BQ25180 [nom nom R-corner 0] | 226 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at BQ25180 [nom nom R-corner 0] | 3.39 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [nom nom R-corner 1] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [nom nom R-corner 1] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at LIS2DW12 [nom nom R-corner 1] | 426 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at LIS2DW12 [nom nom R-corner 1] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom nom R-corner 1] | 3.12 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at LIS2DW12 [nom nom R-corner 1] | 176 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at LIS2DW12 [nom nom R-corner 1] | 3.34 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at BQ25180 [nom nom R-corner 1] | 172 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at BQ25180 [nom nom R-corner 1] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at BQ25180 [nom nom R-corner 1] | 555 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at BQ25180 [nom nom R-corner 1] | 991 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom nom R-corner 1] | 3.16 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at BQ25180 [nom nom R-corner 1] | 221 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at BQ25180 [nom nom R-corner 1] | 3.39 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [nom nom R-corner 2] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [nom nom R-corner 2] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at LIS2DW12 [nom nom R-corner 2] | 435 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at LIS2DW12 [nom nom R-corner 2] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom nom R-corner 2] | 3.12 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at LIS2DW12 [nom nom R-corner 2] | 178 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at LIS2DW12 [nom nom R-corner 2] | 3.35 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at BQ25180 [nom nom R-corner 2] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at BQ25180 [nom nom R-corner 2] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at BQ25180 [nom nom R-corner 2] | 561 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at BQ25180 [nom nom R-corner 2] | 986 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom nom R-corner 2] | 3.16 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at BQ25180 [nom nom R-corner 2] | 223 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at BQ25180 [nom nom R-corner 2] | 3.39 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [nom nom R-corner 3] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [nom nom R-corner 3] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at LIS2DW12 [nom nom R-corner 3] | 427 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at LIS2DW12 [nom nom R-corner 3] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom nom R-corner 3] | 3.12 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at LIS2DW12 [nom nom R-corner 3] | 176 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at LIS2DW12 [nom nom R-corner 3] | 3.34 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL rise 30-70 % at BQ25180 [nom nom R-corner 3] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SCL fall 70-30 % at BQ25180 [nom nom R-corner 3] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-nom] | I2C tSU;DAT at BQ25180 [nom nom R-corner 3] | 556 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-nom] | I2C tHIGH at BQ25180 [nom nom R-corner 3] | 986 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom nom R-corner 3] | 3.16 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-nom] | I2C undershoot at BQ25180 [nom nom R-corner 3] | 221 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-nom] | I2C overshoot at BQ25180 [nom nom R-corner 3] | 3.39 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [nom worst R-corner 0] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [nom worst R-corner 0] | 36.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at LIS2DW12 [nom worst R-corner 0] | 236 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at LIS2DW12 [nom worst R-corner 0] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom worst R-corner 0] | 3.1 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at LIS2DW12 [nom worst R-corner 0] | 168 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at LIS2DW12 [nom worst R-corner 0] | 3.31 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at BQ25180 [nom worst R-corner 0] | 272 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at BQ25180 [nom worst R-corner 0] | 37 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at BQ25180 [nom worst R-corner 0] | 440 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at BQ25180 [nom worst R-corner 0] | 866 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom worst R-corner 0] | 3.14 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at BQ25180 [nom worst R-corner 0] | 212 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at BQ25180 [nom worst R-corner 0] | 3.36 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [nom worst R-corner 1] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [nom worst R-corner 1] | 36.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at LIS2DW12 [nom worst R-corner 1] | 224 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at LIS2DW12 [nom worst R-corner 1] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom worst R-corner 1] | 3.1 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at LIS2DW12 [nom worst R-corner 1] | 163 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at LIS2DW12 [nom worst R-corner 1] | 3.31 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at BQ25180 [nom worst R-corner 1] | 272 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at BQ25180 [nom worst R-corner 1] | 37 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at BQ25180 [nom worst R-corner 1] | 431 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at BQ25180 [nom worst R-corner 1] | 866 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom worst R-corner 1] | 3.14 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at BQ25180 [nom worst R-corner 1] | 207 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at BQ25180 [nom worst R-corner 1] | 3.36 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [nom worst R-corner 2] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [nom worst R-corner 2] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at LIS2DW12 [nom worst R-corner 2] | 238 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at LIS2DW12 [nom worst R-corner 2] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom worst R-corner 2] | 3.1 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at LIS2DW12 [nom worst R-corner 2] | 166 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at LIS2DW12 [nom worst R-corner 2] | 3.31 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at BQ25180 [nom worst R-corner 2] | 278 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at BQ25180 [nom worst R-corner 2] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at BQ25180 [nom worst R-corner 2] | 442 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at BQ25180 [nom worst R-corner 2] | 858 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom worst R-corner 2] | 3.14 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at BQ25180 [nom worst R-corner 2] | 211 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at BQ25180 [nom worst R-corner 2] | 3.36 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [nom worst R-corner 3] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [nom worst R-corner 3] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at LIS2DW12 [nom worst R-corner 3] | 226 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at LIS2DW12 [nom worst R-corner 3] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [nom worst R-corner 3] | 3.1 V | 2.64 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at LIS2DW12 [nom worst R-corner 3] | 163 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at LIS2DW12 [nom worst R-corner 3] | 3.31 V | – … 3.6 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL rise 30-70 % at BQ25180 [nom worst R-corner 3] | 277 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SCL fall 70-30 % at BQ25180 [nom worst R-corner 3] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[nom-worst] | I2C tSU;DAT at BQ25180 [nom worst R-corner 3] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[nom-worst] | I2C tHIGH at BQ25180 [nom worst R-corner 3] | 859 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[nom-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [nom worst R-corner 3] | 3.14 V | 2.31 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[nom-worst] | I2C undershoot at BQ25180 [nom worst R-corner 3] | 207 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[nom-worst] | I2C overshoot at BQ25180 [nom worst R-corner 3] | 3.36 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [hi nom R-corner 0] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [hi nom R-corner 0] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at LIS2DW12 [hi nom R-corner 0] | 434 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at LIS2DW12 [hi nom R-corner 0] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi nom R-corner 0] | 3.18 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at LIS2DW12 [hi nom R-corner 0] | 185 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at LIS2DW12 [hi nom R-corner 0] | 3.41 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at BQ25180 [hi nom R-corner 0] | 172 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at BQ25180 [hi nom R-corner 0] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at BQ25180 [hi nom R-corner 0] | 560 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at BQ25180 [hi nom R-corner 0] | 991 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi nom R-corner 0] | 3.23 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at BQ25180 [hi nom R-corner 0] | 230 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at BQ25180 [hi nom R-corner 0] | 3.46 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [hi nom R-corner 1] | 177 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [hi nom R-corner 1] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at LIS2DW12 [hi nom R-corner 1] | 426 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at LIS2DW12 [hi nom R-corner 1] | 892 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi nom R-corner 1] | 3.18 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at LIS2DW12 [hi nom R-corner 1] | 180 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at LIS2DW12 [hi nom R-corner 1] | 3.41 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at BQ25180 [hi nom R-corner 1] | 172 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at BQ25180 [hi nom R-corner 1] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at BQ25180 [hi nom R-corner 1] | 554 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at BQ25180 [hi nom R-corner 1] | 991 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi nom R-corner 1] | 3.23 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at BQ25180 [hi nom R-corner 1] | 225 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at BQ25180 [hi nom R-corner 1] | 3.46 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [hi nom R-corner 2] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [hi nom R-corner 2] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at LIS2DW12 [hi nom R-corner 2] | 435 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at LIS2DW12 [hi nom R-corner 2] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi nom R-corner 2] | 3.18 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at LIS2DW12 [hi nom R-corner 2] | 182 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at LIS2DW12 [hi nom R-corner 2] | 3.41 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at BQ25180 [hi nom R-corner 2] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at BQ25180 [hi nom R-corner 2] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at BQ25180 [hi nom R-corner 2] | 561 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at BQ25180 [hi nom R-corner 2] | 986 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi nom R-corner 2] | 3.23 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at BQ25180 [hi nom R-corner 2] | 227 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at BQ25180 [hi nom R-corner 2] | 3.46 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at LIS2DW12 [hi nom R-corner 3] | 181 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at LIS2DW12 [hi nom R-corner 3] | 22.5 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at LIS2DW12 [hi nom R-corner 3] | 427 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at LIS2DW12 [hi nom R-corner 3] | 885 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi nom R-corner 3] | 3.18 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at LIS2DW12 [hi nom R-corner 3] | 180 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at LIS2DW12 [hi nom R-corner 3] | 3.41 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL rise 30-70 % at BQ25180 [hi nom R-corner 3] | 175 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SCL fall 70-30 % at BQ25180 [hi nom R-corner 3] | 23.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-nom] | I2C tSU;DAT at BQ25180 [hi nom R-corner 3] | 556 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-nom] | I2C tHIGH at BQ25180 [hi nom R-corner 3] | 986 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi nom R-corner 3] | 3.22 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-nom] | I2C undershoot at BQ25180 [hi nom R-corner 3] | 225 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-nom] | I2C overshoot at BQ25180 [hi nom R-corner 3] | 3.46 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [hi worst R-corner 0] | 281 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [hi worst R-corner 0] | 36.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at LIS2DW12 [hi worst R-corner 0] | 236 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at LIS2DW12 [hi worst R-corner 0] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi worst R-corner 0] | 3.16 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at LIS2DW12 [hi worst R-corner 0] | 171 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at LIS2DW12 [hi worst R-corner 0] | 3.38 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at BQ25180 [hi worst R-corner 0] | 272 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at BQ25180 [hi worst R-corner 0] | 37 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at BQ25180 [hi worst R-corner 0] | 440 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at BQ25180 [hi worst R-corner 0] | 866 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi worst R-corner 0] | 3.21 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at BQ25180 [hi worst R-corner 0] | 216 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at BQ25180 [hi worst R-corner 0] | 3.42 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [hi worst R-corner 1] | 280 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [hi worst R-corner 1] | 36.3 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at LIS2DW12 [hi worst R-corner 1] | 224 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at LIS2DW12 [hi worst R-corner 1] | 708 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi worst R-corner 1] | 3.16 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at LIS2DW12 [hi worst R-corner 1] | 167 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at LIS2DW12 [hi worst R-corner 1] | 3.38 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at BQ25180 [hi worst R-corner 1] | 272 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at BQ25180 [hi worst R-corner 1] | 37 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at BQ25180 [hi worst R-corner 1] | 431 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at BQ25180 [hi worst R-corner 1] | 866 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi worst R-corner 1] | 3.21 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at BQ25180 [hi worst R-corner 1] | 211 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at BQ25180 [hi worst R-corner 1] | 3.42 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [hi worst R-corner 2] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [hi worst R-corner 2] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at LIS2DW12 [hi worst R-corner 2] | 238 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at LIS2DW12 [hi worst R-corner 2] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi worst R-corner 2] | 3.16 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at LIS2DW12 [hi worst R-corner 2] | 170 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at LIS2DW12 [hi worst R-corner 2] | 3.38 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at BQ25180 [hi worst R-corner 2] | 278 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at BQ25180 [hi worst R-corner 2] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at BQ25180 [hi worst R-corner 2] | 442 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at BQ25180 [hi worst R-corner 2] | 858 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi worst R-corner 2] | 3.21 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at BQ25180 [hi worst R-corner 2] | 215 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at BQ25180 [hi worst R-corner 2] | 3.42 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at LIS2DW12 [hi worst R-corner 3] | 286 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at LIS2DW12 [hi worst R-corner 3] | 36.2 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at LIS2DW12 [hi worst R-corner 3] | 226 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points); master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at LIS2DW12 [hi worst R-corner 3] | 697 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11; LIS2DW12 DS11811 Rev 8 Table 7 (0.2/0.8·VDD_IO points) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12 [hi worst R-corner 3] | 3.16 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at LIS2DW12 [hi worst R-corner 3] | 166 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at LIS2DW12 [hi worst R-corner 3] | 3.38 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL rise 30-70 % at BQ25180 [hi worst R-corner 3] | 278 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tr (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SCL fall 70-30 % at BQ25180 [hi worst R-corner 3] | 36.9 ns | – … 300 ns | NXP UM10204 Rev 7.0 Table 11 tf (Fm) | ✅ |
test_system_bus_transaction[hi-worst] | I2C tSU;DAT at BQ25180 [hi worst R-corner 3] | 433 ns | 100 ns … – | NXP UM10204 Rev 7.0 Table 11; master SDA edge at nRF PS §6.31.8.2 tTWIM,HD_DAT 500 ns after SCL falls | ✅ |
test_system_bus_transaction[hi-worst] | I2C tHIGH at BQ25180 [hi worst R-corner 3] | 858 ns | 600 ns … – | NXP UM10204 Rev 7.0 Table 11 | ✅ |
test_system_bus_transaction[hi-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180 [hi worst R-corner 3] | 3.21 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_transaction[hi-worst] | I2C undershoot at BQ25180 [hi worst R-corner 3] | 211 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12, BQ25180 §7.1) | ✅ |
test_system_bus_transaction[hi-worst] | I2C overshoot at BQ25180 [hi worst R-corner 3] | 3.42 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_fast_edges[vbat3.0-nom] | I2C undershoot at LIS2DW12, fast edge [vbat3.0 nom nRF SD-max] | -11.4 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[vbat3.0-nom] | I2C overshoot at LIS2DW12, fast edge [vbat3.0 nom nRF SD-max] | 3.03 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_fast_edges[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12, fast edge [vbat3.0 nom nRF SD-max] | 2.78 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[vbat3.0-nom] | I2C undershoot at BQ25180, fast edge [vbat3.0 nom nRF SD-max] | -7.29 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[vbat3.0-nom] | I2C overshoot at BQ25180, fast edge [vbat3.0 nom nRF SD-max] | 3.03 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_fast_edges[vbat3.0-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180, fast edge [vbat3.0 nom nRF SD-max] | 2.78 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[vbat3.0-worst] | I2C undershoot at LIS2DW12, fast edge [vbat3.0 worst nRF SD-max] | -23.8 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[vbat3.0-worst] | I2C overshoot at LIS2DW12, fast edge [vbat3.0 worst nRF SD-max] | 3 V | – … 3.29 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_fast_edges[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12, fast edge [vbat3.0 worst nRF SD-max] | 2.75 V | 2.39 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[vbat3.0-worst] | I2C undershoot at BQ25180, fast edge [vbat3.0 worst nRF SD-max] | -26.4 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[vbat3.0-worst] | I2C overshoot at BQ25180, fast edge [vbat3.0 worst nRF SD-max] | 3 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_fast_edges[vbat3.0-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180, fast edge [vbat3.0 worst nRF SD-max] | 2.75 V | 2.09 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[hi-nom] | I2C undershoot at LIS2DW12, fast edge [hi nom nRF SD-max] | -12.2 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[hi-nom] | I2C overshoot at LIS2DW12, fast edge [hi nom nRF SD-max] | 3.42 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_fast_edges[hi-nom] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12, fast edge [hi nom nRF SD-max] | 3.13 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[hi-nom] | I2C undershoot at BQ25180, fast edge [hi nom nRF SD-max] | -7.65 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[hi-nom] | I2C overshoot at BQ25180, fast edge [hi nom nRF SD-max] | 3.42 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_fast_edges[hi-nom] | I2C_SDA crosstalk dip at SCL fall, BQ25180, fast edge [hi nom nRF SD-max] | 3.13 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[hi-worst] | I2C undershoot at LIS2DW12, fast edge [hi worst nRF SD-max] | -26.8 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[hi-worst] | I2C overshoot at LIS2DW12, fast edge [hi worst nRF SD-max] | 3.38 V | – … 3.67 V | LIS2DW12 DS11811 Table 9 Vin ≤ Vdd_IO + 0.3 V; nRF PS Table 173 VDD + 0.3 V | ✅ |
test_system_bus_fast_edges[hi-worst] | I2C_SDA crosstalk dip at SCL fall, LIS2DW12, fast edge [hi worst nRF SD-max] | 3.1 V | 2.69 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_system_bus_fast_edges[hi-worst] | I2C undershoot at BQ25180, fast edge [hi worst nRF SD-max] | -29.4 mV | -300 mV … – | abs max −0.3 V (nRF PS Table 173, LIS2DW12 Table 9, BQ25180 §7.1) | ✅ |
test_system_bus_fast_edges[hi-worst] | I2C overshoot at BQ25180, fast edge [hi worst nRF SD-max] | 3.38 V | – … 5.5 V | BQ25180 DS SLUSE99C §7.1 all other pins 5.5 V | ✅ |
test_system_bus_fast_edges[hi-worst] | I2C_SDA crosstalk dip at SCL fall, BQ25180, fast edge [hi worst nRF SD-max] | 3.1 V | 2.36 V … – | NXP UM10204 Rev 7.0 Table 11 VnH 0.2·VDD / receiver VIH | ✅ |
test_twim_tlow_400k_errata219 | TMAG_SCL tLOW at TMAG5273, TWIM0 @400k [vbat3.0 nom nRF SD-min] | 1.26 µs | 1.3 µs … – | TMAG5273 DS SLYS045C Table 5.10 twlow 1300 ns (0.3·VCC, Table 5.3 VIL); NXP UM10204 Rev 7.0 Table 11 tLOW; OLD firmware: I2C_BITRATE_FAST on i2c0 and i2c1 | ❌ |
test_twim_tlow_errata219_remedy | TMAG_SCL tLOW at TMAG5273, TWIM0 @390k [vbat3.0 nom nRF SD-min] | 1.31 µs | 1.3 µs … – | TMAG5273 DS SLYS045C Table 5.10 twlow 1300 ns (0.3·VCC, Table 5.3 VIL); NXP UM10204 Rev 7.0 Table 11 tLOW; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at LIS2DW12, TWIM1 @250k [vbat3.0 nom nRF SD-min] | 1.98 µs | 1.3 µs … – | LIS2DW12 DS11811 Rev 8 Table 7 tw(SCLL) 1.3 µs at the 0.2·Vdd_IO point (Table 7 note); NXP UM10204 Rev 7.0 Table 11; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at BQ25180, TWIM1 @250k [vbat3.0 nom nRF SD-min] | 2.02 µs | 1.3 µs … – | NXP UM10204 Rev 7.0 Table 11 tLOW 1.3 µs (Fm, 0.3·VDD); BQ25180 DS SLUSE99C §8.3.14 F/S-mode device; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | TMAG_SCL tLOW at TMAG5273, TWIM0 @390k [hi nom nRF SD-min] | 1.31 µs | 1.3 µs … – | TMAG5273 DS SLYS045C Table 5.10 twlow 1300 ns (0.3·VCC, Table 5.3 VIL); NXP UM10204 Rev 7.0 Table 11 tLOW; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at LIS2DW12, TWIM1 @250k [hi nom nRF SD-min] | 1.98 µs | 1.3 µs … – | LIS2DW12 DS11811 Rev 8 Table 7 tw(SCLL) 1.3 µs at the 0.2·Vdd_IO point (Table 7 note); NXP UM10204 Rev 7.0 Table 11; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at BQ25180, TWIM1 @250k [hi nom nRF SD-min] | 2.02 µs | 1.3 µs … – | NXP UM10204 Rev 7.0 Table 11 tLOW 1.3 µs (Fm, 0.3·VDD); BQ25180 DS SLUSE99C §8.3.14 F/S-mode device; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | TMAG_SCL tLOW at TMAG5273, TWIM0 @390k [vbat3.0 worst nRF SD-min] | 1.31 µs | 1.3 µs … – | TMAG5273 DS SLYS045C Table 5.10 twlow 1300 ns (0.3·VCC, Table 5.3 VIL); NXP UM10204 Rev 7.0 Table 11 tLOW; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at LIS2DW12, TWIM1 @250k [vbat3.0 worst nRF SD-min] | 1.97 µs | 1.3 µs … – | LIS2DW12 DS11811 Rev 8 Table 7 tw(SCLL) 1.3 µs at the 0.2·Vdd_IO point (Table 7 note); NXP UM10204 Rev 7.0 Table 11; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at BQ25180, TWIM1 @250k [vbat3.0 worst nRF SD-min] | 2.03 µs | 1.3 µs … – | NXP UM10204 Rev 7.0 Table 11 tLOW 1.3 µs (Fm, 0.3·VDD); BQ25180 DS SLUSE99C §8.3.14 F/S-mode device; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | TMAG_SCL tLOW at TMAG5273, TWIM0 @390k [hi worst nRF SD-min] | 1.31 µs | 1.3 µs … – | TMAG5273 DS SLYS045C Table 5.10 twlow 1300 ns (0.3·VCC, Table 5.3 VIL); NXP UM10204 Rev 7.0 Table 11 tLOW; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at LIS2DW12, TWIM1 @250k [hi worst nRF SD-min] | 1.97 µs | 1.3 µs … – | LIS2DW12 DS11811 Rev 8 Table 7 tw(SCLL) 1.3 µs at the 0.2·Vdd_IO point (Table 7 note); NXP UM10204 Rev 7.0 Table 11; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_twim_tlow_errata219_remedy | I2C_SCL tLOW at BQ25180, TWIM1 @250k [hi worst nRF SD-min] | 2.03 µs | 1.3 µs … – | NXP UM10204 Rev 7.0 Table 11 tLOW 1.3 µs (Fm, 0.3·VDD); BQ25180 DS SLUSE99C §8.3.14 F/S-mode device; firmware rule (hardware/sim, NF-1 I2C, nRF52840 errata 219): docs/firmware.md 1.3 / 3.1 / 4.4 - TWIM0 FREQUENCY = 0x06200000 written after init, TWIM1 clock-frequency 250000 (K250, 0x04000000), TWIM pins keep the default S0D1 drive | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C VOL at driver [nRF S0D1 SDA vbat3.0 Ignd=idle] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at LIS2DW12 [nRF S0D1 SDA vbat3.0 Ignd=idle] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at BQ25180 [nRF S0D1 SDA vbat3.0 Ignd=idle] | 228 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C VOL at driver [nRF S0D1 SCL vbat3.0 Ignd=idle] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at LIS2DW12 [nRF S0D1 SCL vbat3.0 Ignd=idle] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at BQ25180 [nRF S0D1 SCL vbat3.0 Ignd=idle] | 228 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C VOL at driver [LIS2DW12 SDA vbat3.0 Ignd=idle] | 30.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at nRF [LIS2DW12 SDA vbat3.0 Ignd=idle] | 30.7 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at BQ25180 [LIS2DW12 SDA vbat3.0 Ignd=idle] | 30.7 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-idle] | LIS2DW12 SDA sink current [LIS2DW12 SDA vbat3.0 Ignd=idle] | 635 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C VOL at driver [BQ25180 SDA vbat3.0 Ignd=idle] | 43.5 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at nRF [BQ25180 SDA vbat3.0 Ignd=idle] | 43.6 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-idle] | I2C low at LIS2DW12 [BQ25180 SDA vbat3.0 Ignd=idle] | 43.6 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-idle] | BQ25180 SDA sink current [BQ25180 SDA vbat3.0 Ignd=idle] | 633 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C VOL at driver [nRF S0D1 SDA vbat3.0 Ignd=fw_cap] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SDA vbat3.0 Ignd=fw_cap] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at BQ25180 [nRF S0D1 SDA vbat3.0 Ignd=fw_cap] | 252 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C VOL at driver [nRF S0D1 SCL vbat3.0 Ignd=fw_cap] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SCL vbat3.0 Ignd=fw_cap] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at BQ25180 [nRF S0D1 SCL vbat3.0 Ignd=fw_cap] | 252 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C VOL at driver [LIS2DW12 SDA vbat3.0 Ignd=fw_cap] | 30.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at nRF [LIS2DW12 SDA vbat3.0 Ignd=fw_cap] | 30.7 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at BQ25180 [LIS2DW12 SDA vbat3.0 Ignd=fw_cap] | 54.3 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | LIS2DW12 SDA sink current [LIS2DW12 SDA vbat3.0 Ignd=fw_cap] | 635 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C VOL at driver [BQ25180 SDA vbat3.0 Ignd=fw_cap] | 43.9 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at nRF [BQ25180 SDA vbat3.0 Ignd=fw_cap] | 20.3 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | I2C low at LIS2DW12 [BQ25180 SDA vbat3.0 Ignd=fw_cap] | 20.3 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-fw_cap] | BQ25180 SDA sink current [BQ25180 SDA vbat3.0 Ignd=fw_cap] | 638 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C VOL at driver [nRF S0D1 SDA vbat3.0 Ignd=hw_worst] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SDA vbat3.0 Ignd=hw_worst] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at BQ25180 [nRF S0D1 SDA vbat3.0 Ignd=hw_worst] | 274 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C VOL at driver [nRF S0D1 SCL vbat3.0 Ignd=hw_worst] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SCL vbat3.0 Ignd=hw_worst] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at BQ25180 [nRF S0D1 SCL vbat3.0 Ignd=hw_worst] | 274 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C VOL at driver [LIS2DW12 SDA vbat3.0 Ignd=hw_worst] | 30.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at nRF [LIS2DW12 SDA vbat3.0 Ignd=hw_worst] | 30.7 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at BQ25180 [LIS2DW12 SDA vbat3.0 Ignd=hw_worst] | 76.2 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | LIS2DW12 SDA sink current [LIS2DW12 SDA vbat3.0 Ignd=hw_worst] | 635 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C VOL at driver [BQ25180 SDA vbat3.0 Ignd=hw_worst] | 44.2 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at nRF [BQ25180 SDA vbat3.0 Ignd=hw_worst] | -1.31 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | I2C low at LIS2DW12 [BQ25180 SDA vbat3.0 Ignd=hw_worst] | -1.31 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-hw_worst] | BQ25180 SDA sink current [BQ25180 SDA vbat3.0 Ignd=hw_worst] | 643 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SDA vbat3.0 Ignd=sys_absmax_dc] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SDA vbat3.0 Ignd=sys_absmax_dc] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SDA vbat3.0 Ignd=sys_absmax_dc] | 279 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SCL vbat3.0 Ignd=sys_absmax_dc] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SCL vbat3.0 Ignd=sys_absmax_dc] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SCL vbat3.0 Ignd=sys_absmax_dc] | 279 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C VOL at driver [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_dc] | 30.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at nRF [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_dc] | 30.7 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at BQ25180 [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_dc] | 81.3 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | LIS2DW12 SDA sink current [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_dc] | 635 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C VOL at driver [BQ25180 SDA vbat3.0 Ignd=sys_absmax_dc] | 44.3 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at nRF [BQ25180 SDA vbat3.0 Ignd=sys_absmax_dc] | -6.3 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | I2C low at LIS2DW12 [BQ25180 SDA vbat3.0 Ignd=sys_absmax_dc] | -6.3 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_dc] | BQ25180 SDA sink current [BQ25180 SDA vbat3.0 Ignd=sys_absmax_dc] | 644 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SDA vbat3.0 Ignd=sys_absmax_20ms] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SDA vbat3.0 Ignd=sys_absmax_20ms] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SDA vbat3.0 Ignd=sys_absmax_20ms] | 313 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SCL vbat3.0 Ignd=sys_absmax_20ms] | 228 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SCL vbat3.0 Ignd=sys_absmax_20ms] | 228 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SCL vbat3.0 Ignd=sys_absmax_20ms] | 313 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C VOL at driver [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_20ms] | 30.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at nRF [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_20ms] | 30.7 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at BQ25180 [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_20ms] | 115 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | LIS2DW12 SDA sink current [LIS2DW12 SDA vbat3.0 Ignd=sys_absmax_20ms] | 635 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C VOL at driver [BQ25180 SDA vbat3.0 Ignd=sys_absmax_20ms] | 44.8 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at nRF [BQ25180 SDA vbat3.0 Ignd=sys_absmax_20ms] | -39.6 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | I2C low at LIS2DW12 [BQ25180 SDA vbat3.0 Ignd=sys_absmax_20ms] | -39.6 mV | – … 598 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[vbat3.0-sys_absmax_20ms] | BQ25180 SDA sink current [BQ25180 SDA vbat3.0 Ignd=sys_absmax_20ms] | 651 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[lo-idle] | I2C VOL at driver [nRF S0D1 SDA lo Ignd=idle] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-idle] | I2C low at LIS2DW12 [nRF S0D1 SDA lo Ignd=idle] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-idle] | I2C low at BQ25180 [nRF S0D1 SDA lo Ignd=idle] | 249 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-idle] | I2C VOL at driver [nRF S0D1 SCL lo Ignd=idle] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-idle] | I2C low at LIS2DW12 [nRF S0D1 SCL lo Ignd=idle] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-idle] | I2C low at BQ25180 [nRF S0D1 SCL lo Ignd=idle] | 249 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-idle] | I2C VOL at driver [LIS2DW12 SDA lo Ignd=idle] | 33.3 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-idle] | I2C low at nRF [LIS2DW12 SDA lo Ignd=idle] | 33.3 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-idle] | I2C low at BQ25180 [LIS2DW12 SDA lo Ignd=idle] | 33.3 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-idle] | LIS2DW12 SDA sink current [LIS2DW12 SDA lo Ignd=idle] | 687 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[lo-idle] | I2C VOL at driver [BQ25180 SDA lo Ignd=idle] | 47.1 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-idle] | I2C low at nRF [BQ25180 SDA lo Ignd=idle] | 47.2 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-idle] | I2C low at LIS2DW12 [BQ25180 SDA lo Ignd=idle] | 47.2 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-idle] | BQ25180 SDA sink current [BQ25180 SDA lo Ignd=idle] | 685 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C VOL at driver [nRF S0D1 SDA lo Ignd=fw_cap] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SDA lo Ignd=fw_cap] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at BQ25180 [nRF S0D1 SDA lo Ignd=fw_cap] | 272 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C VOL at driver [nRF S0D1 SCL lo Ignd=fw_cap] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SCL lo Ignd=fw_cap] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at BQ25180 [nRF S0D1 SCL lo Ignd=fw_cap] | 272 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C VOL at driver [LIS2DW12 SDA lo Ignd=fw_cap] | 33.3 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at nRF [LIS2DW12 SDA lo Ignd=fw_cap] | 33.3 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at BQ25180 [LIS2DW12 SDA lo Ignd=fw_cap] | 56.9 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-fw_cap] | LIS2DW12 SDA sink current [LIS2DW12 SDA lo Ignd=fw_cap] | 687 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C VOL at driver [BQ25180 SDA lo Ignd=fw_cap] | 47.5 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at nRF [BQ25180 SDA lo Ignd=fw_cap] | 23.9 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-fw_cap] | I2C low at LIS2DW12 [BQ25180 SDA lo Ignd=fw_cap] | 23.9 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-fw_cap] | BQ25180 SDA sink current [BQ25180 SDA lo Ignd=fw_cap] | 690 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C VOL at driver [nRF S0D1 SDA lo Ignd=hw_worst] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SDA lo Ignd=hw_worst] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at BQ25180 [nRF S0D1 SDA lo Ignd=hw_worst] | 294 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C VOL at driver [nRF S0D1 SCL lo Ignd=hw_worst] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SCL lo Ignd=hw_worst] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at BQ25180 [nRF S0D1 SCL lo Ignd=hw_worst] | 294 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C VOL at driver [LIS2DW12 SDA lo Ignd=hw_worst] | 33.3 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at nRF [LIS2DW12 SDA lo Ignd=hw_worst] | 33.3 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at BQ25180 [LIS2DW12 SDA lo Ignd=hw_worst] | 78.9 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-hw_worst] | LIS2DW12 SDA sink current [LIS2DW12 SDA lo Ignd=hw_worst] | 687 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C VOL at driver [BQ25180 SDA lo Ignd=hw_worst] | 47.8 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at nRF [BQ25180 SDA lo Ignd=hw_worst] | 2.33 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-hw_worst] | I2C low at LIS2DW12 [BQ25180 SDA lo Ignd=hw_worst] | 2.33 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-hw_worst] | BQ25180 SDA sink current [BQ25180 SDA lo Ignd=hw_worst] | 695 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SDA lo Ignd=sys_absmax_dc] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SDA lo Ignd=sys_absmax_dc] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SDA lo Ignd=sys_absmax_dc] | 299 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SCL lo Ignd=sys_absmax_dc] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SCL lo Ignd=sys_absmax_dc] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SCL lo Ignd=sys_absmax_dc] | 299 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C VOL at driver [LIS2DW12 SDA lo Ignd=sys_absmax_dc] | 33.3 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at nRF [LIS2DW12 SDA lo Ignd=sys_absmax_dc] | 33.3 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at BQ25180 [LIS2DW12 SDA lo Ignd=sys_absmax_dc] | 83.9 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | LIS2DW12 SDA sink current [LIS2DW12 SDA lo Ignd=sys_absmax_dc] | 687 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C VOL at driver [BQ25180 SDA lo Ignd=sys_absmax_dc] | 47.9 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at nRF [BQ25180 SDA lo Ignd=sys_absmax_dc] | -2.66 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | I2C low at LIS2DW12 [BQ25180 SDA lo Ignd=sys_absmax_dc] | -2.66 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-sys_absmax_dc] | BQ25180 SDA sink current [BQ25180 SDA lo Ignd=sys_absmax_dc] | 696 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SDA lo Ignd=sys_absmax_20ms] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SDA lo Ignd=sys_absmax_20ms] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SDA lo Ignd=sys_absmax_20ms] | 333 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SCL lo Ignd=sys_absmax_20ms] | 249 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SCL lo Ignd=sys_absmax_20ms] | 249 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SCL lo Ignd=sys_absmax_20ms] | 333 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C VOL at driver [LIS2DW12 SDA lo Ignd=sys_absmax_20ms] | 33.3 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at nRF [LIS2DW12 SDA lo Ignd=sys_absmax_20ms] | 33.3 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at BQ25180 [LIS2DW12 SDA lo Ignd=sys_absmax_20ms] | 118 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | LIS2DW12 SDA sink current [LIS2DW12 SDA lo Ignd=sys_absmax_20ms] | 687 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C VOL at driver [BQ25180 SDA lo Ignd=sys_absmax_20ms] | 48.4 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at nRF [BQ25180 SDA lo Ignd=sys_absmax_20ms] | -35.9 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | I2C low at LIS2DW12 [BQ25180 SDA lo Ignd=sys_absmax_20ms] | -35.9 mV | – … 647 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[lo-sys_absmax_20ms] | BQ25180 SDA sink current [BQ25180 SDA lo Ignd=sys_absmax_20ms] | 703 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[nom-idle] | I2C VOL at driver [nRF S0D1 SDA nom Ignd=idle] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-idle] | I2C low at LIS2DW12 [nRF S0D1 SDA nom Ignd=idle] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-idle] | I2C low at BQ25180 [nRF S0D1 SDA nom Ignd=idle] | 254 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-idle] | I2C VOL at driver [nRF S0D1 SCL nom Ignd=idle] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-idle] | I2C low at LIS2DW12 [nRF S0D1 SCL nom Ignd=idle] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-idle] | I2C low at BQ25180 [nRF S0D1 SCL nom Ignd=idle] | 254 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-idle] | I2C VOL at driver [LIS2DW12 SDA nom Ignd=idle] | 34 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-idle] | I2C low at nRF [LIS2DW12 SDA nom Ignd=idle] | 34 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-idle] | I2C low at BQ25180 [LIS2DW12 SDA nom Ignd=idle] | 34 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-idle] | LIS2DW12 SDA sink current [LIS2DW12 SDA nom Ignd=idle] | 701 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[nom-idle] | I2C VOL at driver [BQ25180 SDA nom Ignd=idle] | 48.1 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-idle] | I2C low at nRF [BQ25180 SDA nom Ignd=idle] | 48.2 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-idle] | I2C low at LIS2DW12 [BQ25180 SDA nom Ignd=idle] | 48.2 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-idle] | BQ25180 SDA sink current [BQ25180 SDA nom Ignd=idle] | 699 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C VOL at driver [nRF S0D1 SDA nom Ignd=fw_cap] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SDA nom Ignd=fw_cap] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at BQ25180 [nRF S0D1 SDA nom Ignd=fw_cap] | 278 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C VOL at driver [nRF S0D1 SCL nom Ignd=fw_cap] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SCL nom Ignd=fw_cap] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at BQ25180 [nRF S0D1 SCL nom Ignd=fw_cap] | 278 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C VOL at driver [LIS2DW12 SDA nom Ignd=fw_cap] | 34 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at nRF [LIS2DW12 SDA nom Ignd=fw_cap] | 34 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at BQ25180 [LIS2DW12 SDA nom Ignd=fw_cap] | 57.6 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-fw_cap] | LIS2DW12 SDA sink current [LIS2DW12 SDA nom Ignd=fw_cap] | 701 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C VOL at driver [BQ25180 SDA nom Ignd=fw_cap] | 48.5 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at nRF [BQ25180 SDA nom Ignd=fw_cap] | 24.9 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-fw_cap] | I2C low at LIS2DW12 [BQ25180 SDA nom Ignd=fw_cap] | 24.9 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-fw_cap] | BQ25180 SDA sink current [BQ25180 SDA nom Ignd=fw_cap] | 704 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C VOL at driver [nRF S0D1 SDA nom Ignd=hw_worst] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SDA nom Ignd=hw_worst] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at BQ25180 [nRF S0D1 SDA nom Ignd=hw_worst] | 300 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C VOL at driver [nRF S0D1 SCL nom Ignd=hw_worst] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SCL nom Ignd=hw_worst] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at BQ25180 [nRF S0D1 SCL nom Ignd=hw_worst] | 300 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C VOL at driver [LIS2DW12 SDA nom Ignd=hw_worst] | 34 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at nRF [LIS2DW12 SDA nom Ignd=hw_worst] | 34 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at BQ25180 [LIS2DW12 SDA nom Ignd=hw_worst] | 79.6 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-hw_worst] | LIS2DW12 SDA sink current [LIS2DW12 SDA nom Ignd=hw_worst] | 701 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C VOL at driver [BQ25180 SDA nom Ignd=hw_worst] | 48.8 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at nRF [BQ25180 SDA nom Ignd=hw_worst] | 3.31 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-hw_worst] | I2C low at LIS2DW12 [BQ25180 SDA nom Ignd=hw_worst] | 3.31 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-hw_worst] | BQ25180 SDA sink current [BQ25180 SDA nom Ignd=hw_worst] | 709 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SDA nom Ignd=sys_absmax_dc] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SDA nom Ignd=sys_absmax_dc] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SDA nom Ignd=sys_absmax_dc] | 305 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SCL nom Ignd=sys_absmax_dc] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SCL nom Ignd=sys_absmax_dc] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SCL nom Ignd=sys_absmax_dc] | 305 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C VOL at driver [LIS2DW12 SDA nom Ignd=sys_absmax_dc] | 34 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at nRF [LIS2DW12 SDA nom Ignd=sys_absmax_dc] | 34 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at BQ25180 [LIS2DW12 SDA nom Ignd=sys_absmax_dc] | 84.7 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | LIS2DW12 SDA sink current [LIS2DW12 SDA nom Ignd=sys_absmax_dc] | 701 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C VOL at driver [BQ25180 SDA nom Ignd=sys_absmax_dc] | 48.9 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at nRF [BQ25180 SDA nom Ignd=sys_absmax_dc] | -1.68 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | I2C low at LIS2DW12 [BQ25180 SDA nom Ignd=sys_absmax_dc] | -1.68 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-sys_absmax_dc] | BQ25180 SDA sink current [BQ25180 SDA nom Ignd=sys_absmax_dc] | 710 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SDA nom Ignd=sys_absmax_20ms] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SDA nom Ignd=sys_absmax_20ms] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SDA nom Ignd=sys_absmax_20ms] | 339 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SCL nom Ignd=sys_absmax_20ms] | 254 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SCL nom Ignd=sys_absmax_20ms] | 254 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SCL nom Ignd=sys_absmax_20ms] | 339 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C VOL at driver [LIS2DW12 SDA nom Ignd=sys_absmax_20ms] | 34 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at nRF [LIS2DW12 SDA nom Ignd=sys_absmax_20ms] | 34 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at BQ25180 [LIS2DW12 SDA nom Ignd=sys_absmax_20ms] | 118 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | LIS2DW12 SDA sink current [LIS2DW12 SDA nom Ignd=sys_absmax_20ms] | 701 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C VOL at driver [BQ25180 SDA nom Ignd=sys_absmax_20ms] | 49.4 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at nRF [BQ25180 SDA nom Ignd=sys_absmax_20ms] | -34.9 mV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | I2C low at LIS2DW12 [BQ25180 SDA nom Ignd=sys_absmax_20ms] | -34.9 mV | – … 660 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[nom-sys_absmax_20ms] | BQ25180 SDA sink current [BQ25180 SDA nom Ignd=sys_absmax_20ms] | 717 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[hi-idle] | I2C VOL at driver [nRF S0D1 SDA hi Ignd=idle] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-idle] | I2C low at LIS2DW12 [nRF S0D1 SDA hi Ignd=idle] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-idle] | I2C low at BQ25180 [nRF S0D1 SDA hi Ignd=idle] | 260 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-idle] | I2C VOL at driver [nRF S0D1 SCL hi Ignd=idle] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-idle] | I2C low at LIS2DW12 [nRF S0D1 SCL hi Ignd=idle] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-idle] | I2C low at BQ25180 [nRF S0D1 SCL hi Ignd=idle] | 260 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-idle] | I2C VOL at driver [LIS2DW12 SDA hi Ignd=idle] | 34.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-idle] | I2C low at nRF [LIS2DW12 SDA hi Ignd=idle] | 34.7 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-idle] | I2C low at BQ25180 [LIS2DW12 SDA hi Ignd=idle] | 34.7 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-idle] | LIS2DW12 SDA sink current [LIS2DW12 SDA hi Ignd=idle] | 715 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[hi-idle] | I2C VOL at driver [BQ25180 SDA hi Ignd=idle] | 49.1 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-idle] | I2C low at nRF [BQ25180 SDA hi Ignd=idle] | 49.2 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-idle] | I2C low at LIS2DW12 [BQ25180 SDA hi Ignd=idle] | 49.2 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-idle] | BQ25180 SDA sink current [BQ25180 SDA hi Ignd=idle] | 713 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C VOL at driver [nRF S0D1 SDA hi Ignd=fw_cap] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SDA hi Ignd=fw_cap] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at BQ25180 [nRF S0D1 SDA hi Ignd=fw_cap] | 283 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C VOL at driver [nRF S0D1 SCL hi Ignd=fw_cap] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at LIS2DW12 [nRF S0D1 SCL hi Ignd=fw_cap] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at BQ25180 [nRF S0D1 SCL hi Ignd=fw_cap] | 283 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C VOL at driver [LIS2DW12 SDA hi Ignd=fw_cap] | 34.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at nRF [LIS2DW12 SDA hi Ignd=fw_cap] | 34.7 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at BQ25180 [LIS2DW12 SDA hi Ignd=fw_cap] | 58.3 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-fw_cap] | LIS2DW12 SDA sink current [LIS2DW12 SDA hi Ignd=fw_cap] | 715 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C VOL at driver [BQ25180 SDA hi Ignd=fw_cap] | 49.5 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at nRF [BQ25180 SDA hi Ignd=fw_cap] | 25.9 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-fw_cap] | I2C low at LIS2DW12 [BQ25180 SDA hi Ignd=fw_cap] | 25.9 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-fw_cap] | BQ25180 SDA sink current [BQ25180 SDA hi Ignd=fw_cap] | 718 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C VOL at driver [nRF S0D1 SDA hi Ignd=hw_worst] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SDA hi Ignd=hw_worst] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at BQ25180 [nRF S0D1 SDA hi Ignd=hw_worst] | 305 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C VOL at driver [nRF S0D1 SCL hi Ignd=hw_worst] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at LIS2DW12 [nRF S0D1 SCL hi Ignd=hw_worst] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at BQ25180 [nRF S0D1 SCL hi Ignd=hw_worst] | 305 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C VOL at driver [LIS2DW12 SDA hi Ignd=hw_worst] | 34.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at nRF [LIS2DW12 SDA hi Ignd=hw_worst] | 34.7 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at BQ25180 [LIS2DW12 SDA hi Ignd=hw_worst] | 80.3 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-hw_worst] | LIS2DW12 SDA sink current [LIS2DW12 SDA hi Ignd=hw_worst] | 715 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C VOL at driver [BQ25180 SDA hi Ignd=hw_worst] | 49.8 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at nRF [BQ25180 SDA hi Ignd=hw_worst] | 4.3 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-hw_worst] | I2C low at LIS2DW12 [BQ25180 SDA hi Ignd=hw_worst] | 4.3 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-hw_worst] | BQ25180 SDA sink current [BQ25180 SDA hi Ignd=hw_worst] | 722 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SDA hi Ignd=sys_absmax_dc] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SDA hi Ignd=sys_absmax_dc] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SDA hi Ignd=sys_absmax_dc] | 310 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C VOL at driver [nRF S0D1 SCL hi Ignd=sys_absmax_dc] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at LIS2DW12 [nRF S0D1 SCL hi Ignd=sys_absmax_dc] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at BQ25180 [nRF S0D1 SCL hi Ignd=sys_absmax_dc] | 310 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C VOL at driver [LIS2DW12 SDA hi Ignd=sys_absmax_dc] | 34.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at nRF [LIS2DW12 SDA hi Ignd=sys_absmax_dc] | 34.7 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at BQ25180 [LIS2DW12 SDA hi Ignd=sys_absmax_dc] | 85.4 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | LIS2DW12 SDA sink current [LIS2DW12 SDA hi Ignd=sys_absmax_dc] | 715 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C VOL at driver [BQ25180 SDA hi Ignd=sys_absmax_dc] | 49.9 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at nRF [BQ25180 SDA hi Ignd=sys_absmax_dc] | -693 µV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | I2C low at LIS2DW12 [BQ25180 SDA hi Ignd=sys_absmax_dc] | -693 µV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-sys_absmax_dc] | BQ25180 SDA sink current [BQ25180 SDA hi Ignd=sys_absmax_dc] | 724 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SDA hi Ignd=sys_absmax_20ms] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SDA hi Ignd=sys_absmax_20ms] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SDA hi Ignd=sys_absmax_20ms] | 344 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C VOL at driver [nRF S0D1 SCL hi Ignd=sys_absmax_20ms] | 260 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at LIS2DW12 [nRF S0D1 SCL hi Ignd=sys_absmax_20ms] | 260 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at BQ25180 [nRF S0D1 SCL hi Ignd=sys_absmax_20ms] | 344 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C VOL at driver [LIS2DW12 SDA hi Ignd=sys_absmax_20ms] | 34.7 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at nRF [LIS2DW12 SDA hi Ignd=sys_absmax_20ms] | 34.7 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at BQ25180 [LIS2DW12 SDA hi Ignd=sys_absmax_20ms] | 119 mV | – … 400 mV | BQ25180 DS SLUSE99C §7.5 VIL 0.4 V | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | LIS2DW12 SDA sink current [LIS2DW12 SDA hi Ignd=sys_absmax_20ms] | 715 µA | – … 4 mA | LIS2DW12 DS11811 Rev 8 Table 4 note 5 | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C VOL at driver [BQ25180 SDA hi Ignd=sys_absmax_20ms] | 50.4 mV | – … 400 mV | NXP UM10204 Rev 7.0 Table 10 VOL1 | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at nRF [BQ25180 SDA hi Ignd=sys_absmax_20ms] | -34 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | I2C low at LIS2DW12 [BQ25180 SDA hi Ignd=sys_absmax_20ms] | -34 mV | – … 673 mV | LIS2DW12 DS11811 Rev 8 Table 4 VIL 0.2·VDD_IO | ✅ |
test_system_bus_vol[hi-sys_absmax_20ms] | BQ25180 SDA sink current [BQ25180 SDA hi Ignd=sys_absmax_20ms] | 731 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 VOL condition | ✅ |
test_system_bus_idle_high[vbat3.0] | I2C_SCL idle high at LIS2DW12 [vbat3.0] | 2.98 V | 2.39 V … – | LIS2DW12 DS11811 Rev 8 Table 4 VIH 0.8·VDD_IO | ✅ |
test_system_bus_idle_high[vbat3.0] | I2C_SCL idle high at BQ25180 [vbat3.0] | 2.98 V | 1.3 V … – | BQ25180 DS SLUSE99C §7.5 VIH 1.3 V | ✅ |
test_system_bus_idle_high[vbat3.0] | I2C_SDA idle high at LIS2DW12 [vbat3.0] | 2.98 V | 2.39 V … – | LIS2DW12 DS11811 Rev 8 Table 4 VIH 0.8·VDD_IO | ✅ |
test_system_bus_idle_high[vbat3.0] | I2C_SDA idle high at BQ25180 [vbat3.0] | 2.98 V | 1.3 V … – | BQ25180 DS SLUSE99C §7.5 VIH 1.3 V | ✅ |
test_system_bus_idle_high[hi] | I2C_SCL idle high at LIS2DW12 [hi] | 3.36 V | 2.69 V … – | LIS2DW12 DS11811 Rev 8 Table 4 VIH 0.8·VDD_IO | ✅ |
test_system_bus_idle_high[hi] | I2C_SCL idle high at BQ25180 [hi] | 3.36 V | 1.3 V … – | BQ25180 DS SLUSE99C §7.5 VIH 1.3 V | ✅ |
test_system_bus_idle_high[hi] | I2C_SDA idle high at LIS2DW12 [hi] | 3.36 V | 2.69 V … – | LIS2DW12 DS11811 Rev 8 Table 4 VIH 0.8·VDD_IO | ✅ |
test_system_bus_idle_high[hi] | I2C_SDA idle high at BQ25180 [hi] | 3.36 V | 1.3 V … – | BQ25180 DS SLUSE99C §7.5 VIH 1.3 V | ✅ |
test_fault_i2c_sda_pullup_1k | FAULT R54=1k: SDA low at BQ25180 above VIL | 1.1 V | 400 mV … – | fault must violate BQ25180 DS SLUSE99C VIL | ✅ |
test_chg_int_pullup_in_range | R55 CHG_INT_N pull-up | 10 kΩ | 1 kΩ … 20 kΩ | BQ25180 DS SLUSE99C Table 6-1 /INT pull-up 1–20 kΩ | ✅ |
test_chg_int_pulse[vbat3.0] | CHG_INT_N low at nRF during /INT pulse [vbat3.0 R55-corner 0] | 20.4 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_chg_int_pulse[vbat3.0] | BQ25180 /INT steady sink current [vbat3.0 R55-corner 0] | 300 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 /INT VOL condition 5 mA | ✅ |
test_chg_int_pulse[vbat3.0] | CHG_INT_N idle high with ILKG [vbat3.0 R55-corner 0] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BQ25180 DS SLUSE99C ILKG 1 µA) | ✅ |
test_chg_int_pulse[vbat3.0] | CHG_INT_N low at nRF during /INT pulse [vbat3.0 R55-corner 1] | 20 mV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_chg_int_pulse[vbat3.0] | BQ25180 /INT steady sink current [vbat3.0 R55-corner 1] | 294 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 /INT VOL condition 5 mA | ✅ |
test_chg_int_pulse[vbat3.0] | CHG_INT_N idle high with ILKG [vbat3.0 R55-corner 1] | 2.98 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BQ25180 DS SLUSE99C ILKG 1 µA) | ✅ |
test_chg_int_pulse[lo] | CHG_INT_N low at nRF during /INT pulse [lo R55-corner 0] | 22.1 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_chg_int_pulse[lo] | BQ25180 /INT steady sink current [lo R55-corner 0] | 325 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 /INT VOL condition 5 mA | ✅ |
test_chg_int_pulse[lo] | CHG_INT_N idle high with ILKG [lo R55-corner 0] | 3.22 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BQ25180 DS SLUSE99C ILKG 1 µA) | ✅ |
test_chg_int_pulse[lo] | CHG_INT_N low at nRF during /INT pulse [lo R55-corner 1] | 21.7 mV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_chg_int_pulse[lo] | BQ25180 /INT steady sink current [lo R55-corner 1] | 318 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 /INT VOL condition 5 mA | ✅ |
test_chg_int_pulse[lo] | CHG_INT_N idle high with ILKG [lo R55-corner 1] | 3.22 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BQ25180 DS SLUSE99C ILKG 1 µA) | ✅ |
test_chg_int_pulse[hi] | CHG_INT_N low at nRF during /INT pulse [hi R55-corner 0] | 23.1 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_chg_int_pulse[hi] | BQ25180 /INT steady sink current [hi R55-corner 0] | 338 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 /INT VOL condition 5 mA | ✅ |
test_chg_int_pulse[hi] | CHG_INT_N idle high with ILKG [hi R55-corner 0] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BQ25180 DS SLUSE99C ILKG 1 µA) | ✅ |
test_chg_int_pulse[hi] | CHG_INT_N low at nRF during /INT pulse [hi R55-corner 1] | 22.6 mV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_chg_int_pulse[hi] | BQ25180 /INT steady sink current [hi R55-corner 1] | 331 µA | – … 5 mA | BQ25180 DS SLUSE99C §7.5 /INT VOL condition 5 mA | ✅ |
test_chg_int_pulse[hi] | CHG_INT_N idle high with ILKG [hi R55-corner 1] | 3.36 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BQ25180 DS SLUSE99C ILKG 1 µA) | ✅ |
test_fault_chg_int_pullup_missing | FAULT R55 left off: CHG_INT_N idle below VIH | -457 mV | – … 2.31 V | fault must violate nRF52840 PS v1.1 §6.9.3.1 VIH | ✅ |
test_btn_n_levels[3.0--10] | BTN_N pressed, low at nRF [VBAT 3.0 V -10°C R56-corner 0] | 569 µV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.0--10] | BTN_N released, high at nRF [VBAT 3.0 V -10°C R56-corner 0] | 2.99 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.0--10] | BTN_N pressed, low at nRF [VBAT 3.0 V -10°C R56-corner 1] | 558 µV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.0--10] | BTN_N released, high at nRF [VBAT 3.0 V -10°C R56-corner 1] | 2.99 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.0-25] | BTN_N pressed, low at nRF [VBAT 3.0 V 25°C R56-corner 0] | 612 µV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.0-25] | BTN_N released, high at nRF [VBAT 3.0 V 25°C R56-corner 0] | 2.94 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.0-25] | BTN_N pressed, low at nRF [VBAT 3.0 V 25°C R56-corner 1] | 600 µV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.0-25] | BTN_N released, high at nRF [VBAT 3.0 V 25°C R56-corner 1] | 2.94 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.0-60] | BTN_N pressed, low at nRF [VBAT 3.0 V 60°C R56-corner 0] | 554 µV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.0-60] | BTN_N released, high at nRF [VBAT 3.0 V 60°C R56-corner 0] | 2.43 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.0-60] | BTN_N pressed, low at nRF [VBAT 3.0 V 60°C R56-corner 1] | 541 µV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.0-60] | BTN_N released, high at nRF [VBAT 3.0 V 60°C R56-corner 1] | 2.42 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.7--10] | BTN_N pressed, low at nRF [VBAT 3.7 V -10°C R56-corner 0] | 408 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.7--10] | BTN_N released, high at nRF [VBAT 3.7 V -10°C R56-corner 0] | 3.23 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.7--10] | BTN_N pressed, low at nRF [VBAT 3.7 V -10°C R56-corner 1] | 400 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.7--10] | BTN_N released, high at nRF [VBAT 3.7 V -10°C R56-corner 1] | 3.23 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.7-25] | BTN_N pressed, low at nRF [VBAT 3.7 V 25°C R56-corner 0] | 452 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.7-25] | BTN_N released, high at nRF [VBAT 3.7 V 25°C R56-corner 0] | 3.18 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.7-25] | BTN_N pressed, low at nRF [VBAT 3.7 V 25°C R56-corner 1] | 443 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.7-25] | BTN_N released, high at nRF [VBAT 3.7 V 25°C R56-corner 1] | 3.18 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.7-60] | BTN_N pressed, low at nRF [VBAT 3.7 V 60°C R56-corner 0] | 426 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.7-60] | BTN_N released, high at nRF [VBAT 3.7 V 60°C R56-corner 0] | 2.67 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[3.7-60] | BTN_N pressed, low at nRF [VBAT 3.7 V 60°C R56-corner 1] | 416 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[3.7-60] | BTN_N released, high at nRF [VBAT 3.7 V 60°C R56-corner 1] | 2.66 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[4.2--10] | BTN_N pressed, low at nRF [VBAT 4.2 V -10°C R56-corner 0] | 329 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[4.2--10] | BTN_N released, high at nRF [VBAT 4.2 V -10°C R56-corner 0] | 3.23 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[4.2--10] | BTN_N pressed, low at nRF [VBAT 4.2 V -10°C R56-corner 1] | 323 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[4.2--10] | BTN_N released, high at nRF [VBAT 4.2 V -10°C R56-corner 1] | 3.23 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[4.2-25] | BTN_N pressed, low at nRF [VBAT 4.2 V 25°C R56-corner 0] | 368 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[4.2-25] | BTN_N released, high at nRF [VBAT 4.2 V 25°C R56-corner 0] | 3.18 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[4.2-25] | BTN_N pressed, low at nRF [VBAT 4.2 V 25°C R56-corner 1] | 361 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[4.2-25] | BTN_N released, high at nRF [VBAT 4.2 V 25°C R56-corner 1] | 3.18 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[4.2-60] | BTN_N pressed, low at nRF [VBAT 4.2 V 60°C R56-corner 0] | 351 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[4.2-60] | BTN_N released, high at nRF [VBAT 4.2 V 60°C R56-corner 0] | 2.67 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_btn_n_levels[4.2-60] | BTN_N pressed, low at nRF [VBAT 4.2 V 60°C R56-corner 1] | 343 µV | – … 970 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_btn_n_levels[4.2-60] | BTN_N released, high at nRF [VBAT 4.2 V 60°C R56-corner 1] | 2.66 V | 2.26 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD (BSS138DW DS30203 IDSS 0.5 µA, ×2/10 °C) | ✅ |
test_fault_btn_pullup_1meg | FAULT R56=1M: BTN_N released level below VIH at 60 °C | -375 mV | – … 2.26 V | fault must violate nRF52840 PS v1.1 §6.9.3.1 VIH | ✅ |
test_fault_btn_gate_pulldown_missing | FAULT R4 left off: BTN_N released level below VIH | 440 µV | – … 2.26 V | fault must violate nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD | ✅ |
test_imu_int_push_pull[vbat3.0] | IMU_INT1 has no pull resistor | 0 | 0 … 0 | LIS2DW12 DS11811 Rev 8 Table 12: push-pull default; Table 34 CTRL3.PP_OD = 0 (firmware keeps it) | ✅ |
test_imu_int_push_pull[vbat3.0] | IMU_INT1 low at nRF [vbat3.0] | 431 pV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_imu_int_push_pull[vbat3.0] | IMU_INT1 high at nRF [vbat3.0] | 2.99 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD | ✅ |
test_imu_int_push_pull[vbat3.0] | IMU_INT2 has no pull resistor | 0 | 0 … 0 | LIS2DW12 DS11811 Rev 8 Table 12: push-pull default; Table 34 CTRL3.PP_OD = 0 (firmware keeps it) | ✅ |
test_imu_int_push_pull[vbat3.0] | IMU_INT2 low at nRF [vbat3.0] | 431 pV | – … 897 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_imu_int_push_pull[vbat3.0] | IMU_INT2 high at nRF [vbat3.0] | 2.99 V | 2.09 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD | ✅ |
test_imu_int_push_pull[hi] | IMU_INT1 has no pull resistor | 0 | 0 … 0 | LIS2DW12 DS11811 Rev 8 Table 12: push-pull default; Table 34 CTRL3.PP_OD = 0 (firmware keeps it) | ✅ |
test_imu_int_push_pull[hi] | IMU_INT1 low at nRF [hi] | 488 pV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_imu_int_push_pull[hi] | IMU_INT1 high at nRF [hi] | 3.37 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD | ✅ |
test_imu_int_push_pull[hi] | IMU_INT2 has no pull resistor | 0 | 0 … 0 | LIS2DW12 DS11811 Rev 8 Table 12: push-pull default; Table 34 CTRL3.PP_OD = 0 (firmware keeps it) | ✅ |
test_imu_int_push_pull[hi] | IMU_INT2 low at nRF [hi] | 488 pV | – … 1.01 V | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3·VDD | ✅ |
test_imu_int_push_pull[hi] | IMU_INT2 high at nRF [hi] | 3.37 V | 2.36 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7·VDD | ✅ |
test_harness_model_inputs_from_netlist | link VSYS conductors (J1/J3, netlist) | 2 | 2 … – | SPEC.md 2 link pinout (pins 1, 2) | ✅ |
test_harness_model_inputs_from_netlist | link GND conductors (J1/J3, netlist) | 3 | 3 … – | SPEC.md 2 link pinout (pins 3, 4, 8) | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: link VSYS current per contact | 673 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: link GND current per contact | 449 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: battery connector current per contact | 673 mA | – … 1 A | JST SH DS current rating per contact | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: V(BAT) (BUVLO) | 4.04 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: VLED min | 3.83 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: I(BAT) peak | 1.35 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_hw_worst_case_uncapped_dc[nominal-4.2] | uncapped DC VBAT 4.2 nominal: I(SYS) DC | 1.35 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: link VSYS current per contact | 668 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: link GND current per contact | 445 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: battery connector current per contact | 668 mA | – … 1 A | JST SH DS current rating per contact | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: V(BAT) (BUVLO) | 3.88 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: VLED min | 3.55 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: I(BAT) peak | 1.34 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_hw_worst_case_uncapped_dc[worst-4.2] | uncapped DC VBAT 4.2 worst: I(SYS) DC | 1.34 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: link VSYS current per contact | 663 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: link GND current per contact | 442 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: battery connector current per contact | 663 mA | – … 1 A | JST SH DS current rating per contact | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: V(BAT) (BUVLO) | 3.54 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: VLED min | 3.33 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: I(BAT) peak | 1.33 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.7] | uncapped DC VBAT 3.7 nominal: I(SYS) DC | 1.33 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: link VSYS current per contact | 660 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: link GND current per contact | 440 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: battery connector current per contact | 660 mA | – … 1 A | JST SH DS current rating per contact | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: V(BAT) (BUVLO) | 3.38 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: +3V3 min | 3.11 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: I(BAT) peak | 1.32 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: I(SYS) DC | 1.32 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.7] | uncapped DC VBAT 3.7 worst: VLED min | 3.05 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_hw_worst_case_uncapped_dc[nominal-3.0] | uncapped DC VBAT 3.0 nominal: link VSYS current per contact | 651 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.0] | uncapped DC VBAT 3.0 nominal: link GND current per contact | 434 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.0] | uncapped DC VBAT 3.0 nominal: battery connector current per contact | 651 mA | – … 1 A | JST SH DS current rating per contact | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.0] | uncapped DC VBAT 3.0 nominal: I(BAT) peak | 1.3 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.0] | uncapped DC VBAT 3.0 nominal: I(SYS) DC | 1.3 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_hw_worst_case_uncapped_dc[nominal-3.0] | uncapped DC VBAT 3.0 nominal: +3V3 min | 2.68 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ❌ |
test_hw_worst_case_uncapped_dc[worst-3.0] | uncapped DC VBAT 3.0 worst: link VSYS current per contact | 653 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.0] | uncapped DC VBAT 3.0 worst: link GND current per contact | 435 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28 | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.0] | uncapped DC VBAT 3.0 worst: battery connector current per contact | 653 mA | – … 1 A | JST SH DS current rating per contact | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.0] | uncapped DC VBAT 3.0 worst: I(BAT) peak | 1.31 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.0] | uncapped DC VBAT 3.0 worst: I(SYS) DC | 1.31 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_hw_worst_case_uncapped_dc[worst-3.0] | uncapped DC VBAT 3.0 worst: +3V3 min | 2.41 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ❌ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: link VSYS current per contact | 15.6 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: link GND current per contact | 10.4 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: battery connector current per contact | 15.6 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: V(BAT) (BUVLO) | 3.69 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: I(BAT) peak | 31.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-boot] | PI-1 rule (boot), DC VBAT 3.7 worst: I(SYS) DC | 31.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: link VSYS current per contact | 236 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: link GND current per contact | 158 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: battery connector current per contact | 236 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: V(BAT) (BUVLO) | 3.59 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: VLED min | 3.46 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: I(BAT) peak | 473 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-burst] | PI-1 rule (app-burst), DC VBAT 3.7 worst: I(SYS) DC | 473 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: link VSYS current per contact | 160 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: link GND current per contact | 107 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: battery connector current per contact | 160 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: V(BAT) (BUVLO) | 3.62 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: VLED min | 3.54 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: I(BAT) peak | 321 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-sustained] | PI-1 rule (app-sustained), DC VBAT 3.7 worst: I(SYS) DC | 321 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: link VSYS current per contact | 216 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: link GND current per contact | 144 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: battery connector current per contact | 216 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: V(BAT) (BUVLO) | 3.6 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: VLED min | 3.5 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: I(BAT) peak | 432 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.7-app-moving] | PI-1 rule (app-moving), DC VBAT 3.7 worst: I(SYS) DC | 432 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 nominal: link VSYS current per contact | 15.6 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 nominal: link GND current per contact | 10.4 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 nominal: battery connector current per contact | 15.6 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 nominal: +3V3 min | 2.98 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 nominal: I(BAT) peak | 31.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 nominal: I(SYS) DC | 31.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 nominal: link VSYS current per contact | 98.3 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 nominal: link GND current per contact | 65.6 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 nominal: battery connector current per contact | 98.3 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 nominal: +3V3 min | 2.93 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 nominal: I(BAT) peak | 197 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[nominal-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 nominal: I(SYS) DC | 197 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 worst: link VSYS current per contact | 15.6 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 worst: link GND current per contact | 10.4 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 worst: battery connector current per contact | 15.6 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 worst: +3V3 min | 2.96 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 worst: I(BAT) peak | 31.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-boot] | PI-1 rule (boot), DC VBAT 3.0 worst: I(SYS) DC | 31.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 worst: link VSYS current per contact | 99.4 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 worst: link GND current per contact | 66.3 mA | – … 1 A | JST SH DS (eSH): current rating 1.0 A per contact, AWG #28; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 worst: battery connector current per contact | 99.4 mA | – … 1 A | JST SH DS current rating per contact; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 worst: +3V3 min | 2.88 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 worst: I(BAT) peak | 199 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_hw_worst_case_uncapped_dc_with_fw_rule[worst-3.0-app-cue] | PI-1 rule (app-cue), DC VBAT 3.0 worst: I(SYS) DC | 199 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-1 (docs/firmware.md 6.3 / 11.2, SPEC 5.4): limiter active from the first frame after reset; MCUboot and the recovery image keep LED_PWR_EN, OLED_VCC_EN and MOT_NSLEEP low | ✅ |
test_firmware_capped_dc[full@3.65-nominal] | capped DC full@3.65 nominal: V(BAT) (BUVLO) | 3.58 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@3.65-nominal] | capped DC full@3.65 nominal: VLED min | 3.49 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@3.65-nominal] | capped DC full@3.65 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@3.65-nominal] | capped DC full@3.65 nominal: I(BAT) peak | 563 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@3.65-nominal] | capped DC full@3.65 nominal: I(SYS) DC | 563 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@3.65-worst] | capped DC full@3.65 worst: V(BAT) (BUVLO) | 3.51 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@3.65-worst] | capped DC full@3.65 worst: VLED min | 3.37 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@3.65-worst] | capped DC full@3.65 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@3.65-worst] | capped DC full@3.65 worst: I(BAT) peak | 571 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@3.65-worst] | capped DC full@3.65 worst: I(SYS) DC | 571 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@3.65-cold] | capped DC full@3.65 cold: V(BAT) (BUVLO) | 3.51 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@3.65-cold] | capped DC full@3.65 cold: VLED min | 3.38 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@3.65-cold] | capped DC full@3.65 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@3.65-cold] | capped DC full@3.65 cold: I(BAT) peak | 570 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@3.65-cold] | capped DC full@3.65 cold: I(SYS) DC | 570 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@3.70-nominal] | capped DC full@3.70 nominal: V(BAT) (BUVLO) | 3.63 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@3.70-nominal] | capped DC full@3.70 nominal: VLED min | 3.55 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@3.70-nominal] | capped DC full@3.70 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@3.70-nominal] | capped DC full@3.70 nominal: I(BAT) peak | 560 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@3.70-nominal] | capped DC full@3.70 nominal: I(SYS) DC | 560 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@3.70-worst] | capped DC full@3.70 worst: V(BAT) (BUVLO) | 3.56 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@3.70-worst] | capped DC full@3.70 worst: VLED min | 3.42 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@3.70-worst] | capped DC full@3.70 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@3.70-worst] | capped DC full@3.70 worst: I(BAT) peak | 567 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@3.70-worst] | capped DC full@3.70 worst: I(SYS) DC | 567 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@3.70-cold] | capped DC full@3.70 cold: V(BAT) (BUVLO) | 3.56 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@3.70-cold] | capped DC full@3.70 cold: VLED min | 3.43 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@3.70-cold] | capped DC full@3.70 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@3.70-cold] | capped DC full@3.70 cold: I(BAT) peak | 567 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@3.70-cold] | capped DC full@3.70 cold: I(SYS) DC | 567 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@4.20-nominal] | capped DC full@4.20 nominal: V(BAT) (BUVLO) | 4.14 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@4.20-nominal] | capped DC full@4.20 nominal: VLED min | 4.05 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@4.20-nominal] | capped DC full@4.20 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@4.20-nominal] | capped DC full@4.20 nominal: I(BAT) peak | 535 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@4.20-nominal] | capped DC full@4.20 nominal: I(SYS) DC | 535 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@4.20-worst] | capped DC full@4.20 worst: V(BAT) (BUVLO) | 4.07 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@4.20-worst] | capped DC full@4.20 worst: VLED min | 3.93 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@4.20-worst] | capped DC full@4.20 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@4.20-worst] | capped DC full@4.20 worst: I(BAT) peak | 540 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@4.20-worst] | capped DC full@4.20 worst: I(SYS) DC | 540 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[full@4.20-cold] | capped DC full@4.20 cold: V(BAT) (BUVLO) | 4.07 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[full@4.20-cold] | capped DC full@4.20 cold: VLED min | 3.94 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[full@4.20-cold] | capped DC full@4.20 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[full@4.20-cold] | capped DC full@4.20 cold: I(BAT) peak | 539 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[full@4.20-cold] | capped DC full@4.20 cold: I(SYS) DC | 539 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[moving@3.65-nominal] | capped DC moving@3.65 nominal: V(BAT) (BUVLO) | 3.59 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[moving@3.65-nominal] | capped DC moving@3.65 nominal: VLED min | 3.53 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[moving@3.65-nominal] | capped DC moving@3.65 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[moving@3.65-nominal] | capped DC moving@3.65 nominal: I(BAT) peak | 505 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[moving@3.65-nominal] | capped DC moving@3.65 nominal: I(SYS) DC | 505 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[moving@3.65-worst] | capped DC moving@3.65 worst: V(BAT) (BUVLO) | 3.52 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[moving@3.65-worst] | capped DC moving@3.65 worst: VLED min | 3.41 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[moving@3.65-worst] | capped DC moving@3.65 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[moving@3.65-worst] | capped DC moving@3.65 worst: I(BAT) peak | 532 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[moving@3.65-worst] | capped DC moving@3.65 worst: I(SYS) DC | 532 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[moving@3.65-cold] | capped DC moving@3.65 cold: V(BAT) (BUVLO) | 3.53 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[moving@3.65-cold] | capped DC moving@3.65 cold: VLED min | 3.43 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[moving@3.65-cold] | capped DC moving@3.65 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[moving@3.65-cold] | capped DC moving@3.65 cold: I(BAT) peak | 511 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[moving@3.65-cold] | capped DC moving@3.65 cold: I(SYS) DC | 511 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[moving@4.20-nominal] | capped DC moving@4.20 nominal: V(BAT) (BUVLO) | 4.15 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[moving@4.20-nominal] | capped DC moving@4.20 nominal: VLED min | 4.09 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[moving@4.20-nominal] | capped DC moving@4.20 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[moving@4.20-nominal] | capped DC moving@4.20 nominal: I(BAT) peak | 458 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[moving@4.20-nominal] | capped DC moving@4.20 nominal: I(SYS) DC | 458 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[moving@4.20-worst] | capped DC moving@4.20 worst: V(BAT) (BUVLO) | 4.08 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[moving@4.20-worst] | capped DC moving@4.20 worst: VLED min | 3.99 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[moving@4.20-worst] | capped DC moving@4.20 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[moving@4.20-worst] | capped DC moving@4.20 worst: I(BAT) peak | 479 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[moving@4.20-worst] | capped DC moving@4.20 worst: I(SYS) DC | 479 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[moving@4.20-cold] | capped DC moving@4.20 cold: V(BAT) (BUVLO) | 4.09 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[moving@4.20-cold] | capped DC moving@4.20 cold: VLED min | 4 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[moving@4.20-cold] | capped DC moving@4.20 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[moving@4.20-cold] | capped DC moving@4.20 cold: I(BAT) peak | 462 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[moving@4.20-cold] | capped DC moving@4.20 cold: I(SYS) DC | 462 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[derated@3.53-nominal] | capped DC derated@3.53 nominal: V(BAT) (BUVLO) | 3.48 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[derated@3.53-nominal] | capped DC derated@3.53 nominal: VLED min | 3.42 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[derated@3.53-nominal] | capped DC derated@3.53 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[derated@3.53-nominal] | capped DC derated@3.53 nominal: I(BAT) peak | 423 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[derated@3.53-nominal] | capped DC derated@3.53 nominal: I(SYS) DC | 423 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[derated@3.53-worst] | capped DC derated@3.53 worst: V(BAT) (BUVLO) | 3.42 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[derated@3.53-worst] | capped DC derated@3.53 worst: VLED min | 3.33 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[derated@3.53-worst] | capped DC derated@3.53 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[derated@3.53-worst] | capped DC derated@3.53 worst: I(BAT) peak | 446 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[derated@3.53-worst] | capped DC derated@3.53 worst: I(SYS) DC | 446 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[derated@3.53-cold] | capped DC derated@3.53 cold: V(BAT) (BUVLO) | 3.43 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[derated@3.53-cold] | capped DC derated@3.53 cold: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[derated@3.53-cold] | capped DC derated@3.53 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[derated@3.53-cold] | capped DC derated@3.53 cold: I(BAT) peak | 425 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[derated@3.53-cold] | capped DC derated@3.53 cold: I(SYS) DC | 425 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[lowbat@3.48-nominal] | capped DC lowbat@3.48 nominal: V(BAT) (BUVLO) | 3.44 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[lowbat@3.48-nominal] | capped DC lowbat@3.48 nominal: VLED min | 3.4 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[lowbat@3.48-nominal] | capped DC lowbat@3.48 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[lowbat@3.48-nominal] | capped DC lowbat@3.48 nominal: I(BAT) peak | 328 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[lowbat@3.48-nominal] | capped DC lowbat@3.48 nominal: I(SYS) DC | 328 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[lowbat@3.48-worst] | capped DC lowbat@3.48 worst: V(BAT) (BUVLO) | 3.4 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[lowbat@3.48-worst] | capped DC lowbat@3.48 worst: VLED min | 3.33 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[lowbat@3.48-worst] | capped DC lowbat@3.48 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[lowbat@3.48-worst] | capped DC lowbat@3.48 worst: I(BAT) peak | 351 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[lowbat@3.48-worst] | capped DC lowbat@3.48 worst: I(SYS) DC | 351 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_dc[lowbat@3.48-cold] | capped DC lowbat@3.48 cold: V(BAT) (BUVLO) | 3.4 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_dc[lowbat@3.48-cold] | capped DC lowbat@3.48 cold: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_dc[lowbat@3.48-cold] | capped DC lowbat@3.48 cold: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_dc[lowbat@3.48-cold] | capped DC lowbat@3.48 cold: I(BAT) peak | 330 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_dc[lowbat@3.48-cold] | capped DC lowbat@3.48 cold: I(SYS) DC | 330 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@4.20] | capped sync-PWM full@4.20 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@4.20] | capped sync-PWM full@4.20 nominal: GND offset main-base, peak | 20.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@4.20] | capped sync-PWM full@4.20 nominal: VLED min | 3.92 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@4.20] | capped sync-PWM full@4.20 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@4.20] | capped sync-PWM full@4.20 nominal: I(BAT) peak | 957 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@4.20] | capped sync-PWM full@4.20 nominal: I(SYS) DC | 558 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@4.20] | capped sync-PWM full@4.20 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@4.20] | capped sync-PWM full@4.20 worst: GND offset main-base, peak | 33.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@4.20] | capped sync-PWM full@4.20 worst: VLED min | 3.71 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@4.20] | capped sync-PWM full@4.20 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@4.20] | capped sync-PWM full@4.20 worst: I(BAT) peak | 955 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@4.20] | capped sync-PWM full@4.20 worst: I(SYS) DC | 551 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.70] | capped sync-PWM full@3.70 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.70] | capped sync-PWM full@3.70 nominal: GND offset main-base, peak | 20.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.70] | capped sync-PWM full@3.70 nominal: VLED min | 3.41 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.70] | capped sync-PWM full@3.70 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.70] | capped sync-PWM full@3.70 nominal: I(BAT) peak | 985 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.70] | capped sync-PWM full@3.70 nominal: I(SYS) DC | 583 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.65] | capped sync-PWM full@3.65 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.65] | capped sync-PWM full@3.65 nominal: GND offset main-base, peak | 20.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.65] | capped sync-PWM full@3.65 nominal: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.65] | capped sync-PWM full@3.65 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.65] | capped sync-PWM full@3.65 nominal: I(BAT) peak | 988 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-full@3.65] | capped sync-PWM full@3.65 nominal: I(SYS) DC | 586 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@4.20] | capped sync-PWM moving@4.20 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@4.20] | capped sync-PWM moving@4.20 nominal: GND offset main-base, peak | 21.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@4.20] | capped sync-PWM moving@4.20 nominal: VLED min | 3.91 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@4.20] | capped sync-PWM moving@4.20 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@4.20] | capped sync-PWM moving@4.20 nominal: I(BAT) peak | 1.02 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@4.20] | capped sync-PWM moving@4.20 nominal: I(SYS) DC | 465 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@4.20] | capped sync-PWM moving@4.20 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@4.20] | capped sync-PWM moving@4.20 worst: GND offset main-base, peak | 34.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@4.20] | capped sync-PWM moving@4.20 worst: VLED min | 3.72 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@4.20] | capped sync-PWM moving@4.20 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@4.20] | capped sync-PWM moving@4.20 worst: I(BAT) peak | 942 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@4.20] | capped sync-PWM moving@4.20 worst: I(SYS) DC | 480 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.70] | capped sync-PWM full@3.70 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.70] | capped sync-PWM full@3.70 worst: GND offset main-base, peak | 34.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.70] | capped sync-PWM full@3.70 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.70] | capped sync-PWM full@3.70 worst: I(BAT) peak | 985 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.70] | capped sync-PWM full@3.70 worst: I(SYS) DC | 578 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.70] | capped sync-PWM full@3.70 worst: VLED min | 3.19 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_firmware_capped_sync_pwm_transient[worst-full@3.65] | capped sync-PWM full@3.65 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.65] | capped sync-PWM full@3.65 worst: GND offset main-base, peak | 34.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.65] | capped sync-PWM full@3.65 worst: +3V3 min | 3.21 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.65] | capped sync-PWM full@3.65 worst: I(BAT) peak | 981 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.65] | capped sync-PWM full@3.65 worst: I(SYS) DC | 581 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-full@3.65] | capped sync-PWM full@3.65 worst: VLED min | 3.14 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_firmware_capped_sync_pwm_transient[nominal-moving@3.65] | capped sync-PWM moving@3.65 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@3.65] | capped sync-PWM moving@3.65 nominal: GND offset main-base, peak | 22.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@3.65] | capped sync-PWM moving@3.65 nominal: VLED min | 3.35 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@3.65] | capped sync-PWM moving@3.65 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@3.65] | capped sync-PWM moving@3.65 nominal: I(BAT) peak | 1.06 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-moving@3.65] | capped sync-PWM moving@3.65 nominal: I(SYS) DC | 511 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@3.65] | capped sync-PWM moving@3.65 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@3.65] | capped sync-PWM moving@3.65 worst: GND offset main-base, peak | 35.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@3.65] | capped sync-PWM moving@3.65 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@3.65] | capped sync-PWM moving@3.65 worst: I(BAT) peak | 985 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@3.65] | capped sync-PWM moving@3.65 worst: I(SYS) DC | 530 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-moving@3.65] | capped sync-PWM moving@3.65 worst: VLED min | 3.15 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_firmware_capped_sync_pwm_transient[nominal-derated@3.53] | capped sync-PWM derated@3.53 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-derated@3.53] | capped sync-PWM derated@3.53 nominal: GND offset main-base, peak | 21.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-derated@3.53] | capped sync-PWM derated@3.53 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-derated@3.53] | capped sync-PWM derated@3.53 nominal: I(BAT) peak | 976 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-derated@3.53] | capped sync-PWM derated@3.53 nominal: I(SYS) DC | 430 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-derated@3.53] | capped sync-PWM derated@3.53 nominal: VLED min | 3.25 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_firmware_capped_sync_pwm_transient[worst-derated@3.53] | capped sync-PWM derated@3.53 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-derated@3.53] | capped sync-PWM derated@3.53 worst: GND offset main-base, peak | 32.4 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-derated@3.53] | capped sync-PWM derated@3.53 worst: +3V3 min | 3.19 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-derated@3.53] | capped sync-PWM derated@3.53 worst: I(BAT) peak | 880 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-derated@3.53] | capped sync-PWM derated@3.53 worst: I(SYS) DC | 447 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-derated@3.53] | capped sync-PWM derated@3.53 worst: VLED min | 3.07 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_firmware_capped_sync_pwm_transient[nominal-lowbat@3.48] | capped sync-PWM lowbat@3.48 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-lowbat@3.48] | capped sync-PWM lowbat@3.48 nominal: GND offset main-base, peak | 8.67 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-lowbat@3.48] | capped sync-PWM lowbat@3.48 nominal: VLED min | 3.41 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-lowbat@3.48] | capped sync-PWM lowbat@3.48 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-lowbat@3.48] | capped sync-PWM lowbat@3.48 nominal: I(BAT) peak | 368 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[nominal-lowbat@3.48] | capped sync-PWM lowbat@3.48 nominal: I(SYS) DC | 311 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient[worst-lowbat@3.48] | capped sync-PWM lowbat@3.48 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_firmware_capped_sync_pwm_transient[worst-lowbat@3.48] | capped sync-PWM lowbat@3.48 worst: GND offset main-base, peak | 13.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-lowbat@3.48] | capped sync-PWM lowbat@3.48 worst: VLED min | 3.33 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-lowbat@3.48] | capped sync-PWM lowbat@3.48 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_firmware_capped_sync_pwm_transient[worst-lowbat@3.48] | capped sync-PWM lowbat@3.48 worst: I(BAT) peak | 368 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_firmware_capped_sync_pwm_transient[worst-lowbat@3.48] | capped sync-PWM lowbat@3.48 worst: I(SYS) DC | 329 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.70-as-scenario] | PI-2 rule (0.51 A aligned peak), sync-PWM full@3.70 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.70-as-scenario] | PI-2 rule (0.51 A aligned peak), sync-PWM full@3.70 worst: GND offset main-base, peak | 27.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.70-as-scenario] | PI-2 rule (0.51 A aligned peak), sync-PWM full@3.70 worst: VLED min | 3.3 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.70-as-scenario] | PI-2 rule (0.51 A aligned peak), sync-PWM full@3.70 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.70-as-scenario] | PI-2 rule (0.51 A aligned peak), sync-PWM full@3.70 worst: I(BAT) peak | 782 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.70-as-scenario] | PI-2 rule (0.51 A aligned peak), sync-PWM full@3.70 worst: I(SYS) DC | 555 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.65-as-scenario] | PI-2 rule (0.42 A aligned peak), sync-PWM full@3.65 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.65-as-scenario] | PI-2 rule (0.42 A aligned peak), sync-PWM full@3.65 worst: GND offset main-base, peak | 24.6 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.65-as-scenario] | PI-2 rule (0.42 A aligned peak), sync-PWM full@3.65 worst: VLED min | 3.3 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.65-as-scenario] | PI-2 rule (0.42 A aligned peak), sync-PWM full@3.65 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.65-as-scenario] | PI-2 rule (0.42 A aligned peak), sync-PWM full@3.65 worst: I(BAT) peak | 695 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-full@3.65-as-scenario] | PI-2 rule (0.42 A aligned peak), sync-PWM full@3.65 worst: I(SYS) DC | 548 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-moving@3.65-as-scenario] | PI-2 rule (0.19 A aligned peak), sync-PWM moving@3.65 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-moving@3.65-as-scenario] | PI-2 rule (0.19 A aligned peak), sync-PWM moving@3.65 worst: GND offset main-base, peak | 23 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-moving@3.65-as-scenario] | PI-2 rule (0.19 A aligned peak), sync-PWM moving@3.65 worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-moving@3.65-as-scenario] | PI-2 rule (0.19 A aligned peak), sync-PWM moving@3.65 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-moving@3.65-as-scenario] | PI-2 rule (0.19 A aligned peak), sync-PWM moving@3.65 worst: I(BAT) peak | 641 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-moving@3.65-as-scenario] | PI-2 rule (0.19 A aligned peak), sync-PWM moving@3.65 worst: I(SYS) DC | 511 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 nominal: GND offset main-base, peak | 9.04 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 nominal: VLED min | 3.44 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 nominal: I(BAT) peak | 387 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 nominal: I(SYS) DC | 334 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 worst: GND offset main-base, peak | 14.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 worst: I(BAT) peak | 394 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-as-scenario] | PI-2 rule (0.03 A aligned peak), sync-PWM derated@3.53 worst: I(SYS) DC | 352 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle nominal: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle nominal: GND offset main-base, peak | 9.89 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle nominal: VLED min | 3.41 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle nominal: I(BAT) peak | 435 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[nominal-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle nominal: I(SYS) DC | 276 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle worst: GND offset main-base, peak | 16 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle worst: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle worst: I(BAT) peak | 429 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_firmware_capped_sync_pwm_transient_with_fw_rule[worst-derated@3.53-idle] | PI-2 rule (0.26 A aligned peak), sync-PWM derated@3.53, actuator idle worst: I(SYS) DC | 273 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-sustained] | PI-2 row VBAT 3.53 sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-sustained] | PI-2 row VBAT 3.53 sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 16 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-sustained] | PI-2 row VBAT 3.53 sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-sustained] | PI-2 row VBAT 3.53 sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-sustained] | PI-2 row VBAT 3.53 sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 429 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-sustained] | PI-2 row VBAT 3.53 sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 273 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-moving] | PI-2 row VBAT 3.53 moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-moving] | PI-2 row VBAT 3.53 moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 14.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-moving] | PI-2 row VBAT 3.53 moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-moving] | PI-2 row VBAT 3.53 moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-moving] | PI-2 row VBAT 3.53 moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 394 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.53-moving] | PI-2 row VBAT 3.53 moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 352 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-burst] | PI-2 row VBAT 3.60 burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-burst] | PI-2 row VBAT 3.60 burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 18.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-burst] | PI-2 row VBAT 3.60 burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-burst] | PI-2 row VBAT 3.60 burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-burst] | PI-2 row VBAT 3.60 burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 508 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-burst] | PI-2 row VBAT 3.60 burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 447 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-sustained] | PI-2 row VBAT 3.60 sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-sustained] | PI-2 row VBAT 3.60 sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 18.5 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-sustained] | PI-2 row VBAT 3.60 sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-sustained] | PI-2 row VBAT 3.60 sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-sustained] | PI-2 row VBAT 3.60 sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 503 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-sustained] | PI-2 row VBAT 3.60 sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 320 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-moving] | PI-2 row VBAT 3.60 moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-moving] | PI-2 row VBAT 3.60 moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 17.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-moving] | PI-2 row VBAT 3.60 moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-moving] | PI-2 row VBAT 3.60 moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-moving] | PI-2 row VBAT 3.60 moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 460 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.6-moving] | PI-2 row VBAT 3.60 moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 413 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-burst] | PI-2 row VBAT 3.65 burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-burst] | PI-2 row VBAT 3.65 burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 21.8 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-burst] | PI-2 row VBAT 3.65 burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-burst] | PI-2 row VBAT 3.65 burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-burst] | PI-2 row VBAT 3.65 burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 598 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-burst] | PI-2 row VBAT 3.65 burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 456 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-sustained] | PI-2 row VBAT 3.65 sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-sustained] | PI-2 row VBAT 3.65 sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 21.3 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-sustained] | PI-2 row VBAT 3.65 sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.35 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-sustained] | PI-2 row VBAT 3.65 sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-sustained] | PI-2 row VBAT 3.65 sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 581 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-sustained] | PI-2 row VBAT 3.65 sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 329 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-moving] | PI-2 row VBAT 3.65 moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-moving] | PI-2 row VBAT 3.65 moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 20.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-moving] | PI-2 row VBAT 3.65 moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.4 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-moving] | PI-2 row VBAT 3.65 moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-moving] | PI-2 row VBAT 3.65 moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 545 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.65-moving] | PI-2 row VBAT 3.65 moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 419 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-burst] | PI-2 row VBAT 3.70 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-burst] | PI-2 row VBAT 3.70 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 24.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-burst] | PI-2 row VBAT 3.70 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-burst] | PI-2 row VBAT 3.70 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-burst] | PI-2 row VBAT 3.70 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 686 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-burst] | PI-2 row VBAT 3.70 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 464 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-sustained] | PI-2 row VBAT 3.70 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-sustained] | PI-2 row VBAT 3.70 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 23.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-sustained] | PI-2 row VBAT 3.70 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-sustained] | PI-2 row VBAT 3.70 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-sustained] | PI-2 row VBAT 3.70 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 652 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-sustained] | PI-2 row VBAT 3.70 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 334 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-moving] | PI-2 row VBAT 3.70 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-moving] | PI-2 row VBAT 3.70 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 22.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-moving] | PI-2 row VBAT 3.70 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.4 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-moving] | PI-2 row VBAT 3.70 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-moving] | PI-2 row VBAT 3.70 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 622 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.7-moving] | PI-2 row VBAT 3.70 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 425 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-burst] | PI-2 row VBAT 3.75 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-burst] | PI-2 row VBAT 3.75 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 24.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-burst] | PI-2 row VBAT 3.75 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-burst] | PI-2 row VBAT 3.75 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-burst] | PI-2 row VBAT 3.75 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 684 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-burst] | PI-2 row VBAT 3.75 burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 462 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-sustained] | PI-2 row VBAT 3.75 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-sustained] | PI-2 row VBAT 3.75 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 26.6 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-sustained] | PI-2 row VBAT 3.75 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.37 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-sustained] | PI-2 row VBAT 3.75 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-sustained] | PI-2 row VBAT 3.75 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 744 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-sustained] | PI-2 row VBAT 3.75 sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 420 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-moving] | PI-2 row VBAT 3.75 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-moving] | PI-2 row VBAT 3.75 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 25.6 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-moving] | PI-2 row VBAT 3.75 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.42 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-moving] | PI-2 row VBAT 3.75 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-moving] | PI-2 row VBAT 3.75 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 713 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.75-moving] | PI-2 row VBAT 3.75 moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 510 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-burst] | PI-2 row VBAT 3.80 burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-burst] | PI-2 row VBAT 3.80 burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 30.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-burst] | PI-2 row VBAT 3.80 burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.35 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-burst] | PI-2 row VBAT 3.80 burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-burst] | PI-2 row VBAT 3.80 burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 856 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-burst] | PI-2 row VBAT 3.80 burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 481 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-sustained] | PI-2 row VBAT 3.80 sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-sustained] | PI-2 row VBAT 3.80 sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 31.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-sustained] | PI-2 row VBAT 3.80 sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-sustained] | PI-2 row VBAT 3.80 sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-sustained] | PI-2 row VBAT 3.80 sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 870 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-sustained] | PI-2 row VBAT 3.80 sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 422 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-moving] | PI-2 row VBAT 3.80 moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-moving] | PI-2 row VBAT 3.80 moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 30.1 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-moving] | PI-2 row VBAT 3.80 moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-moving] | PI-2 row VBAT 3.80 moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-moving] | PI-2 row VBAT 3.80 moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 836 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.8-moving] | PI-2 row VBAT 3.80 moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 513 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-burst] | PI-2 row VBAT 3.90 burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-burst] | PI-2 row VBAT 3.90 burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 31.8 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-burst] | PI-2 row VBAT 3.90 burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.43 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-burst] | PI-2 row VBAT 3.90 burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-burst] | PI-2 row VBAT 3.90 burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 880 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-burst] | PI-2 row VBAT 3.90 burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 481 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-sustained] | PI-2 row VBAT 3.90 sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-sustained] | PI-2 row VBAT 3.90 sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 31.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-sustained] | PI-2 row VBAT 3.90 sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.44 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-sustained] | PI-2 row VBAT 3.90 sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-sustained] | PI-2 row VBAT 3.90 sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 884 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-sustained] | PI-2 row VBAT 3.90 sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 417 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-moving] | PI-2 row VBAT 3.90 moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-moving] | PI-2 row VBAT 3.90 moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 30.3 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-moving] | PI-2 row VBAT 3.90 moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.49 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-moving] | PI-2 row VBAT 3.90 moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-moving] | PI-2 row VBAT 3.90 moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 837 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_with_fw_rule[3.9-moving] | PI-2 row VBAT 3.90 moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 504 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-sustained] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-sustained] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 16 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-sustained] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-sustained] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-sustained] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 429 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-sustained] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, sustained (LED cap 100 mA, 0.26 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 273 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-moving] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-moving] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 14.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-moving] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-moving] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-moving] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 394 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.53-moving] | PI-2 row picked from VBAT_est 3.53 V (reading 3.6057 V, 75.7 mV = 2.1% high), true VBAT 3.530 V, moving (LED cap 100 mA, 0.03 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 352 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-burst] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-burst] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 18.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-burst] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-burst] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-burst] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 508 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-burst] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, burst (LED cap 300 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 447 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-sustained] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-sustained] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 18.5 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-sustained] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-sustained] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-sustained] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 503 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-sustained] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, sustained (LED cap 150 mA, 0.33 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 320 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-moving] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-moving] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 17.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-moving] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-moving] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-moving] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 460 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.6-moving] | PI-2 row picked from VBAT_est 3.60 V (reading 3.6772 V, 77.2 mV = 2.1% high), true VBAT 3.600 V, moving (LED cap 100 mA, 0.10 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 413 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-burst] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-burst] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 21.8 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-burst] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-burst] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-burst] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 598 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-burst] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, burst (LED cap 300 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 456 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-sustained] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-sustained] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 21.3 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-sustained] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.35 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-sustained] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-sustained] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 581 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-sustained] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, sustained (LED cap 150 mA, 0.42 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 329 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-moving] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-moving] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 20.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-moving] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.4 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-moving] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-moving] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 545 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.65-moving] | PI-2 row picked from VBAT_est 3.65 V (reading 3.7283 V, 78.3 mV = 2.1% high), true VBAT 3.650 V, moving (LED cap 100 mA, 0.19 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 419 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-burst] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-burst] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 24.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-burst] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-burst] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-burst] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 686 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-burst] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 464 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-sustained] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-sustained] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 23.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-sustained] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-sustained] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-sustained] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 652 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-sustained] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 334 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-moving] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-moving] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 22.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-moving] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.4 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-moving] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-moving] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 622 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.7-moving] | PI-2 row picked from VBAT_est 3.70 V (reading 3.7794 V, 79.4 mV = 2.1% high), true VBAT 3.700 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 425 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-burst] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-burst] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 24.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-burst] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-burst] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-burst] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 684 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-burst] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, burst (LED cap 300 mA, 0.51 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 462 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-sustained] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-sustained] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 26.6 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-sustained] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.37 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-sustained] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-sustained] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 744 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-sustained] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, sustained (LED cap 150 mA, 0.51 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 420 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-moving] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-moving] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 25.6 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-moving] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.42 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-moving] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-moving] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 713 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.75-moving] | PI-2 row picked from VBAT_est 3.75 V (reading 3.8304 V, 80.4 mV = 2.1% high), true VBAT 3.750 V, moving (LED cap 100 mA, 0.28 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 510 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-burst] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-burst] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 30.9 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-burst] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.35 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-burst] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-burst] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 856 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-burst] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, burst (LED cap 300 mA, 0.69 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 481 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-sustained] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-sustained] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 31.2 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-sustained] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-sustained] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-sustained] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 870 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-sustained] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, sustained (LED cap 150 mA, 0.69 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 422 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-moving] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-moving] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 30.1 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-moving] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-moving] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-moving] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 836 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.8-moving] | PI-2 row picked from VBAT_est 3.80 V (reading 3.8815 V, 81.5 mV = 2.1% high), true VBAT 3.800 V, moving (LED cap 100 mA, 0.46 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 513 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-burst] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-burst] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 31.8 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-burst] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.43 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-burst] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-burst] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 880 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-burst] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, burst (LED cap 300 mA, 0.72 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 481 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-sustained] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-sustained] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 31.7 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-sustained] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.44 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-sustained] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-sustained] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 884 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-sustained] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, sustained (LED cap 150 mA, 0.72 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 417 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-moving] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-moving] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 30.3 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-moving] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.49 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-moving] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-moving] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 837 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_led_peak_budget_table_reading_high_with_fw_rule[3.9-moving] | PI-2 row picked from VBAT_est 3.90 V (reading 3.9837 V, 83.7 mV = 2.1% high), true VBAT 3.900 V, moving (LED cap 100 mA, 0.49 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 504 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-2 (docs/firmware.md 6.3, R3): lit channels x I_ch <= 0.19/0.26/0.33/0.42/0.51/0.69 A at VBAT_est 3.48/3.53/3.60/3.65/3.70/3.80 V, full ring >= 3.90 V, 0.23 A less while the actuator moves; OLED C7 <= 08h below VBAT_est 3.75 V and during bursts (OLED-BST-2); row, derating and OLED level picked from VBAT_est = 0.979 x calibrated reading, which covers a reading up to 2.1 % high (worst over-read ~2.0-2.1 %, aged, -10/60 C; R1', docs/firmware.md 12.4, VSENSE-1/4/5) | ✅ |
test_temperature_capped_full_budget[-10.0] | capped DC full@3.65 at -10 C: V(BAT) (BUVLO) | 3.51 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_temperature_capped_full_budget[-10.0] | capped DC full@3.65 at -10 C: VLED min | 3.38 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_temperature_capped_full_budget[-10.0] | capped DC full@3.65 at -10 C: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_temperature_capped_full_budget[-10.0] | capped DC full@3.65 at -10 C: I(BAT) peak | 570 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_temperature_capped_full_budget[-10.0] | capped DC full@3.65 at -10 C: I(SYS) DC | 570 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_temperature_capped_full_budget[25.0] | capped DC full@3.65 at +25 C: V(BAT) (BUVLO) | 3.51 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_temperature_capped_full_budget[25.0] | capped DC full@3.65 at +25 C: VLED min | 3.38 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_temperature_capped_full_budget[25.0] | capped DC full@3.65 at +25 C: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_temperature_capped_full_budget[25.0] | capped DC full@3.65 at +25 C: I(BAT) peak | 570 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_temperature_capped_full_budget[25.0] | capped DC full@3.65 at +25 C: I(SYS) DC | 570 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_temperature_capped_full_budget[60.0] | capped DC full@3.65 at +60 C: V(BAT) (BUVLO) | 3.51 V | 3 V … – | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch | ✅ |
test_temperature_capped_full_budget[60.0] | capped DC full@3.65 at +60 C: VLED min | 3.37 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_temperature_capped_full_budget[60.0] | capped DC full@3.65 at +60 C: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_temperature_capped_full_budget[60.0] | capped DC full@3.65 at +60 C: I(BAT) peak | 571 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_temperature_capped_full_budget[60.0] | capped DC full@3.65 at +60 C: I(SYS) DC | 571 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_vbat_3v0_end_of_discharge[nominal] | VBAT 3.0 V, LEDs/OLED/motor off, nominal: +3V3 min | 2.97 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_vbat_3v0_end_of_discharge[worst] | VBAT 3.0 V, LEDs/OLED/motor off, worst: +3V3 min | 2.94 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: VLED max | 4.29 V | – … 5.3 V | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: VSYS max | 4.29 V | – … 5.5 V | TPS22917 DS SLVSDW8B 7.3 VIN <= 5.5 V; RT9080 DS9080-09 12 VIN <= 5.5 V | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: I(BAT) peak | 546 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_vbus_corners[4.5] | USB VBUS 4.5 V, pack 3.7 V, on-USB caps: I(SYS) DC | 508 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: VLED max | 4.39 V | – … 5.3 V | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: VSYS max | 4.39 V | – … 5.5 V | TPS22917 DS SLVSDW8B 7.3 VIN <= 5.5 V; RT9080 DS9080-09 12 VIN <= 5.5 V | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: I(BAT) peak | 541 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_vbus_corners[5.0] | USB VBUS 5.0 V, pack 3.7 V, on-USB caps: I(SYS) DC | 495 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: VLED max | 4.58 V | – … 5.3 V | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: VSYS max | 4.58 V | – … 5.5 V | TPS22917 DS SLVSDW8B 7.3 VIN <= 5.5 V; RT9080 DS9080-09 12 VIN <= 5.5 V | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: I(IN) peak | 498 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: VLED min | 3.46 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: I(BAT) peak | 540 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_vbus_corners[5.5] | USB VBUS 5.5 V, pack 3.7 V, on-USB caps: I(SYS) DC | 436 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_without_battery[ILIM500-on-USB-budget] | USB only (no pack), ILIM 500 mA code at min (450 mA), firmware budget: I(IN) (pinned at ILIM = no regulation) | 450 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement) | ❌ |
test_usb_without_battery[ILIM100-boot-budget] | USB only (no pack), ILIM 100 mA code at min (80 mA), firmware budget: I(IN) (pinned at ILIM = no regulation) | 80 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement) | ❌ |
test_usb_without_battery_with_fw_rule[ILIM100-nominal] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.400 V, nominal: I(IN) (pinned at ILIM = no regulation) | 50.5 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-nominal] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.400 V, nominal: VLED | 4.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-nominal] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.400 V, nominal: +3V3 | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-nominal] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.400 V, nominal: documented profile total (70 mA) | 70 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-worst] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.312 V, worst: I(IN) (pinned at ILIM = no regulation) | 50.5 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-worst] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.312 V, worst: VLED | 4.3 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-worst] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.312 V, worst: +3V3 | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-worst] | PI-4 rule, USB only (no pack), ILIM100 at ILIM min (80 mA), SYS_REG 4.312 V, worst: documented profile total (70 mA) | 70 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.400 V, nominal: I(IN) average | 44.9 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.400 V, nominal: VLED min | 4.3 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.400 V, nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.400 V, nominal: documented profile total (70 mA) | 70 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.312 V, worst: I(IN) average | 44.8 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.312 V, worst: VLED min | 4.18 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.312 V, worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM100-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM100-aligned-peak at ILIM min (80 mA), SYS_REG 4.312 V, worst: documented profile total (70 mA) | 70 mA | – … 78.4 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-nominal] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.400 V, nominal: I(IN) (pinned at ILIM = no regulation) | 249 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-nominal] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.400 V, nominal: VLED | 4.37 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-nominal] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.400 V, nominal: +3V3 | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-nominal] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.400 V, nominal: documented profile total (400 mA) | 400 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-worst] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.312 V, worst: I(IN) (pinned at ILIM = no regulation) | 251 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-worst] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.312 V, worst: VLED | 4.27 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-worst] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.312 V, worst: +3V3 | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-worst] | PI-4 rule, USB only (no pack), ILIM500 at ILIM min (450 mA), SYS_REG 4.312 V, worst: documented profile total (400 mA) | 400 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.400 V, nominal: I(IN) average | 264 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.400 V, nominal: VLED min | 4.14 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.400 V, nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-nominal] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.400 V, nominal: documented profile total (400 mA) | 400 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.312 V, worst: I(IN) average | 266 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.312 V, worst: VLED min | 3.97 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.312 V, worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_without_battery_with_fw_rule[ILIM500-aligned-peak-worst] | PI-4 rule, USB only (no pack), ILIM500-aligned-peak at ILIM min (450 mA), SYS_REG 4.312 V, worst: documented profile total (400 mA) | 400 mA | – … 441 mA | BQ25180 DS SLUSE99C 7.5 ILIM min (load must stay below it without supplement); with fw rule PI-4 (docs/firmware.md 6.3 / 13.3, SPEC 5.4): no-supplement profile, ILIM 100 mA: LEDs <= 20 mA cue, OLED off, no flash erase, TX 0 dBm, <= 70 mA; ILIM 500 mA: no actuator, LEDs <= 100 mA peak-limited, OLED C7 <= 08h, <= 400 mA | ✅ |
test_usb_low_pack[nominal-False] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, average: I(IN) | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_low_pack[nominal-False] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, average: VLED min | 3.38 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_low_pack[nominal-False] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, average: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_low_pack[nominal-False] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, average: I(BAT) peak | 86.6 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_low_pack[nominal-False] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, average: I(SYS) DC | 537 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_low_pack[worst-False] | USB 5.0 V, pack 3.48 V worst, on-USB budget, average: I(IN) | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_low_pack[worst-False] | USB 5.0 V, pack 3.48 V worst, on-USB budget, average: VLED min | 3.34 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_usb_low_pack[worst-False] | USB 5.0 V, pack 3.48 V worst, on-USB budget, average: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_low_pack[worst-False] | USB 5.0 V, pack 3.48 V worst, on-USB budget, average: I(BAT) peak | 106 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_low_pack[worst-False] | USB 5.0 V, pack 3.48 V worst, on-USB budget, average: I(SYS) DC | 556 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_low_pack[nominal-True] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, aligned PWM: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_low_pack[nominal-True] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, aligned PWM: +3V3 min | 3.28 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_low_pack[nominal-True] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, aligned PWM: I(BAT) peak | 595 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_low_pack[nominal-True] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, aligned PWM: I(SYS) DC | 435 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_low_pack[nominal-True] | USB 5.0 V, pack 3.48 V nominal, on-USB budget, aligned PWM: VLED min | 3.23 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_usb_low_pack[worst-True] | USB 5.0 V, pack 3.48 V worst, on-USB budget, aligned PWM: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A | ✅ |
test_usb_low_pack[worst-True] | USB 5.0 V, pack 3.48 V worst, on-USB budget, aligned PWM: +3V3 min | 3.19 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_usb_low_pack[worst-True] | USB 5.0 V, pack 3.48 V worst, on-USB budget, aligned PWM: I(BAT) peak | 535 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_usb_low_pack[worst-True] | USB 5.0 V, pack 3.48 V worst, on-USB budget, aligned PWM: I(SYS) DC | 472 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_usb_low_pack[worst-True] | USB 5.0 V, pack 3.48 V worst, on-USB budget, aligned PWM: VLED min | 3.1 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ❌ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: VLED min | 3.54 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(BAT) peak | 347 nA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(SYS) DC | 338 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: VLED min | 4.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(BAT) peak | -24.2 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(SYS) DC | 297 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: VLED min | 3.38 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(BAT) peak | 53.1 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(SYS) DC | 370 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: VLED min | 3.52 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(BAT) peak | 348 nA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(SYS) DC | 346 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: VLED min | 3.56 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(BAT) peak | -70.8 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(SYS) DC | 184 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: VLED min | 3.51 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(BAT) peak | 348 nA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-idle] | NF-1 rule (row3.48-idle, 0.19 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(SYS) DC | 356 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: VLED min | 4.39 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(BAT) peak | -24.6 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-row3.48-moving] | NF-1 rule (row3.48-moving, 0.00 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(SYS) DC | 325 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: VLED min | 3.35 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(BAT) peak | 52.8 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst] | NF-1 rule (total0.40-inst, 0.23 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(SYS) DC | 391 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: VLED min | 3.48 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(BAT) peak | 348 nA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-oled-off] | NF-1 rule (total0.40-inst-oled-off, 0.40 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(SYS) DC | 362 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: VLED min | 3.55 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(BAT) peak | -70.2 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-moving] | NF-1 rule (total0.40-inst-moving, 0.17 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(SYS) DC | 216 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(BAT) peak | 443 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: I(SYS) DC | 333 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V nominal: VLED min | 3.26 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ❌ |
test_usb_low_pack_with_fw_rule[worst-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(BAT) peak | 380 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: I(SYS) DC | 351 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-avg] | NF-1 rule (total0.40-avg, 0.72 A aligned LED peak), USB 5.0 V, pack 3.48 V worst: VLED min | 3.16 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ❌ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V nominal: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V nominal: +3V3 min | 3.2 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V nominal: I(BAT) peak | 61.7 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V nominal: I(SYS) DC | 355 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[nominal-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V nominal: VLED min | 3.2 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ❌ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V worst: I(IN) peak | 450 mA | – … 1.1 A | BQ25180 DS SLUSE99C 7.1 / 7.4 input current (IN to SYS) 1.1 A; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V worst: +3V3 min | 3.16 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V worst: I(BAT) peak | 61.2 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V worst: I(SYS) DC | 382 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ✅ |
test_usb_low_pack_with_fw_rule[worst-total0.40-inst-lowpack] | NF-1 rule (total0.40-inst-lowpack, 0.23 A aligned LED peak), USB 5.0 V, pack 3.3 V worst: VLED min | 3.16 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule NF-1 (docs/firmware.md 6.3 / 13.3, R7): on USB, while VBAT_est >= 3.48 V, the 3.48 V row (0.19 A) until CHG_STAT reports CV/done, or the INSTANTANEOUS on-USB sum (lit channels x I_ch + OLED boost input + actuator) <= 0.40 A, not an average | ❌ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: GND offset main-base, peak | 47 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: I2C_SCL low (nRF) seen at BQ25180 | 300 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: I2C_SCL min at BQ25180 | 269 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: I2C_SDA (BQ ACK) low at nRF minus 0.3 VDD | -930 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: I2C_SDA (BQ ACK) min at nRF | 7.92 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: CHG_INT_N low at nRF minus 0.3 VDD | -959 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: CHG_INT_N min at nRF | -21 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: BTN_N low at nRF minus 0.3 VDD | -985 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_ground_bounce_logic_levels[4.2] | uncapped sync-PWM, VBAT 4.2 worst: BTN_N min at nRF | -46.9 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: GND offset main-base, peak | 46 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: I2C_SCL low (nRF) seen at BQ25180 | 294 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: I2C_SCL min at BQ25180 | 267 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: I2C_SDA (BQ ACK) low at nRF minus 0.3 VDD | -923 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: I2C_SDA (BQ ACK) min at nRF | 7.04 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: CHG_INT_N low at nRF minus 0.3 VDD | -951 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: CHG_INT_N min at nRF | -20.8 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: BTN_N low at nRF minus 0.3 VDD | -976 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_ground_bounce_logic_levels[3.7] | uncapped sync-PWM, VBAT 3.7 worst: BTN_N min at nRF | -45.9 mV | -300 mV … – | BQ25180 DS SLUSE99C 7.1 / nRF52840 PS v1.1 9: pins >= -0.3 V | ✅ |
test_logic_levels_pullup_extremes | pull-up extremes: I2C_SCL low seen at BQ25180 | 292 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) | ✅ |
test_logic_levels_pullup_extremes | pull-up extremes: sda_marg (low minus 0.3 VDD at nRF) | -925 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_logic_levels_pullup_extremes | pull-up extremes: int_marg (low minus 0.3 VDD at nRF) | -953 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_logic_levels_pullup_extremes | pull-up extremes: btn_marg (low minus 0.3 VDD at nRF) | -978 mV | – … 0.0V | nRF52840 PS v1.1 6.9.3.1 VIL = 0.3 x VDD | ✅ |
test_led_rail_inrush[nominal] | LED rail turn-on, VBAT 3.7 nominal: +3V3 min - POFWARN limit at LED_PWR_EN (record) | 252 mV | – … – | informational (R8): nRF52840 POFWARN 2.9 V + VPOFTOL 5 % = 3.045 V (docs/firmware.md 12.4, nRF52840 PS v1.1 5.3.8.4); below 0 POFWARN fires, ignored for 10 ms after the enable | ✅ |
test_led_rail_inrush[nominal] | LED rail turn-on, VBAT 3.7 nominal: I(BAT) peak | 339 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_led_rail_inrush[nominal] | LED rail turn-on, VBAT 3.7 nominal: TPS22917 switch current peak | 91.2 mA | – … 2.5 A | TPS22917 DS SLVSDW8B 7.1 IPLS 2.5 A (pulse < 300 us, 2 % duty) | ✅ |
test_led_rail_inrush[nominal] | LED rail turn-on, VBAT 3.7 nominal: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_led_rail_inrush[worst] | LED rail turn-on, VBAT 3.7 worst, C7/C8/C9 extremes: +3V3 min - POFWARN limit at LED_PWR_EN (record) | 186 mV | – … – | informational (R8): nRF52840 POFWARN 2.9 V + VPOFTOL 5 % = 3.045 V (docs/firmware.md 12.4, nRF52840 PS v1.1 5.3.8.4); below 0 POFWARN fires, ignored for 10 ms after the enable | ✅ |
test_led_rail_inrush[worst] | LED rail turn-on, VBAT 3.7 worst, C7/C8/C9 extremes: I(BAT) peak | 369 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_led_rail_inrush[worst] | LED rail turn-on, VBAT 3.7 worst, C7/C8/C9 extremes: TPS22917 switch current peak | 117 mA | – … 2.5 A | TPS22917 DS SLVSDW8B 7.1 IPLS 2.5 A (pulse < 300 us, 2 % duty) | ✅ |
test_led_rail_inrush[worst] | LED rail turn-on, VBAT 3.7 worst, C7/C8/C9 extremes: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_mlcc_dc_bias_stress | all MLCC x0.5, full@3.70 nominal, aligned PWM: GND offset main-base, peak | 21.5 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone) | ✅ |
test_mlcc_dc_bias_stress | all MLCC x0.5, full@3.70 nominal, aligned PWM: VLED min | 3.41 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_mlcc_dc_bias_stress | all MLCC x0.5, full@3.70 nominal, aligned PWM: +3V3 min | 3.3 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_mlcc_dc_bias_stress | all MLCC x0.5, full@3.70 nominal, aligned PWM: I(BAT) peak | 989 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_mlcc_dc_bias_stress | all MLCC x0.5, full@3.70 nominal, aligned PWM: I(SYS) DC | 596 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_fault_ct_cap_missing_detected | FAULT C7 off: I(BAT) peak exceeds IBAT_OCP (detected) | 2.23 A | 1.5 A … – | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_fault_stiff_i2c_pullup_detected | FAULT R53 = 1k: SCL low seen at BQ25180 exceeds VIL (detected) | 933 mV | 400 mV … – | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) | ✅ |
test_vsys_decoupling_vs_datasheets | BQ25180 SYS, base-board VSYS caps (nominal) | 20 µF | 10 µF … – | BQ25180 DS SLUSE99C 6 Pin Functions SYS: connect at least 10 uF ceramic; 9.2.2.3 Table 9-2 CSYS nom 10 uF | ✅ |
test_vsys_decoupling_vs_datasheets | BQ25180 SYS, all VSYS caps on both boards at +tol (behind-switch VLED/OLED_VIN caps excluded) | 97.6 µF | – … 100 µF | BQ25180 DS SLUSE99C 9.2.2.3 Table 9-2 CSYS max 100 uF | ✅ |
test_vsys_decoupling_vs_datasheets | BQ25180 BAT, base-board VBAT caps at -tol | 4.23 µF | 1 µF … – | BQ25180 DS SLUSE99C 9.2.2.3 Table 9-2 CBAT min 1 uF | ✅ |
test_vsys_decoupling_vs_datasheets | BQ25180 IN, base-board VBUS caps at -tol | 1.98 µF | 1 µF … – | BQ25180 DS SLUSE99C 9.2.2.3 Table 9-2 CIN 1-10 uF | ✅ |
test_vsys_decoupling_vs_datasheets | BQ25180 IN, VBUS caps on both boards at +tol | 2.42 µF | – … 10 µF | BQ25180 DS SLUSE99C 9.2.2.3 Table 9-2 CIN 1-10 uF | ✅ |
test_vsys_decoupling_vs_datasheets | main VSYS caps at -tol vs local-bypass minimums (RT9080 1 uF + 2 x TPS22917 1 uF + 2 x DRV8837 0.1 uF = 3.2 uF) | 50.8 µF | 3.2 µF … – | RT9080 DS9080-09 8 Functional Pin Description VIN 1 uF; TPS22917 SLVSDW8B 11 Power Supply Recommendations CIN 1 uF; DRV8837 SLVSBA4F 5 Pin Functions VM 0.1 uF | ✅ |
test_fault_base_sys_caps_low_detected | FAULT base SYS caps 1 uF: BQ25180 SYS, base-board VSYS caps (nominal) below the DS minimum (detected) | 2 µF | – … 9.99 µF | BQ25180 DS SLUSE99C 6 Pin Functions SYS: connect at least 10 uF ceramic; 9.2.2.3 Table 9-2 CSYS nom 10 uF | ✅ |
test_fault_main_vsys_bulk_missing_detected | FAULT main VSYS bulk off: main VSYS caps at -tol vs local-bypass minimums (RT9080 1 uF + 2 x TPS22917 1 uF + 2 x DRV8837 0.1 uF = 3.2 uF) (detected) | 180 nF | – … 3.2 µF | RT9080 DS9080-09 8 Functional Pin Description VIN 1 uF; TPS22917 SLVSDW8B 11 Power Supply Recommendations CIN 1 uF; DRV8837 SLVSBA4F 5 Pin Functions VM 0.1 uF | ✅ |
test_fault_battery_connector_single_contact_detected | FAULT battery connector, one VBAT contact: current per contact exceeds the rating (detected) | 1.35 A | 1 A … – | JST SH DS current rating per contact | ✅ |
test_fault_shorted_led_detected | FAULT shorted LED: I(BAT) peak exceeds IBAT_OCP (detected) | 11 A | 1.5 A … – | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_fault_shorted_led_detected | FAULT shorted LED: TPS22917 U2 current peak exceeds IPLS (no current limit; detected) | 24.7 A | 2.5 A … – | TPS22917 DS SLVSDW8B 7.1 IPLS 2.5 A (pulse < 300 us, 2 % duty) | ✅ |
test_ws2812b_dropin_peak | WS2812B drop-in, 300 mA cap, aligned PWM: I(BAT) peak | 1.85 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ❌ |
test_ws2812b_dropin_peak_with_fw_rule[nominal] | WS2812B drop-in with the PI-3 instantaneous cap (1.0 A aligned), 300 mA cap, VBAT 4.2 V nominal: I(BAT) peak | 1.23 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_peak_with_fw_rule[worst] | WS2812B drop-in with the PI-3 instantaneous cap (1.0 A aligned), 300 mA cap, VBAT 4.2 V worst: I(BAT) peak | 1.2 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | info: WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: VLED min above the 3.3 V limit | 17.8 mV | – … – | info: R3 derating margin 10 mV (docs/firmware.md 6.3); VBAT_est 3.92 V is a reading of 4.0041 V (R1') | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: GND offset main-base, peak | 40.5 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: VLED min | 3.32 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: I(BAT) peak | 1.12 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[burst] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, burst (LED cap 300 mA, 1.00 A aligned peak, OLED 23.6 mA) worst: I(SYS) DC | 506 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | info: WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: VLED min above the 3.3 V limit | 64 mV | – … – | info: R3 derating margin 10 mV (docs/firmware.md 6.3); VBAT_est 3.92 V is a reading of 4.0041 V (R1') | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 37.5 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.36 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 1.03 A | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[sustained] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, sustained (LED cap 150 mA, 1.00 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 418 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | info: WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: VLED min above the 3.3 V limit | 123 mV | – … – | info: R3 derating margin 10 mV (docs/firmware.md 6.3); VBAT_est 3.92 V is a reading of 4.0041 V (R1') | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: V(BAT) below BUVLO, longest | 0.0s | – … 60 µs | BQ25180 DS SLUSE99C 7.5 VBUVLO 3.0 V (BUVLO = 010), 7.6 tBUVLO 60 us deglitch; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: GND offset main-base, peak | 35.8 mV | – … 400 mV | BQ25180 DS SLUSE99C 7.5 I2C VIL 0.4 V (SCL/SDA) (offset alone); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: VLED min | 3.42 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: I(BAT) peak | 978 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92); with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_ws2812b_dropin_threshold_with_fw_rule[moving] | WS2812B drop-in, PI-3 cap from VBAT_est 3.92 V, true VBAT 3.920 V, moving (LED cap 100 mA, 0.77 A aligned peak, OLED 42.0 mA) worst: I(SYS) DC | 504 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC; with fw rule PI-3 (docs/firmware.md 6.1 / 6.3, SPEC 5.4, R10): the WS2812B variant only with the instantaneous cap, 1.0 A from VBAT_est >= 3.92 V, the PI-2 rows (A) below | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.48 (worst corner, actuator idle) | 186 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.53 (worst corner, actuator idle) | 276 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.60 (worst corner, actuator idle) | 330 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.65 (worst corner, actuator idle) | 420 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.70 (worst corner, actuator idle) | 512 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.80 (worst corner, actuator idle) | 695 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 3.90 (worst corner, actuator idle) | 720 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 4.00 (worst corner, actuator idle) | 720 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | max aligned ring peak for VLED >= 3.3 V, VBAT 4.20 (worst corner, actuator idle) | 720 mA | 0.0A … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget; full ring = 0.72 A) | ✅ |
test_led_peak_budget_vs_vbat | full-ring aligned peak allowed at VBAT 4.20 V (worst corner) | 720 mA | 720 mA … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V (derived budget) | ✅ |
test_proposed_peak_cap_fix[3.53] | peak-capped ring (0.26 A aligned), VBAT 3.53 worst: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_proposed_peak_cap_fix[3.53] | peak-capped ring (0.26 A aligned), VBAT 3.53 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_proposed_peak_cap_fix[3.53] | peak-capped ring (0.26 A aligned), VBAT 3.53 worst: I(BAT) peak | 431 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_proposed_peak_cap_fix[3.53] | peak-capped ring (0.26 A aligned), VBAT 3.53 worst: I(SYS) DC | 273 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_proposed_peak_cap_fix[3.65] | peak-capped ring (0.40 A aligned), VBAT 3.65 worst: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_proposed_peak_cap_fix[3.65] | peak-capped ring (0.40 A aligned), VBAT 3.65 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_proposed_peak_cap_fix[3.65] | peak-capped ring (0.40 A aligned), VBAT 3.65 worst: I(BAT) peak | 674 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_proposed_peak_cap_fix[3.65] | peak-capped ring (0.40 A aligned), VBAT 3.65 worst: I(SYS) DC | 545 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_proposed_peak_cap_fix[3.7] | peak-capped ring (0.49 A aligned), VBAT 3.7 worst: VLED min | 3.31 V | 3.3 V … – | WS2812C-2020-V6 DS (Worldsemi) p.2 max ratings: VDD 3.3-5.3 V | ✅ |
test_proposed_peak_cap_fix[3.7] | peak-capped ring (0.49 A aligned), VBAT 3.7 worst: +3V3 min | 3.23 V | 2.7 V … – | W25Q128JV DS Rev F 9.2 VCC >= 2.7 V (binding); nRF52840 PS v1.1 8 VDD >= 1.7 V; TMAG5273 DS SLYS045C 5.3 VCC >= 1.7 V | ✅ |
test_proposed_peak_cap_fix[3.7] | peak-capped ring (0.49 A aligned), VBAT 3.7 worst: I(BAT) peak | 758 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.5 IBAT_OCP 1.5 A (CHARGECTRL1 = 0x92) | ✅ |
test_proposed_peak_cap_fix[3.7] | peak-capped ring (0.49 A aligned), VBAT 3.7 worst: I(SYS) DC | 552 mA | – … 1.5 A | BQ25180 DS SLUSE99C 7.1 SYS discharge current 1.5 A DC | ✅ |
test_gpio_sleep_states_from_firmware_doc | connected nRF GPIOs without a firmware.md §1.3 sleep state | 0pins | – … 0pins | docs/firmware.md §1.3 GPIO configuration vs netlist U10 [] | ✅ |
test_gpio_sleep_states_from_firmware_doc | firmware.md §1.3 pin numbers that disagree with the netlist | 0pins | – … 0pins | docs/firmware.md §1.3 vs hardware/design/nets.py [] | ✅ |
test_sleep_operating_point_is_consistent | KCL: sum of ground returns vs battery current | 2.28 µ | – … 10 m | harness self-check (Kirchhoff) | ✅ |
test_sleep_operating_point_is_consistent | +3V3 at VBAT 3.7 V | 3.3 V | 3.23 V … 3.37 V | RT9080 DS9080-09 EC table VOUT accuracy ±2 % | ✅ |
test_sleep_operating_point_is_consistent | LED_PWR_EN (U2 ON) in sleep | 0.0V | – … 350 mV | TPS22917 SLVSDW8B §7.3 Recommended Operating Conditions VIL(ON) 0.35 V max | ✅ |
test_sleep_operating_point_is_consistent | OLED_VCC_EN (U21 ON) in sleep | 0.0V | – … 350 mV | TPS22917 SLVSDW8B §7.3 Recommended Operating Conditions VIL(ON) 0.35 V max | ✅ |
test_sleep_operating_point_is_consistent | MOT_NSLEEP in sleep | 0.0V | – … 825 mV | DRV8837 SLVSBA4F §6.5 VIL 0.25 x VCC min | ✅ |
test_sleep_operating_point_is_consistent | VLED held off by U2 QOD | 2.18 µV | – … 100 mV | SPEC §5.4 / architecture §7: LEDs unpowered in sleep (WS2812C not modelled above 0 V) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] oled: sim vs architecture §8.2 line 17.6 µA | 17.6 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] bq: sim vs architecture §8.2 line 4.0 µA | 4 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] tmag: sim vs architecture §8.2 line 3.0 µA | 3.03 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] pcm: sim vs architecture §8.2 line 3.0 µA | 3 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] nrf: sim vs architecture §8.2 line 3.0 µA | 2.77 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] ldo: sim vs architecture §8.2 line 2.0 µA | 2 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] hall: sim vs architecture §8.2 line 1.6 µA | 1.7 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] vsys_div: sim vs architecture §8.2 line 1.2 µA | 1.16 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] flash: sim vs architecture §8.2 line 1.0 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] imu: sim vs architecture §8.2 line 1.5 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | [nominal] drv8837: sim vs architecture §8.2 line 0.1 µA | 70 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_breakdown_and_top_contributors | top 1: XU21 (oled) | 5.32 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 2: Rmain_R27 (oled) | 4.91 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 3: XJ20 (oled) | 4 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 4: Rmain_R20 (oled) | 3.3 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 5: XU30 (tmag) | 3.03 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 6: Ipcm (pcm) | 3 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 7: XBQ_U1 (bq) | 2.8 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_breakdown_and_top_contributors | top 8: XU10 (nrf) | 2.77 µA | – … – | informational (ground return per element) | ✅ |
test_sleep_total_within_budget_vs_vbat[3.0] | sleep battery current at VBAT 3.0 V (typ, 25 C) | 36 µA | – … 38 µA | docs/architecture.md §8.2 sleep column (sum of lines) | ✅ |
test_sleep_total_within_budget_vs_vbat[3.7] | sleep battery current at VBAT 3.7 V (typ, 25 C) | 37.4 µA | – … 38 µA | docs/architecture.md §8.2 sleep column (sum of lines) | ✅ |
test_sleep_total_within_budget_vs_vbat[4.2] | sleep battery current at VBAT 4.2 V (typ, 25 C) | 37.5 µA | – … 38 µA | docs/architecture.md §8.2 sleep column (sum of lines) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] oled: sim vs architecture §8.2 line 17.6 µA | 13.1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] bq: sim vs architecture §8.2 line 4.0 µA | 4 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] tmag: sim vs architecture §8.2 line 3.0 µA | 3.03 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] pcm: sim vs architecture §8.2 line 3.0 µA | 3 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] ldo: sim vs architecture §8.2 line 2.0 µA | 2 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] hall: sim vs architecture §8.2 line 1.6 µA | 1.71 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] nrf: sim vs architecture §8.2 line 3.0 µA | 1.45 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] vsys_div: sim vs architecture §8.2 line 1.2 µA | 1.16 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] flash: sim vs architecture §8.2 line 1.0 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] imu: sim vs architecture §8.2 line 1.5 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | [-10 C] drv8837: sim vs architecture §8.2 line 0.1 µA | 70 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[-10.0] | sleep battery current at -10 C (typ, VBAT 3.7 V; 25 C budget 38.01 µA) | 31.5 µA | – … – | informational | ✅ |
test_sleep_temperature_sweep[-10.0] | D21 reverse current at -10 C | 987 mµA | – … – | informational | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] oled: sim vs architecture §8.2 line 17.6 µA | 17.6 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] bq: sim vs architecture §8.2 line 4.0 µA | 4 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] tmag: sim vs architecture §8.2 line 3.0 µA | 3.03 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] pcm: sim vs architecture §8.2 line 3.0 µA | 3 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] nrf: sim vs architecture §8.2 line 3.0 µA | 2.77 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] ldo: sim vs architecture §8.2 line 2.0 µA | 2 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] hall: sim vs architecture §8.2 line 1.6 µA | 1.7 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] vsys_div: sim vs architecture §8.2 line 1.2 µA | 1.16 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] flash: sim vs architecture §8.2 line 1.0 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] imu: sim vs architecture §8.2 line 1.5 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | [+25 C] drv8837: sim vs architecture §8.2 line 0.1 µA | 70 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[25.0] | sleep battery current at +25 C (typ, VBAT 3.7 V; 25 C budget 38.01 µA) | 37.4 µA | – … – | informational | ✅ |
test_sleep_temperature_sweep[25.0] | D21 reverse current at +25 C | 5.41 µA | – … – | informational | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] oled: sim vs architecture §8.2 line 17.6 µA | 42.2 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] nrf: sim vs architecture §8.2 line 3.0 µA | 10.8 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] bq: sim vs architecture §8.2 line 4.0 µA | 4 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] tmag: sim vs architecture §8.2 line 3.0 µA | 3.03 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] pcm: sim vs architecture §8.2 line 3.0 µA | 3 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] ldo: sim vs architecture §8.2 line 2.0 µA | 2 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] hall: sim vs architecture §8.2 line 1.6 µA | 1.7 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] vsys_div: sim vs architecture §8.2 line 1.2 µA | 1.16 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] flash: sim vs architecture §8.2 line 1.0 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] imu: sim vs architecture §8.2 line 1.5 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | [+60 C] drv8837: sim vs architecture §8.2 line 0.1 µA | 70 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_temperature_sweep[60.0] | sleep battery current at +60 C (typ, VBAT 3.7 V; 25 C budget 38.01 µA) | 70 µA | – … – | informational | ✅ |
test_sleep_temperature_sweep[60.0] | D21 reverse current at +60 C | 29.9 µA | – … – | informational | ✅ |
test_boost_is_really_off_in_sleep[-10.0] | OLED_VIN in sleep at -10 C | 134 µV | – … – | informational | ✅ |
test_boost_is_really_off_in_sleep[-10.0] | U20 TPS61040 current in sleep at -10 C | 100 mµA | – … 2 µA | TPS61040 SLVS413L §5.5 ISD 1 µA max + II 1 µA max; architecture §6.3 'boost input draws 0 µA' | ✅ |
test_boost_is_really_off_in_sleep[25.0] | OLED_VIN in sleep at +25 C | 798 µV | – … – | informational | ✅ |
test_boost_is_really_off_in_sleep[25.0] | U20 TPS61040 current in sleep at +25 C | 101 mµA | – … 2 µA | TPS61040 SLVS413L §5.5 ISD 1 µA max + II 1 µA max; architecture §6.3 'boost input draws 0 µA' | ✅ |
test_boost_is_really_off_in_sleep[60.0] | OLED_VIN in sleep at +60 C | 4.47 mV | – … – | informational | ✅ |
test_boost_is_really_off_in_sleep[60.0] | U20 TPS61040 current in sleep at +60 C | 105 mµA | – … 2 µA | TPS61040 SLVS413L §5.5 ISD 1 µA max + II 1 µA max; architecture §6.3 'boost input draws 0 µA' | ✅ |
test_boost_enable_pin_in_shutdown_in_sleep[-10.0] | U20 EN in sleep at -10 C | 134 µV | – … 400 mV | TPS61040 SLVS413L §5.5 VIL 0.4 V max (shutdown, ISD condition EN = GND); architecture §6.3 boost off | ✅ |
test_boost_enable_pin_in_shutdown_in_sleep[25.0] | U20 EN in sleep at +25 C | 798 µV | – … 400 mV | TPS61040 SLVS413L §5.5 VIL 0.4 V max (shutdown, ISD condition EN = GND); architecture §6.3 boost off | ✅ |
test_boost_enable_pin_in_shutdown_in_sleep[60.0] | U20 EN in sleep at +60 C | 4.47 mV | – … 400 mV | TPS61040 SLVS413L §5.5 VIL 0.4 V max (shutdown, ISD condition EN = GND); architecture §6.3 boost off | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] U20 current at -10 C | 195 mµA | – … 2 µA | TPS61040 SLVS413L §5.5 ISD 1 µA max + II 1 µA max | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] sleep battery current at -10 C | 30.7 µA | – … – | informational | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] U20 current at +25 C | 197 mµA | – … 2 µA | TPS61040 SLVS413L §5.5 ISD 1 µA max + II 1 µA max | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] sleep battery current at +25 C | 32.2 µA | – … – | informational | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] U20 current at +60 C | 200 mµA | – … 2 µA | TPS61040 SLVS413L §5.5 ISD 1 µA max + II 1 µA max | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] sleep battery current at +60 C | 40.4 µA | – … – | informational | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] OLED + boost sleep current, datasheet max, 25 C | 41.9 µA | – … – | informational (architecture §8.2 claims 35–40 µA max) | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] D21 reverse current (typ, 25 C) | 187 mµA | – … – | informational (schematic, U21 QOD tied to OLED_VIN: 5.41 µA) | ✅ |
test_boost_fix_whatif_en_held_low | sleep current cost of the built SLP-1 fix (QOD tied) over the EN-low alternative (typ, 25 C) | 5.19 µA | – … – | informational (D21 reverse leakage sunk by U21 QOD) | ✅ |
test_boost_fix_whatif_en_held_low | [what-if EN low, QOD open] sleep battery current (typ, 25 C) | 32.2 µA | – … 38 µA | docs/architecture.md §8.2 sleep column (sum of lines) | ✅ |
test_oled_sleep_within_architecture_max[25.0] | OLED + boost sleep current, datasheet max, +25 C | 45.4 µA | – … 46 µA | docs/architecture.md §8.2 OLED row 'maximum …' | ✅ |
test_oled_sleep_within_architecture_max[60.0] | OLED + boost sleep current, datasheet max, +60 C | 70 µA | – … 72 µA | docs/architecture.md §8.2 OLED row 'maximum …' | ✅ |
test_sleep_max_corner | [max] oled: sim vs architecture §8.2 line 17.6 µA | 45.4 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] flash: sim vs architecture §8.2 line 1.0 µA | 22 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] bq: sim vs architecture §8.2 line 4.0 µA | 7.94 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] ldo: sim vs architecture §8.2 line 2.0 µA | 4 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] hall: sim vs architecture §8.2 line 1.6 µA | 3.73 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] tmag: sim vs architecture §8.2 line 3.0 µA | 3.26 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] pcm: sim vs architecture §8.2 line 3.0 µA | 3 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] nrf: sim vs architecture §8.2 line 3.0 µA | 2.77 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] vsys_div: sim vs architecture §8.2 line 1.2 µA | 1.16 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] imu: sim vs architecture §8.2 line 1.5 µA | 1 µA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] button: sim vs architecture §8.2 line - µA | 557 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] drv8837: sim vs architecture §8.2 line 0.1 µA | 240 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | [max] leds: sim vs architecture §8.2 line 0.01 µA | 100 mµA | – … – | informational breakdown (ground returns by subsystem) | ✅ |
test_sleep_max_corner | sleep battery current, datasheet-max corner, 25 C | 95.2 µA | – … – | informational (no max budget in architecture.md) | ✅ |
test_vsys_sense_divider | VSYS_SENSE divider current at VBAT 3.7 V | 1.16 µA | – … 1.2 µA | docs/architecture.md §8.2 'VSYS_SENSE divider' (3.7 V / 3.2 MΩ); SPEC §3 '~1.3 µA' | ✅ |
test_drv8837_pair_sleep_current | 2x DRV8837 sleep current (typ) | 70 mµA | – … 240 mµA | SPEC §3 'DRV8837 ×2 ... sleep ≤ 0.24 µA' (SLVSBA4F IVMQ + IVCCQ) | ✅ |
test_drv8837_pair_sleep_current | 2x DRV8837 sleep current (max) | 240 mµA | – … 240 mµA | SPEC §3 'DRV8837 ×2 ... sleep ≤ 0.24 µA' (SLVSBA4F IVMQ + IVCCQ) | ✅ |
test_drv5032_and_ldo_quiescent | DRV5032FA average supply current at +3V3 | 1.7 µA | – … 2 µA | SPEC §5.6 'DRV5032FADBZR ... (≤ 2 µA avg)' | ✅ |
test_drv5032_and_ldo_quiescent | RT9080 ground current at the sleep load (IQ model) | 2 µA | – … 2 µA | SPEC §3 'LDO ... Iq ≤ 2 µA' | ✅ |
test_tmag_wake_interval_corners | TMAG5273 W&S average current at 100 ms (at the budget's stated resolution) | 3 µA | – … 3 µA | docs/architecture.md §8.2 TMAG5273 sleep line (100 ms, 'about 3 µA') | ✅ |
test_tmag_wake_interval_corners | TMAG5273 W&S average current at 10 ms (at the budget's stated resolution) | 20 µA | – … 20 µA | docs/architecture.md §8.2 TMAG5273 desk-idle line (10 ms) | ✅ |
test_tmag_wake_interval_corners | TMAG5273 W&S average current at 500 ms | 1.55 µA | – … – | informational: firmware.md §4.8 DEEP-LOWBAT 'about 1.5 µA' | ✅ |
test_ldo_light_load_ground_current_sensitivity | RT9080 ground current with the 0-1 mA chord (KGND 0.056) | 3.52 µA | – … – | informational: DS9080-09 'Ground Current vs. Load Current' (58 µA at 1 mA) | ✅ |
test_resistor_tolerance_extremes | VSYS_SENSE divider current, worst tolerance corner (3.7 V) | 1.17 µA | – … 1.2 µA | docs/architecture.md §8.2 'VSYS_SENSE divider' line | ✅ |
test_resistor_tolerance_extremes | sleep total, tolerance spread (max - min) | 134 mµA | – … – | informational (32 corners) | ✅ |
test_ship_mode_drain[3.0] | ship-mode battery drain at VBAT 3.0 V (typ) | 6.2 µA | – … 6.2 µA | docs/architecture.md §8.2 'Ship mode ... ≈ 6.2 µA' (BQ25180 SLUSE99C IBAT_SHIP + PCM) | ✅ |
test_ship_mode_drain[3.0] | VSYS in ship mode at VBAT 3.0 V | -75 pV | – … 50 mV | BQ25180 SLUSE99C §8.3.4.1 Table 8-2: SYS pulled down in ship mode (main board unpowered) | ✅ |
test_ship_mode_drain[3.7] | ship-mode battery drain at VBAT 3.7 V (typ) | 6.2 µA | – … 6.2 µA | docs/architecture.md §8.2 'Ship mode ... ≈ 6.2 µA' (BQ25180 SLUSE99C IBAT_SHIP + PCM) | ✅ |
test_ship_mode_drain[3.7] | VSYS in ship mode at VBAT 3.7 V | -75 pV | – … 50 mV | BQ25180 SLUSE99C §8.3.4.1 Table 8-2: SYS pulled down in ship mode (main board unpowered) | ✅ |
test_ship_mode_drain[4.2] | ship-mode battery drain at VBAT 4.2 V (typ) | 6.2 µA | – … 6.2 µA | docs/architecture.md §8.2 'Ship mode ... ≈ 6.2 µA' (BQ25180 SLUSE99C IBAT_SHIP + PCM) | ✅ |
test_ship_mode_drain[4.2] | VSYS in ship mode at VBAT 4.2 V | -75 pV | – … 50 mV | BQ25180 SLUSE99C §8.3.4.1 Table 8-2: SYS pulled down in ship mode (main board unpowered) | ✅ |
test_ship_mode_max_vs_self_discharge | ship-mode drain, datasheet max (BQ25180 4.5 µA) | 7.5 µA | – … 27.4 µA | docs/architecture.md §8.1/§8.3: 2 %/month self-discharge of the 1000 mAh cell | ✅ |
test_desk_day_runtime_claim | desk typical-day runtime with simulated sleep current | 28.5 days | 28 days … – | docs/architecture.md §8.3 'Desk, typical day ... (28–29 days)' | ✅ |
test_desk_day_runtime_claim | sleep-only time to cutoff (mid self-discharge) | 1.43 years | – … – | informational: architecture §8.3 claims 'roughly 1.5 years' | ✅ |
test_wake_source_loads | extra battery current while the dial is held down in sleep | 69.6 µA | – … – | informational (R56 100 kΩ + base R3/R4 path) | ✅ |
test_wake_source_loads | BTN_N while held | 165 µV | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3 x VDD max | ✅ |
test_wake_inputs_idle_inactive[typ] | [typ] TMAG_INT_N (P0.27, SENSE low) idle level in sleep | 3.3 V | 2.31 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[typ] | [typ] CHG_INT_N (P1.03, SENSE low) idle level in sleep | 3.3 V | 2.31 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[typ] | [typ] BTN_N (P1.10, SENSE low) idle level in sleep | 3.3 V | 2.31 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[typ] | [typ] IMU_INT1 (P1.12, SENSE high) idle level in sleep | 0.0V | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3 x VDD max; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[max-leakage] | [max] TMAG_INT_N (P0.27, SENSE low) idle level in sleep | 3.29 V | 2.31 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[max-leakage] | [max] CHG_INT_N (P1.03, SENSE low) idle level in sleep | 3.29 V | 2.31 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[max-leakage] | [max] BTN_N (P1.10, SENSE low) idle level in sleep | 3.25 V | 2.31 V … – | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min; firmware.md §1.3 sleep config | ✅ |
test_wake_inputs_idle_inactive[max-leakage] | [max] IMU_INT1 (P1.12, SENSE high) idle level in sleep | 0.0V | – … 990 mV | nRF52840 PS v1.1 §6.9.3.1 VIL 0.3 x VDD max; firmware.md §1.3 sleep config | ✅ |
test_fault_vsys_sense_bottom_resistor_wrong_value | FAULT R2=100k: divider current exceeds the budget line (detected) | 1.61 µA | 1.2 µA … – | docs/architecture.md §8.2 'VSYS_SENSE divider' line | ✅ |
test_fault_vsys_sense_cap_shorted | FAULT C5 short: divider current exceeds the budget line (detected) | 1.68 µA | 1.2 µA … – | docs/architecture.md §8.2 'VSYS_SENSE divider' line | ✅ |
test_fault_oled_res_pulldown_100k | FAULT R20=100k: OLED sleep current (typ) exceeds the architecture typical OLED line (detected) | 47.1 µA | 17.6 µA … – | docs/architecture.md §8.2 OLED row, sleep column | ✅ |
test_fault_sw1_common_pair_swapped | FAULT SW1 always closed: ship-mode drain exceeds architecture §8.2 (detected) | 42.8 µA | 6.3 µA … – | docs/architecture.md §8.2 'Ship mode ... ≈ 6.2 µA' | ✅ |
test_fault_wake_pullup_left_off[R56-BTN_N] | FAULT R56 left off: BTN_N idles below VIH (detected) | 0.0V | – … 2.31 V | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min | ✅ |
test_fault_wake_pullup_left_off[R52-TMAG_INT_N] | FAULT R52 left off: TMAG_INT_N idles below VIH (detected) | 0.0V | – … 2.31 V | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min | ✅ |
test_fault_wake_pullup_left_off[R55-CHG_INT_N] | FAULT R55 left off: CHG_INT_N idles below VIH (detected) | 0.0V | – … 2.31 V | nRF52840 PS v1.1 §6.9.3.1 VIH 0.7 x VDD min | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (lo) VBR at IT 10 mA | 6.41 V | 6.4 V … 7 V | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (lo) VC at IPP 21.7 A | 7.05 V | – … 9.2 V | SMF5.0A DS (Littelfuse 06/07/17) VC 9.2 V max at IPP 21.7 A | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (lo) IR at VR 5.0 V | 396 µA | – … 400 µA | SMF5.0A DS (Littelfuse 06/07/17) IR 400 uA max at VR 5.0 V | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (typ) VBR at IT 10 mA | 6.7 V | 6.4 V … 7 V | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (typ) VC at IPP 21.7 A | 7.33 V | – … 9.2 V | SMF5.0A DS (Littelfuse 06/07/17) VC 9.2 V max at IPP 21.7 A | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (typ) IR at VR 5.0 V | 4.97 µA | – … 400 µA | SMF5.0A DS (Littelfuse 06/07/17) IR 400 uA max at VR 5.0 V | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (hi) VBR at IT 10 mA | 7 V | 6.4 V … 7 V | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (hi) VC at IPP 21.7 A | 9.2 V | – … 9.2 V | SMF5.0A DS (Littelfuse 06/07/17) VC 9.2 V max at IPP 21.7 A | ✅ |
test_tvs_model_matches_datasheet | SMF5.0A model (hi) IR at VR 5.0 V | 4.97 µA | – … 400 µA | SMF5.0A DS (Littelfuse 06/07/17) IR 400 uA max at VR 5.0 V | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (typ) VBR at 1 mA | 6.1 V | 6 V … – | USBLC6-2 DS 11265 Rev5 Table 2 VBR 6 V min at 1 mA | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (typ) IRM at 5.25 V | 14.5 pA | – … 150 nA | USBLC6-2 DS 11265 Rev5 Table 2 IRM 150 nA max at VRM 5.25 V | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (typ) VF at 10 mA | 934 mV | – … 1.1 V | USBLC6-2 DS 11265 Rev5 Table 2 VF 1.1 V max at 10 mA | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (typ) VCL at 1 A | 8.36 V | – … 12 V | USBLC6-2 DS 11265 Rev5 Table 2 VCL max (8/20 us, I/O to GND) | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (typ) VCL at 5 A | 12.5 V | – … 17 V | USBLC6-2 DS 11265 Rev5 Table 2 VCL max (8/20 us, I/O to GND) | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (max) VBR at 1 mA | 6.1 V | 6 V … – | USBLC6-2 DS 11265 Rev5 Table 2 VBR 6 V min at 1 mA | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (max) IRM at 5.25 V | 14.5 pA | – … 150 nA | USBLC6-2 DS 11265 Rev5 Table 2 IRM 150 nA max at VRM 5.25 V | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (max) VF at 10 mA | 939 mV | – … 1.1 V | USBLC6-2 DS 11265 Rev5 Table 2 VF 1.1 V max at 10 mA | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (max) VCL at 1 A | 9.27 V | – … 12 V | USBLC6-2 DS 11265 Rev5 Table 2 VCL max (8/20 us, I/O to GND) | ✅ |
test_usblc6_model_matches_datasheet | USBLC6 model (max) VCL at 5 A | 17 V | – … 17 V | USBLC6-2 DS 11265 Rev5 Table 2 VCL max (8/20 us, I/O to GND) | ✅ |
test_iec_gun_calibration | 8 kV contact waveform ip | 30 A | 25.5 A … 34.5 A | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_iec_gun_calibration | 8 kV contact waveform tr | 742 ps | 600 ps … 1 ns | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_iec_gun_calibration | 8 kV contact waveform i30 | 13.4 A | 11.2 A … 20.8 A | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_iec_gun_calibration | 8 kV contact waveform i60 | 7.25 A | 5.6 A … 10.4 A | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_cc_rd_windows[rp5v-default] | default/rp5v: min CC voltage (sink window, Table 4-36) | 332 mV | 250 mV … 610 mV | USB Type-C R2.0 Table 4-36 vRd-USB | ✅ |
test_cc_rd_windows[rp5v-default] | default/rp5v: max CC voltage (sink window, Table 4-36) | 567 mV | 250 mV … 610 mV | USB Type-C R2.0 Table 4-36 vRd-USB | ✅ |
test_cc_rd_windows[rp5v-default] | default/rp5v: max CC voltage (source detects Rd) | 567 mV | 250 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp5v-default] | default/rp5v: min CC voltage (source detects Rd) | 332 mV | 250 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp5v-1.5A] | 1.5A/rp5v: min CC voltage (sink window, Table 4-36) | 852 mV | 700 mV … 1.16 V | USB Type-C R2.0 Table 4-36 vRd-1.5 | ✅ |
test_cc_rd_windows[rp5v-1.5A] | 1.5A/rp5v: max CC voltage (sink window, Table 4-36) | 1.09 V | 700 mV … 1.16 V | USB Type-C R2.0 Table 4-36 vRd-1.5 | ✅ |
test_cc_rd_windows[rp5v-1.5A] | 1.5A/rp5v: max CC voltage (source detects Rd) | 1.09 V | 450 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp5v-1.5A] | 1.5A/rp5v: min CC voltage (source detects Rd) | 852 mV | 450 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp5v-3.0A] | 3.0A/rp5v: min CC voltage (sink window, Table 4-36) | 1.54 V | 1.31 V … 2.04 V | USB Type-C R2.0 Table 4-36 vRd-3.0 | ✅ |
test_cc_rd_windows[rp5v-3.0A] | 3.0A/rp5v: max CC voltage (sink window, Table 4-36) | 1.93 V | 1.31 V … 2.04 V | USB Type-C R2.0 Table 4-36 vRd-3.0 | ✅ |
test_cc_rd_windows[rp5v-3.0A] | 3.0A/rp5v: max CC voltage (source detects Rd) | 1.93 V | 850 mV … 2.45 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp5v-3.0A] | 3.0A/rp5v: min CC voltage (source detects Rd) | 1.54 V | 850 mV … 2.45 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp3v3-default] | default/rp3v3: min CC voltage (sink window, Table 4-36) | 328 mV | 250 mV … 610 mV | USB Type-C R2.0 Table 4-36 vRd-USB | ✅ |
test_cc_rd_windows[rp3v3-default] | default/rp3v3: max CC voltage (sink window, Table 4-36) | 526 mV | 250 mV … 610 mV | USB Type-C R2.0 Table 4-36 vRd-USB | ✅ |
test_cc_rd_windows[rp3v3-default] | default/rp3v3: max CC voltage (source detects Rd) | 526 mV | 250 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp3v3-default] | default/rp3v3: min CC voltage (source detects Rd) | 328 mV | 250 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp3v3-1.5A] | 1.5A/rp3v3: min CC voltage (sink window, Table 4-36) | 897 mV | 700 mV … 1.16 V | USB Type-C R2.0 Table 4-36 vRd-1.5 | ✅ |
test_cc_rd_windows[rp3v3-1.5A] | 1.5A/rp3v3: max CC voltage (sink window, Table 4-36) | 1.08 V | 700 mV … 1.16 V | USB Type-C R2.0 Table 4-36 vRd-1.5 | ✅ |
test_cc_rd_windows[rp3v3-1.5A] | 1.5A/rp3v3: max CC voltage (source detects Rd) | 1.08 V | 450 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp3v3-1.5A] | 1.5A/rp3v3: min CC voltage (source detects Rd) | 897 mV | 450 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp3v3-3.0A] | 3.0A/rp3v3: min CC voltage (sink window, Table 4-36) | 1.59 V | 1.31 V … 2.04 V | USB Type-C R2.0 Table 4-36 vRd-3.0 | ✅ |
test_cc_rd_windows[rp3v3-3.0A] | 3.0A/rp3v3: max CC voltage (sink window, Table 4-36) | 1.86 V | 1.31 V … 2.04 V | USB Type-C R2.0 Table 4-36 vRd-3.0 | ✅ |
test_cc_rd_windows[rp3v3-3.0A] | 3.0A/rp3v3: max CC voltage (source detects Rd) | 1.86 V | 850 mV … 2.45 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[rp3v3-3.0A] | 3.0A/rp3v3: min CC voltage (source detects Rd) | 1.59 V | 850 mV … 2.45 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[isrc-default] | default/isrc: min CC voltage (sink window, Table 4-36) | 323 mV | 250 mV … 610 mV | USB Type-C R2.0 Table 4-36 vRd-USB | ✅ |
test_cc_rd_windows[isrc-default] | default/isrc: max CC voltage (sink window, Table 4-36) | 494 mV | 250 mV … 610 mV | USB Type-C R2.0 Table 4-36 vRd-USB | ✅ |
test_cc_rd_windows[isrc-default] | default/isrc: max CC voltage (source detects Rd) | 494 mV | 250 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[isrc-default] | default/isrc: min CC voltage (source detects Rd) | 323 mV | 250 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[isrc-1.5A] | 1.5A/isrc: min CC voltage (sink window, Table 4-36) | 836 mV | 700 mV … 1.16 V | USB Type-C R2.0 Table 4-36 vRd-1.5 | ✅ |
test_cc_rd_windows[isrc-1.5A] | 1.5A/isrc: max CC voltage (sink window, Table 4-36) | 1 V | 700 mV … 1.16 V | USB Type-C R2.0 Table 4-36 vRd-1.5 | ✅ |
test_cc_rd_windows[isrc-1.5A] | 1.5A/isrc: max CC voltage (source detects Rd) | 1 V | 450 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[isrc-1.5A] | 1.5A/isrc: min CC voltage (source detects Rd) | 836 mV | 450 mV … 1.5 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[isrc-3.0A] | 3.0A/isrc: min CC voltage (sink window, Table 4-36) | 1.53 V | 1.31 V … 2.04 V | USB Type-C R2.0 Table 4-36 vRd-3.0 | ✅ |
test_cc_rd_windows[isrc-3.0A] | 3.0A/isrc: max CC voltage (sink window, Table 4-36) | 1.84 V | 1.31 V … 2.04 V | USB Type-C R2.0 Table 4-36 vRd-3.0 | ✅ |
test_cc_rd_windows[isrc-3.0A] | 3.0A/isrc: max CC voltage (source detects Rd) | 1.84 V | 850 mV … 2.45 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_windows[isrc-3.0A] | 3.0A/isrc: min CC voltage (source detects Rd) | 1.53 V | 850 mV … 2.45 V | USB Type-C R2.0 Tables 4-32/33/34 Sink (vRd) | ✅ |
test_cc_rd_value | R1 on USB_CC1 (tolerance extreme) | 5.05 kOhm | 4.59 kOhm … 5.61 kOhm | USB Type-C R2.0 Table 4-25 Rd 5.1 k +-10 % (power-capability detect) | ✅ |
test_cc_rd_value | R1 on USB_CC1 (tolerance extreme) | 5.15 kOhm | 4.59 kOhm … 5.61 kOhm | USB Type-C R2.0 Table 4-25 Rd 5.1 k +-10 % (power-capability detect) | ✅ |
test_cc_rd_value | R2 on USB_CC2 (tolerance extreme) | 5.05 kOhm | 4.59 kOhm … 5.61 kOhm | USB Type-C R2.0 Table 4-25 Rd 5.1 k +-10 % (power-capability detect) | ✅ |
test_cc_rd_value | R2 on USB_CC2 (tolerance extreme) | 5.15 kOhm | 4.59 kOhm … 5.61 kOhm | USB Type-C R2.0 Table 4-25 Rd 5.1 k +-10 % (power-capability detect) | ✅ |
test_vbus_capacitance_typec_limit | sink VBUS capacitance, unattached (C1 + C12 + TVS CJ, +tol, +15 % temp) | 8.54 µF | – … 10 µF | USB Type-C R2.0 Table 4-3 sink VBUS capacitance 10 uF max (not attached) | ✅ |
test_vbus_capacitance_typec_limit | BQ25180 IN capacitance, 0 V, +tol, +15 % temp | 2.78 µF | – … 10 µF | BQ25180 DS SLUSE99C 9.2.2.1 + Table 9-2 CIN 1 uF (after derating) .. 10 uF | ✅ |
test_cin_after_dc_bias_25c[5.0] | CIN effective at 5.0 V, -tol, 25 C | 1.58 µF | 1 µF … 10 µF | BQ25180 DS SLUSE99C 9.2.2.1 + Table 9-2 CIN 1 uF (after derating) .. 10 uF | ✅ |
test_cin_after_dc_bias_25c[5.5] | CIN effective at 5.5 V, -tol, 25 C | 1.52 µF | 1 µF … 10 µF | BQ25180 DS SLUSE99C 9.2.2.1 + Table 9-2 CIN 1 uF (after derating) .. 10 uF | ✅ |
test_cin_after_dc_bias_temperature[-10] | CIN effective at 5.5 V, -tol, -10 C (X5R -15 %) | 1.29 µF | 1 µF … 10 µF | BQ25180 DS SLUSE99C 9.2.2.1 + Table 9-2 CIN 1 uF (after derating) .. 10 uF | ✅ |
test_cin_after_dc_bias_temperature[60] | CIN effective at 5.5 V, -tol, 60 C (X5R -15 %) | 1.29 µF | 1 µF … 10 µF | BQ25180 DS SLUSE99C 9.2.2.1 + Table 9-2 CIN 1 uF (after derating) .. 10 uF | ✅ |
test_dc_operating_point[0.0-4.5] | IN at VBUS 4.5 V, IIN 0.0 A | 4.5 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[0.0-4.5] | IN below OVP at VBUS 4.5 V, IIN 0.0 A | 4.5 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[0.0-4.5] | nRF VBUS at VBUS 4.5 V, IIN 0.0 A | 4.49 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[0.0-4.5] | (info) USBLC6 VBUS pin at VBUS 4.5 V (VRM 5.25 V) | 4.5 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[0.0-5.0] | IN at VBUS 5.0 V, IIN 0.0 A | 5 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[0.0-5.0] | IN below OVP at VBUS 5.0 V, IIN 0.0 A | 5 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[0.0-5.0] | nRF VBUS at VBUS 5.0 V, IIN 0.0 A | 4.99 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[0.0-5.0] | (info) USBLC6 VBUS pin at VBUS 5.0 V (VRM 5.25 V) | 5 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[0.0-5.5] | IN at VBUS 5.5 V, IIN 0.0 A | 5.5 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[0.0-5.5] | IN below OVP at VBUS 5.5 V, IIN 0.0 A | 5.5 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[0.0-5.5] | nRF VBUS at VBUS 5.5 V, IIN 0.0 A | 5.49 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[0.0-5.5] | (info) USBLC6 VBUS pin at VBUS 5.5 V (VRM 5.25 V) | 5.5 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[0.498-4.5] | IN at VBUS 4.5 V, IIN 0.498 A | 4.42 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[0.498-4.5] | IN below OVP at VBUS 4.5 V, IIN 0.498 A | 4.42 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[0.498-4.5] | nRF VBUS at VBUS 4.5 V, IIN 0.498 A | 4.44 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[0.498-4.5] | (info) USBLC6 VBUS pin at VBUS 4.5 V (VRM 5.25 V) | 4.45 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[0.498-5.0] | IN at VBUS 5.0 V, IIN 0.498 A | 4.92 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[0.498-5.0] | IN below OVP at VBUS 5.0 V, IIN 0.498 A | 4.92 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[0.498-5.0] | nRF VBUS at VBUS 5.0 V, IIN 0.498 A | 4.94 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[0.498-5.0] | (info) USBLC6 VBUS pin at VBUS 5.0 V (VRM 5.25 V) | 4.95 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[0.498-5.5] | IN at VBUS 5.5 V, IIN 0.498 A | 5.42 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[0.498-5.5] | IN below OVP at VBUS 5.5 V, IIN 0.498 A | 5.42 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[0.498-5.5] | nRF VBUS at VBUS 5.5 V, IIN 0.498 A | 5.44 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[0.498-5.5] | (info) USBLC6 VBUS pin at VBUS 5.5 V (VRM 5.25 V) | 5.45 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[1.1-4.5] | IN at VBUS 4.5 V, IIN 1.1 A | 4.32 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[1.1-4.5] | IN below OVP at VBUS 4.5 V, IIN 1.1 A | 4.32 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[1.1-4.5] | nRF VBUS at VBUS 4.5 V, IIN 1.1 A | 4.38 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[1.1-4.5] | (info) USBLC6 VBUS pin at VBUS 4.5 V (VRM 5.25 V) | 4.39 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[1.1-5.0] | IN at VBUS 5.0 V, IIN 1.1 A | 4.82 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[1.1-5.0] | IN below OVP at VBUS 5.0 V, IIN 1.1 A | 4.82 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[1.1-5.0] | nRF VBUS at VBUS 5.0 V, IIN 1.1 A | 4.88 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[1.1-5.0] | (info) USBLC6 VBUS pin at VBUS 5.0 V (VRM 5.25 V) | 4.89 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_dc_operating_point[1.1-5.5] | IN at VBUS 5.5 V, IIN 1.1 A | 5.32 V | 3 V … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OP 3.0-5.5 V | ✅ |
test_dc_operating_point[1.1-5.5] | IN below OVP at VBUS 5.5 V, IIN 1.1 A | 5.32 V | – … 5.5 V | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_dc_operating_point[1.1-5.5] | nRF VBUS at VBUS 5.5 V, IIN 1.1 A | 5.38 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_dc_operating_point[1.1-5.5] | (info) USBLC6 VBUS pin at VBUS 5.5 V (VRM 5.25 V) | 5.39 V | – … – | USBLC6-2 DS 11265 Rev5 Table 2 VRM 5.25 V (test condition of IRM, not an abs max) | ✅ |
test_tvs_not_in_breakdown_at_usb_max | D1 current at VBUS 5.5 V (VBR min, IR max corner) | 951 µA | – … 10 mA | SMF5.0A DS (Littelfuse 06/07/17) VBR test current IT 10 mA (VBR min 6.40 V) | ✅ |
test_data_line_dc_levels[J-4.35] | high line at J1 (J state, VBUS 4.35 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[J-4.35] | low line at J1 (J state, VBUS 4.35 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[J-4.35] | high line at the nRF pad (J state, VBUS 4.35 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[J-4.35] | low line at the nRF pad (J state, VBUS 4.35 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[J-5.5] | high line at J1 (J state, VBUS 5.5 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[J-5.5] | low line at J1 (J state, VBUS 5.5 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[J-5.5] | high line at the nRF pad (J state, VBUS 5.5 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[J-5.5] | low line at the nRF pad (J state, VBUS 5.5 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[K-4.35] | high line at J1 (K state, VBUS 4.35 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[K-4.35] | low line at J1 (K state, VBUS 4.35 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[K-4.35] | high line at the nRF pad (K state, VBUS 4.35 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[K-4.35] | low line at the nRF pad (K state, VBUS 4.35 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[K-5.5] | high line at J1 (K state, VBUS 5.5 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[K-5.5] | low line at J1 (K state, VBUS 5.5 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_data_line_dc_levels[K-5.5] | high line at the nRF pad (K state, VBUS 5.5 V) | 2.99 V | 2.8 V … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_data_line_dc_levels[K-5.5] | low line at the nRF pad (K state, VBUS 5.5 V) | 103 mV | – … 300 mV | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_usb_suspend_current[5.25] | (info) D1 leakage at VBUS 5.25 V (leakage-max corner) | 616 µA | – … – | SMF5.0A DS (Littelfuse 06/07/17) IR 400 uA max at VR 5.0 V | ✅ |
test_usb_suspend_current[5.25] | VBUS current in USB suspend at 5.25 V (charger idle, D1 leakage max) | 2.11 mA | – … 2.5 mA | USB 2.0 Spec Rev 2.0 Table 7-7 ICCSH 2.5 mA (7.2.3: high-power device enabled for remote wakeup; any other device 500 uA) | ✅ |
test_usb_suspend_current[5.5] | (info) D1 leakage at VBUS 5.5 V (leakage-max corner) | 951 µA | – … – | SMF5.0A DS (Littelfuse 06/07/17) IR 400 uA max at VR 5.0 V | ✅ |
test_usb_suspend_current[5.5] | VBUS current in USB suspend at 5.5 V (charger idle, D1 leakage max) | 2.44 mA | – … 2.5 mA | USB 2.0 Spec Rev 2.0 Table 7-7 ICCSH 2.5 mA (7.2.3: high-power device enabled for remote wakeup; any other device 500 uA) | ✅ |
test_netlist_coverage | parts on the simulated nets that the decks do not model [] | 0 | – … 0 | test integrity: base VBUS/D+/D-/CC and main VBUS/D+/D- nets fully modelled | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | (info) D1 in breakdown (4.5 V, 1m_0.5uH_100m, 10 uF): peak at D1 >= VBR min | 6.65 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | IN peak (4.5 V, 1m_0.5uH_100m, 10 uF) | 6.78 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | D1 peak current (4.5 V, 1m_0.5uH_100m, 10 uF) | 32.7 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | U2 VBUS clamp peak current (4.5 V, 1m_0.5uH_100m, 10 uF) | 742 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | (info) U2 VBUS pin peak (4.5 V, 1m_0.5uH_100m, 10 uF) | 6.64 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | (info) IN peak vs VIN_OVP min (4.5 V, 1m_0.5uH_100m, 10 uF): charger input FET trips | 6.78 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | (info) nRF VBUS peak (4.5 V, 1m_0.5uH_100m, 10 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-10uF] | (info) IN at the end of the run, ringing tail (4.5 V, 1m_0.5uH_100m, 10 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | (info) D1 in breakdown (4.5 V, 1m_0.5uH_100m, 120 uF): peak at D1 < VBR min | 5.72 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | IN peak (4.5 V, 1m_0.5uH_100m, 120 uF) | 5.81 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | D1 peak current (4.5 V, 1m_0.5uH_100m, 120 uF) | 24.8 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | U2 VBUS clamp peak current (4.5 V, 1m_0.5uH_100m, 120 uF) | 330 pA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | (info) U2 VBUS pin peak (4.5 V, 1m_0.5uH_100m, 120 uF) | 5.72 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | (info) IN peak vs VIN_OVP min (4.5 V, 1m_0.5uH_100m, 120 uF): charger input FET trips | 5.81 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | (info) nRF VBUS peak (4.5 V, 1m_0.5uH_100m, 120 uF) | 4.48 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-1m_0.5uH_100m-120uF] | (info) IN at the end of the run, ringing tail (4.5 V, 1m_0.5uH_100m, 120 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | (info) D1 in breakdown (4.5 V, 2m_1uH_100m, 10 uF): peak at D1 >= VBR min | 6.75 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | IN peak (4.5 V, 2m_1uH_100m, 10 uF) | 6.79 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | D1 peak current (4.5 V, 2m_1uH_100m, 10 uF) | 66.7 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | U2 VBUS clamp peak current (4.5 V, 2m_1uH_100m, 10 uF) | 927 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | (info) U2 VBUS pin peak (4.5 V, 2m_1uH_100m, 10 uF) | 6.74 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | (info) IN peak vs VIN_OVP min (4.5 V, 2m_1uH_100m, 10 uF): charger input FET trips | 6.79 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | (info) nRF VBUS peak (4.5 V, 2m_1uH_100m, 10 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-10uF] | (info) IN at the end of the run, ringing tail (4.5 V, 2m_1uH_100m, 10 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | (info) D1 in breakdown (4.5 V, 2m_1uH_100m, 120 uF): peak at D1 < VBR min | 6.4 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | IN peak (4.5 V, 2m_1uH_100m, 120 uF) | 6.42 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | D1 peak current (4.5 V, 2m_1uH_100m, 120 uF) | 6.37 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | U2 VBUS clamp peak current (4.5 V, 2m_1uH_100m, 120 uF) | 293 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | (info) U2 VBUS pin peak (4.5 V, 2m_1uH_100m, 120 uF) | 6.39 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | (info) IN peak vs VIN_OVP min (4.5 V, 2m_1uH_100m, 120 uF): charger input FET trips | 6.42 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | (info) nRF VBUS peak (4.5 V, 2m_1uH_100m, 120 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_100m-120uF] | (info) IN at the end of the run, ringing tail (4.5 V, 2m_1uH_100m, 120 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | (info) D1 in breakdown (4.5 V, 1m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.84 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | IN peak (4.5 V, 1m_1uH_50m, 10 uF) | 6.97 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | D1 peak current (4.5 V, 1m_1uH_50m, 10 uF) | 951 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | U2 VBUS clamp peak current (4.5 V, 1m_1uH_50m, 10 uF) | 1.1 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | (info) U2 VBUS pin peak (4.5 V, 1m_1uH_50m, 10 uF) | 6.83 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (4.5 V, 1m_1uH_50m, 10 uF): charger input FET trips | 6.97 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | (info) nRF VBUS peak (4.5 V, 1m_1uH_50m, 10 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (4.5 V, 1m_1uH_50m, 10 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | (info) D1 in breakdown (4.5 V, 1m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.42 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | IN peak (4.5 V, 1m_1uH_50m, 120 uF) | 6.49 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | D1 peak current (4.5 V, 1m_1uH_50m, 120 uF) | 12.7 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | U2 VBUS clamp peak current (4.5 V, 1m_1uH_50m, 120 uF) | 340 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | (info) U2 VBUS pin peak (4.5 V, 1m_1uH_50m, 120 uF) | 6.42 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (4.5 V, 1m_1uH_50m, 120 uF): charger input FET trips | 6.49 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | (info) nRF VBUS peak (4.5 V, 1m_1uH_50m, 120 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-1m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (4.5 V, 1m_1uH_50m, 120 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | (info) D1 in breakdown (4.5 V, 2m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.81 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | IN peak (4.5 V, 2m_1uH_50m, 10 uF) | 6.87 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | D1 peak current (4.5 V, 2m_1uH_50m, 10 uF) | 469 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | U2 VBUS clamp peak current (4.5 V, 2m_1uH_50m, 10 uF) | 1.04 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | (info) U2 VBUS pin peak (4.5 V, 2m_1uH_50m, 10 uF) | 6.8 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (4.5 V, 2m_1uH_50m, 10 uF): charger input FET trips | 6.87 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | (info) nRF VBUS peak (4.5 V, 2m_1uH_50m, 10 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (4.5 V, 2m_1uH_50m, 10 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | (info) D1 in breakdown (4.5 V, 2m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.54 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | IN peak (4.5 V, 2m_1uH_50m, 120 uF) | 6.57 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | D1 peak current (4.5 V, 2m_1uH_50m, 120 uF) | 6.37 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | U2 VBUS clamp peak current (4.5 V, 2m_1uH_50m, 120 uF) | 535 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | (info) U2 VBUS pin peak (4.5 V, 2m_1uH_50m, 120 uF) | 6.53 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (4.5 V, 2m_1uH_50m, 120 uF): charger input FET trips | 6.57 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | (info) nRF VBUS peak (4.5 V, 2m_1uH_50m, 120 uF) | 4.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[4.5V-2m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (4.5 V, 2m_1uH_50m, 120 uF) | 4.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | (info) D1 in breakdown (5.0 V, 1m_0.5uH_100m, 10 uF): peak at D1 >= VBR min | 6.87 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | IN peak (5.0 V, 1m_0.5uH_100m, 10 uF) | 7.14 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | D1 peak current (5.0 V, 1m_0.5uH_100m, 10 uF) | 1.81 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | U2 VBUS clamp peak current (5.0 V, 1m_0.5uH_100m, 10 uF) | 1.18 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | (info) U2 VBUS pin peak (5.0 V, 1m_0.5uH_100m, 10 uF) | 6.87 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | (info) IN peak vs VIN_OVP min (5.0 V, 1m_0.5uH_100m, 10 uF): charger input FET trips | 7.14 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | (info) nRF VBUS peak (5.0 V, 1m_0.5uH_100m, 10 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-10uF] | (info) IN at the end of the run, ringing tail (5.0 V, 1m_0.5uH_100m, 10 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | (info) D1 in breakdown (5.0 V, 1m_0.5uH_100m, 120 uF): peak at D1 < VBR min | 6.36 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | IN peak (5.0 V, 1m_0.5uH_100m, 120 uF) | 6.47 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | D1 peak current (5.0 V, 1m_0.5uH_100m, 120 uF) | 27.5 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | U2 VBUS clamp peak current (5.0 V, 1m_0.5uH_100m, 120 uF) | 236 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | (info) U2 VBUS pin peak (5.0 V, 1m_0.5uH_100m, 120 uF) | 6.36 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | (info) IN peak vs VIN_OVP min (5.0 V, 1m_0.5uH_100m, 120 uF): charger input FET trips | 6.47 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | (info) nRF VBUS peak (5.0 V, 1m_0.5uH_100m, 120 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-1m_0.5uH_100m-120uF] | (info) IN at the end of the run, ringing tail (5.0 V, 1m_0.5uH_100m, 120 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | (info) D1 in breakdown (5.0 V, 2m_1uH_100m, 10 uF): peak at D1 >= VBR min | 6.85 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | IN peak (5.0 V, 2m_1uH_100m, 10 uF) | 6.95 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | D1 peak current (5.0 V, 2m_1uH_100m, 10 uF) | 1.25 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | U2 VBUS clamp peak current (5.0 V, 2m_1uH_100m, 10 uF) | 1.13 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | (info) U2 VBUS pin peak (5.0 V, 2m_1uH_100m, 10 uF) | 6.85 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | (info) IN peak vs VIN_OVP min (5.0 V, 2m_1uH_100m, 10 uF): charger input FET trips | 6.95 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | (info) nRF VBUS peak (5.0 V, 2m_1uH_100m, 10 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-10uF] | (info) IN at the end of the run, ringing tail (5.0 V, 2m_1uH_100m, 10 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | (info) D1 in breakdown (5.0 V, 2m_1uH_100m, 120 uF): peak at D1 >= VBR min | 6.74 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | IN peak (5.0 V, 2m_1uH_100m, 120 uF) | 6.77 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | D1 peak current (5.0 V, 2m_1uH_100m, 120 uF) | 50.2 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | U2 VBUS clamp peak current (5.0 V, 2m_1uH_100m, 120 uF) | 912 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | (info) U2 VBUS pin peak (5.0 V, 2m_1uH_100m, 120 uF) | 6.73 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | (info) IN peak vs VIN_OVP min (5.0 V, 2m_1uH_100m, 120 uF): charger input FET trips | 6.77 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | (info) nRF VBUS peak (5.0 V, 2m_1uH_100m, 120 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_100m-120uF] | (info) IN at the end of the run, ringing tail (5.0 V, 2m_1uH_100m, 120 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | (info) D1 in breakdown (5.0 V, 1m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.9 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | IN peak (5.0 V, 1m_1uH_50m, 10 uF) | 7.14 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | D1 peak current (5.0 V, 1m_1uH_50m, 10 uF) | 2.76 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | U2 VBUS clamp peak current (5.0 V, 1m_1uH_50m, 10 uF) | 1.25 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | (info) U2 VBUS pin peak (5.0 V, 1m_1uH_50m, 10 uF) | 6.91 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (5.0 V, 1m_1uH_50m, 10 uF): charger input FET trips | 7.14 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | (info) nRF VBUS peak (5.0 V, 1m_1uH_50m, 10 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (5.0 V, 1m_1uH_50m, 10 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | (info) D1 in breakdown (5.0 V, 1m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.8 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | IN peak (5.0 V, 1m_1uH_50m, 120 uF) | 6.88 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | D1 peak current (5.0 V, 1m_1uH_50m, 120 uF) | 340 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | U2 VBUS clamp peak current (5.0 V, 1m_1uH_50m, 120 uF) | 1.02 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | (info) U2 VBUS pin peak (5.0 V, 1m_1uH_50m, 120 uF) | 6.79 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (5.0 V, 1m_1uH_50m, 120 uF): charger input FET trips | 6.88 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | (info) nRF VBUS peak (5.0 V, 1m_1uH_50m, 120 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-1m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (5.0 V, 1m_1uH_50m, 120 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | (info) D1 in breakdown (5.0 V, 2m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.87 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | IN peak (5.0 V, 2m_1uH_50m, 10 uF) | 7 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | D1 peak current (5.0 V, 2m_1uH_50m, 10 uF) | 1.73 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | U2 VBUS clamp peak current (5.0 V, 2m_1uH_50m, 10 uF) | 1.17 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | (info) U2 VBUS pin peak (5.0 V, 2m_1uH_50m, 10 uF) | 6.87 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (5.0 V, 2m_1uH_50m, 10 uF): charger input FET trips | 7 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | (info) nRF VBUS peak (5.0 V, 2m_1uH_50m, 10 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (5.0 V, 2m_1uH_50m, 10 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | (info) D1 in breakdown (5.0 V, 2m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.8 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | IN peak (5.0 V, 2m_1uH_50m, 120 uF) | 6.85 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | D1 peak current (5.0 V, 2m_1uH_50m, 120 uF) | 404 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | U2 VBUS clamp peak current (5.0 V, 2m_1uH_50m, 120 uF) | 1.03 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | (info) U2 VBUS pin peak (5.0 V, 2m_1uH_50m, 120 uF) | 6.79 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (5.0 V, 2m_1uH_50m, 120 uF): charger input FET trips | 6.85 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | (info) nRF VBUS peak (5.0 V, 2m_1uH_50m, 120 uF) | 4.99 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.0V-2m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (5.0 V, 2m_1uH_50m, 120 uF) | 5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | (info) D1 in breakdown (5.25 V, 1m_0.5uH_100m, 10 uF): peak at D1 >= VBR min | 6.91 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | IN peak (5.25 V, 1m_0.5uH_100m, 10 uF) | 7.25 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | D1 peak current (5.25 V, 1m_0.5uH_100m, 10 uF) | 2.96 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | U2 VBUS clamp peak current (5.25 V, 1m_0.5uH_100m, 10 uF) | 1.27 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | (info) U2 VBUS pin peak (5.25 V, 1m_0.5uH_100m, 10 uF) | 6.92 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | (info) IN peak vs VIN_OVP min (5.25 V, 1m_0.5uH_100m, 10 uF): charger input FET trips | 7.25 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | (info) nRF VBUS peak (5.25 V, 1m_0.5uH_100m, 10 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-10uF] | (info) IN at the end of the run, ringing tail (5.25 V, 1m_0.5uH_100m, 10 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | (info) D1 in breakdown (5.25 V, 1m_0.5uH_100m, 120 uF): peak at D1 >= VBR min | 6.6 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | IN peak (5.25 V, 1m_0.5uH_100m, 120 uF) | 6.71 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | D1 peak current (5.25 V, 1m_0.5uH_100m, 120 uF) | 28.8 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | U2 VBUS clamp peak current (5.25 V, 1m_0.5uH_100m, 120 uF) | 647 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | (info) U2 VBUS pin peak (5.25 V, 1m_0.5uH_100m, 120 uF) | 6.59 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | (info) IN peak vs VIN_OVP min (5.25 V, 1m_0.5uH_100m, 120 uF): charger input FET trips | 6.71 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | (info) nRF VBUS peak (5.25 V, 1m_0.5uH_100m, 120 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-1m_0.5uH_100m-120uF] | (info) IN at the end of the run, ringing tail (5.25 V, 1m_0.5uH_100m, 120 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | (info) D1 in breakdown (5.25 V, 2m_1uH_100m, 10 uF): peak at D1 >= VBR min | 6.87 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | IN peak (5.25 V, 2m_1uH_100m, 10 uF) | 7.01 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | D1 peak current (5.25 V, 2m_1uH_100m, 10 uF) | 1.81 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | U2 VBUS clamp peak current (5.25 V, 2m_1uH_100m, 10 uF) | 1.18 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | (info) U2 VBUS pin peak (5.25 V, 2m_1uH_100m, 10 uF) | 6.87 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | (info) IN peak vs VIN_OVP min (5.25 V, 2m_1uH_100m, 10 uF): charger input FET trips | 7.01 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | (info) nRF VBUS peak (5.25 V, 2m_1uH_100m, 10 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-10uF] | (info) IN at the end of the run, ringing tail (5.25 V, 2m_1uH_100m, 10 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | (info) D1 in breakdown (5.25 V, 2m_1uH_100m, 120 uF): peak at D1 >= VBR min | 6.81 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | IN peak (5.25 V, 2m_1uH_100m, 120 uF) | 6.87 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | D1 peak current (5.25 V, 2m_1uH_100m, 120 uF) | 505 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | U2 VBUS clamp peak current (5.25 V, 2m_1uH_100m, 120 uF) | 1.05 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | (info) U2 VBUS pin peak (5.25 V, 2m_1uH_100m, 120 uF) | 6.8 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | (info) IN peak vs VIN_OVP min (5.25 V, 2m_1uH_100m, 120 uF): charger input FET trips | 6.87 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | (info) nRF VBUS peak (5.25 V, 2m_1uH_100m, 120 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_100m-120uF] | (info) IN at the end of the run, ringing tail (5.25 V, 2m_1uH_100m, 120 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | (info) D1 in breakdown (5.25 V, 1m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.92 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | IN peak (5.25 V, 1m_1uH_50m, 10 uF) | 7.21 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | D1 peak current (5.25 V, 1m_1uH_50m, 10 uF) | 3.54 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | U2 VBUS clamp peak current (5.25 V, 1m_1uH_50m, 10 uF) | 1.31 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | (info) U2 VBUS pin peak (5.25 V, 1m_1uH_50m, 10 uF) | 6.94 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (5.25 V, 1m_1uH_50m, 10 uF): charger input FET trips | 7.21 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | (info) nRF VBUS peak (5.25 V, 1m_1uH_50m, 10 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (5.25 V, 1m_1uH_50m, 10 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | (info) D1 in breakdown (5.25 V, 1m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.85 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | IN peak (5.25 V, 1m_1uH_50m, 120 uF) | 6.98 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | D1 peak current (5.25 V, 1m_1uH_50m, 120 uF) | 1.16 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | U2 VBUS clamp peak current (5.25 V, 1m_1uH_50m, 120 uF) | 1.12 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | (info) U2 VBUS pin peak (5.25 V, 1m_1uH_50m, 120 uF) | 6.84 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (5.25 V, 1m_1uH_50m, 120 uF): charger input FET trips | 6.98 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | (info) nRF VBUS peak (5.25 V, 1m_1uH_50m, 120 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-1m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (5.25 V, 1m_1uH_50m, 120 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | (info) D1 in breakdown (5.25 V, 2m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.88 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | IN peak (5.25 V, 2m_1uH_50m, 10 uF) | 7.05 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | D1 peak current (5.25 V, 2m_1uH_50m, 10 uF) | 2.27 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | U2 VBUS clamp peak current (5.25 V, 2m_1uH_50m, 10 uF) | 1.22 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | (info) U2 VBUS pin peak (5.25 V, 2m_1uH_50m, 10 uF) | 6.89 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (5.25 V, 2m_1uH_50m, 10 uF): charger input FET trips | 7.05 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | (info) nRF VBUS peak (5.25 V, 2m_1uH_50m, 10 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (5.25 V, 2m_1uH_50m, 10 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | (info) D1 in breakdown (5.25 V, 2m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.84 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | IN peak (5.25 V, 2m_1uH_50m, 120 uF) | 6.92 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | D1 peak current (5.25 V, 2m_1uH_50m, 120 uF) | 969 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | U2 VBUS clamp peak current (5.25 V, 2m_1uH_50m, 120 uF) | 1.1 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | (info) U2 VBUS pin peak (5.25 V, 2m_1uH_50m, 120 uF) | 6.83 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (5.25 V, 2m_1uH_50m, 120 uF): charger input FET trips | 6.92 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | (info) nRF VBUS peak (5.25 V, 2m_1uH_50m, 120 uF) | 5.24 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.25V-2m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (5.25 V, 2m_1uH_50m, 120 uF) | 5.25 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | (info) D1 in breakdown (5.5 V, 1m_0.5uH_100m, 10 uF): peak at D1 >= VBR min | 6.93 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | IN peak (5.5 V, 1m_0.5uH_100m, 10 uF) | 7.34 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | D1 peak current (5.5 V, 1m_0.5uH_100m, 10 uF) | 4.03 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | U2 VBUS clamp peak current (5.5 V, 1m_0.5uH_100m, 10 uF) | 1.35 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | (info) U2 VBUS pin peak (5.5 V, 1m_0.5uH_100m, 10 uF) | 6.96 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | (info) IN peak vs VIN_OVP min (5.5 V, 1m_0.5uH_100m, 10 uF): charger input FET trips | 7.34 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | (info) nRF VBUS peak (5.5 V, 1m_0.5uH_100m, 10 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-10uF] | (info) IN at the end of the run, ringing tail (5.5 V, 1m_0.5uH_100m, 10 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | (info) D1 in breakdown (5.5 V, 1m_0.5uH_100m, 120 uF): peak at D1 >= VBR min | 6.78 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | IN peak (5.5 V, 1m_0.5uH_100m, 120 uF) | 6.92 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | D1 peak current (5.5 V, 1m_0.5uH_100m, 120 uF) | 206 mA | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | U2 VBUS clamp peak current (5.5 V, 1m_0.5uH_100m, 120 uF) | 988 mA | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | (info) U2 VBUS pin peak (5.5 V, 1m_0.5uH_100m, 120 uF) | 6.77 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | (info) IN peak vs VIN_OVP min (5.5 V, 1m_0.5uH_100m, 120 uF): charger input FET trips | 6.92 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | (info) nRF VBUS peak (5.5 V, 1m_0.5uH_100m, 120 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-1m_0.5uH_100m-120uF] | (info) IN at the end of the run, ringing tail (5.5 V, 1m_0.5uH_100m, 120 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | (info) D1 in breakdown (5.5 V, 2m_1uH_100m, 10 uF): peak at D1 >= VBR min | 6.89 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | IN peak (5.5 V, 2m_1uH_100m, 10 uF) | 7.05 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | D1 peak current (5.5 V, 2m_1uH_100m, 10 uF) | 2.33 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | U2 VBUS clamp peak current (5.5 V, 2m_1uH_100m, 10 uF) | 1.22 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | (info) U2 VBUS pin peak (5.5 V, 2m_1uH_100m, 10 uF) | 6.89 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | (info) IN peak vs VIN_OVP min (5.5 V, 2m_1uH_100m, 10 uF): charger input FET trips | 7.05 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | (info) nRF VBUS peak (5.5 V, 2m_1uH_100m, 10 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-10uF] | (info) IN at the end of the run, ringing tail (5.5 V, 2m_1uH_100m, 10 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | (info) D1 in breakdown (5.5 V, 2m_1uH_100m, 120 uF): peak at D1 >= VBR min | 6.84 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | IN peak (5.5 V, 2m_1uH_100m, 120 uF) | 6.93 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | D1 peak current (5.5 V, 2m_1uH_100m, 120 uF) | 1.04 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | U2 VBUS clamp peak current (5.5 V, 2m_1uH_100m, 120 uF) | 1.11 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | (info) U2 VBUS pin peak (5.5 V, 2m_1uH_100m, 120 uF) | 6.84 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | (info) IN peak vs VIN_OVP min (5.5 V, 2m_1uH_100m, 120 uF): charger input FET trips | 6.93 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | (info) nRF VBUS peak (5.5 V, 2m_1uH_100m, 120 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_100m-120uF] | (info) IN at the end of the run, ringing tail (5.5 V, 2m_1uH_100m, 120 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | (info) D1 in breakdown (5.5 V, 1m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.94 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | IN peak (5.5 V, 1m_1uH_50m, 10 uF) | 7.27 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | D1 peak current (5.5 V, 1m_1uH_50m, 10 uF) | 4.27 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | U2 VBUS clamp peak current (5.5 V, 1m_1uH_50m, 10 uF) | 1.36 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | (info) U2 VBUS pin peak (5.5 V, 1m_1uH_50m, 10 uF) | 6.96 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (5.5 V, 1m_1uH_50m, 10 uF): charger input FET trips | 7.27 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | (info) nRF VBUS peak (5.5 V, 1m_1uH_50m, 10 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (5.5 V, 1m_1uH_50m, 10 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | (info) D1 in breakdown (5.5 V, 1m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.87 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | IN peak (5.5 V, 1m_1uH_50m, 120 uF) | 7.06 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | D1 peak current (5.5 V, 1m_1uH_50m, 120 uF) | 1.93 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | U2 VBUS clamp peak current (5.5 V, 1m_1uH_50m, 120 uF) | 1.19 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | (info) U2 VBUS pin peak (5.5 V, 1m_1uH_50m, 120 uF) | 6.88 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (5.5 V, 1m_1uH_50m, 120 uF): charger input FET trips | 7.06 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | (info) nRF VBUS peak (5.5 V, 1m_1uH_50m, 120 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-1m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (5.5 V, 1m_1uH_50m, 120 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | (info) D1 in breakdown (5.5 V, 2m_1uH_50m, 10 uF): peak at D1 >= VBR min | 6.9 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | IN peak (5.5 V, 2m_1uH_50m, 10 uF) | 7.09 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | D1 peak current (5.5 V, 2m_1uH_50m, 10 uF) | 2.77 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | U2 VBUS clamp peak current (5.5 V, 2m_1uH_50m, 10 uF) | 1.25 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | (info) U2 VBUS pin peak (5.5 V, 2m_1uH_50m, 10 uF) | 6.91 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | (info) IN peak vs VIN_OVP min (5.5 V, 2m_1uH_50m, 10 uF): charger input FET trips | 7.09 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | (info) nRF VBUS peak (5.5 V, 2m_1uH_50m, 10 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-10uF] | (info) IN at the end of the run, ringing tail (5.5 V, 2m_1uH_50m, 10 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | (info) D1 in breakdown (5.5 V, 2m_1uH_50m, 120 uF): peak at D1 >= VBR min | 6.86 V | – … – | SMF5.0A DS (Littelfuse 06/07/17) VBR 6.40-7.00 V at IT 10 mA | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | IN peak (5.5 V, 2m_1uH_50m, 120 uF) | 6.97 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | D1 peak current (5.5 V, 2m_1uH_50m, 120 uF) | 1.49 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | U2 VBUS clamp peak current (5.5 V, 2m_1uH_50m, 120 uF) | 1.15 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | (info) U2 VBUS pin peak (5.5 V, 2m_1uH_50m, 120 uF) | 6.86 V | – … – | USBLC6-2 DS 11265 Rev5 (no VBUS abs max) | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | (info) IN peak vs VIN_OVP min (5.5 V, 2m_1uH_50m, 120 uF): charger input FET trips | 6.97 V | – … – | BQ25180 DS SLUSE99C Table 7.5 VIN_OVP rising 5.5 V min | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | (info) nRF VBUS peak (5.5 V, 2m_1uH_50m, 120 uF) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_grid[5.5V-2m_1uH_50m-120uF] | (info) IN at the end of the run, ringing tail (5.5 V, 2m_1uH_50m, 120 uF) | 5.5 V | – … – | steady state is checked in test_dc_operating_point | ✅ |
test_hotplug_nrf_vbus_abs_max | (info) lowest nRF VBUS peak of the grid (4.5, '1m_0.5uH_100m', 0.00012) | 4.48 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_nrf_vbus_abs_max | nRF VBUS peak, worst of the grid (5.5, '2m_1uH_50m', 1e-05) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-typ] | IN peak (-10 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 7.26 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-typ] | D1 peak current (-10 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 3.82 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-typ] | U2 VBUS clamp peak current (-10 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 1.34 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-typ] | (info) nRF VBUS peak (-10 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-typ] | IN peak (-10 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 7.26 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-typ] | D1 peak current (-10 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 3.8 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-typ] | U2 VBUS clamp peak current (-10 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 1.34 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-typ] | (info) nRF VBUS peak (-10 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-typ] | IN peak (-10 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 7.26 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-typ] | D1 peak current (-10 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 4.2 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-typ] | U2 VBUS clamp peak current (-10 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 1.36 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-typ] | (info) nRF VBUS peak (-10 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-typ] | IN peak (-10 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 7.25 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-typ] | D1 peak current (-10 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 4.18 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-typ] | U2 VBUS clamp peak current (-10 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 1.36 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-typ] | (info) nRF VBUS peak (-10 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-clampmax] | IN peak (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 7.49 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-clampmax] | D1 peak current (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 2.01 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-clampmax] | U2 VBUS clamp peak current (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 2.04 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-clampmax] | (info) nRF VBUS peak (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-clampmax] | IN peak (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 7.48 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-clampmax] | D1 peak current (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 1.99 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-clampmax] | U2 VBUS clamp peak current (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 2.03 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-clampmax] | (info) nRF VBUS peak (-10 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-clampmax] | IN peak (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 7.5 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-clampmax] | D1 peak current (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 2.26 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-clampmax] | U2 VBUS clamp peak current (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 2.09 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-clampmax] | (info) nRF VBUS peak (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[-10C-clampmax] | IN peak (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 7.5 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[-10C-clampmax] | D1 peak current (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 2.24 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[-10C-clampmax] | U2 VBUS clamp peak current (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 2.09 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[-10C-clampmax] | (info) nRF VBUS peak (-10 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-typ] | IN peak (25 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 7.27 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-typ] | D1 peak current (25 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 4.09 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-typ] | U2 VBUS clamp peak current (25 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 1.35 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-typ] | (info) nRF VBUS peak (25 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-typ] | IN peak (25 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 7.27 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-typ] | D1 peak current (25 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 4.07 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-typ] | U2 VBUS clamp peak current (25 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 1.35 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-typ] | (info) nRF VBUS peak (25 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-typ] | IN peak (25 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 7.26 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-typ] | D1 peak current (25 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 4.45 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-typ] | U2 VBUS clamp peak current (25 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 1.37 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-typ] | (info) nRF VBUS peak (25 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-typ] | IN peak (25 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 7.26 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-typ] | D1 peak current (25 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 4.43 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-typ] | U2 VBUS clamp peak current (25 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 1.37 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-typ] | (info) nRF VBUS peak (25 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-clampmax] | IN peak (25 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 7.51 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-clampmax] | D1 peak current (25 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 2.19 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-clampmax] | U2 VBUS clamp peak current (25 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 2.06 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-clampmax] | (info) nRF VBUS peak (25 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-clampmax] | IN peak (25 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 7.51 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-clampmax] | D1 peak current (25 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 2.17 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-clampmax] | U2 VBUS clamp peak current (25 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 2.06 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-clampmax] | (info) nRF VBUS peak (25 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-clampmax] | IN peak (25 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 7.52 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-clampmax] | D1 peak current (25 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 2.42 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-clampmax] | U2 VBUS clamp peak current (25 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 2.11 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-clampmax] | (info) nRF VBUS peak (25 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[25C-clampmax] | IN peak (25 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 7.52 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[25C-clampmax] | D1 peak current (25 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 2.4 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[25C-clampmax] | U2 VBUS clamp peak current (25 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 2.11 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[25C-clampmax] | (info) nRF VBUS peak (25 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-typ] | IN peak (60 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 7.29 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-typ] | D1 peak current (60 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 3.77 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-typ] | U2 VBUS clamp peak current (60 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 1.32 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-typ] | (info) nRF VBUS peak (60 C, TVS typ, b:C1 x0.90, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-typ] | IN peak (60 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 7.28 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-typ] | D1 peak current (60 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 3.75 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-typ] | U2 VBUS clamp peak current (60 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 1.32 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-typ] | (info) nRF VBUS peak (60 C, TVS typ, b:C1 x0.90, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-typ] | IN peak (60 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 7.28 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-typ] | D1 peak current (60 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 4.15 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-typ] | U2 VBUS clamp peak current (60 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 1.34 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-typ] | (info) nRF VBUS peak (60 C, TVS typ, b:C1 x1.10, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-typ] | IN peak (60 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 7.28 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-typ] | D1 peak current (60 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 4.12 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-typ] | U2 VBUS clamp peak current (60 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 1.34 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-typ] | (info) nRF VBUS peak (60 C, TVS typ, b:C1 x1.10, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-clampmax] | IN peak (60 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 7.51 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-clampmax] | D1 peak current (60 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 1.99 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-clampmax] | U2 VBUS clamp peak current (60 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 2.01 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-clampmax] | (info) nRF VBUS peak (60 C, TVS clampmax, b:C1 x0.90, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-clampmax] | IN peak (60 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 7.51 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-clampmax] | D1 peak current (60 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 1.97 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-clampmax] | U2 VBUS clamp peak current (60 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 2 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-clampmax] | (info) nRF VBUS peak (60 C, TVS clampmax, b:C1 x0.90, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-clampmax] | IN peak (60 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 7.53 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-clampmax] | D1 peak current (60 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 2.24 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-clampmax] | U2 VBUS clamp peak current (60 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 2.06 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-clampmax] | (info) nRF VBUS peak (60 C, TVS clampmax, b:C1 x1.10, m:C12 x0.90) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_corners[60C-clampmax] | IN peak (60 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 7.53 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_hotplug_corners[60C-clampmax] | D1 peak current (60 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 2.22 A | – … 21.7 A | SMF5.0A DS (Littelfuse 06/07/17) IPP 21.7 A 10/1000 us | ✅ |
test_hotplug_corners[60C-clampmax] | U2 VBUS clamp peak current (60 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 2.06 A | – … 5 A | USBLC6-2 DS 11265 Rev5 Table 2: VCL characterised up to IPP 5 A 8/20 us | ✅ |
test_hotplug_corners[60C-clampmax] | (info) nRF VBUS peak (60 C, TVS clampmax, b:C1 x1.10, m:C12 x1.10) | 5.49 V | – … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[-10-clampmax-1.8] | nRF VBUS peak with 1.8 Ohm (-10 C, TVS clampmax, {'m:C12': 0.9}) | 5.5 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[-10-clampmax-1.8] | nRF VBUS peak with 1.8 Ohm (-10 C, TVS clampmax, {'m:C12': 1.1}) | 5.5 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[-10-clampmax-1.8] | nRF VBUS DC with 1.8 Ohm at VBUS 4.5 V, IIN 1.1 A | 4.39 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[-10-clampmax-4.7] | nRF VBUS peak with 4.7 Ohm (-10 C, TVS clampmax, {'m:C12': 0.9}) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[-10-clampmax-4.7] | nRF VBUS peak with 4.7 Ohm (-10 C, TVS clampmax, {'m:C12': 1.1}) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[-10-clampmax-4.7] | nRF VBUS DC with 4.7 Ohm at VBUS 4.5 V, IIN 1.1 A | 4.38 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[25-typ-1.8] | nRF VBUS peak with 1.8 Ohm (25 C, TVS typ, {'m:C12': 0.9}) | 5.5 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[25-typ-1.8] | nRF VBUS peak with 1.8 Ohm (25 C, TVS typ, {'m:C12': 1.1}) | 5.5 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[25-typ-1.8] | nRF VBUS DC with 1.8 Ohm at VBUS 4.5 V, IIN 1.1 A | 4.39 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[25-typ-4.7] | nRF VBUS peak with 4.7 Ohm (25 C, TVS typ, {'m:C12': 0.9}) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[25-typ-4.7] | nRF VBUS peak with 4.7 Ohm (25 C, TVS typ, {'m:C12': 1.1}) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[25-typ-4.7] | nRF VBUS DC with 4.7 Ohm at VBUS 4.5 V, IIN 1.1 A | 4.38 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[60-clampmax-1.8] | nRF VBUS peak with 1.8 Ohm (60 C, TVS clampmax, {'m:C12': 0.9}) | 5.5 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[60-clampmax-1.8] | nRF VBUS peak with 1.8 Ohm (60 C, TVS clampmax, {'m:C12': 1.1}) | 5.5 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[60-clampmax-1.8] | nRF VBUS DC with 1.8 Ohm at VBUS 4.5 V, IIN 1.1 A | 4.39 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[60-clampmax-4.7] | nRF VBUS peak with 4.7 Ohm (60 C, TVS clampmax, {'m:C12': 0.9}) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[60-clampmax-4.7] | nRF VBUS peak with 4.7 Ohm (60 C, TVS clampmax, {'m:C12': 1.1}) | 5.49 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_hotplug_fix_preview_nrf_series_r[60-clampmax-4.7] | nRF VBUS DC with 4.7 Ohm at VBUS 4.5 V, IIN 1.1 A | 4.38 V | 4.35 V … 5.5 V | nRF52840 PS v1.1 5.3.8.5 VBUS 4.35-5.5 V | ✅ |
test_esd_vbus[8.0-50.0] | (info) gun peak current (+8 kV on VBUS, harness 50 mm) | 30.1 A | – … – | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_esd_vbus[8.0-50.0] | (info) D1 peak current (+8 kV on VBUS, harness 50 mm) | 17.6 A | – … – | SMF5.0A DS: IEC 61000-4-2 30 kV contact rating | ✅ |
test_esd_vbus[8.0-50.0] | (info) U2 VBUS clamp peak current (+8 kV on VBUS, harness 50 mm) | 9.26 A | – … – | USBLC6-2 DS 11265 Rev5 Table 1: IEC 61000-4-2 15 kV contact | ✅ |
test_esd_vbus[8.0-50.0] | IN max (+8 kV on VBUS, harness 50 mm) | 2.66 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_vbus[8.0-50.0] | IN clamp current (+8 kV on VBUS, harness 50 mm) | 26.6 pA | – … 1.67 A | BQ25180 DS SLUSE99C Table 7.2 HBM +-2500 V -> 1.67 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[8.0-50.0] | nRF VBUS max (+8 kV on VBUS, harness 50 mm) | 1.26 V | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_vbus[8.0-50.0] | nRF VBUS pad current (+8 kV on VBUS, harness 50 mm) | 128 nA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[8.0-50.0] | (info) IN min, open-circuit view (+8 kV on VBUS, harness 50 mm) | 40.2 mV | – … – | BQ25180 DS SLUSE99C Table 7.1 IN abs min -0.3 V | ✅ |
test_esd_vbus[8.0-100.0] | (info) gun peak current (+8 kV on VBUS, harness 100 mm) | 30.1 A | – … – | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_esd_vbus[8.0-100.0] | (info) D1 peak current (+8 kV on VBUS, harness 100 mm) | 17.8 A | – … – | SMF5.0A DS: IEC 61000-4-2 30 kV contact rating | ✅ |
test_esd_vbus[8.0-100.0] | (info) U2 VBUS clamp peak current (+8 kV on VBUS, harness 100 mm) | 9.34 A | – … – | USBLC6-2 DS 11265 Rev5 Table 1: IEC 61000-4-2 15 kV contact | ✅ |
test_esd_vbus[8.0-100.0] | IN max (+8 kV on VBUS, harness 100 mm) | 2.68 V | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_vbus[8.0-100.0] | IN clamp current (+8 kV on VBUS, harness 100 mm) | 26.8 pA | – … 1.67 A | BQ25180 DS SLUSE99C Table 7.2 HBM +-2500 V -> 1.67 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[8.0-100.0] | nRF VBUS max (+8 kV on VBUS, harness 100 mm) | 851 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_vbus[8.0-100.0] | nRF VBUS pad current (+8 kV on VBUS, harness 100 mm) | 86.5 nA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[8.0-100.0] | (info) IN min, open-circuit view (+8 kV on VBUS, harness 100 mm) | 40.2 mV | – … – | BQ25180 DS SLUSE99C Table 7.1 IN abs min -0.3 V | ✅ |
test_esd_vbus[-8.0-50.0] | (info) gun peak current (-8 kV on VBUS, harness 50 mm) | 30.1 A | – … – | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_esd_vbus[-8.0-50.0] | (info) D1 peak current (-8 kV on VBUS, harness 50 mm) | 17.4 A | – … – | SMF5.0A DS: IEC 61000-4-2 30 kV contact rating | ✅ |
test_esd_vbus[-8.0-50.0] | (info) U2 VBUS clamp peak current (-8 kV on VBUS, harness 50 mm) | 120 pA | – … – | USBLC6-2 DS 11265 Rev5 Table 1: IEC 61000-4-2 15 kV contact | ✅ |
test_esd_vbus[-8.0-50.0] | IN max (-8 kV on VBUS, harness 50 mm) | -38.4 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_vbus[-8.0-50.0] | IN clamp current (-8 kV on VBUS, harness 50 mm) | 350 mA | – … 1.67 A | BQ25180 DS SLUSE99C Table 7.2 HBM +-2500 V -> 1.67 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[-8.0-50.0] | nRF VBUS max (-8 kV on VBUS, harness 50 mm) | -23.7 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_vbus[-8.0-50.0] | nRF VBUS pad current (-8 kV on VBUS, harness 50 mm) | 27.7 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[-8.0-50.0] | (info) IN min, open-circuit view (-8 kV on VBUS, harness 50 mm) | -1.92 V | – … – | BQ25180 DS SLUSE99C Table 7.1 IN abs min -0.3 V | ✅ |
test_esd_vbus[-8.0-100.0] | (info) gun peak current (-8 kV on VBUS, harness 100 mm) | 30.1 A | – … – | IEC 61000-4-2:2008 Table 2 level 4 (8 kV contact), reproduced in Vishay SMF DS 85881 Fig. 1 | ✅ |
test_esd_vbus[-8.0-100.0] | (info) D1 peak current (-8 kV on VBUS, harness 100 mm) | 17.5 A | – … – | SMF5.0A DS: IEC 61000-4-2 30 kV contact rating | ✅ |
test_esd_vbus[-8.0-100.0] | (info) U2 VBUS clamp peak current (-8 kV on VBUS, harness 100 mm) | 120 pA | – … – | USBLC6-2 DS 11265 Rev5 Table 1: IEC 61000-4-2 15 kV contact | ✅ |
test_esd_vbus[-8.0-100.0] | IN max (-8 kV on VBUS, harness 100 mm) | -38.4 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_vbus[-8.0-100.0] | IN clamp current (-8 kV on VBUS, harness 100 mm) | 354 mA | – … 1.67 A | BQ25180 DS SLUSE99C Table 7.2 HBM +-2500 V -> 1.67 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[-8.0-100.0] | nRF VBUS max (-8 kV on VBUS, harness 100 mm) | 38.5 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_vbus[-8.0-100.0] | nRF VBUS pad current (-8 kV on VBUS, harness 100 mm) | 5.38 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_vbus[-8.0-100.0] | (info) IN min, open-circuit view (-8 kV on VBUS, harness 100 mm) | -1.93 V | – … – | BQ25180 DS SLUSE99C Table 7.1 IN abs min -0.3 V | ✅ |
test_esd_data_lines_vbus_side[dp+8kV-50.0] | (info) U2 I/O clamp peak (+8 kV on DP, harness 50 mm) | 59.4 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dp+8kV-50.0] | IN max (+8 kV on DP, harness 50 mm) | 308 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dp+8kV-50.0] | nRF VBUS max (+8 kV on DP, harness 50 mm) | 379 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dp+8kV-100.0] | (info) U2 I/O clamp peak (+8 kV on DP, harness 100 mm) | 59.8 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dp+8kV-100.0] | IN max (+8 kV on DP, harness 100 mm) | 348 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dp+8kV-100.0] | nRF VBUS max (+8 kV on DP, harness 100 mm) | 254 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dp-8kV-50.0] | (info) U2 I/O clamp peak (-8 kV on DP, harness 50 mm) | 29.4 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dp-8kV-50.0] | IN max (-8 kV on DP, harness 50 mm) | 15.1 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dp-8kV-50.0] | nRF VBUS max (-8 kV on DP, harness 50 mm) | 49.8 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dp-8kV-100.0] | (info) U2 I/O clamp peak (-8 kV on DP, harness 100 mm) | 29.5 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dp-8kV-100.0] | IN max (-8 kV on DP, harness 100 mm) | 23.3 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dp-8kV-100.0] | nRF VBUS max (-8 kV on DP, harness 100 mm) | 41.5 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dm+8kV-50.0] | (info) U2 I/O clamp peak (+8 kV on DM, harness 50 mm) | 59.4 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dm+8kV-50.0] | IN max (+8 kV on DM, harness 50 mm) | 308 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dm+8kV-50.0] | nRF VBUS max (+8 kV on DM, harness 50 mm) | 376 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dm+8kV-100.0] | (info) U2 I/O clamp peak (+8 kV on DM, harness 100 mm) | 59.9 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dm+8kV-100.0] | IN max (+8 kV on DM, harness 100 mm) | 349 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dm+8kV-100.0] | nRF VBUS max (+8 kV on DM, harness 100 mm) | 252 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dm-8kV-50.0] | (info) U2 I/O clamp peak (-8 kV on DM, harness 50 mm) | 29.4 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dm-8kV-50.0] | IN max (-8 kV on DM, harness 50 mm) | 15.1 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dm-8kV-50.0] | nRF VBUS max (-8 kV on DM, harness 50 mm) | 49.6 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_vbus_side[dm-8kV-100.0] | (info) U2 I/O clamp peak (-8 kV on DM, harness 100 mm) | 29.5 V | – … – | USBLC6-2 DS 11265 Rev5 2.1 (VCL+ ~31 V at 24 A typ) | ✅ |
test_esd_data_lines_vbus_side[dm-8kV-100.0] | IN max (-8 kV on DM, harness 100 mm) | 23.4 mV | – … 25 V | BQ25180 DS SLUSE99C Table 7.1 IN abs max 25 V | ✅ |
test_esd_data_lines_vbus_side[dm-8kV-100.0] | nRF VBUS max (-8 kV on DM, harness 100 mm) | 41.4 mV | – … 5.8 V | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_esd_data_lines_nrf_pad_current[dp+8kV] | (info) nRF DP pad voltage (+8 kV on DP) | 4.71 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current[dp+8kV] | nRF DP pad current, on-chip clamp 3 Ohm (+8 kV on DP) | 1.27 A | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_data_lines_nrf_pad_current[dp-8kV] | (info) nRF DP pad voltage (-8 kV on DP) | 3.88 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current[dp-8kV] | nRF DP pad current, on-chip clamp 3 Ohm (-8 kV on DP) | 995 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_data_lines_nrf_pad_current[dm+8kV] | (info) nRF DM pad voltage (+8 kV on DM) | 4.69 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current[dm+8kV] | nRF DM pad current, on-chip clamp 3 Ohm (+8 kV on DM) | 1.26 A | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_data_lines_nrf_pad_current[dm-8kV] | (info) nRF DM pad voltage (-8 kV on DM) | 3.87 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current[dm-8kV] | nRF DM pad current, on-chip clamp 3 Ohm (-8 kV on DM) | 990 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_data_lines_nrf_pad_current_short_harness[dp+8kV] | (info) nRF DP pad voltage (+8 kV on DP, harness 50 mm) | 5.78 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current_short_harness[dp+8kV] | nRF DP pad current, on-chip clamp 3 Ohm (+8 kV on DP, harness 50 mm) | 1.62 A | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ❌ |
test_esd_data_lines_nrf_pad_current_short_harness[dp-8kV] | (info) nRF DP pad voltage (-8 kV on DP, harness 50 mm) | 4.67 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current_short_harness[dp-8kV] | nRF DP pad current, on-chip clamp 3 Ohm (-8 kV on DP, harness 50 mm) | 1.26 A | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_data_lines_nrf_pad_current_short_harness[dm+8kV] | (info) nRF DM pad voltage (+8 kV on DM, harness 50 mm) | 5.75 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current_short_harness[dm+8kV] | nRF DM pad current, on-chip clamp 3 Ohm (+8 kV on DM, harness 50 mm) | 1.61 A | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ❌ |
test_esd_data_lines_nrf_pad_current_short_harness[dm-8kV] | (info) nRF DM pad voltage (-8 kV on DM, harness 50 mm) | 4.65 V | – … – | nRF52840 PS v1.1 Table 173 I/O pin VDD + 0.3 V (DC rating, not an ESD limit) | ✅ |
test_esd_data_lines_nrf_pad_current_short_harness[dm-8kV] | nRF DM pad current, on-chip clamp 3 Ohm (-8 kV on DM, harness 50 mm) | 1.25 A | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dp+8kV-50.0] | nRF DP pad current with 2nd-stage USBLC6 (+8 kV, harness 50 mm) | 837 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dp+8kV-100.0] | nRF DP pad current with 2nd-stage USBLC6 (+8 kV, harness 100 mm) | 638 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dp-8kV-50.0] | nRF DP pad current with 2nd-stage USBLC6 (-8 kV, harness 50 mm) | 546 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dp-8kV-100.0] | nRF DP pad current with 2nd-stage USBLC6 (-8 kV, harness 100 mm) | 427 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dm+8kV-50.0] | nRF DM pad current with 2nd-stage USBLC6 (+8 kV, harness 50 mm) | 831 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dm+8kV-100.0] | nRF DM pad current with 2nd-stage USBLC6 (+8 kV, harness 100 mm) | 635 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dm-8kV-50.0] | nRF DM pad current with 2nd-stage USBLC6 (-8 kV, harness 50 mm) | 543 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_esd_fix_preview_second_stage[dm-8kV-100.0] | nRF DM pad current with 2nd-stage USBLC6 (-8 kV, harness 100 mm) | 425 mA | – … 1.33 A | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_fault_c1_wrong_value_breaks_vbus_capacitance | FAULT C1=10u: sink VBUS capacitance exceeds the Type-C limit (detected) | 14.6 µF | 10 µF … – | USB Type-C R2.0 Table 4-3 sink VBUS capacitance 10 uF max (not attached) | ✅ |
test_fault_rd_left_off | FAULT R1 off: CC1 voltage above the Default vRd window (detected) | 5.5 V | 1.5 V … – | USB Type-C R2.0 Table 4-32 vRd max 1.50 V / vOPEN >= 1.65 V | ✅ |
test_fault_rd_wired_to_wrong_cc | FAULT Rd2 on CC1: CC2 voltage above the 3.0 A vRd window (detected) | 4.75 V | 2.45 V … – | USB Type-C R2.0 Table 4-34 vRd max 2.45 V | ✅ |
test_fault_tvs_reversed | FAULT D1 reversed: D1 DC current at VBUS 5 V far above IT (detected) | 32.3 A | 10 mA … – | SMF5.0A DS (Littelfuse 06/07/17) VBR test current IT 10 mA (VBR min 6.40 V) | ✅ |
test_fault_c12_x10_breaks_vbus_capacitance | FAULT C12=47u: sink VBUS capacitance exceeds the Type-C limit (detected) | 17.6 µF | 10 µF … – | USB Type-C R2.0 Table 4-3 sink VBUS capacitance 10 uF max (not attached) | ✅ |
test_fault_c1_left_off_breaks_cin | FAULT C1 left off: CIN below the BQ25180 minimum (detected) | -25.3 pF | – … 1 µF | BQ25180 DS SLUSE99C 9.2.2.1 + Table 9-2 CIN 1 uF (after derating) .. 10 uF | ✅ |
test_fault_rd_x10 | FAULT R2=51k: CC2 voltage above the Default vRd window (detected) | 2.53 V | 1.5 V … – | USB Type-C R2.0 Table 4-32 vRd max 1.50 V / vOPEN >= 1.65 V | ✅ |
test_fault_u2_vbus_pin_on_gnd | FAULT U2 VBUS pin on GND: D+ high level at J1 below VOH (detected) | 1 V | – … 2.8 V | USB 2.0 Spec Rev 2.0 Table 7-7 VOH 2.8 V min (15 kOhm to GND) | ✅ |
test_fault_u2_gnd_pin_on_vbus | FAULT U2 GND pin on VBUS: D- low level at J1 above VOL (detected) | 3.91 V | 300 mV … – | USB 2.0 Spec Rev 2.0 Table 7-7 VOL 0.3 V max (1.5 kOhm to 3.6 V) | ✅ |
test_fault_c12_left_off_esd | FAULT C12 left off: nRF VBUS peak on +8 kV at VBUS above abs max (detected) | 6.69 V | 5.8 V … – | nRF52840 PS v1.1 Table 173 VBUS -0.3..+5.8 V | ✅ |
test_fault_u2_left_off_with_second_stage[dp-8.0] | FAULT U2 left off (2nd stage fitted): nRF DP pad current on +8 kV (detected) | 5.53 A | 1.33 A … – | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_fault_u2_left_off_with_second_stage[dm--8.0] | FAULT U2 left off (2nd stage fitted): nRF DM pad current on -8 kV (detected) | 4.15 A | 1.33 A … – | nRF52840 PS v1.1 Table 173 ESD HBM 2 kV (aQFN73) -> 1.33 A HBM peak (100 pF / 1.5 kOhm) | ✅ |
test_divider_matches_firmware_constant | VSYS / VSENSE (nominal, unloaded) | 3.2 | 3.2 … 3.2 | firmware.md §3.1 DTS vsys-sense full-ohms 3.2 MΩ / output-ohms 1 MΩ | ✅ |
test_divider_matches_firmware_constant | code at VSYS 3.70 V (ideal SAADC) | 1.32 kLSB | 1.32 kLSB … 1.32 kLSB | firmware.md §12.4 example: 3.70 V gives code 1316 | ✅ |
test_divider_matches_firmware_constant | code at VSYS 4.40 V (ideal SAADC) | 1.56 kLSB | 1.56 kLSB … 1.56 kLSB | firmware.md §12.4 example: 4.40 V gives code 1564 | ✅ |
test_divider_matches_firmware_constant | code at VSYS 4.50 V (ideal SAADC) | 1.6 kLSB | 1.6 kLSB … 1.6 kLSB | firmware.md §12.4 VSYS = code x 2.8125 mV: 4.50 V (SYS_REG POR default) gives code 1600 | ✅ |
test_input_range[-10.0] | VSENSE max at VSYS 3.0 V, -10 °C | 955 mV | – … 2.47 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[-10.0] | VSENSE max at VSYS 3.7 V, -10 °C | 1.18 V | – … 3.17 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[-10.0] | VSENSE max at VSYS 4.2 V, -10 °C | 1.34 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[-10.0] | VSENSE max at VSYS 4.59 V, -10 °C | 1.46 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[-10.0] | VSENSE max at VSYS 5.5 V, -10 °C | 1.75 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[-10.0] | VSENSE max at 5.5 V vs full scale, -10 °C | 1.75 V | – … 3.6 V | nRF52840 PS v1.1 §6.23.2 input range 0.6 V / (1/6) = 3.6 V | ✅ |
test_input_range[-10.0] | VSENSE min at VSYS 3.0 V, -10 °C | 920 mV | 0.0V … – | nRF52840 PS v1.1 §6.23.2 'not lower than VSS' | ✅ |
test_input_range[-10.0] | code max at 5.5 V incl. EG +3 %, VOS, CEG, -10 °C | 2.07 kLSB | – … 4.09 kLSB | nRF52840 PS v1.1 §6.23.10.1 EG1/6, 12-bit full scale (no clipping) | ✅ |
test_input_range[25.0] | VSENSE max at VSYS 3.0 V, 25 °C | 950 mV | – … 2.47 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[25.0] | VSENSE max at VSYS 3.7 V, 25 °C | 1.17 V | – … 3.17 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[25.0] | VSENSE max at VSYS 4.2 V, 25 °C | 1.33 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[25.0] | VSENSE max at VSYS 4.59 V, 25 °C | 1.45 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[25.0] | VSENSE max at VSYS 5.5 V, 25 °C | 1.74 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[25.0] | VSENSE max at 5.5 V vs full scale, 25 °C | 1.74 V | – … 3.6 V | nRF52840 PS v1.1 §6.23.2 input range 0.6 V / (1/6) = 3.6 V | ✅ |
test_input_range[25.0] | VSENSE min at VSYS 3.0 V, 25 °C | 924 mV | 0.0V … – | nRF52840 PS v1.1 §6.23.2 'not lower than VSS' | ✅ |
test_input_range[25.0] | code max at 5.5 V incl. EG +3 %, VOS, CEG, 25 °C | 2.05 kLSB | – … 4.09 kLSB | nRF52840 PS v1.1 §6.23.10.1 EG1/6, 12-bit full scale (no clipping) | ✅ |
test_input_range[60.0] | VSENSE max at VSYS 3.0 V, 60 °C | 955 mV | – … 2.47 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[60.0] | VSENSE max at VSYS 3.7 V, 60 °C | 1.18 V | – … 3.17 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[60.0] | VSENSE max at VSYS 4.2 V, 60 °C | 1.34 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[60.0] | VSENSE max at VSYS 4.59 V, 60 °C | 1.46 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[60.0] | VSENSE max at VSYS 5.5 V, 60 °C | 1.75 V | – … 3.23 V | nRF52840 PS v1.1 §6.23.2 'AIN cannot exceed VDD'; VDD min = RT9080 DS9080-09 §14 (−2 % / VDROP 0.53 V) | ✅ |
test_input_range[60.0] | VSENSE max at 5.5 V vs full scale, 60 °C | 1.75 V | – … 3.6 V | nRF52840 PS v1.1 §6.23.2 input range 0.6 V / (1/6) = 3.6 V | ✅ |
test_input_range[60.0] | VSENSE min at VSYS 3.0 V, 60 °C | 918 mV | 0.0V … – | nRF52840 PS v1.1 §6.23.2 'not lower than VSS' | ✅ |
test_input_range[60.0] | code max at 5.5 V incl. EG +3 %, VOS, CEG, 60 °C | 2.07 kLSB | – … 4.09 kLSB | nRF52840 PS v1.1 §6.23.10.1 EG1/6, 12-bit full scale (no clipping) | ✅ |
test_fault_divider_errors_violate_input_range[R1_R2_swapped] | fault R1_R2_swapped: worst VSENSE − VDD_min over VSYS 3.0 ... 5.5 V | 545 mV | 0.0V … – | must violate: nRF52840 PS v1.1 §6.23.2 AIN ≤ VDD (RT9080 −2 %) | ✅ |
test_fault_divider_errors_violate_input_range[R1_220k] | fault R1_220k: worst VSENSE − VDD_min over VSYS 3.0 ... 5.5 V | 1.27 V | 0.0V … – | must violate: nRF52840 PS v1.1 §6.23.2 AIN ≤ VDD (RT9080 −2 %) | ✅ |
test_fault_divider_errors_violate_input_range[R2_left_off] | fault R2_left_off: worst VSENSE − VDD_min over VSYS 3.0 ... 5.5 V | 2.25 V | 0.0V … – | must violate: nRF52840 PS v1.1 §6.23.2 AIN ≤ VDD (RT9080 −2 %) | ✅ |
test_fault_divider_errors_violate_input_range[R1_shorted] | fault R1_shorted: worst VSENSE − VDD_min over VSYS 3.0 ... 5.5 V | 2.27 V | 0.0V … – | must violate: nRF52840 PS v1.1 §6.23.2 AIN ≤ VDD (RT9080 −2 %) | ✅ |
test_saadc_model_reproduces_ps_table95 | tACQ 3 µs, Rsource 10 kΩ: | error | 0.0V | – … 439 µV | |
test_saadc_model_reproduces_ps_table95 | tACQ 3 µs, Rsource 100 kΩ (10x): | error | 6.81 mV | 439 µV … – | |
test_saadc_model_reproduces_ps_table95 | tACQ 5 µs, Rsource 40 kΩ: | error | 0.0V | – … 439 µV | |
test_saadc_model_reproduces_ps_table95 | tACQ 5 µs, Rsource 400 kΩ (10x): | error | 156 mV | 439 µV … – | |
test_saadc_model_reproduces_ps_table95 | tACQ 10 µs, Rsource 100 kΩ: | error | 0.0V | – … 439 µV | |
test_saadc_model_reproduces_ps_table95 | tACQ 10 µs, Rsource 1000 kΩ (10x): | error | 244 mV | 439 µV … – | |
test_saadc_model_reproduces_ps_table95 | tACQ 15 µs, Rsource 200 kΩ: | error | 0.0V | – … 439 µV | |
test_saadc_model_reproduces_ps_table95 | tACQ 15 µs, Rsource 2000 kΩ (10x): | error | 384 mV | 439 µV … – | |
test_saadc_model_reproduces_ps_table95 | tACQ 20 µs, Rsource 400 kΩ: | error | 140 µV | – … 439 µV | |
test_saadc_model_reproduces_ps_table95 | tACQ 20 µs, Rsource 4000 kΩ (10x): | error | 605 mV | 439 µV … – | |
test_saadc_model_reproduces_ps_table95 | tACQ 40 µs, Rsource 800 kΩ: | error | 137 µV | – … 439 µV | |
test_saadc_model_reproduces_ps_table95 | tACQ 40 µs, Rsource 8000 kΩ (10x): | error | 604 mV | 439 µV … – | |
test_charge_sharing_matches_closed_form | charge-sharing step per sample, SPICE / closed form | 997 m | 970 m … 1.03 | closed form, nRF52840 PS v1.1 CSAMPLE 2.5 pF + CPAD 3 pF | ✅ |
test_sampling_error_vs_tacq[3us] | tACQ 3 µs: | 8x average sampling error | , C5 fitted | 357 µV | – … 439 µV |
test_sampling_error_vs_tacq[5us] | tACQ 5 µs: | 8x average sampling error | , C5 fitted | 357 µV | – … 439 µV |
test_sampling_error_vs_tacq[10us] | tACQ 10 µs: | 8x average sampling error | , C5 fitted | 357 µV | – … 439 µV |
test_sampling_error_vs_tacq[15us] | tACQ 15 µs: | 8x average sampling error | , C5 fitted | 357 µV | – … 439 µV |
test_sampling_error_vs_tacq[20us] | tACQ 20 µs: | 8x average sampling error | , C5 fitted | 357 µV | – … 439 µV |
test_sampling_error_vs_tacq[40us] | tACQ 40 µs: | 8x average sampling error | , C5 fitted | 356 µV | – … 439 µV |
test_tacq_robustness_without_c5 | R1 | R2 at +tolerance (Thevenin source without C5) | 694 kΩ | – … 800 kΩ | |
test_tacq_robustness_without_c5 | tACQ 40 µs, C5 missing: | 8x average sampling error | 20.5 µV | – … 439 µV | |
test_fault_c5_missing_detected_at_short_tacq | fault C5 removed, tACQ 3 µs: | 8x average sampling error | 295 mV | 439 µV … – | |
test_fault_c5_decade_low_detected_at_fw_tacq | fault C5 / 10, tACQ 40 µs: | 8x average sampling error | 3.47 mV | 439 µV … – | |
test_sample_interval | burst every 1 s: | 8x average error | , steady state | 356 µV | – … 439 µV |
test_sample_interval | shortest burst interval meeting 0.5 LSB12 (of 1 / 0.2 / 0.1 / 0.05 s) | 200 ms | – … 1 s | recommendation; must not exceed the firmware's 1 s fastest rate | ✅ |
test_sample_interval | info: burst every 1 s, | 8x average error | 356 µV | – … – | |
test_sample_interval | info: burst every 0.2 s, | 8x average error | 371 µV | – … – | |
test_sample_interval | info: burst every 0.1 s, | 8x average error | 470 µV | – … – | |
test_sample_interval | info: burst every 0.05 s, | 8x average error | 761 µV | – … – | |
test_vsys_ripple_rejection | ripple at AIN0 (half p-p), 0.73 A x 0.25 Ω at 2 kHz | 68.4 µV | – … 439 µV | ripple; architecture.md §8.4 0.73 A, firmware.md §12.4 0.25 Ω, 2 kHz PWM (§6.4): 0.5 LSB12 at gain 1/6 = 0.439 mV (nRF52840 PS v1.1 §6.23.2 3.6 V FS / 4096; the model meets every Table 95 row to this criterion, test_saadc_model_reproduces_ps_table95) | ✅ |
test_fault_c5_missing_detected_by_ripple | fault C5 removed: ripple at AIN0 (half p-p) | 28.5 mV | 439 µV … – | must violate: ripple: 0.5 LSB12 at gain 1/6 = 0.439 mV (nRF52840 PS v1.1 §6.23.2 3.6 V FS / 4096; the model meets every Table 95 row to this criterion, test_saadc_model_reproduces_ps_table95) | ✅ |
test_raw_gain_production_window | raw gain deviation at 3.800 V, all corners (25 °C) | 52.5 m | – … 30 m | pre-VSENSE-2 firmware.md §16 test 8 'raw gain within ±3 %' | ❌ |
test_raw_gain_production_window_with_fw_rule | raw gain deviation at 3.800 V, all corners (25 °C), calibration reference DMM-at-TP1 | 52.5 m | – … 55 m | firmware rule firmware.md §16 test 8 'Raw gain within ±5.5 %' (VSENSE-2); reference DMM at TP1 or board under 5 mA (VSENSE-5) | ✅ |
test_raw_gain_production_window_with_fw_rule | raw gain deviation at 3.800 V, all corners (25 °C), calibration reference board-under-5mA | 52.8 m | – … 55 m | firmware rule firmware.md §16 test 8 'Raw gain within ±5.5 %' (VSENSE-2); reference DMM at TP1 or board under 5 mA (VSENSE-5) | ✅ |
test_uncalibrated_error_bringup | uncalibrated | error | at 3.0 / 3.7 / 4.5 V, all corners (25 °C) | 51.7 m | – … 20 m |
test_uncalibrated_error_bringup_with_fw_rule | uncalibrated | error | at 3.0 / 3.7 / 4.5 V, all corners (25 °C) | 51.7 m | – … 55 m |
test_calibrated_accuracy_25c | calibrated | error | over 3.3 ... 4.5 V, 25 °C | 7.46 mV | – … 20 mV |
test_calibrated_accuracy_25c | calibrated | error | at 3.48 V (pre-VSENSE-1 SHIP threshold), 25 °C | 4.39 mV | – … 10 mV |
test_calibrated_accuracy_25c | calibrated | error | at 3.5393 V (SHIP threshold reading), 25 °C, calibration reference DMM-at-TP1 | 4.07 mV | – … 10 mV |
test_calibrated_accuracy_25c | calibrated | error | at 3.5393 V (SHIP threshold reading), 25 °C, calibration reference board-under-5mA | 5.18 mV | – … 10 mV |
test_calibrated_accuracy_fresh_15_35c_with_fw_rule[15.0] | calibrated | error | at 3.5393 V, 15 °C, fresh unit, calibration reference DMM-at-TP1 | 16.3 mV | – … 24 mV |
test_calibrated_accuracy_fresh_15_35c_with_fw_rule[15.0] | calibrated | error | at 3.5393 V, 15 °C, fresh unit, calibration reference board-under-5mA | 17.3 mV | – … 24 mV |
test_calibrated_accuracy_fresh_15_35c_with_fw_rule[25.0] | calibrated | error | at 3.5393 V, 25 °C, fresh unit, calibration reference DMM-at-TP1 | 4.07 mV | – … 24 mV |
test_calibrated_accuracy_fresh_15_35c_with_fw_rule[25.0] | calibrated | error | at 3.5393 V, 25 °C, fresh unit, calibration reference board-under-5mA | 5.18 mV | – … 24 mV |
test_calibrated_accuracy_fresh_15_35c_with_fw_rule[35.0] | calibrated | error | at 3.5393 V, 35 °C, fresh unit, calibration reference DMM-at-TP1 | 23.7 mV | – … 24 mV |
test_calibrated_accuracy_fresh_15_35c_with_fw_rule[35.0] | calibrated | error | at 3.5393 V, 35 °C, fresh unit, calibration reference board-under-5mA | 22.5 mV | – … 24 mV |
test_calibrated_accuracy_over_temperature[-10.0] | calibrated | error | at 3.48 V, -10 °C (TCR, CEG, VOS, C5 IR) | 46.4 mV | – … 10 mV |
test_calibrated_accuracy_over_temperature[60.0] | calibrated | error | at 3.48 V, 60 °C (TCR, CEG, VOS, C5 IR) | 53.5 mV | – … 10 mV |
test_ship_threshold_above_vbatpor[-10.0] | true VBAT at a 3.48 V reading, -10 °C | 3.43 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V (pre-VSENSE-1 firmware.md §12.4 SHIP 3.48 V) | ❌ |
test_ship_threshold_above_vbatpor[15.0] | true VBAT at a 3.48 V reading, 15 °C | 3.46 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V (pre-VSENSE-1 firmware.md §12.4 SHIP 3.48 V) | ✅ |
test_ship_threshold_above_vbatpor[25.0] | true VBAT at a 3.48 V reading, 25 °C | 3.48 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V (pre-VSENSE-1 firmware.md §12.4 SHIP 3.48 V) | ✅ |
test_ship_threshold_above_vbatpor[35.0] | true VBAT at a 3.48 V reading, 35 °C | 3.46 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V (pre-VSENSE-1 firmware.md §12.4 SHIP 3.48 V) | ✅ |
test_ship_threshold_above_vbatpor[60.0] | true VBAT at a 3.48 V reading, 60 °C | 3.43 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V (pre-VSENSE-1 firmware.md §12.4 SHIP 3.48 V) | ❌ |
test_calibrated_accuracy_over_temperature_with_fw_rule[-10.0] | calibrated over-read at 3.5393 V, -10 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference DMM-at-TP1 | 46.6 mV | – … 48 mV | firmware.md §12.4 fresh unit over −10…60 °C: reading up to 48 mV high / 55 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_calibrated_accuracy_over_temperature_with_fw_rule[-10.0] | calibrated | error | at 3.5393 V, -10 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference DMM-at-TP1 | 46.8 mV | – … 55 mV |
test_calibrated_accuracy_over_temperature_with_fw_rule[-10.0] | calibrated over-read at 3.5393 V, -10 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference board-under-5mA | 47.8 mV | – … 48 mV | firmware.md §12.4 fresh unit over −10…60 °C: reading up to 48 mV high / 55 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_calibrated_accuracy_over_temperature_with_fw_rule[-10.0] | calibrated | error | at 3.5393 V, -10 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference board-under-5mA | 47.8 mV | – … 55 mV |
test_calibrated_accuracy_over_temperature_with_fw_rule[60.0] | calibrated over-read at 3.5393 V, 60 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference DMM-at-TP1 | 46.6 mV | – … 48 mV | firmware.md §12.4 fresh unit over −10…60 °C: reading up to 48 mV high / 55 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_calibrated_accuracy_over_temperature_with_fw_rule[60.0] | calibrated | error | at 3.5393 V, 60 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference DMM-at-TP1 | 54 mV | – … 55 mV |
test_calibrated_accuracy_over_temperature_with_fw_rule[60.0] | calibrated over-read at 3.5393 V, 60 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference board-under-5mA | 47.8 mV | – … 48 mV | firmware.md §12.4 fresh unit over −10…60 °C: reading up to 48 mV high / 55 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_calibrated_accuracy_over_temperature_with_fw_rule[60.0] | calibrated | error | at 3.5393 V, 60 °C (TCR, CEG, VOS, C5 IR), fresh unit, calibration reference board-under-5mA | 52.9 mV | – … 55 mV |
test_ship_threshold_above_vbatpor_with_fw_rule[-10.0] | true VBAT at a 3.5393 V reading, -10 °C, calibration reference DMM-at-TP1 | 3.49 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_ship_threshold_above_vbatpor_with_fw_rule[-10.0] | true VBAT at a 3.5393 V reading, -10 °C, calibration reference board-under-5mA | 3.49 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_ship_threshold_above_vbatpor_with_fw_rule[60.0] | true VBAT at a 3.5393 V reading, 60 °C, calibration reference DMM-at-TP1 | 3.49 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_ship_threshold_above_vbatpor_with_fw_rule[60.0] | true VBAT at a 3.5393 V reading, 60 °C, calibration reference board-under-5mA | 3.49 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA | ✅ |
test_calibrated_accuracy_after_aging | calibrated | error | at 3.48 V, 25 °C, after R1/R2 ±0.5 % drift and C5 IR 250 MΩ | 35.7 mV | – … 10 mV |
test_ship_threshold_after_aging | true VBAT at a 3.48 V reading, 25 °C, aged R1/R2 and C5 | 3.45 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω) | ❌ |
test_calibrated_accuracy_after_aging_with_fw_rule | calibrated over-read at 3.5393 V, 25 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 28.4 mV | – … 30 mV | firmware.md §12.4 aged unit at 25 °C: reading up to 30 mV high / 36 mV low (VSENSE-4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_after_aging_with_fw_rule | calibrated | error | at 3.5393 V, 25 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 35.9 mV | – … 36 mV |
test_calibrated_accuracy_after_aging_with_fw_rule | calibrated over-read at 3.5393 V, 25 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 29.6 mV | – … 30 mV | firmware.md §12.4 aged unit at 25 °C: reading up to 30 mV high / 36 mV low (VSENSE-4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_after_aging_with_fw_rule | calibrated | error | at 3.5393 V, 25 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 34.7 mV | – … 36 mV |
test_ship_threshold_after_aging_with_fw_rule | true VBAT at a 3.5393 V reading, 25 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 3.51 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_ship_threshold_after_aging_with_fw_rule | true VBAT at a 3.5393 V reading, 25 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 3.51 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[-10.0] | calibrated over-read at 3.5393 V, -10 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 71.2 mV | – … 73 mV | firmware.md §12.4 aged unit at −10 / 60 °C: reading up to 73 mV high / 79 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[-10.0] | calibrated | error | at 3.5393 V, -10 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 78.3 mV | – … 79 mV |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[-10.0] | calibrated over-read at 3.5393 V, -10 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 72.4 mV | – … 73 mV | firmware.md §12.4 aged unit at −10 / 60 °C: reading up to 73 mV high / 79 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[-10.0] | calibrated | error | at 3.5393 V, -10 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 77.1 mV | – … 79 mV |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[60.0] | calibrated over-read at 3.5393 V, 60 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 71.2 mV | – … 73 mV | firmware.md §12.4 aged unit at −10 / 60 °C: reading up to 73 mV high / 79 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[60.0] | calibrated | error | at 3.5393 V, 60 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 78.3 mV | – … 79 mV |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[60.0] | calibrated over-read at 3.5393 V, 60 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 72.4 mV | – … 73 mV | firmware.md §12.4 aged unit at −10 / 60 °C: reading up to 73 mV high / 79 mV low (VSENSE-1/4); firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_calibrated_accuracy_aged_over_temperature_with_fw_rule[60.0] | calibrated | error | at 3.5393 V, 60 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 77.1 mV | – … 79 mV |
test_ship_threshold_aged_over_temperature_with_fw_rule[-10.0] | calibrated | error | at 3.5393 V, -10 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 78.3 mV | – … – |
test_ship_threshold_aged_over_temperature_with_fw_rule[-10.0] | true VBAT at a 3.5393 V reading, -10 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 3.47 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_ship_threshold_aged_over_temperature_with_fw_rule[-10.0] | calibrated | error | at 3.5393 V, -10 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 77.1 mV | – … – |
test_ship_threshold_aged_over_temperature_with_fw_rule[-10.0] | true VBAT at a 3.5393 V reading, -10 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 3.47 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_ship_threshold_aged_over_temperature_with_fw_rule[60.0] | calibrated | error | at 3.5393 V, 60 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 78.3 mV | – … – |
test_ship_threshold_aged_over_temperature_with_fw_rule[60.0] | true VBAT at a 3.5393 V reading, 60 °C, aged R1/R2 and C5, calibration reference DMM-at-TP1 | 3.47 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_ship_threshold_aged_over_temperature_with_fw_rule[60.0] | calibrated | error | at 3.5393 V, 60 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 77.1 mV | – … – |
test_ship_threshold_aged_over_temperature_with_fw_rule[60.0] | true VBAT at a 3.5393 V reading, 60 °C, aged R1/R2 and C5, calibration reference board-under-5mA | 3.47 V | 3.46 V … – | BQ25180 DS SLUSE99C §7.5 VBATPOR max 3.46 V; firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): SHIP when VBAT_est = 0.979 x reading < 3.465 V (a reading below 3.5393 V); calibration reference from a DMM at TP1 or with the board under 5 mA; drift: UNI-ROYAL DS V.3 §11 Humidity (steady state) ±(0.5 %+0.05 Ω); IR: Samsung MLCC catalog 2015 endurance 25 MΩ·µF | ✅ |
test_read_margin_covers_over_read_with_fw_rule[NEW-1-OLED_VCC_EN-3.21] | info: worst calibrated over-read at a true 3.210 V | 67.9 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[NEW-1-OLED_VCC_EN-3.21] | info: worst over-read at a true 3.210 V as a fraction of the reading (R1' covers 0.021) | 20.7 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[NEW-1-OLED_VCC_EN-3.21] | info: threshold VBAT_est 3.210 V as a calibrated reading (VBAT_est / 0.979) | 3.28 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[NEW-1-OLED_VCC_EN-3.21] | info: margin left at VBAT_est 3.210 V (true value − worst VBAT_est at that true value) | 970 µV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[NEW-1-OLED_VCC_EN-3.21] | worst VBAT_est = 0.979 x reading at a true 3.210 V (NEW-1-OLED_VCC_EN-3.21), 11264 corner values | 3.21 V | – … 3.21 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 / §7.2 / §13.3 (NEW-1, OLED-V1): OLED_VCC_EN at TMR_ILIM 0xC9 only with VBAT_est >= 3.21 V; worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[SHIP-3.465] | info: worst calibrated over-read at a true 3.465 V | 71.4 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[SHIP-3.465] | info: worst over-read at a true 3.465 V as a fraction of the reading (R1' covers 0.021) | 20.2 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[SHIP-3.465] | info: threshold VBAT_est 3.465 V as a calibrated reading (VBAT_est / 0.979) | 3.54 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[SHIP-3.465] | info: margin left at VBAT_est 3.465 V (true value − worst VBAT_est at that true value) | 2.87 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[SHIP-3.465] | worst VBAT_est = 0.979 x reading at a true 3.465 V (SHIP-3.465), 11264 corner values | 3.46 V | – … 3.46 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §12.4: SHIP when VBAT_est < 3.465 V (VBATPOR max 3.46 V); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.48] | info: worst calibrated over-read at a true 3.480 V | 71.6 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.48] | info: worst over-read at a true 3.480 V as a fraction of the reading (R1' covers 0.021) | 20.2 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.48] | info: threshold VBAT_est 3.480 V as a calibrated reading (VBAT_est / 0.979) | 3.55 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.48] | info: margin left at VBAT_est 3.480 V (true value − worst VBAT_est at that true value) | 2.98 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.48] | worst VBAT_est = 0.979 x reading at a true 3.480 V (PI-2-row-3.48), 11264 corner values | 3.48 V | – … 3.48 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT); also the on-USB row (NF-1); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.53] | info: worst calibrated over-read at a true 3.530 V | 72.3 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.53] | info: worst over-read at a true 3.530 V as a fraction of the reading (R1' covers 0.021) | 20.1 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.53] | info: threshold VBAT_est 3.530 V as a calibrated reading (VBAT_est / 0.979) | 3.61 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.53] | info: margin left at VBAT_est 3.530 V (true value − worst VBAT_est at that true value) | 3.35 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.53] | worst VBAT_est = 0.979 x reading at a true 3.530 V (PI-2-row-3.53), 11264 corner values | 3.53 V | – … 3.53 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[MD-2-move-3.54] | info: worst calibrated over-read at a true 3.540 V | 72.4 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[MD-2-move-3.54] | info: worst over-read at a true 3.540 V as a fraction of the reading (R1' covers 0.021) | 20.1 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[MD-2-move-3.54] | info: threshold VBAT_est 3.540 V as a calibrated reading (VBAT_est / 0.979) | 3.62 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[MD-2-move-3.54] | info: margin left at VBAT_est 3.540 V (true value − worst VBAT_est at that true value) | 3.43 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[MD-2-move-3.54] | worst VBAT_est = 0.979 x reading at a true 3.540 V (MD-2-move-3.54), 11264 corner values | 3.54 V | – … 3.54 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §5.8 (MD-2): non-park moves only with VSYS_est (idle) >= 3.54 V; worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.60] | info: worst calibrated over-read at a true 3.600 V | 73.3 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.60] | info: worst over-read at a true 3.600 V as a fraction of the reading (R1' covers 0.021) | 19.9 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.60] | info: threshold VBAT_est 3.600 V as a calibrated reading (VBAT_est / 0.979) | 3.68 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.60] | info: margin left at VBAT_est 3.600 V (true value − worst VBAT_est at that true value) | 3.87 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.60] | worst VBAT_est = 0.979 x reading at a true 3.600 V (PI-2-row-3.60), 11264 corner values | 3.6 V | – … 3.6 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT); also the §6.3 derating 'VBAT < 3.60 V'; worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.65] | info: worst calibrated over-read at a true 3.650 V | 74 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.65] | info: worst over-read at a true 3.650 V as a fraction of the reading (R1' covers 0.021) | 19.9 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.65] | info: threshold VBAT_est 3.650 V as a calibrated reading (VBAT_est / 0.979) | 3.73 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.65] | info: margin left at VBAT_est 3.650 V (true value − worst VBAT_est at that true value) | 4.24 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.65] | worst VBAT_est = 0.979 x reading at a true 3.650 V (PI-2-row-3.65), 11264 corner values | 3.65 V | – … 3.65 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT); also the §6.3 derating re-enable 'VBAT >= 3.65 V'; worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.70] | info: worst calibrated over-read at a true 3.700 V | 74.7 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.70] | info: worst over-read at a true 3.700 V as a fraction of the reading (R1' covers 0.021) | 19.8 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.70] | info: threshold VBAT_est 3.700 V as a calibrated reading (VBAT_est / 0.979) | 3.78 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.70] | info: margin left at VBAT_est 3.700 V (true value − worst VBAT_est at that true value) | 4.62 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.70] | worst VBAT_est = 0.979 x reading at a true 3.700 V (PI-2-row-3.70), 11264 corner values | 3.7 V | – … 3.7 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[OLED-BST-2-3.75] | info: worst calibrated over-read at a true 3.750 V | 75.7 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[OLED-BST-2-3.75] | info: worst over-read at a true 3.750 V as a fraction of the reading (R1' covers 0.021) | 19.8 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[OLED-BST-2-3.75] | info: threshold VBAT_est 3.750 V as a calibrated reading (VBAT_est / 0.979) | 3.83 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[OLED-BST-2-3.75] | info: margin left at VBAT_est 3.750 V (true value − worst VBAT_est at that true value) | 4.68 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[OLED-BST-2-3.75] | worst VBAT_est = 0.979 x reading at a true 3.750 V (OLED-BST-2-3.75), 11264 corner values | 3.75 V | – … 3.75 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §12.4 / §7.4 (OLED-BST-2): OLED C7 <= 08h below VBAT_est 3.75 V (the PI-2 table assumes it); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.80] | info: worst calibrated over-read at a true 3.800 V | 77 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.80] | info: worst over-read at a true 3.800 V as a fraction of the reading (R1' covers 0.021) | 19.9 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.80] | info: threshold VBAT_est 3.800 V as a calibrated reading (VBAT_est / 0.979) | 3.88 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.80] | info: margin left at VBAT_est 3.800 V (true value − worst VBAT_est at that true value) | 4.43 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.80] | worst VBAT_est = 0.979 x reading at a true 3.800 V (PI-2-row-3.80), 11264 corner values | 3.8 V | – … 3.8 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.90] | info: worst calibrated over-read at a true 3.900 V | 79.6 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.90] | info: worst over-read at a true 3.900 V as a fraction of the reading (R1' covers 0.021) | 20 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.90] | info: threshold VBAT_est 3.900 V as a calibrated reading (VBAT_est / 0.979) | 3.98 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.90] | info: margin left at VBAT_est 3.900 V (true value − worst VBAT_est at that true value) | 3.94 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-2-row-3.90] | worst VBAT_est = 0.979 x reading at a true 3.900 V (PI-2-row-3.90), 11264 corner values | 3.9 V | – … 3.9 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.3 (PI-2) instantaneous lit-channel table row, looked up with VBAT_est (row <= true VBAT) (>= 3.90 V: full ring); worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-3-B-variant-3.92] | info: worst calibrated over-read at a true 3.920 V | 80.2 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-3-B-variant-3.92] | info: worst over-read at a true 3.920 V as a fraction of the reading (R1' covers 0.021) | 20 m | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-3-B-variant-3.92] | info: threshold VBAT_est 3.920 V as a calibrated reading (VBAT_est / 0.979) | 4 V | – … – | info: firmware.md §12.4 (R1') | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-3-B-variant-3.92] | info: margin left at VBAT_est 3.920 V (true value − worst VBAT_est at that true value) | 3.84 mV | – … – | info: worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_read_margin_covers_over_read_with_fw_rule[PI-3-B-variant-3.92] | worst VBAT_est = 0.979 x reading at a true 3.920 V (PI-3-B-variant-3.92), 11264 corner values | 3.92 V | – … 3.92 V | firmware rule firmware.md §12.4 (VSENSE-1/4/5, R1'): VBAT_est = 0.979 x calibrated reading must not exceed the true value; threshold: firmware.md §6.1 / §6.3 (PI-3): the WS2812B variant's 1.0 A instantaneous cap only from VBAT_est >= 3.92 V; worst corner aged unit, -10 °C, calibration reference board-under-5mA | ✅ |
test_pin_leakage_sensitivity | info: VSYS reading shift per nA of AIN0 leakage | 2.2 mV | – … – | informational: nRF52840 PS v1.1 has no AIN leakage spec | ✅ |
test_pin_leakage_sensitivity | info: AIN0 leakage that alone uses the ±10 mV budget | 4.55 nA | – … – | informational (the pre-VSENSE-1 firmware.md §12.4 ±10 mV, which still holds at 25 °C on a fresh unit); measure at 60 °C on the first boards | ✅ |
test_settling_after_power_up | settling to 0.5 LSB12 after the VSYS step, all corners | 727 ms | – … 1 s | firmware.md §2.2 power_thread 1 s tick (first battery sample) | ✅ |
test_fault_c5_wrong_value_slows_settling | fault C5 = 1 µF: settling time at 4.2 V | 5.5 s | 1 s … – | must violate: firmware.md §2.2 power_thread 1 s tick | ✅ |
test_sleep_current | divider current at VSYS 3.7 V, all corners, −10 ... 60 °C | 1.17 µA | – … 1.2 µA | architecture.md §8.2 sleep budget row 'VSYS_SENSE divider 1.2 µA (3.7 V / 3.2 MΩ)' | ✅ |
test_sleep_current | divider current at VSYS 4.2 V, all corners, −10 ... 60 °C | 1.33 µA | – … 1.35 µA | SPEC.md §3 '~1.3 µA' (2 significant figures: < 1.35 µA) | ✅ |
test_sleep_current | info: average SAADC sampling current at 1 Hz bursts (8 x CSAMPLE) | 40.7 pA | – … – | informational: nRF52840 PS v1.1 CSAMPLE 2.5 pF; R1 2.2M / R2 1M | ✅ |
test_fault_r1_typo_detected_by_sleep_current | fault R1 = 220k: divider current at 3.7 V | 3.03 µA | 1.2 µA … – | must violate: architecture.md §8.2 sleep budget 1.2 µA | ✅ |